203rd Meeting - Paris, France
April 27-May 2, 2003
PROGRAM INFORMATION
J2 - Joint Symposium: (1) State-of-the-art-Program on Compound Semiconductors XXXVIII and (2) Nitride & Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV
Electronics/Sensor
Tuesday, April 29, 2003
Room 353, Level 3, Le Palais des Congres
Session 1 - III-V Optoelectronics
Co-Chairs: D.M. Walker and F. Ren
Session 2 - III-V Devices and Processing
Co-Chairs: D.N. Buckley and R.E. Enstrom
Time | Abs# | Title |
15:10 | 772 |
Observation of Current Gain Collapse in Large-Area HBT with Rectangular Emitter and Etched Base - M.-K. Tsai (National Taiwan University), S.-W. Tan, W.-S. Lour (National Taiwan-Ocean University), and Y.-J. Yang (National Taiwan University) |
15:30 | 773 |
Characteristics of Sulfur- and InGaP-Passivated InGaP/GaAs Heterojunction Bipolar Transistors - S. Tan, M. Chu, W. Chen, and W. Lour (National Taiwan Ocean University) |
15:50 | 774 |
Interconnect Copper Metallization of InGaP HBTs Using WNX as the Diffusion Barrier - C. Shang-Wen, C. Edward Yi, and L. Cheng-Shin (National Chiao Tung University) |
16:10 | 775 |
Solvent-Affected Chemistry at GaAs/Sulfide Solution Interface - M.V. Lebedev, T. Mayer, and W. Jaegermann (Technische Universitat Darmstadt) |
Session 3 - InP Electrochemistry
Co-Chairs: P.C. Chang and K. Shiojima
Time | Abs# | Title |
16:30 | 776 |
Anodic Behavior of InP: Film Growth, Porous Layer Formation and Current Oscillations - D.N. Buckley, C. O'Dwyer, E. Harvey, T. Melly, M. Serantoni, D. Sutton, and S.B. Newcomb (University of Limerick) |
17:00 | 777 |
Mechanism of Anodic Formation of Porous InP - C. O'Dwyer, D.N. Buckley, D. Sutton, and S.B. Newcomb (University of Limerick) |
17:20 | 778 |
Growth of Anodic Oxides on InP Studied by Electrochemistry and Surface Analysis Correlation Between Oxidation Method, Oxide Texture and Passivating Properties - N. Simon, N.C. Quach, and A. Etcheberry (Universite de Versailles) |
17:40 | 779 |
Localized Photoetching of N-InP at Open-Circuit Potential - C. Debiemme-Chouvy, A. Quennoy, and I. Gerard (Universitate de Versailles-Batiment Lavoisier) |
Hall Maillot, Level 2, Le Palais des Congres
Technical Exhibit and Tuesday Evening Poster Session
Co-Chairs: F. Ren and E.B. Stokes
Time | Abs# | Title |
o | 780 |
Electrical Characterization of Dry Etch-Induced Damages of 4H-SiC Reactively Ion-Etched in SF_6/O2 Plasma - B.S. Kim, M.Y. Um, H.J. Na, H.K. Song, I.S. Jeon, D.I. Eom, and H.J. Kim (Seoul National University) |
o | 781 |
Defect Level Passivation in 4H-SiC Using Hydrogen Plasma Treatment - M.Y. Um, B.S. Kim, H.J. Na, H.K. Song, I.S. Jeon, D.I. Eom, and H.J. Kim (Seoul National University) |
o | 782 |
HRTEM Study of Sic Buried Layer Formed by C+ Implantation in Silicon - Y. Xing, Y. Yu, and Z. Lin (Chinese Academy of Sciences) |
o | 783 |
Growth and Properties of GaN on Si Substrates by Rapid Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition - R. Jiang, P. Chen, Z. Zhao, S. Zhou, B. Shen, R. Zhang, and Y. Zheng (Nanjing University) |
o | 784 |
(Photo-)electrochemistry at n-GaN Grown on Sapphire and on Si : A Comparitive Study - I.M. Huygens and K. Strubbe (Universiteit Gent) |
o | 785 |
InP/InGaAlAs Distributed Bragg Reflectors Grown by Low Pressure Metal Organic Vapor Deposition - T. Juen-Yen, L. Tim-Chung, and W. Shing-Chung (National Chiao Tung University) |
o | 786 |
Very Low Temperature Growth of C-axis Oriented ZnO Thin films on Si Substrates - H.W. Kim, C. Lee, and K.-S. Kim (Inha University) |
o | 787 |
Fabrication and NO_2 Surface Photo Voltage Sensor Properties of Nanoporous Tin-Silica Film - B. Yuliarto, H. Zhou, T. Yamada, I. Honma (National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8568 JAPAN), and K. Asai (The University of Tokyo) |
Wednesday, April 30, 2003
Room 353, Level 3, Le Palais des Congres
Session 4 - Emerging Materials
Co-Chairs: E.B. Stokes and R.E. Sah
Time | Abs# | Title |
8:00 | 788 |
Man-made Quantum Structures: From Superlattices to Quantum Dots - R. Tsu (University of North Carolina at Charlotte) |
8:30 | 789 |
