204th Meeting of The Electrochemical Society, Co-sponsored in Part by the Electronics Division of The American Ceramic Society

October 12-October 16, 2003

PROGRAM INFORMATION

L2 - Seventh International Symposium on Low Temperature Electronics

Electronics/Dielectric Science and Technology/Electronics Division of The American Ceramic Society

Tuesday, October 14, 2003

Council Room, Lobby Level

Device Physics and Components

Co-Chairs: J. Deen and A.S. Bhalla

TimeAbs#Title
9:00876 DIBL Evaluation for 0.13 um Floating-Body Partially Depleted SOI MOSFET in Low Temperature Operation - J.A. Martino (Centro Universitario da FEI) and M.A. Pavanello (Universidade de Sao Paulo - Escola Politecnica)
9:30877 Emerging Double-Gate MOS Devices Technology - E. Suzuki, Y. Liu, M. Masahara, and K. Ishii (National Institute of Advanced Industrial Science and Technology (AIST))
10:00878 New Insights on the Cryogenic Self-Heating of Silicon MOSFETs: Thermal Resistance of the Ceramic Package - F.J. De la Hidalga-W, F.J. Cortes-P (Instituto Nacional de Astrofisica, Optica y Electronica), and M.J. Deen (McMaster University)
10:30 Twenty-Minute Intermission
10:50879 High-Speed Conversion of Picosecond-Millivolt Pulse Signals to CMOS Voltage Levels - T. Van Duzer, S.R. Whiteley, X. Meng, Q. Liu (University of California), and N. Yoshikawa (Yokohama National University)
11:20880 Operation of Double Gate Graded-Channel Transistors at Low Temperatures - M.A. Pavanello (Universidade de Sao Paulo), J.A. Martino (Centro Universitario de FEI), T.M. Chung, A. Kranti, J.-P. Raskin, and D. Flandre (Universite Catholique de Louvain)
11:40881 Low Temperature Electrical Properties of a Boron-Doped Amorphous Silicon Bolometer - A. Heredia-J (Instituto Nacional de Astrofisica, Optica y Electronica), F.J. De la Hidalga-W, A. Torres-J (Instituto Nacional de Astrofisica, Optica y Electronica, INAOE), and A. Jaramillo-N (Instituto Nacional de Astrofisica, Optica y Electronica)

Cryogenic Electronics for Space Applications

Co-Chairs: R.L. Patterson and C. Claeys

TimeAbs#Title
2:00882 Electronics for Low Temperature Applications in Space and on Earth - R. Patterson (NASA Glenn Research Center), A. Hammoud (QSS Group), S. Gerber (ZIN Technologies), M. Elbuluk (University of Akron), E. Overton, and J. Dickman (NASA Glenn Research Center)
2:30883 A Comprehensive Evaluation of Commercial Off The Shelf (COTS) Power Electronic Devices, Components, and Converters at Cryogenic Temperatures for Deep Space Applications - M.E. Elbuluk (University of Akron), S.S. Gerber (ZIN Technologies, Inc.), A. Hammoud (QSS Group, Inc.), and R.L. Patterson (NASA Glenn Research Center)
2:50884 Performance of High-Voltage IGBTs at Cryogenic Temperatures - O. Mueller, E.K. Mueller, and M.J. Hennessy (MTECH Labs)
3:10885 Ge Semiconductor Devices for Cryogenic Power Electronics- IV - R.R. Ward, W.J. Dawson, L. Zhu, R.K. Kirschman (GPD Optoelectronics Corp.), M.J. Hennessy, E.K. Mueller (MTECH Labs LLC), R.L. Patterson, J.E. Dickman (NASA Glenn Research Center), and A. Hammoud (QSS Group Inc)
3:30 Twenty-Minute Intermission
3:50886 Analog Power and Digital Circuits at Cryogenic Temperatures For Space - V. Kapoor, A. Menezes, A. Vijh, and R. Patterson (The University of Toledo)
4:10887 SiGe Semiconductor Devices for Cryogenic Power Electronics - R.R. Ward, W.J. Dawson, L. Zhu, R.K. Kirschman (GPD Optoelectronics Corp.), O. Mueller (LTE-Low Temperature Electronics), R.L. Patterson, J.E. Dickman (NASA Glenn Research Center), and A. Hammoud (QSS Group Inc.)
4:30888 Liquid Helium Temperature Irradiation Effects on the Operation of 0.7 Micron CMOS Devices for Cryogenic Space Applications - C. Claeys, A. Mercha, Y. Creten, J. Putzeys, P. De Moor, E. Simoen, C. Van Hoof (IMEC), A. Mohammadzadeh, and R. Nickson (ESTEC)
4:50889 External Electronic Packaging for Extended Mars Surface Missions - A.A. Shapiro, E.A. Kolawa, and M.M. Mojarradi (National Aeronautics ans Space Adminsitration)

Wednesday, October 15, 2003

Emerging Materials and Devices

Co-Chairs: G. Oleszek and J. Deen

TimeAbs#Title
10:00890 Silicon-Based Cryogenic Electronics: From Physical Curiosity to Quantum Computing - C. Claeys and E. Simoen (IMEC)
10:30891 Electrical Performances at Low Temperature of Ultimate Si-Based MOSFETs - J. Jomaah, G. Ghibaudo, S. Cristoloveneau, and F. Balestra (IMEP)
11:00892 Low Temperature Pyroelectric Properties of the Lead Indium Niobate- Lead Nickel Niobate Solid Solution - E.F. Alberta, R. Guo, and A.S. Bhalla (The Pennsylvania State University)
11:20893 Room-Temperature Synthesis of Pure and Co-Doped ZnO - A. Manivannan (West Virginia University)
 

 

 

 

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