Three Atom Thick Transistor

A new study by two ECS published authors, David Muller and Jiwoong Park, has led to an electronic piece that is just three atoms thick.

The researchers have unveiled a process to develop ultra-thin transistors made from TMD, otherwise known as transition metal dichalcogenide. This material is novel in the fact that it possesses properties that make it a perfect fit for solar cells, light detectors, or semiconductors.

Researchers have been examining TMDs for some time now, but have been finding it difficult to get them to work consistently. This new study has discovered the best process yet to manufacture the materials, which could lead to a breakthrough in the future of electronics and possibly bring about an end to Moore’s law.

This from The Verge:

The Nature paper details a new way of producing TMD, more successful and stable than any previous method. The researchers turned to a proven industrial technique known as metal organic chemical vapor deposition (or MOCVD). The process starts with two commercially available precursor compounds — diethylsulfide and a metal hexacarbonyl compound — mixed on a silicon wafer and baked at 550 degrees Celsius for 26 hours in the presence of hydrogen gas. The result was an array of 200 ultra-thin transistors with good electron mobility and only a few defects. Just two of them failed to conduct, leaving researchers with a 99 percent success rate.

Read the full article here.

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