2004 Joint International Meeting

October 3-October 8, 2004

PROGRAM INFORMATION

M3 - State-of-the-Art Program on Compound Semiconductors XLI

Electronics

Monday, October 4, 2004

South Pacific 4, Level 6, Mid Pacific Conference Center

Electronic Devices and Processing

Co-Chairs: A. Baca and A. Osinski

Time	Abs#	Title
10:00	1404	Recent Progress on InP HBT Technology and Applications - A. Gutierrez-Aitken, D. Sawdai, P. Chang, C. Monier, V. Gambin, A. Cavus, M. Barsky, B. Oyama, J. Matsui, K. Tsai, B. Chan, and A.K. Oki (Northrop Grumman Space Technology)
10:30	1405	Characterization of InGaAs Self-Mixing Detectors for Amplitude-Modulated LADAR - M. Gerhold (Army Research Office), K. Aliberti (Army Research Lab), P. Shen (Army Research Alb), R. Mehandru, and S. Jan (University of Florida)
11:00	1406	Advanced GaAs HEMT Technologies for Ultra Low-Noise and Millimeter Wave Power Applications - M.-Y. Kao, M. Heins, S. Chen, Q. Wang, J. Delaney, S. Nayak, and P. Saunier (TriQuint Semiconductor)
11:30	1407	Chemical Functionalization of GaAs Surfaces - M. Traub and N. Lewis (California Institute of Technology)

Materials, Processing, Devices, and Simulation

Co-Chairs: D. Buckley and R. Kopf

Time	Abs#	Title
14:00	1408	Unique Capabilities of Chemically-Assisted Ion-Beam Etching for Compound Semiconductor Devices (invited) - G.A. Vawter and C. Alford (Sandia National Laboratories)
14:30	1409	An Innovative Planarization Technology for Ultra High Frequency InP/InGaAs Heterojunction Bipolar Transistor (HBT) Manufacturing - X. Zeng, P.C. Chang, J. Yamamoto, D. Sawdai, A. Gutierrez-Aitken, M. Barsky, S. Olson, and A. Oki (Northrop Grumman Space Technology)
15:00	1410	Spectrometric Monitoring Method for Concentration of Hydrogen Peroxide in a Chemical Etching Solution of GaAs - K. Shigyo, S. Umemura, and M. Kinugawa (Mitsubishi Electric Corporation, Advanced Technology R&D Center)
15:15	1411	Effects of Nano-sized Interface on the Electrical Resistances of the P-GaAs Wafer Bonding - H. Ouyang, J.-H. Cheng, and Y.S. Wu (National Chung Hsing University)
15:30		Fifteen-Minute Intermission
15:45	1412	Characterization of 1.55ìm Light Emitting â-FeSi2 Nano-dots and Metallic Silicide Nano-wires - L. Chou, Y. Chueh, and S. Cheng (National Tsing Hwa University)
16:15	1413	MgZnO/ZnO Heterostructures for UV Light Emitters and Spintronic Applications: Material Growth and Device Design. - A. Osinsky, J. Dong, M.Z. Kauser, A.M. Dabiran, C. Plaut, P.P. Chow (SVT Associates), S.J. Pearton (University of Florida), X. Dong, and C.J. Palmstrom (University of Minnesota)
16:45	1414	Predicting VCSEL Performance by Thermal Model - N. Das and W. Chang (Army Research Laboratory)
17:00	1415	Structural and Optical Characterization of Non-polar A-plane III Nitride Thin Films Grown on R-plane Sapphire via High-Temperature AlN Nucleation Layers by Metalorganic Chemical Vapor Deposition - D. Lu, A. Parekh, V. Merai, J. Ramer, E. Udovich, D. Lee, D. Florescu, M. Begarney, and E. Armour (Veeco TurboDisc Operations)
17:30	1416	Numerical Simulation of a Directional Selectivity Model for Anodic Formation of Porous InP. - R. Lynch, C. O'Dwyer, I. Clancy, D. Corcoran, and D.N. Buckley (University of Limerick)

Tuesday, October 5, 2004

Materials, Growth, Processing, and Devices

Co-Chairs: K. Shiojima and W. Chan

Time	Abs#	Title
08:30	1417	Effect of Mesa Formation Process on Negative Differential Conductance of GaInP/GaAs Triple Barrier Resonant Tunneling Diodes - M. Suhara, N. Asaoka, M. Fukumitsu, H. Horie, and T. Okumura (Department of Electrical Engineering, Tokyo Metropolitan University)
09:00	1418	Electrochemical Formation of Nanoporous InP - D.N. Buckley, C. O’Dwyer, R. Lynch, D. Sutton, and S. Newcomb (University of Limerick)
09:30		Thirty-Minute Intermission
10:00	1419	Planar Sub-Micron InP/InGaAs Heterojunction Bipolar Transistor - V. Gambin, P.C. Chang, D. Sawdai, A. Cavus, X. Zeng, J. Yamamoto, K. Loi, G.S. Leslie, D. Li, J. Wang, R. Elmadijan, P. Nam, C. Grossman, M. Barsky, A. Gutierrez-Aitken, and A. Oki (Northrup Grumman Space Technology)
10:30	1420	Fabrication of Indium-doped n-Fe2O3 Thin Films by Spray Pyrolytic Method for Photoelectrochemical Water Splitting - W.B. Ingler Jr. and S.U.M. Khan (Duquesne University)
10:45	1421	III-V Ternary Bulk Crystal Growth Technology - P. Dutta (Rensselaer Polytechnic Institute)
11:00	1422	Preparation of cubic silicon carbide with smooth surface on carbonized porous silicon - J. Komiyama, Y. Abe, S. Suzuki, and H. Nakanishi (Toshiba Ceramics Co. Ltd.)
11:15	1423	Wafer Level and Chip Size Direct Bonding at Room Temperature - M. Howlader and T. Suga (University of Tokyo)
11:30	1424	Efficient Photoelectrochemical Production of Hydrogen from Water by a Carbon Modified (CM)- n-TiO2 Thin Film Electrode - Y. Shaban and S. Khan (Duquesne University)

Coral Lounge, Level 6, Mid Pacific Conference Center

Tuesday Evening Poster Session and Technical Exhibit

Time	Abs#	Title
o	1425	Au/In2 Bonding of InP-based MOEMS - M. Strassner, J. Dion, and I. Sagnes (Laboratoire de Photonique et Nanostructures)
o	1426	Monolithic Highly Selective Long Wavelength Resonant Vertical-Cavity Enhanced Photodetector with Two InP/Air-Gap DBRs - M. Strassner, C. Mériadec, S. Bouchoule, J.-C. Esnault, and I. Sagnes (Laboratoire de Photonique et Nanostructures)
o	1427	High output power GaAs-based Vertical External Cavity Surface Emitting Lasers achieved by AuIn2 Solid Liquid Inter Diffusion Bonding - J. Dion (STMicroelectronics), I. Sagnes, and M. Strassner (Laboratoire de Photonique et de Nanostructures)