2004 Joint International Meeting

October 3-October 8, 2004


J3 - International Symposium on Nanoscale Devices and Materials

Dielectric Science and Technology/Luminescence and Display Materials/Electronics

Monday, October 4, 2004

Rainbow 2, Lower Level, Rainbow Tower

Quantum Dots and Nanowires

Co-Chairs: D. Lockwood and A. Stella

10:001007 Self-Assembled Quantum Dots for Optoelectronic Devices: Progress and Challenges - M. Henini (University of Nottingham)
10:401008 Excitonic Fock-Darwin Spectra in Quantum Dots - S. Raymond, S. Studenikin, A. Sachrajda, Z. Wasilewski (National Research Council of Canada), S.-J. Cheng (National Chiao Tung University), and W. Sheng (National Research Council of Canada)
11:201009 Electrical and Optical Properties of Colloidal Quantum Dots: Role of Surface States - M. Stroscio and M. Dutta (University of Illinois at Chicago)
12:001010 Optical and Electrical Properties of Ge Nanowire –Si substrate One-dimensional Heterojunctions - L. Tsybeskov, B. Kamenev, V. Sharma, E.K. Lee (New Jersey Institute of Technology), P. Fosh (Mscow State University), T. Kamins, and S. Williams (Hewlett-Packard Laboratories)
12:201011 Electrochemical growth of individually addressable palladium nanowires. - M.A. Bangar, K. Ramanathan (University of California, Riverside), M. Yun (Jet Propulsion Laboratory), W. Chen, A. Mulchandani, and N.V. Myung (University of California, Riverside)

Transport in Nanoscale Devices

Co-Chairs: S. Bandyophadhyay and J. Leburton

14:001012 Electron Transport Properties and Device Applications of Nanocrystalline Silicon Quantum Dots - H. Mizuta (Tokyo Institute of Technology), M. Khalafalla, Z. Durrani (University of Cambridge), S. Uno (Hitachi Cambridge Laboratory), N. Koshida (Tokyo University of Agriculture and Technology), Y. Tsuchiya, and S. Oda (Tokyo Institute of Technology)
14:401013 Characterization of Charged States of Si Quantum Dots Floating Gate in MOS Structures - S. Miyazaki, T. Shibaguchi, and M. Ikeda (Hiroshima University)
15:001014 Carrier and Phonon Transport in Ge/Si Quantum Dot Superlattices - A. Balandin (University of California - Riverside)
15:20 Twenty-Minute Intermission

Transport in Nanoscale Devices (Cont'd)

Co-Chairs: J. Leburton and S. Bandyopadhyay

15:401015 Semiconducting Carbon Nanotubes as Three-terminal Devices - J. Appenzeller (IBM T.J. Watson Research Center)
16:201016 Design and Implementation of Ultra-Small and Ultra-Low-Power Digital Systems Utilizing A Hexagonal BDD Quantum Circuits on GaAs-based Hexagonal Nanowire Network Structures - S. Kasai, M. Yumoto, T. Tamura, I. Tamai, T. Sato, and H. Hasegawa (Hokkaido University)
16:401017 MOSFET Tunneling Spectroscopy at Low Temperature - M. Bao, F. Liu, and K.L. Wang (University of California, Los Angeles)
17:001018 Accurate Three-Dimensional Simulation of Electron Mobility Including Electron-Electron and Electron-Dopant Interactions - C. Heitzinger, C. Ringhofer, S. Ahmed, and D. Vasileska (Arizona State University)

Tuesday, October 5, 2004


Co-Chairs: H. Hasegawa and A. Balandin

08:001019 Spintronic Transport: Coherence and Numerical Modeling - V. Privman (Clarkson University)
08:401020 Full scale simulation of spin-qubit quantum dots and circuits - L. Zhang, J. Kim, D. Melnikov, and J.-P. Leburton (University of Illinois)
09:001021 Ocillatory Magnetoresistance in a Spin Field Effect Transistor - M. Cahay (University of Cincinnati) and S. Bandyopadhyay (Virginia Commonwealth University)
09:201022 Anomalous Magnetic Properties of Strongly Correlated Electrons on a Semiconductor Surface: Experimental Study - S. Kravchenko (Northeastern University)
09:40 Twenty-Minute Intermission

Electrical and Optical Properties of Nanocrystals and Porous Materials

Co-Chairs: N. Koshida and S. Raymond

10:001023 Harmonic Generation in Metallic Nanoscale Systems - A.M. Malvezzi (Dipartimento di Elettronica, Università degli Studi di Pavia)
10:401024 Optical Properties of Nanometer-Thick Single Quantum Wells of Crystalline Silicon - D.J. Lockwood (Institute for Microstructural Sciences) and Z.-H. Lu (Department of Materials Science and Engineering)
11:001025 A Critique of the Existing Models for Excitation Exchange Between Silicon Nanoclusters and Erbium Ions in Silica - A. Kenyon and F. Lucarz (University College London)
11:201026 Effects of Aging on the Broadband Luminescence of Semiconductor Nanocrystals - B. Abrams, J. Wilcoxon, S. Thoma, and A. Sanchez (Sandia National Laboratories)
11:401027 Optimization of Soft Bake Step for the Low-k Application using Novel Porous Ladder-type HSQ - J.-H. Cho, J.-H. Lee, J.-S. Choi, and S.-M. Chon (Samsung Electronics Co., LTD.)

