Accepting Submissions: December 26, 2019 – March 25, 2020
Submit your manuscripts to the ECS Journal of Solid State Science and Technology Focus Issue on Gallium Oxide Based Materials and Devices II.
About the focus issue
This issue of the ECS Journal of Solid State Science and Technology is the second in a series that aims to cover the growth, characterization, processing and device applications of Ga2O3. GaN and SiC based wide bandgap device technologies have matured and become limited by fundamental material properties. A new class of oxide wide band gap materials are emerging (gallium oxide and aluminum gallium oxide) that offer potentially improved figure of merit over GaN and SiC for power devices. The availability of Ga2O3 single crystals and epitaxial films with large area and excellent quality has led to renewed interest in this ultra-wide bandgap semiconductor for solar-blind photodetectors, sensors, and power electronics. (more…)