Effects of Composition and Layer Thickness on the Magnetic and Structural Characteristics of GaMnN - G. Thaler, M. Overberg, R. Frazier, C. Abernathy, S. Pearton, F. Ren (University of Florida), D. Park (Seoul National University), R. Rairigh, J. Kelly (University of Florida), J.S. Lee (Seoul National University), N. Theodoropoulou, and A. Hebard (University of Florida) |
9:00 | 790 |
Diamond - The Next Generation Material for High Power Electronics? - A. Aleksov (University of Ulm) |
9:20 | 791 |
Surface Morphology of Si1-xGex Relaxed Alloys (x = 0.2 to 0.5) - A. Abbadie and J.-M. Hartmann (CEA/LETI) |
9:40 | |
Twenty-Minute Intermission |
Session 5 - III-Nitride Light Emmitting Diodes
Co-Chairs: R.C. Fitch and P.H. Shen
Time | Abs# | Title |
10:00 | 792 |
Solid State Lighting Research at Sandia National Laboratories - J.A. Simmons (Sandia National Labs) |
10:30 | 793 |
Deep Ultraviolet Light Emitting Diodes Using AlGaN Quantum Well Active Region - A. Khan, M. Shatalov, V. Adivarahab, J.P. Zhang, A. Chitnis, G. Simin, and J. Yang (University of South Carolina) |
11:00 | 794 |
Dramatically Improved Current Spreading in UV LEDs via Si Delta-Doping in the N-AlGaN Cladding Layer - S.F. LeBouef, X.A. Cao, and L.B. Rowland (GE Global Research Center) |
11:20 | 795 |
Carrier Capture and Recombination in InGaN/GaN Light-Emitting Diodes - X.A. Cao, S.F. LeBoeuf, L.B. Rowland, J.L. Garrett, S.D. Arthur, and D.W. Merfeld (GE Research Center) |
Session 6 - Wide Bandgap Materials and Electronic Devices
Co-Chairs: R.E. Enstrom and D.M. Walker
Time | Abs# | Title |
13:30 | 796 |
Instabilities in GaN based FET Devices - Nature and Alternative Structures - E. Kohn (University of Ulm) |
14:00 | 797 |
AlGaN Power Rectifiers - S.J. Pearton, J. Kim, F. Ren, K. Baik, B.P. Gila, C.R. Abernathy (University of Florida), Y. Irokawa (Toyota Central R and D Laboratories), J.-I. Chyi (National Central University), S.S. Park, and Y.J. Park (Samsung Advanced Institute of Technology) |
14:30 | 798 |
Physics of Electron Injection-Induced Effects in III-Nitrides - L. Chernyak and W. Burdett (University of Central Florida) |
15:00 | 799 |
Activation of Al Implants in SiC - K.A. Jones, P.B. Shah, M.H. Ervin, M.A. Derenge (Army Research Lab), J.A. Freitas (Naval Research Lab), R.D. Vispute, and V. Kulkarni (University of Maryland) |
15:30 | 800 |
DC Characteristics of AlGaN/GaN Hterostructure Field Transistors on Free-Standing GaN Substrates - Y. Irokawa (Toyota), B. Luo, F. Ren (University of Florida), J.I. Chyi (National Central University), S.S. Park, Y.J. Park (Samsung Advanced Institute of Technology), and S.J. Pearton (University of Florida) |
15:50 | 801 |
Growth and Characterization of Hexagonal A1N(100) and GaN(100) on Si(111) Using Surface-Reconstruction Induced Epitaxy - K. Sundaresan, M. Jenkins, A. Faik, M.A. Hasan (University of North Carolina), and M.R. Sardela Jr. (University of Illinois) |
16:10 | 802 |
Innovative Substrate Solutions for GaN Applications: The Smart-CutŪ Approach - B. Faure, C. Richtarch, S. Kerdiles, S. Bressot, Y.-M. Le Vaillant (Soitec S.A.), B. Biasse, E. Jalaguier (Commissariat a l'Energie Atomique), and F. Letertre (Soitec S.A.) |
Session 7 - Optical Properties of III-Nitride Materials
Co-Chairs: R.E. Sah and P.C. Chang
Time | Abs# | Title |
16:30 | 803 |
Microcathodoluminescence Characterization of III-V Nitride Heterojunctions and Devices - L. Brillson (The Ohio State University) |
17:00 | 804 |
New Spectroscopic Data of Erbium Ions in GaN Thin Films - F. Pelle, F. Auzel (CNRS), J. Zavada (US Army Research Office), and A. Steckl (University of Cincinnati) |
17:20 | 805 |
Spectroscopic Ellipsometry Applied to Characterization of GaN and AlGaN Structures - P. Boher, S. Bourtault, and J.P. Piel (SOPRA) |
17:40 | 806 |
Infrared Photocurrent Spectroscopy of Epitaxial III-Nitride Materials on Sapphire - E.B. Stokes (University of North Carolina at Charlotte) and S.F. LeBouef (General Electric Research Lab) |
18:00 | 807 |
Effects of Eu Implamantation on Red Light Emission of Group III- Nitrides - S.-I. Kim, Y.T. Kim (Korea Institute of Science and Technology), A. Wakahara, and A. Yoshida (Toyohashi Univ. of Tech.) |
18:20 | 808 |
Morphology and Optical Properties of Porous GaN Generated Via Metal-Assisted Electroless Etching - D. Diaz, T. Williamson, and P. Bohn (University of Illinois at Urbana-Champaign) |
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