A. Stella

Electrical and Optical Properties of Nanocrystals and Porous Materials (Cont'd)

Co-Chair: N. Koshida

14:001028 Improvement in the Efficiency of Thermally-Induced Ultrasonic Emission from Porous Silicon by Nano-structural Control - K. Tsubaki, T. Komoda (Matsushita Electric Works, Ltd.), and N. Koshida (Tokyo University of Agriculture and Technology)
14:201029 Fabrication of Luminescent Porous Silicon Layers Using Extremely Dilute HF Solutions - H. Koyama and K. Takemura (Hyogo University of Teacher Education)
14:401030 Enhancement of Photoluminescence of Nanocrystalline Porous Silicon by High-Pressure Water Vapor Annealing - B. Gelloz (Tokyo University of Agriculture and Technology), A. Kojima (Quantum14 Co.), and N. Koshida (Tokyo University of Agriculture and Technology)

Rainbow 2, Lower Level, Rainbow Tower

Semiconductor Nanoprocessing and Self-Assembled Structures

Co-Chairs: M. Henini and S. Bandyopadhyay

15:001031 Adsorption of Alkanethiol Self-Assembled Monolayers on Sputtered Gold Substrates for Atomic Nanolithography Applications - C. O'Dwyer (Université Toulouse III)
15:201032 Combinatorial Approach of Redox-Active Ru/Os Complex Units Towards Layered Molecular Devices - M.-A. Haga, M. Sannodo, K. Hanakura, and Y. Hashimoto (Chuo University)
15:401033 Sub-100 nm Feature Definition Optimization using Cold Cs Beam Exposed Self-Assembled Monolayers on Au - C. O'Dwyer (Université Toulouse III)

Rainbow 2, Lower Level, Rainbow Tower

Semiconductor Nanoprocessing and Self-Assembled Structures

Co-Chairs: S. Bandyopadhyay and M. Henini

16:201034 Three-dimensional AlGaAs nano-heterostructures using both VLS and MOVPE growth mode - K. Tateno, H. Gotoh (NTT Basic Research Laboratories, NTT corporation), and Y. Watanabe (NTT Advanced Technology Corporation)
16:401035 Surface Effects on the Chemical and Optical Properties of Semiconductor Nanocrystals - J. Wilcoxon (Sandia National Laboratories), J. Kraus (U.of Washington), and B. Abrams (Sandia National Laboratories)
17:001036 Fabrication of two-dimensional arrays of graded oxide thin films by the LPI Method - S. Iizuka, M. Mizuhata, A. Kajinami, and S. Deki (Kobe University)
17:201037 Encapsulation of Semiconducting Nanoparticles in Amine-Functionalized Ormosils. - S. Thoma, J. Wilcoxon, B. Abrams, and A. Sanchez (Sandia National Laboratories)
17:401038 Nanostructured SnO2-SiO2 glassceramic thin films for photonic applications - N. Chiodini, A. Paleari, G. Spinolo (Università Milano-Bicocca, Dip. Scienza dei Materiali), and M. Romagnoli (Pirelli labs S.p.A.)
18:001039 Selective MBE Growth of High-Density Hexagonal Nanowire Networks on Pre-Patterned GaAs (001) and (111)B Substrates - I. Tamai, T. Sato, T. Hashizume, and H. Hasegawa (Research Center for Integrated Quantum Electronics, Hokkaido University)

Tuesday Evening Poster Session and Technical Exhibit

Co-Chairs: S. Bandyopadhyay and M. Cahay

o1040 Calculation on Cyclopyranose as C-Nanotube Co-solvents - F. Torrens (Universitat de Valencia-Inst. Ciencia Molecular)
o1041 Practical Wafer-Compatible Fabrication of Nanocrystalline Silicon Thermally Induced Ultrasound Emitters - T. Kihara, T. Harada (Yamatake Corporation), and N. Koshida (Tokyo University of Agriculture and Technology)
o1042 Dielectric Spectroscopy on Ga Nanoparticles in Glassy Matrix: Negative Capacitane Effect - G. Parravicini, A. Stella (Università di Pavia), M.C. Ungureanu (Scuola Normale Superiore di Pisa), and R. Kofman (Université de Nice-Sophia Antipolis)
o1043 Nonlinear Optical Response of Nanoparticle Single Layers: Polarization and Structural Effects - S. Achilli, M. Allione (Dipartimento di Fisica “A.Volta”, Università di Pavia), R. Kofman (LPMC, UMR6622, Universitè de Nice-Antipolis), A.M. Malvezzi (Dipartimento di Elettronica, Università di Pavia), M. Patrini, and A. Stella (Dipartimento di Fisica “A.Volta”, Università di Pavia)
o1044 Optical Study of Strain-driven Tuning of the Emission Energy in InAs/InGaAs Quantum-dot Nanostructures - M. Geddo (INFM – Pavia and Dipartimento di Fisica, Università di Parma), G. Guizzetti, V. Bellani, M. Patrini, T. Ciabattoni (INFM-Dipartimento di Fisica “A. Volta”, Università di Pavia), L. Seravalli, P. Frigeri, M. Minelli, and S. Franchi (CNR - IMEM Institute)
o1045 Electrical Device Structures Using Fe_2O3 Nano-Particles Embedded in Polyimide - J.H. Kim, E.K. Kim (Department of Physics, Hanyang University), M.S. Song, and Y.H. Kim (Division of Materials Science & Engineering, Hanyang University)
o1046 DLTS Study on Self-Assembled InAs/GaAs Quantum Dots Grown by MBE - E.K. Kim, J.S. Kim, J.H. Kim (Department of Physics, Hanyang University), S.J. Lee, and S.K. Noh (Korea Research Institute of Science and Standard)
o1047 Deposition of Low Resistivity Copper Interconnection Layers Electroplated on Electroless Plating Copper Seed Layer - T. Hara (Hosei University)