203rd Meeting - Paris, France
April 27-May 2, 2003
PROGRAM INFORMATION
F2 - Thin Film Materials, Processes, and Reliability: Plasma Processing for the 100 nm Node and Copper Interconnects with Low-k Inter Level Dielectric Films
Dielectric Science and Technology/Electronics
Wednesday, April 30, 2003
Room 253, Level 2, Le Palais des Congres
Plasma Processing
Co-Chairs: G.S. Mathad and V. Bakshi
| Time | Abs# | Title |
|---|
| 8:20 | 392 |
Investigation on the OH Influence for the Dielectric Constant Evolution in Low K Films Prepared by PECVD in DECR Reactor - Z. Aziz, R. Patrice (UPS), S. Salah, R. Saida (Universite Mentouri), and S. Yvan (UPS) |
| 8:40 | 393 |
Plasma Treatment Enhanced Stress Behavior, Chemical and Thermal Stability of Advanced SiC:H Film - B. Remiat (ST-Microelectronics Central R and D), F. Gaillard (Applied Materials), F. Fusalba (ST-Microelectronics Central R and D), J. Durand (Institut Europeen des Membranes), V. Jousseame (CEA-Grenoble), and G. Passemard (ST-Microelectronics Central R and D) |
| 9:00 | 394 |
Effect of Plasma Sulfur Activation of SiLK on the Adhesion of Copper - D.-L. Bae, J. Senkevich, Y. Kwon, and T. Cale (Rensselaer Polytechnic Institute) |
| 9:20 | 395 |
Gas-Phase and Surface Reactions in Plsma Enhanced Chemical Etching of High-K Dielectrics - L. Sha and J. Chang (UCLA) |
| 9:40 | |
Twenty-Minute Intermission |
| 10:00 | 396 |
A Comparative Study of the Etching Behavior of Thin AlN and Al2O3 Films - M. Engelhardt (Infineon Technologies) |
| 10:20 | 397 |
Etching of Low-Interconnect Materials for Next Generation Devices - T. Chevolleau, O. Joubert, L. Vallier, N. Posseme (LTM-CNRS), and I. Thomas (ST Microelectronics) |
| 10:50 | 398 |
Study of Porous SIOC Modification after Ashing Processes - N. Posseme, T. Chevolleau, L. Vallier, O. Joubert (LTM/CNRS), and I. Thomas-Boutherin (ST Microelectronics) |
| 11:10 | 399 |
Resist Transformation under Low-K Dielectric Plasma Patterning Processes : Impact on the Process Control - E. Pargon, N. Posseme, L. Vallier, and O. Joubert (LTM/CNRS) |
| 11:30 | 400 |
Study of Effect of Plasma Etching on LER - V. Bakshi (International SEMATECH, Inc.) |
| 11:50 | 401 |
Modeling Investigation of Plasma Clean Processes - D. Zhang, D. Denning, and I. Shahvandi (Motorola, Inc.) |
Copper Deposition, Barrier, and Low-k Films
Co-Chairs: F. Leverd and O. Joubert
| Time | Abs# | Title |
|---|
| 13:40 | 402 |
Preparation of Cu Films on Polymer Substrate by ECR-MOCVD Coupled with DC Bias at Room Temperature - J.K. Lee (Korea Institute of Science and Technology), J. Hyun, H. Ko, D. Byun (Korea University), B.W. Cho, and D. Park (Korea Institute of Science and Technology) |
| 14:00 | 403 |
Effect of Novel Plasma Treatment on Superfilling Behavior in Chemically Enhanced CVD (CECVD) CU Process - S.G. Pyo, W.S. Min, D.W. Lee, S. Kim, and J.-G. Lee (Hynix Semiconductor) |
| 14:20 | 404 |
A Model of Copper Deposition for the Damascene Process - C. Gabrielli, J. Kittel, P. Mocoteguy, H. Perrot (Universite Paris 6), A. Zdunek, P. Bouard, M. Haddix, L. Doyen (Air Liquide), and M.C. Clech (ALTIS Semiconductor) |
| 14:40 | 405 |
ECD Seed Copper Layer for Seed Enhancement in Advanced Interconnects - S. Da Silva, M. Cordeau, P.H. Haumesser (CEA Grenoble), X. Avale, O. Pollet (Semitool, Inc.), T. Mourier, G. Passemard (CEA Grenoble), R. Baskaran, and T. Ritzdorf (Semitool, Inc.) |
