201st Meeting - Philadelphia, PA
May 12-17, 2002
N2 - State-Of-The-Art Program on Compound Semiconductors XXXVI
Wednesday, May 15, 2002
Conference Room 407-408, Level 4
Co-Chairs: R.F. Kopf and D.N. Buckley
||Opening Remarks - |
||Fabrication and Characteristics of High Speed Implant-Confined, Index-Guided, Lateral-Current Injected, 850 nm Vertical Cavity Surface Emitting Lasers - F. Ren (University of Florida)|
||Lateral Oxidation Kinetics of AlxGa1-xAs Layer by Capacitance Technique - W. Chang, N. Das, B.
Gollschneider, and P. Newman (Army Resarch Laboratory)|
||High Power InP-based Diode Lasers for Telecom Applications - D. Garbuzov (Princeton Lightwave Inc.)|
||In-Situ Photoluminescence form III-V Semiconductor Electrodes - E. Harvey, C.
Heffernan, E. Morley, D.N. Buckley (University of Limerick), and C. O'Raifeartaigh (Waterford Inst of Technology)|
||OMVPE Growth of Carbon Doped Bases for Advanced HBT Applications - E. Armour, S. Sun, M.
Begarney, and S. Ting (Emcore Electronic Materials)|
||In-situ Etching of InP-based Materials in MOVPE Reactor using PCl3 - A. Ougazzaden
||Detailed Models of III-V MOVPE in Commercial Reactors -
R.A. Talalaev, A.V. Lobanova, Y.A. Shpolyanskiy, I.Y. Evstratov (Soft-Impact Ltd.), and
Y.N. Makarov (STR Inc.)|
||Photoelectrochemical Characteristics of Nanocrystalline CdSe Films -
K.R. Murali, D.C. Trivedi, and V. Swaminathan (Central Electrochemical Research Institute)|
||Influence of Substrate Temperature on the Strucutural and Photoconductive Properties of Vacuum Evaporated CdSe Thin Films -
K.R. Murali (Central Electrochemical Research Institute) and K. Srinivasan (Thanthai Periyar Institute of Technology)|
Thursday, May 16, 2002
Co-Chairs: P.C. Chang and S.N.G. Chu
||The Intercation Among Defects During High Temperature Annealing of High Purity SIC - D. Alvarez, V.
Konovalov, and M.E. Zvanut (University of Alabama at Birmingham)|
||Crystalline Oxides on Si: Compliant Substrates for III-V's Compund Semiconductors - J.
Ramdani, A. Demkov, L. Hilt, D. Jordan, J. Curless, Z. Yu, R. Droopad, A.
Talin, J.L. Edwards, Jr., and W.J. Ooms (Motorola Inc.)|
||FIB Systems As TEM Specimen Preparation Tools for III-V Compound Semiconductor Materials -
K.N. Hooghan, S. Nakahara, R. Privette, and S.-N.(G. Chu (Agere Systems)|
||Characterization of Compound Semiconductors by Combined Spectroscopic Ellipsometry and Grazing X-ray Reflectance - P.
Boher, C. Defranoux, J.P. Piel, and J.L. Stehle (SOPRA)|
||Thirty-Minute Intermission - |
||Anodization of Indium Phosphide in Sulfide Electrolytes: Film Formation and Oscillatory Behavior -
D.N. Buckley, E. Harvey (University of Limerick), and S.N.G. Chu (Agere Systems)|
||Nitrogen-Induced Decrease of the Electron Effective Mass in GaAs1-xNx Thin Films Measured by Thermomagnetic Transport Phenomena -
D.L. Young, J.F. Geisz, and T.J. Coutts (National Renewable Energy Laboratory)|
||Use of Ti/W/Cu, Ti/Co/Cu and Ti/Mo/Cu Multi-Layer Metals as Schottky Metals for GaAs Schottky Diodes -
C.S. Lee, E.Y. Chang, and J.J. He (National Chiao Tung University)|
||Properties of Spray Pyrolysed CdSexTe1-x Films -
K.R. Murali (Central Electrochemical Research Institute) and T. Elango (Chettinad Polytechnic)|
||Characteristics of Swab Plated CdSxSe1-x Films -
K.R. Murali (Central Electrochemical Research Institute)|