Co-Chairs: D. Lockwood and A. Stella
| Time | Abs# | Title |
|---|---|---|
| 10:00 | 1007 | Self-Assembled Quantum Dots for Optoelectronic Devices: Progress and Challenges - M. Henini (University of Nottingham) |
| 10:40 | 1008 | Excitonic Fock-Darwin Spectra in Quantum Dots - S. Raymond, S. Studenikin, A. Sachrajda, Z. Wasilewski (National Research Council of Canada), S.-J. Cheng (National Chiao Tung University), and W. Sheng (National Research Council of Canada) |
| 11:20 | 1009 | Electrical and Optical Properties of Colloidal Quantum Dots: Role of Surface States - M. Stroscio and M. Dutta (University of Illinois at Chicago) |
| 12:00 | 1010 | Optical and Electrical Properties of Ge Nanowire –Si substrate One-dimensional Heterojunctions - L. Tsybeskov, B. Kamenev, V. Sharma, E.K. Lee (New Jersey Institute of Technology), P. Fosh (Mscow State University), T. Kamins, and S. Williams (Hewlett-Packard Laboratories) |
| 12:20 | 1011 | Electrochemical growth of individually addressable palladium nanowires. - M.A. Bangar, K. Ramanathan (University of California, Riverside), M. Yun (Jet Propulsion Laboratory), W. Chen, A. Mulchandani, and N.V. Myung (University of California, Riverside) |
Co-Chairs: S. Bandyophadhyay and J. Leburton
| Time | Abs# | Title |
|---|---|---|
| 14:00 | 1012 | Electron Transport Properties and Device Applications of Nanocrystalline Silicon Quantum Dots - H. Mizuta (Tokyo Institute of Technology), M. Khalafalla, Z. Durrani (University of Cambridge), S. Uno (Hitachi Cambridge Laboratory), N. Koshida (Tokyo University of Agriculture and Technology), Y. Tsuchiya, and S. Oda (Tokyo Institute of Technology) |
| 14:40 | 1013 | Characterization of Charged States of Si Quantum Dots Floating Gate in MOS Structures - S. Miyazaki, T. Shibaguchi, and M. Ikeda (Hiroshima University) |
| 15:00 | 1014 | Carrier and Phonon Transport in Ge/Si Quantum Dot Superlattices - A. Balandin (University of California - Riverside) |
| 15:20 | Twenty-Minute Intermission |
Co-Chairs: J. Leburton and S. Bandyopadhyay
| Time | Abs# | Title |
|---|---|---|
| 15:40 | 1015 | Semiconducting Carbon Nanotubes as Three-terminal Devices - J. Appenzeller (IBM T.J. Watson Research Center) |
| 16:20 | 1016 | Design and Implementation of Ultra-Small and Ultra-Low-Power Digital Systems Utilizing A Hexagonal BDD Quantum Circuits on GaAs-based Hexagonal Nanowire Network Structures - S. Kasai, M. Yumoto, T. Tamura, I. Tamai, T. Sato, and H. Hasegawa (Hokkaido University) |
| 16:40 | 1017 | MOSFET Tunneling Spectroscopy at Low Temperature - M. Bao, F. Liu, and K.L. Wang (University of California, Los Angeles) |
| 17:00 | 1018 | Accurate Three-Dimensional Simulation of Electron Mobility Including Electron-Electron and Electron-Dopant Interactions - C. Heitzinger, C. Ringhofer, S. Ahmed, and D. Vasileska (Arizona State University) |
Co-Chairs: H. Hasegawa and A. Balandin
| Time | Abs# | Title |
|---|---|---|
| 08:00 | 1019 | Spintronic Transport: Coherence and Numerical Modeling - V. Privman (Clarkson University) |
| 08:40 | 1020 | Full scale simulation of spin-qubit quantum dots and circuits - L. Zhang, J. Kim, D. Melnikov, and J.-P. Leburton (University of Illinois) |