| 15:00 | 406 |
Microstructural Evolution at Room Temperature in Electrodeposited Copper Metallization - S. Ahmed and D.N. Buckley (University of Limerick) |
| 15:50 | 407 |
“Seedless” Electrochemical Deposition of Copper on Liner Materials for ULSI Devices - D.J. Duquette, S. Kim (Rensselaer Polytechnic Institute), and M.J. Shaw (Sandia National Laboratory) |
| 15:50 | |
Twenty-Minute Intermission |
| 16:10 | 408 |
A New Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier with NH3 Pulse Plasma and WF6 Gas - Y.T. Kim, H.S. Sim, and S.-I. Kim (Korea Institute of Science and Technology) |
| 16:30 | 409 |
Nanostructured Ta-Si-N Thin Films as Diffusion Barriers Between Cu and SiO2 - L.W. Lai, C.C. Chang, J.-S. Chen (National Cheng Kung University), and Y.K. Lin (National Tsing Hua University) |
| 16:50 | 410 |
Selectivity Studies on Tantalum and Tantalum Nitride Barrier Layer in Copper CMP - A. Vijayakumar, T. Du (University of Central Florida), K. Sundaram (Universitu of Central Florida), and V. Desai (University of Central Florida) |
| 17:10 | 411 |
Investigation of Barrier Layers for Cu - Ultra Low k Porous SiLK TM Integration - L.Y. Yang and D.H. Zhang (Nanyang Technological University) |
| 17:30 | 412 |
Introducing Advanced ULK Dielectric Materials In Interconnects: Performance And Integration Challenges - F. Fusalba (ST-Microelectronics), V. Jousseaume (CEA-LETI), B. Remiat (ST-Microelectronics), C. Lecornec (CEA-LETI), P. Maury, and G. Passemard (ST-Microelectronics) |
Salon Concorde Monceau, Level 4, Le Palais des Congres
Informal Discussion: Integration Challenges of Copper with Porous Low-k Films
Co-Chairs: M. Fury and H. Rathore
| Time | Abs# | Title |
|---|
| 19:00 | |
Panel Discussion on Integration Challenges of Copper w/Porous Low-k |
Thursday, May 1, 2003
Room 253, Level 2, Le Palais des Congres
Low-k Films, Copper CMP, and Reliability
Co-Chairs: H. Rathore and G. Banerjee
| Time | Abs# | Title |
|---|
| 8:00 | 413 |
X-ray Photoelectron Spectroscopic Study of Surface Modification of SiLK* by Diluted Oxygen Under UV-irradiation - Y. Uchida, T. Fukuda, and H. Yanazawa (Association of Super-Advanced Electronics Technologies) |
| 8:20 | 414 |
Surface Modification and Material Degradation of Porous Low-K and Polymer Dielectrics - Q.T. Le, C. Whelan, S. Brongersma (IMEC), and K. Maex (Katholieke Universiteit Leuven) |
| 8:40 | 415 |
Comparison of Water Sorbability of Various Dielectric Films by Thermal Desorption Spectroscopy - H. Yanazawa, Y. Uchida, T. Fukuda, and H. Itoh (Association of Super-Advanced Electronic Technologies) |
| 9:00 | 416 |
The Roles of Complexing Agents on Copper CMP - T.E. Kim, G. Lim, J.H. Lee, J. Kim, and H.W. Lee (Korea Institute of Science and Technology) |
| 9:20 | 417 |
The Effect of Inhibitor and Complexing Agents on Cu CMP - Y. Luo, T. Du, and V. Desai (University of Central Florida) |
| 9:40 | |
Twenty-Minute Intermission |
| 10:00 | 418 |
Role of Oxidizer and Inhibitor on Chemical Mechanical Planarization of Copper - S. Kuiry and S. Seal (University of Central Florida) |
| 10:20 | 419 |
Evaluation of Fixed Abrasive Technology for 90nm Node Cu/low-k CMP Process - S.-C. Hu, T.-C. Tsai, F. Yang, C.-F. Dai, C.-C. Huang, G. Li, and T.-R. Yew (UMC CRD1/Adv. TF) |
| 10:40 | 420 |
