201st Meeting - Philadelphia, PA

May 12-17, 2002

PROGRAM INFORMATION

M1 - Electrochemical Processing in ULSI Fabrication and Electrodeposition Of And On Semiconductors

Electrodeposition/Dielectric Science and Technology/Electronics

Monday, May 13, 2002

Conference Room 407, Level 4

Copper Electrodeposition

Co-Chairs: A. West and O. Chyan

TimeAbs#Title
10:00517 The Role of SPS in Damascene Copper Electroplating - P.M. Vereecken, H. Deligianni, K.T. Kwietniak, P.C. Andricacos (IBM), R.A. Binstead, J. Wu, R. Mikkola, and J.M. Calvert (Shipley Company)
10:30518 Analytical Mass Transfer Models for the Pulse Plating of Copper into High Aspect Ratio Sub-Micron Trenches - V. Subramanian and R. White (University of South Carolina)
10:50519 Nano Growth Mechanism of Electrolytic Copper Foils - K. Kondo and K. Shimada (Okayama University)
11:20520 Vibational Signatures of Polyethylene Glycol and Brighteners on Copper - B. Baker, C. Yang, L. Richter, and T. Moffat (National Institute of Standards and Technology)
11:40521 Transient Multiscale Modeling of Electrochemical Deposition - S. Sen, M. Bloomfield, K. Jansen, and T. Cale (Rensselaer Polytechnic Institute)

Co-Chairs: A. West and O. Chyan

TimeAbs#Title
1:30522 Characterization of Electrodeposited Copper Films by Scatterometry - R. Carpio, A. Frank, and C. Witt (International Sematech)
1:50523 Electrodeposition of Silver in Sub-Micron-Sized Features - B. Baker, T. Moffat, D. Josell, and D. Wheeler (National Institute of Standards and Technology)
2:20524 Electrodeposition of Copper onto Dendrimer Modified Silicon Oxide - D. Arrington, P. Evans, G. Zangari, and S. Street (The University of Alabama)
2:40525 Electrochemical Deposition of Copper on TaN - A. Radisic (The Johns Hopkins University), A. West (Columbia University), and P. Searson (The Johns Hopkins University)
3:00526 Direct (Seedless) Cu Deposition on W: Implications for ULSI Processing - J. Kelber, J. Liu, C. Wang, and S. Rudenja (University of North Texas)
3:30 Twenty-Minute Intermission -
3:50527 Study of Copper Electrodeposition and its Inter-diffusion Properties on Ruthenium Metal Surface - O. Chyan, T. Arunagiri, R. Chan, T. Ponnuswamy (University of North Texas), and T. Hurd (Texas Instruments)
4:20528 "Seedless" Electrochemical Deposition of Copper on PVD-W2N Liner Material for ULSI Devices - M. Shaw (Sandia National Laboratories) and D. Duquette (Rensselaer Polytechnic Institute)
4:40529 Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Multi-Level Interconnect - Y.T. Kim, H.S. Sim, S.-I. Kim (Semiconductor Materials and Devices Laboratory), and H. Jeon (Division of Materials Science and Engineering)
5:00530 Nucleation and Growth of Copper Electrodeposits on Barriers - A. West, Y. Cao, P. Taephaisitphongse (Columbia University), A. Radisic, and P. Searson (Johns Hopkins University)

