Deadline for Submitting Abstracts
Dec. 16, 2016
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Topic Close-up #6
Symposium D01: Emerging Materials for Post CMOS Devices/Sensing and Applications 8
Symposium Focus on transition metal dichalcogenide (TMD) (such as MoX2, WX2 etc.), IV/III-V based nanowires and TFET device performance, spintronics for next generation devices and sensing, as well as keeping its previous theme on graphene and CNT based device enhancement for post-CMOS applications. Integration of novel device concepts, transport and mobility enhancement related mechanisms; thermal behavior of graphene, and carbon-based devices including thermal transport, thermal conductivity, and heat transfer management in devices and nanostructures, sensing or backend interconnect applications; advanced materials for charge and non-charge based device application: resistance change materials encompassing logic, memory, or optical applications.
