201st Meeting - Philadelphia, PA
May 12-17, 2002
PROGRAM INFORMATION
I1 - Fifth International Symposium On Chemical Mechanical Polishing (CMP)
Dielectric Science and Technology/Electronics/Electrodeposition
Tuesday, May 14, 2002
Conference Room 308, Level 3
CMP Consumables: Pads
Co-Chairs: S. Seal and T. Cale
Time | Abs# | Title |
8:00 | 372 |
Effect of Various Pad Conditioning Parameters on Coefficient of Friction and Removal Rate for ILD CMP Applications - A. Philipossian and L. Charns (University of Arizona) |
8:20 | 373 |
Characterization of "In-Process" Degradation of Polyurethane CMP Pads - Y. Obeng
(PSiloQuest,Inc.), J. Ramsdell, S. Machinsky, H. Lu, K. Richardson, and S. Seal (University of Cental Florida) |
8:50 | 374 |
Effects of Water Interactions with Polishing Pads on Wafer-Scale Chemical Mechanical Planarization Rates - D. Castillo-Mejia, S. Gold, V. Burrows, and S. Beaudoin (Arizona State University) |
9:10 | 375 |
Characterization of Segmented Polyurethane Surface Domains as related to Chemical Mechanical Polishing (CMP) - J. Ramsdell and S. Seal (University of Central Florida) |
9:30 | 376 |
Polish Rate, Pad Surface Morphology and Pad Conditioning in Oxide Chemical Mechanical Polishing -
A.S. Lawing (Rodel, Inc) |
10:00 | 377 |
Removal of Copper Films in Hydroxylamine and Hydrogen Peroxide Solutions Using a Fixed Abrasive Pad - W. Huang, S.
Tamilmani, S. Raghavan, M. Hart, C. Anderson (University of Arizona), and R. Small
(EKC Technology, Inc.) |
CMP of Cu
Co-Chairs: V. Desai and K. Sundaram
Time | Abs# | Title |
1:40 | 378 |
Photo-enhanced Electrochemical Mechanical Polishing for Cu Damascene - H. Yano, Y. Matsui, and G. Minamihaba (Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation) |
2:00 | 379 |
Electrochemistry of Copper in the Chemical Mechanical Planarization (CMP) Slurries Containing Glycine and Hydrogen Peroxide - S. Aksu and
F.M. Doyle (University of California at Berkeley) |
2:20 | 380 |
The Influence of the Selectivity in a 2nd Step Slurry for a Cu CMP Process - B.
Sijmus, I. Vos, V. Terzieva, M. Meuris, and J.L. Hernandez (Imec) |
2:40 | 381 |
Kinetics of the Formation of Cu(I)BTA Films - A.
Al-Hinai and K. Osseo-Asare (The Pennsylvania State University) |
3:00 | 382 |
Characterization and Control of Copper/Barrier Chemical Mechanical Polishing In Damascene Processing Using Non-contact Capacitive Measurements - R. Carpio (International
Sematech), T. Tran (ADE Corporation), G. Martin (Motorola), and R. Estrada (International
Sematech) |
CMP of Barriers
Co-Chairs: Y. Obeng and R. Opila
Time | Abs# | Title |
3:20 | 383 |
Electrochemical Interactions in Metal Planarization Technologies - D.
Tamboli, S. Chang, I. Butcher, M. Evans, Q. Arefeen, and S. Hymes (Ashland Specialty Chemicals) |
3:50 | 384 |
Electropolishing of Titanium - B.
Chou, R. Jain, D. McGervey, U. Landau, and G. Welsch (Case Western Reserve University) |
4:10 | 385 |
Role of Hydrogen Peroxide and Glycine on Ta-CMP - S.
Kuiry, S. Seal, E. Megen, and V. Desai (University of Central Florida) |
4:30 | 386 |
Electrochemical Studies on the Selectivity of Tantalum Barrier Layer in Copper CMP - V. Desai (University of Central Florida), D. Tamboli (Ashland Specialty Chemical Company), V.
Chathapuram, K. Sundaram, and A. Sathyapalan (University of Central Florida) |
4:50 | 387 |
Electrochemical Studies on Ti/TiN Barrier Layer CMP - V.
Chathapuram, K. Sundaram, A. Sathyapalan (University of Central Florida), D. Tamboli (Ashland Specialty Chemical Company), and V. Desai (University of Central Florida) |
Wednesday, May 15, 2002
CMP Characterization
Co-Chairs: K. Osseo-Asare and A.S. Lawling
Time | Abs# | Title |
8:00 | 388 |
Mean Residence Time Analysis of CMP Processes - A. Philipossian and E. Mitchell (University of Arizona) |
8:20 | 389 |
Ellipsometry Characterization of Copper Complex for Abrasive-free CMP Process - T.
Saitoh, H. Nishizawa (Tokyo A&T University), J. Amanokura, and M. Hanazono (Hitachi Chemical Co.) |
8:40 | 390 |
Determining the Effect of Wafer Geometry and Thermal History on Pressure Distributions on Wafer Surface during CMP - A. Philipossian (University of Arizona), M. Goldstein (Intel Corporation), S. Beaudoin (Arizona State University), and J. Sorooshian (University of Arizona) |
9:00 | 391 |
Nanotopography Effect of Improved Single-Side-Polished Wafer on Oxide CMP - T.
Katoh, J.-G. Park, J.-H. Park, and U.-G. Paik (Hanyang University) |
9:20 | 392 |
Spectral Analysis Method for Nanotopography Impact on Pad and Removal Depth Dependency in Oxide CMP - J.-G. Park, T.
Katoh, H.-C. Yoo (Hanyang University), and U.-G. Paik (Intelligent Powder Processing) |
9:40 | 393 |
Multiscale Mechanical Modeling of CMP - J. Seok (Rensselaer Polytechnic Institute), C. Sukam (Rensselaer Polttechnic Institute), J. Tichy (Rensselaer Polytechnic Institute), and T. Cale (Rensselaer Polttechnic Institute) |
CMP Consumables: Slurries
Co-Chairs: A. Philipossian and I. Suni
|