Tuesday, May 14, 2002

Electroless Plating and Semiconductors

Co-Chairs: J. Stickney and J. Kilber

TimeAbs#Title
8:00531 High Selectivity Nitride Spacer Etch with HBr/SF6/N2 Chemistry in High Density Plasma Source - N.-H. Kim, J. Choi, B. Jang (Applied Materials), I. Kim, J. Kim (Dongbu Electronics Co, Ltd.), and E.-W. Lee (Kyungpook National University)
8:20532 Development of High Selectivity of W to Hardmask in W/poly gate - N.-H. Kim, S.I. Yi, and K.-T. Lee (Silicon Etch Division)
8:40533 Electroless Plating of Copper on Metal-Nitride Barrier Films - W. Zenglin, I. Taiichirou, S. Hiroyuki, S. Shoso, and T. Takayuki (Hiroshima University)
9:00534 Selective Electroless Copper Deposition at a High Rate Using Dimethylamine Borane as a Reducing Agent - M. O'Connell, J. Boardman, and J. Rohan (National Microelectronics Research Centre)
9:20535 Thin Film Electroless CoReP for Capping/barrier Layer Applications - N. Petrov (Tel-Aviv University), A. Kolics (Blue 29, Inc.), Y. Shacham-Diamand (Tel-Aviv University), and I. Ivanov (Blue 29, Inc.)
9:40536 Optimization of Electroless Co(W,P) Deposition for Cu Interconnect Application - N. Petrov, N. Li, and A. Kolics (Mattson Technology)
10:00537 Electrolessly Deposited Films in Electronics and ULSI - T. Khoperia, L. Maisuradze, N. Khoperia, V. Chikhradze, S. Isaiashvili, G. Ramishvili, and I. Gegechkori (Georgian Academy of Sciences)
10:20538 Electrodeposition of Through Chip Copper Plug for Three Dimensional Packaging - K. Kondo, J.-J. Sun, T. Okamura (Okayama University), M. Tomisaka, H. Yonemura, M. Hoshino, and K. Takahashi (Association of Super-Advanced Electronic Technologies)
10:40 Thirty-Minute Intermission -

Electroless Plating and Semiconductors

Co-Chairs: J. Stickney and J. Kilber

TimeAbs#Title
1:30539 Plating of Bi(sb) Te Alloys for Thermoelectric Applications - E.I. Cooper, U. Ghoshal, P.C. Andricacos, F. Cardone, B. Doris, and E. Robinson (IBM Research)
1:50540 The Effect of Solution pH on the Magnetic Anisotropy of Thin Ni and Co Films Grown on N-GaAs - P. Evans, C. Scheck, R. Schad, and G. Zangari (University of Alabama)
2:20541 Electrodeposition of Germanium Nanoclusters from an Ionic Liquid: An In Situ STM/STS Study - F. Endres (University of Karlsruhe)
2:50542 Characterization of Thin Telluride Films Grown By Electrochemical Atomic Layer Epitaxy Using EQCM and XRD - I. Nicic, V. Cammarata, T. Albrecht-Schmitt, and C. Shannon (Auburn University)
3:20543 Electrodeposition of CdTe in Aqueous Medium and Aluminum Metal in a Nonaqueous Medium - S. Khan and B. Ashead (Duquesne University)
3:40544 Electrical Properties of CdTe Layer Electrodeposited from Ammoniacal Basic Aqueous Electrolytes - M. Miyake, K. Murase, T. Hirato, and Y. Awakura (Kyoto University)
4:10545 Deposition of CdSe using an Automated Flow Deposition System. - M.K. Mathe, B.H. Flowers Jr., R. Vaidyanathan, N. Srisook, J. Stickney, and U. Happek (University of Georgia)
4:30546 Long-range Effects in The First Stages of Metal Electrodeposition - B. Alvarez, A. Rodes, and J. Feliu (Universidad de Alicante)
5:00547 Modulated Electrodeposition of Bismuth Based Oxide Superconductors - M. Norton (Marshall University), H.Y. Tang (National Chi Nan University), C. Huffman (Rice University), and B. Schmitz (Marshall University)
5:30548 Bipolar Electrodeposition at the Sub-Micrometer Scale - J.-C. Bradley, S. Babu, and P. Ndungu (Drexel University)
6:00549 Selective Electroless Vapor Depostion of Conductive, Catalytically Active, Hydrous Ruthenium Oxide Thin Films - K. Swider-Lyons, C. Love, and D. Rolison (Naval Research Laboratory)

Franklin Hall, Level 4

Copper Electrodeposition

Co-Chairs: J. Stickney and M. Norton

TimeAbs#Title
o550 Computer Simulation of WSix CVD VLSI Processing to Obtain Uniform Film Properties - K. Sugawara, T. Muranushi (Nihon University), Y. Chae, Y. Shimogaki, H. Komiyama (University of Tokyo), and Y. Egashira (Osaka University)
o551 Electrodeposition of CdTe Thin Layer from Aqueous Media - a Comparison of Ammoniacal Basic and Acidic Sulfate Electrolytes - K. Murase, M. Uematsu, M. Matsui, M. Miyake, T. Hirato, and Y. Awakura (Kyoto University)