Effect of Abrasive Particles on Chemical Mechanical Polishing Performance - D. Tamboli, G. Banerjee, S. Chang, M. Waddell, I. Butcher, Q. Arefeen, and S. Hymes (Ashland Specialty Chemicals) |
| 11:00 | 421 |
Investigation of Copper Permeability into Interlayer Dielectrics by Copper CMP Process - T. Miyazawa, I. Kobayashi (Nissan Chemical Industries, LTD.), M. Uchida, M. Fujimoto, and T. Hara (Hosei University) |
| 11:20 | 422 |
Electrochemical Planarization of Copper - T. Du and V. Desai (University of Central Florida) |
| 11:40 | 423 |
A Multiscale Mechanical CMP Model for Patterned Wafers - C. Sukam, J. Seok, A. Kim, J. Tichy, and T. Cale (Rensselaer Polytechnic Institute) |
Low-k Films and Advanced Interconnects
Co-Chairs: M. Engelhardt and T. Cale
| Time | Abs# | Title |
|---|
| 13:40 | 424 |
Industry Challenges in Post-Etch Cleaning Chemistries for Advanced Copper/Low-\kappa Applications - M. Fury (DuPont EKC Technology) |
| 14:10 | 425 |
Cleaning of Copper Surface using Vapor-Phase Organic Acids - T. Yagishita, K. Ishikawa, and M. Nakamura (Association of Super-advanced Electronics Technologies) |
| 14:30 | 426 |
An Improvement of I-V characteristics in Cu-damascene Interconnects by Use of Supercritical Fluid Treatments - I. Kato, M. Kawagoe, S. Shishiguchi, T. Fukuda, and H. Yanazawa (Association of Super-Advanced Electronics Technologies) |
| 14:50 | 427 |
Characterization of Low-k Materials in Terms of Copper Contamination by Copper Electroplating Solution - M. Shudo, Y. Fujita, T. Miyazawa, I. Kobayashi (Nissan Chemical Industries, Ltd.), and T. Hara (Hosei University) |
| 15:10 | 428 |
Time-Zero Failure Current Measurement for Early Monitoring of Defective Cu Lines at Wafer Level - J.H. Park and B.T. Ahn (Korea Advanced Institute of Science and Technology) |
| 15:30 | 429 |
3-D Electromigration Simulation and Modeling in Copper - Low-K Multilevel Interconnect - V. Sukharev, R. Choudhury, and C. Park (LSI Logic Corporation) |
| 15:50 | |
Twenty-Minute Intermission |
| 16:10 | 430 |
Electromigration Charcteristics of Copper Damascene Interconnects Integrated with SiLK, Low k-Dielectric - H.S. Rathore, D.B. Nguyen, and B. Agarwala (IBM Microelectronics) |
| 16:30 | 431 |
The Impact of Wafer-Level Layer Transfer on High Performance Devices and Circuits for 3D IC Fabrication - K. Guarini, A. Topol (IBM), M. Ieong, R. Yu (IBM Microelecctronics), L. Shi, D. Singh, G. Cohen (IBM), H. Pogge (IBM Microelecctronics), S. Purushothaman, and W. Haensch (IBM) |
| 17:00 | 432 |
Wafer Bonding and Thinning Integrity for 3D-IC Fabrication - Y. Kwon, A. Jindal, J. McMahon, T. Cale, R. Gutmann, and J.-Q. Lu (Rensselaer Polytechnic Institute) |
| 17:20 | 433 |
3D-Integration of Integrated Cicuits by Interchip Vias (ICV) and CU/SN Solid Liquid Interdiffusion (Solid) - P. Ramm, K. Armin, and W. Robert (Fraunhofer Institute IZM, Munich) |
| 17:40 | 434 |
3D System-on-a-Chip using Dielectric Glue Bonding and Cu Damascene Inter-Wafer Interconnects - J.J.-Q. Lu, T. Cale, and R. Gutmann (Rensselaer Polytechnic Institute) |
Level 2 Hallway, Le Palais des Congres
Thursday Evening Poster Session
| Time | Abs# | Title |
|---|
| o | 435 |
Pulsed Liquid Injection MOCVD of Magnesium Oxide Thin Films - S. Thollon, E. Rouviere, F. Emieux (Commissariat a l'Energie Atomique de Grenoble), and H. Guillon (JIPELEC) |
| o | 436 |
