201st Meeting - Philadelphia, PA
May 12-17, 2002
PROGRAM INFORMATION
R1 - Wide Bandgap Semiconductors For Photonic And Electronic Devices And Sensors II
Electronics/Sensor
Monday, May 13, 2002
Conference Rooms 302-303, Level 3
Co-Chairs: E.B. Stokes and W. Chang
| Time | Abs# | Title |
|---|
| 10:00 | |
Introductory Remarks - |
| 10:05 | 753 |
New Physics of Electron Transport in Nitrides - M. Shur (Rensselaer Polytechnic Institute) |
| 10:35 | 754 |
Excitation Mechanisms of Rare Earth Ions Embedded in GaN Thin Films - J. Zavada (US Army Research Office), U. Hommerich (Hampton University), and A. Steckl (University of Cincinnati) |
| 11:05 | 755 |
Electronic and Optoelectronic Devices Using Quarternary A1InGaN Layers - A. Khan (University of South Carolina) |
| 11:35 | 756 |
III-N Based Dilute Magnetic Semiconductors for Spintronics Applications -
Y.D. Park, J.S. Lee, S.-Y. Lee, Z.G. Khim, E. Oh (Seoul National University),
G.T. Thaler, M.E. Overberg, C.R. Abernathy, S.J. Pearton, J.-H. Kim, and F. Ren (University of Florida) |
Co-Chairs: H.M Ng and A.G. Baca
| Time | Abs# | Title |
|---|
| 1:40 | 757 |
Sources of the Parasitic Chemical Reactions during AlGaN OPVE -
J.R. Creighton, W.G. Breiland, and M.E. Coltrin (Sandia National Labs) |
| 2:10 | 758 |
GaN/Gd203/GaN Single Crystal Heterostructure - M. Hong, J.
Kwo, S.N.G. Chu, J.P. Mannaerts (Agere Systems, Inc.), A.R. Kortan, H.M. Ng,
A.Y. Cho, K.A. Anselm (Bell Labs/Lucent Technologies), C.M. Lee, and J.I. Chyi (National Central University) |
| 2:40 | 759 |
Growth of III-Nitrides by MBE - T.
Moustakas, E. Iliopoulos, A. Sampath, A. Bhattacharyya, I. Sandeep, and I. Friel (Boston University) |
| 3:10 | |
Fifteen-Minute Intermission - |
| 3:25 | 760 |
Growth and Characterization of GaMnN Dilute Magnetic Semiconductors - G.
Thaler, M. Overberg, C. Abernathy, S. Pearton, J. Kim, F. Ren (University of Florida),
Y.D. Park, J.S. Lee (Seoul National University), N. Theodoropoulou, and A. Hebard (University of Florida) |
| 3:55 | 761 |
Er-doped GaN Grown By Molecular Beam Epitaxy -
H.M. Ng (Bell Labs, Lucent Technologies) |
| 4:15 | 762 |
Improved Surface Morphology and Optical Properties of InGaN/GaN Multiple Quantum Well Structures Grown by MOCVD Using Different Growth Parameters - D.
Florescu, D. Lee, and J. Ramer (Emcore Corporation) |
| 4:35 | 763 |
AlN Firms Epitaxialy Formed by Direct Nitridation of Sapphire using Aluminum Oxynitride as a Buffer Layer - W.
