201st Meeting - Philadelphia, PA
May 12-17, 2002
I1 - Fifth International Symposium On Chemical Mechanical Polishing (CMP)
Dielectric Science and Technology/Electronics/Electrodeposition
Tuesday, May 14, 2002
Conference Room 308, Level 3
CMP Consumables: Pads
Co-Chairs: S. Seal and T. Cale
||Effect of Various Pad Conditioning Parameters on Coefficient of Friction and Removal Rate for ILD CMP Applications - A. Philipossian and L. Charns (University of Arizona)|
||Characterization of "In-Process" Degradation of Polyurethane CMP Pads - Y. Obeng
(PSiloQuest,Inc.), J. Ramsdell, S. Machinsky, H. Lu, K. Richardson, and S. Seal (University of Cental Florida)|
||Effects of Water Interactions with Polishing Pads on Wafer-Scale Chemical Mechanical Planarization Rates - D. Castillo-Mejia, S. Gold, V. Burrows, and S. Beaudoin (Arizona State University)|
||Characterization of Segmented Polyurethane Surface Domains as related to Chemical Mechanical Polishing (CMP) - J. Ramsdell and S. Seal (University of Central Florida)|
||Polish Rate, Pad Surface Morphology and Pad Conditioning in Oxide Chemical Mechanical Polishing -
A.S. Lawing (Rodel, Inc)|
||Removal of Copper Films in Hydroxylamine and Hydrogen Peroxide Solutions Using a Fixed Abrasive Pad - W. Huang, S.
Tamilmani, S. Raghavan, M. Hart, C. Anderson (University of Arizona), and R. Small
(EKC Technology, Inc.)|
CMP of Cu
Co-Chairs: V. Desai and K. Sundaram
||Photo-enhanced Electrochemical Mechanical Polishing for Cu Damascene - H. Yano, Y. Matsui, and G. Minamihaba (Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation)|
||Electrochemistry of Copper in the Chemical Mechanical Planarization (CMP) Slurries Containing Glycine and Hydrogen Peroxide - S. Aksu and
F.M. Doyle (University of California at Berkeley)|
||The Influence of the Selectivity in a 2nd Step Slurry for a Cu CMP Process - B.
Sijmus, I. Vos, V. Terzieva, M. Meuris, and J.L. Hernandez (Imec)|
||Kinetics of the Formation of Cu(I)BTA Films - A.
Al-Hinai and K. Osseo-Asare (The Pennsylvania State University)|
||Characterization and Control of Copper/Barrier Chemical Mechanical Polishing In Damascene Processing Using Non-contact Capacitive Measurements - R. Carpio (International
Sematech), T. Tran (ADE Corporation), G. Martin (Motorola), and R. Estrada (International
CMP of Barriers
Co-Chairs: Y. Obeng and R. Opila
||Electrochemical Interactions in Metal Planarization Technologies - D.
Tamboli, S. Chang, I. Butcher, M. Evans, Q. Arefeen, and S. Hymes (Ashland Specialty Chemicals)|
||Electropolishing of Titanium - B.
Chou, R. Jain, D. McGervey, U. Landau, and G. Welsch (Case Western Reserve University)|
||Role of Hydrogen Peroxide and Glycine on Ta-CMP - S.
Kuiry, S. Seal, E. Megen, and V. Desai (University of Central Florida)|
||Electrochemical Studies on the Selectivity of Tantalum Barrier Layer in Copper CMP - V. Desai (University of Central Florida), D. Tamboli (Ashland Specialty Chemical Company), V.
Chathapuram, K. Sundaram, and A. Sathyapalan (University of Central Florida)|
||Electrochemical Studies on Ti/TiN Barrier Layer CMP - V.
Chathapuram, K. Sundaram, A. Sathyapalan (University of Central Florida), D. Tamboli (Ashland Specialty Chemical Company), and V. Desai (University of Central Florida)|
Wednesday, May 15, 2002
Co-Chairs: K. Osseo-Asare and A.S. Lawling
||Mean Residence Time Analysis of CMP Processes - A. Philipossian and E. Mitchell (University of Arizona)|
||Ellipsometry Characterization of Copper Complex for Abrasive-free CMP Process - T.
Saitoh, H. Nishizawa (Tokyo A&T University), J. Amanokura, and M. Hanazono (Hitachi Chemical Co.)|
||Determining the Effect of Wafer Geometry and Thermal History on Pressure Distributions on Wafer Surface during CMP - A. Philipossian (University of Arizona), M. Goldstein (Intel Corporation), S. Beaudoin (Arizona State University), and J. Sorooshian (University of Arizona)|
||Nanotopography Effect of Improved Single-Side-Polished Wafer on Oxide CMP - T.
Katoh, J.-G. Park, J.-H. Park, and U.-G. Paik (Hanyang University)|
||Spectral Analysis Method for Nanotopography Impact on Pad and Removal Depth Dependency in Oxide CMP - J.-G. Park, T.
Katoh, H.-C. Yoo (Hanyang University), and U.-G. Paik (Intelligent Powder Processing)|
||Multiscale Mechanical Modeling of CMP - J. Seok (Rensselaer Polytechnic Institute), C. Sukam (Rensselaer Polttechnic Institute), J. Tichy (Rensselaer Polytechnic Institute), and T. Cale (Rensselaer Polttechnic Institute)|
CMP Consumables: Slurries
Co-Chairs: A. Philipossian and I. Suni