Electroless Metallization of Hydrogen-Terminated Silicon Surface Functionalized by Viologen - W.H. Yu, E.T. Kang, and K.G. Neoh (National University of Singapore) |
| o | 437 |
The Stability of Carbon-Doped Silicon Oxide Low Dielectric Constant Thin Films - Y. Wang and R. Kumar (Institute of Microelectronics) |
| o | 438 |
Nanoporous Low-k Polyimide Films Prepared from Poly(acrylic acid)- and Poly(ethylene glycol)-grafted-Poly(amic acid) Copolymers - W.C. Wang, E.T. Kang, K.G. Neoh, C.K. Ong, and L.F. Chen (National University of Singapore) |
| o | 439 |
Kinetic Modeling for Multi-Component Thin Film Growth in Plasma Enhanced Atomic Layer Deposition - J.-H. Kim, J.-Y. Kim, P.-K. Park, and S.-W. Kang (Korea Advanced Institute of Science and Technology) |
| o | 440 |
Atomic Layer Deposition of Ruthenium Glue Layer for Copper Damascene Interconnect - O.-K. Kwon, J.-H. Kim, and S.-W. Kang (Korea Advanced Institute of Science and Technology) |
| o | 441 |
Annealing Characteristics of Copper Films for Power Device Applications - L. Castoldi, G. Visalli, S. Morin (STMicroelectronics Srl), T. Fukada, O. Brux, M. Ouaknine, E.H. Roh, and W.S. Yoo (WaferMasters, Inc.) |
| o | 442 |
Nickel Silicide Formation Using a Stacked Hotplate-Based Low Temperature Annealing System - T. Murakami (WaferMasters Service Factory), B. Froment (STMicroelectronics Srl), M. Ouaknine, and W.S. Yoo (WaferMasters, Inc.) |
| o | 443 |
Investigation of the Plasma Etching-Induced Pore Structure Transformation and Diffusion of Fluorine in Porous Low-k Thin Films - K.H. Lee, J.-H. Rhee, S.K. Mah, J.-B. Kim, J.-H. Yim, H.-J. Shin, Y.-S. Chung, and H.-D. Jeong (Samsung Advanced Institute of Technology) |
| o | 444 |
TiZrN as a Copper Barrier for 0.13 and 0.09uM Technology Nodes - D. Denning, I. Shahvandi, C. Prindle, and L. Svedberg (Motorola Inc.) |
| o | 445 |
Modeling of Thermal Dynamics and Mechanical Stress in 3D-IC Structure - J. Zhang, J.-Q. Lu, R. Gutmann, and T. Cale (Rensselaer Polytechnic Institute) |
| o | 446 |
Chemical Mechanical Planarization of Ruthenium for Capacitor Bottom Electrode in DRAM Technology - S.-H. Lee, Y.-J. Kang, J.-G. Park (Hanyang University), S.-I. Lee, and W.-J. Lee (Hynix Semiconductor Inc.) |
| o | 447 |
Study of Plasma Immersion Ion Implantation Induced Damage on Ultra-thin Gate Dielectrics - A. Prasad, V. Agarwal, R. Dusane, and R. Rao (Indian Institute of Technology, Bombay) |
| o | 448 |
The Effect of Oxygen Plasma Treatment on Methylsilesequiazane (MSZ) Material for CMP Process - P.-T. Liu (National Nano Device Laboratory), T.-C. Chang (National Sun Yat-Sen University), T.-M. Tsai, S.-T. Yan (National Chiao Tung University), H. Aoki (Clariant Corp.), and T.-Y. Tseng (National Chiao Tung University) |
| o | 449 |
Incidence of Various Deposition Parameters on the Structural Properties of Y_2O3 Grown by Pulsed Injection PE-MOCVD - C. Vallee, C. Durand, M. Bonvalot, O. Joubert (CNRS), and C. Dubourdieu (LMGP) |
| o | 450 |
Structural and Electrical Characteristics of Low-Dielectric Constant Porous Hydrogen Silsesquioxane for Cu Metallization - J.-H. Wang (National Tsing Hua University) |
| o | 451 |
Experimental Detection of the Chemical Mechanical Polishing (CMP) Process End Point for Different Interconnect Materials - A. Sikder, P. Zantye, and A. Kumar (Nanomaterials and Nanomanufacturing Research Center) |
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