201st Meeting - Philadelphia, PA

May 12-17, 2002


H1 - Progress Opportunities In Dielectric Science and Technology Over the Last 25 Years: A Retrospective

Dielectric Science and Technology/Electronics

Tuesday, May 14, 2002

Conference Room 402, Level 4

Co-Chairs: D.W. Hess and R.K. Ulrich

1:40365 Progress in Dielectric Science and Technology: Retrospective/Prospective - D. Hess (Georgia Institute of Technology)
2:00366 MOSFET Device Scaling: A (Biased) History of Gate Stacks - C.M. Osburn (North Carolina State University) and H.R. Huff (International SEMATECH)
2:40367 Thermal-Silicon Dioxide- A Unique Dielectric in Semiconductor Technology - B.E. Deal (Stanford University)
3:20 Twenty-Minute Intermission -
3:40368 Solid Electroyte Capacitors - D.M. Smyth (Lehigh University)
4:20369 Deposited Dielectrics and Associated Process Technologies for Device Metallization and Interconnection - G.C. Schwartz (Retired)
5:00370 Electrical Characterization Techniques for Semiconductors and Semiconductor-Dielectric Interfaces - A Review - M.J. Deen (McMaster University)
5:40371 Fabrication and Characterization of Thin Films in BaO-SrO-TiO_2 System Produced by a Photochemical Metalorganic Deposition Process - S. Mukherjee, H. Madsen, P. Roman, L. Svendsen, M. Fury (EKC Technology), S. Barstow, A. Jeyakumar, and C. Henderson (Georgia Institute of Technology)