Nakao, H. Fukuyama, and K. Nagata (Tokyo Institute of Technology) |
| 4:55 | 764 |
High Temperature Effects in Metal-Organic Vapor Phase Epitaxy of GaN and AlGaN -
R.A. Talalaev, E.V. Yakovlev, A.V. Lobanova, Y.A. Shpolyanskiy, I.Y. Evstratov (Soft-Impact Ltd.), and
Y.N. Makarov (STR Inc.) |
| 5:15 | |
Discussion by A. Osinsky - |
Tuesday, May 14, 2002
Co-Chairs: J. Han and J.M. Zavada
| Time | Abs# | Title |
|---|
| 8:20 | 765 |
Semiconductor Ultraviolet Optical Sources for Biological Agent Detection - J.C. Carrano (Defense Advanced Research Projects Agency) and
A.J. Maltenfort (Booz Allen & Hamilton Inc.) |
| 8:50 | 766 |
Commercialization of the SiC Flame Sensor - D. Brown, J. Kretchmer (GE Corporate Research & Development), L. Lombardo, and D. Schneider (GE Reuter-Stokes) |
| 9:20 | 767 |
Development of SiC Gas Sensor Systems - G. Hunter (NASA Glenn Research Center at Lewis Field), V. Thomas (Ohio Aerospace Institute), P. Neudeck (NASA Glenn Research Center at Lewis Field), D. Makel
(Makel Engineering, Inc), C.C. Liu (Case Western Reserve University), L. Chen (Ohio Aerospace Institute), R. Okojie (NASA Glenn Research Center at Lewis Field), and B. Ward (Case Western Reserve University) |
| 9:50 | 768 |
Pyroelectronics and Pyrosensors Based on AlGaN/GaN Heterostructures - O. Ambacher (Technical University Munich) |
| 10:20 | 769 |
ZnO-Based Photoconductive UV Detector - M. Oh (Korea Institute of Science & Technology), J. Cho
(Yonsei University), and W. Choi (Korea Institute of Science & Technology) |
Co-Chairs: R.C. Fitch and H. Shen
| Time | Abs# | Title |
|---|
| 2:10 | 770 |
Activating Ion Implants in 4H-SiC by Annealing with an AlN or BN Cap - K. Jones (Army Research Labs) |
| 2:40 | 771 |
Nonlinear Effects in AlGaN/GaN HFET's Under Large-Signal RF Conditions - R.J. Trew and B. Davis
(Virgina Tech) |
| 3:10 | 772 |
Photo-enhanced Wet Oxidation and Etching of GaN - L.-H.
Peng, H.-M. Wu (National Taiwan University), C.-C. Chuo, and J.-I. Chyi (National Central University) |
| 3:25 | |
Twenty Five-Minute Intermission - |
| 3:55 | 773 |
Microstructure and the Optical Properties of InxGa1-xN Alloys -
F.A. Ponce, S. Srinivasan, F. Bertram, A. Bell, L. Geng (Arizona State University), S. Tanaka, H.
Omiya, and Y. Nakagawa (Nichia Corp.) |
| 4:25 | 774 |
N-Type Doping of High Aluminum Concentration Algan Based Materials for Optoelectronic Applications - S.
Guo, M. Pophristic, B. Peres (EMCORE Corporation), and I. Ferguson (Georgia Institute of Technology) |
| 4:45 | 775 |
Enhancement of Photoluminescence and Microstructure of Undoped ZnO Thin Film Growth on Al_2O3 (0001) Substrate by rf Magnetron Sputtering - J.
Cho, K. Yoon (Yonsei University), M. Oh, and W. Choi (Korea Institute of Science and Technology) |
| 5:05 | 776 |
Thermodynamics for Fabricating AlN/alon/sapphire Double Epitaxial Layers as an Advanced Substrate for Blue/Ultraviolet Optical Devices - H. Fukuyama, W.
Nakao, and K. Nagata (Tokyo Institute of Technology) |
| 5:25 | 777 |
Optical Acceptor Ionization in III-Nitrides - S.F.
LeBouef, E.B. Stokes, A. Cao, A. Ebong, and P. Sandvik (General Electric Corporate Research & Development) |
Wednesday, May 15, 2002
Conference Rooms 302-303, Level 3
Co-Chairs: T.D. Moustakas and F. Ren
| Time | Abs# | Title |
|---|
| 8:20 | 778 |
Thermal Stability of Ni-based Ohmic Contacts to n-SiC For High Temperature and Pulsed Power Device Applications - M. Cole, P. Joshi, C. Hubbard, D.
Demaree, and M. Ervin (U.S. Army Research Laboratory) |
| 8:50 | 779 |
Electron Injection-Induced Effects in III-Nitrides - L. Chernyak (University of Central Florida) |
| 9:20 | 780 |
GaN and SiC Power Rectifiers - J. Kim (University of Florida) |
| 9:40 | 781 |
Effect of Proton Radiation on dc And rf Performance of AlGaN/GaN HEMTs - B. Luo (University of Florida) |
| 10:00 | 782 |
Annealing Behavior of Ar Implanted GaN - I.
Usov, N. Parikh (University of North Carolina at Chapel Hill), D. Thomson, Z.
Reitmeier, and R. Davis (North Carolina State University) |
| 10:20 | 783 |
Electrical Characteristics of a New Ni-MPS Rectifier - K.-Y. Park, H.-H.
Choi, J.-S. Kim, S.-Y. Kwon, and S.-Y. Choi (Kyungpook National University) |
|