| 09:00 | 1021 | Ocillatory Magnetoresistance in a Spin Field Effect Transistor - M. Cahay (University of Cincinnati) and S. Bandyopadhyay (Virginia Commonwealth University) |
| 09:20 | 1022 | Anomalous Magnetic Properties of Strongly Correlated Electrons on a Semiconductor Surface: Experimental Study - S. Kravchenko (Northeastern University) |
| 09:40 | Twenty-Minute Intermission |
Co-Chairs: N. Koshida and S. Raymond
| Time | Abs# | Title |
|---|---|---|
| 10:00 | 1023 | Harmonic Generation in Metallic Nanoscale Systems - A.M. Malvezzi (Dipartimento di Elettronica, Università degli Studi di Pavia) |
| 10:40 | 1024 | Optical Properties of Nanometer-Thick Single Quantum Wells of Crystalline Silicon - D.J. Lockwood (Institute for Microstructural Sciences) and Z.-H. Lu (Department of Materials Science and Engineering) |
| 11:00 | 1025 | A Critique of the Existing Models for Excitation Exchange Between Silicon Nanoclusters and Erbium Ions in Silica - A. Kenyon and F. Lucarz (University College London) |
| 11:20 | 1026 | Effects of Aging on the Broadband Luminescence of Semiconductor Nanocrystals - B. Abrams, J. Wilcoxon, S. Thoma, and A. Sanchez (Sandia National Laboratories) |
| 11:40 | 1027 | Optimization of Soft Bake Step for the Low-k Application using Novel Porous Ladder-type HSQ - J.-H. Cho, J.-H. Lee, J.-S. Choi, and S.-M. Chon (Samsung Electronics Co., LTD.) |
Co-Chair: N. Koshida
| Time | Abs# | Title |
|---|---|---|
| 14:00 | 1028 | Improvement in the Efficiency of Thermally-Induced Ultrasonic Emission from Porous Silicon by Nano-structural Control - K. Tsubaki, T. Komoda (Matsushita Electric Works, Ltd.), and N. Koshida (Tokyo University of Agriculture and Technology) |
| 14:20 | 1029 | Fabrication of Luminescent Porous Silicon Layers Using Extremely Dilute HF Solutions - H. Koyama and K. Takemura (Hyogo University of Teacher Education) |
| 14:40 | 1030 | Enhancement of Photoluminescence of Nanocrystalline Porous Silicon by High-Pressure Water Vapor Annealing - B. Gelloz (Tokyo University of Agriculture and Technology), A. Kojima (Quantum14 Co.), and N. Koshida (Tokyo University of Agriculture and Technology) |
Co-Chairs: M. Henini and S. Bandyopadhyay
| Time | Abs# | Title |
|---|---|---|
| 15:00 | 1031 | Adsorption of Alkanethiol Self-Assembled Monolayers on Sputtered Gold Substrates for Atomic Nanolithography Applications - C. O'Dwyer (Université Toulouse III) |
| 15:20 | 1032 | Combinatorial Approach of Redox-Active Ru/Os Complex Units Towards Layered Molecular Devices - M.-A. Haga, M. Sannodo, K. Hanakura, and Y. Hashimoto (Chuo University) |
| 15:40 | 1033 | Sub-100 nm Feature Definition Optimization using Cold Cs Beam Exposed Self-Assembled Monolayers on Au - C. O'Dwyer (Université Toulouse III) |
Co-Chairs: S. Bandyopadhyay and M. Henini
| Time | Abs# | Title |
|---|---|---|
| 16:20 | 1034 | Three-dimensional AlGaAs nano-heterostructures using both VLS and MOVPE growth mode - K. Tateno, H. Gotoh (NTT Basic Research Laboratories, NTT corporation), and Y. Watanabe (NTT Advanced Technology Corporation) |
