201st Meeting - Philadelphia, PA
May 12-17, 2002
PROGRAM INFORMATION
N2 - State-Of-The-Art Program on Compound Semiconductors XXXVI
Electronics
Wednesday, May 15, 2002
Conference Room 407-408, Level 4
Co-Chairs: R.F. Kopf and D.N. Buckley
| Time | Abs# | Title |
|---|
| 1:40 | |
Opening Remarks - |
| 1:45 | 632 |
Fabrication and Characteristics of High Speed Implant-Confined, Index-Guided, Lateral-Current Injected, 850 nm Vertical Cavity Surface Emitting Lasers - F. Ren (University of Florida) |
| 2:15 | 633 |
Lateral Oxidation Kinetics of AlxGa1-xAs Layer by Capacitance Technique - W. Chang, N. Das, B.
Gollschneider, and P. Newman (Army Resarch Laboratory) |
| 2:45 | 634 |
High Power InP-based Diode Lasers for Telecom Applications - D. Garbuzov (Princeton Lightwave Inc.) |
| 3:15 | 635 |
In-Situ Photoluminescence form III-V Semiconductor Electrodes - E. Harvey, C.
Heffernan, E. Morley, D.N. Buckley (University of Limerick), and C. O'Raifeartaigh (Waterford Inst of Technology) |
| 3:35 | 636 |
OMVPE Growth of Carbon Doped Bases for Advanced HBT Applications - E. Armour, S. Sun, M.
Begarney, and S. Ting (Emcore Electronic Materials) |
| 4:05 | 637 |
In-situ Etching of InP-based Materials in MOVPE Reactor using PCl3 - A. Ougazzaden
(Agere Systems) |
| 4:35 | 638 |
Detailed Models of III-V MOVPE in Commercial Reactors -
R.A. Talalaev, A.V. Lobanova, Y.A. Shpolyanskiy, I.Y. Evstratov (Soft-Impact Ltd.), and
Y.N. Makarov (STR Inc.) |
| 4:55 | 639 |
Photoelectrochemical Characteristics of Nanocrystalline CdSe Films -
K.R. Murali, D.C. Trivedi, and V. Swaminathan (Central Electrochemical Research Institute) |
| 5:15 | 640 |
Influence of Substrate Temperature on the Strucutural and Photoconductive Properties of Vacuum Evaporated CdSe Thin Films -
K.R. Murali (Central Electrochemical Research Institute) and K. Srinivasan (Thanthai Periyar Institute of Technology) |
Thursday, May 16, 2002
Co-Chairs: P.C. Chang and S.N.G. Chu
| Time | Abs# | Title |
|---|
| 8:00 | 641 |
The Intercation Among Defects During High Temperature Annealing of High Purity SIC - D. Alvarez, V.
Konovalov, and M.E. Zvanut (University of Alabama at Birmingham) |
| 8:20 | 642 |
Crystalline Oxides on Si: Compliant Substrates for III-V's Compund Semiconductors - J.
Ramdani, A. Demkov, L. Hilt, D. Jordan, J. Curless, Z. Yu, R. Droopad, A.
Talin, J.L. Edwards, Jr., and W.J. Ooms (Motorola Inc.) |
| 8:50 | 643 |
FIB Systems As TEM Specimen Preparation Tools for III-V Compound Semiconductor Materials -
K.N. Hooghan, S. Nakahara, R. Privette, and S.-N.(G. Chu (Agere Systems) |
| 9:20 | 644 |
Characterization of Compound Semiconductors by Combined Spectroscopic Ellipsometry and Grazing X-ray Reflectance - P.
Boher, C. Defranoux, J.P. Piel, and J.L. Stehle (SOPRA) |
| 9:40 | |
Thirty-Minute Intermission - |
| 10:10 | 645 |
Anodization of Indium Phosphide in Sulfide Electrolytes: Film Formation and Oscillatory Behavior -
D.N. Buckley, E. Harvey (University of Limerick), and S.N.G. Chu (Agere Systems) |
| 10:40 | 646 |
Nitrogen-Induced Decrease of the Electron Effective Mass in GaAs1-xNx Thin Films Measured by Thermomagnetic Transport Phenomena -
D.L. Young, J.F. Geisz, and T.J. Coutts (National Renewable Energy Laboratory) |
| 11:00 | 647 |
Use of Ti/W/Cu, Ti/Co/Cu and Ti/Mo/Cu Multi-Layer Metals as Schottky Metals for GaAs Schottky Diodes -
C.S. Lee, E.Y. Chang, and J.J. He (National Chiao Tung University) |
| 11:20 | 648 |
Properties of Spray Pyrolysed CdSexTe1-x Films -
K.R. Murali (Central Electrochemical Research Institute) and T. Elango (Chettinad Polytechnic) |
| 11:40 | 649 |
Characteristics of Swab Plated CdSxSe1-x Films -
K.R. Murali (Central Electrochemical Research Institute) |
|