| 16:40 | 1035 | Surface Effects on the Chemical and Optical Properties of Semiconductor Nanocrystals - J. Wilcoxon (Sandia National Laboratories), J. Kraus (U.of Washington), and B. Abrams (Sandia National Laboratories) |
| 17:00 | 1036 | Fabrication of two-dimensional arrays of graded oxide thin films by the LPI Method - S. Iizuka, M. Mizuhata, A. Kajinami, and S. Deki (Kobe University) |
| 17:20 | 1037 | Encapsulation of Semiconducting Nanoparticles in Amine-Functionalized Ormosils. - S. Thoma, J. Wilcoxon, B. Abrams, and A. Sanchez (Sandia National Laboratories) |
| 17:40 | 1038 | Nanostructured SnO2-SiO2 glassceramic thin films for photonic applications - N. Chiodini, A. Paleari, G. Spinolo (Università Milano-Bicocca, Dip. Scienza dei Materiali), and M. Romagnoli (Pirelli labs S.p.A.) |
| 18:00 | 1039 | Selective MBE Growth of High-Density Hexagonal Nanowire Networks on Pre-Patterned GaAs (001) and (111)B Substrates - I. Tamai, T. Sato, T. Hashizume, and H. Hasegawa (Research Center for Integrated Quantum Electronics, Hokkaido University) |
Co-Chairs: S. Bandyopadhyay and M. Cahay
| Time | Abs# | Title |
|---|---|---|
| o | 1040 | Calculation on Cyclopyranose as C-Nanotube Co-solvents - F. Torrens (Universitat de Valencia-Inst. Ciencia Molecular) |
| o | 1041 | Practical Wafer-Compatible Fabrication of Nanocrystalline Silicon Thermally Induced Ultrasound Emitters - T. Kihara, T. Harada (Yamatake Corporation), and N. Koshida (Tokyo University of Agriculture and Technology) |
| o | 1042 | Dielectric Spectroscopy on Ga Nanoparticles in Glassy Matrix: Negative Capacitane Effect - G. Parravicini, A. Stella (Università di Pavia), M.C. Ungureanu (Scuola Normale Superiore di Pisa), and R. Kofman (Université de Nice-Sophia Antipolis) |
| o | 1043 | Nonlinear Optical Response of Nanoparticle Single Layers: Polarization and Structural Effects - S. Achilli, M. Allione (Dipartimento di Fisica “A.Volta”, Università di Pavia), R. Kofman (LPMC, UMR6622, Universitè de Nice-Antipolis), A.M. Malvezzi (Dipartimento di Elettronica, Università di Pavia), M. Patrini, and A. Stella (Dipartimento di Fisica “A.Volta”, Università di Pavia) |
| o | 1044 | Optical Study of Strain-driven Tuning of the Emission Energy in InAs/InGaAs Quantum-dot Nanostructures - M. Geddo (INFM – Pavia and Dipartimento di Fisica, Università di Parma), G. Guizzetti, V. Bellani, M. Patrini, T. Ciabattoni (INFM-Dipartimento di Fisica “A. Volta”, Università di Pavia), L. Seravalli, P. Frigeri, M. Minelli, and S. Franchi (CNR - IMEM Institute) |
| o | 1045 | Electrical Device Structures Using Fe_2O3 Nano-Particles Embedded in Polyimide - J.H. Kim, E.K. Kim (Department of Physics, Hanyang University), M.S. Song, and Y.H. Kim (Division of Materials Science & Engineering, Hanyang University) |
| o | 1046 | DLTS Study on Self-Assembled InAs/GaAs Quantum Dots Grown by MBE - E.K. Kim, J.S. Kim, J.H. Kim (Department of Physics, Hanyang University), S.J. Lee, and S.K. Noh (Korea Research Institute of Science and Standard) |
| o | 1047 | Deposition of Low Resistivity Copper Interconnection Layers Electroplated on Electroless Plating Copper Seed Layer - T. Hara (Hosei University) |