203rd Meeting - Paris, France
April 27-May 2, 2003
PROGRAM INFORMATION
I1 - Electrochemical Processing in ULSI Fabrication and Electrodeposition of and on Semiconductors VI
Electrodeposition/Dielectric Science and Technology/Electronics
Thursday, May 1, 2003
Room 352A, Level 3, Le Palais des Congres
Compound Electrodeposition
Co-Chairs: G. Zangari and U. Happek
| Time | Abs# | Title |
|---|
| 8:00 | 663 |
Metal and Semiconductor Electrodeposition: Ultra Thin Films and Nanowires - I. Mukhopadhyay and W. Freyland (University of Karlsruhe) |
| 8:20 | 664 |
Electrodeposition of Ferromagnetic Metals on GaAs - P. Evans, C. Scheck, R. Schad (University of Alabama), and G. Zangari (University of Virginia) |
| 8:40 | 665 |
Formation of UPD and Metallic Adlayers on Well-defined Single Crystal Surfaces - J. Gutierrez de Dios, R. Gomez, and J.M. Feliu (Universidad de Alicante) |
| 9:00 | 666 |
Epitaxial Electrodeposition of Cuprous Oxide onto Single Crystal Silicon (001) - J. Switzer, R. Liu, E. Bohannan, and H. Kothari (University of Missouri-Rolla) |
| 9:20 | 667 |
Electrochemical Synthesis of Nanostructured Mesoporous Tellurium and Cadmium Telluride Films - I. Nandhakumar, T. Gabriel, and G. Attard (University of Southampton) |
| 9:40 | |
Twenty-Minute Intermission |
| 10:00 | 668 |
Preparation and Characterization of Cu doped p-CdTe and In doped n-CdTe films by Electrodeposition - M. Takahashi, N. Ohnishi, H. Goto, A. Nishiwaki, K. Wakita, and M. Wakanabe (Chubu University) |
| 10:20 | 669 |
Investigation of Superlattices and Nanostructures Formed by Electrochemical Atomic Layer Epitaxy - U. Happek, L. Pham, S. Cox, S. Compton, R. Vaidyanathan, and J. Stickney (University of Georgia) |
| 10:40 | 670 |
Preparation of the High Quality CdTe Films on P-Si (111) Substrate by Pulsed Light Assisted Electrodeposition - M. Takahashi, Y. Sano, N. Ohnishi, A. Nishiwaki, K. Wakita, and M. Watanabe (Chubu University) |
| 11:00 | 671 |
Site Selective Electrodeposition of Cd on Au(111) as Template for Nanoscale Semiconductor Stuctures - Y. Zhang, S. Maupai, and P. Schmuki (LKO) |
| 11:20 | 672 |
Electrochemical Quartz Crystal Microbalance Studies of CdTe Formation and Dissolution in Ammoniacal Basic Aqueous Electrolytes - K. Murase, Y. Tanaka, T. Hirato, and Y. Awakura (Kyoto University) |
| 11:40 | 673 |
Electrochemical Quartz Crystal Microgravimetry Analysis of the Electrodeposition and Stripping of Bi_2Te3 Films - N. Stein, P. Bommersbach, C. Boulanger, and J.-M. Lecuire (University of Metz) |
Cu Electrodeposition
Co-Chairs: I. Nandhakumar and J.L. Stickney
| Time | Abs# | Title |
|---|
| 13:40 | 674 |
Effect of Acidity on Reduction of Defects in Electroplated CU Film - S.G. Pyo, D.W. Lee, C.J. Ko, S. Kim, and J.-G. Lee (Hynix Semiconductor) |
| 14:00 | 675 |
Impact of the Additives and the Current Density of Copper Electroplating Process on the Backend-of-Line Metallization of ULSI - S.B. Law (Chartered Semiconductor Manufacturing Ltd), S. Loh (Nanyang Technological University), H.W. Ng, B.B. Zhou, H. Zhang, W.L. Tan, J. Sudijono, and L.C. Hsia (Chartered Semiconductor Manufacturing Ltd) |
| 14:20 | 676 |
Detection of Suppressor Breakdown Contaminants in Copper Plating Baths - P. Bratin, G. Chalyt, A. Kogan, M. Pavlov, J. Perpich, and M. Tench (ECI Technology, Inc.) |
| 14:40 | 677 |
Cl- Consumption in Copper Electrodeposition - M. Hayase, M. Taketani, K. Aizawa, T. Hatsuzawa (Tokyo Institute of Technology), and K. Hayabusa (Ebara Research Co., LTD) |
| 15:00 | 678 |
The Effect and Detection of Short Chain PEGs in Copper Damascene Electroplating Process - A. Jaworski and K. Wikiel (Technic Inc.) |
| 15:20 | 679 |
An Investigation of Copper Deposition from Dilute HF Solutions Containing Multiple Metal Ions - X. Cheng, X. Zheng, Y.-D. Liang, and Y. Zhang (Xiamen University) |
| 15:40 | |
Twenty-Minute Intermission |
| 16:00 | 680 |
Dissolution of Copper in Hydrogen Peroxide Solutions - A. Al-Hinai (Sultan Qaboos University) and K. Osseo-Asare (Pennsylvania State University) |
| 16:20 | 681 |
Electron-Beam Induced Carbon Nanomasking for Plating of Copper on Semiconductors - T. Djenizian and P. Schmuki (University of Erlangen-Nuremberg) |
| 16:40 | 682 |
Photoluminescence: In Situ Probe to Follow the Quality of Cu Electrodeposition - P. Tran-Van, I. Gérard, C. Mathieu, and A. Etcheberry (University of Versailles) |
| 17:00 | 683 |
Characterization of Self and Thermal Annealed Copper Films Electroplated by Various Chemistries - S. Loh, D.H. Zhang (Nanyang Technological University), S.B. Law, and J. Sudijono (Chartered Semiconductor Manufacturing Ltd) |
| 17:20 | 684 |
Dendritic Growth of Copper in Microgravity and Strong Magnetic Field - Y. Fukunaka, Y. Tanaka, Y. Konishi, E. Kusaka, R. Ishii, I. Mogi (Kyoto University), and K. Kuribayashi (Institute of Space and Astro. Science) |
Level 2 Hallway, Le Palais des Congres
Thursday Evening Poster Session
| Time | Abs# | Title |
|---|
| o | 685 |
Electrodeposition of Gold on (111) and (-1-1-1 ) n-GaAs - L.M. Depestel and K. Strubbe (Universiteit Gent) |
| o | 686 |
Electrodeposition of Copper onto n-GaN - A.S. Huyghebaert and K. Strubbe (Universiteit Gent) |
| o | 687 |
Micropatterning of a Conducting Polymer Covalently Bound to Silicon - B. Fabre and D.D.M. Wayner (National Research Council of Canada) |
| o | 688 |
Colloidal Aspects of CMP - T. Gopal and J. Talbot (Univeristy of California, San Diego) |
| o | 689 |
Formation of Ultrathin CdS-Films On CU(111) - An In-Situ STM Study - S. Humann, P. Broekmann, and K. Wandelt (Universitat Bonn) |
| o | 690 |
Phase Transitions at Cu(100) in the Presence of Thiocyanate Anions - C. Safarowsky, A. Spaenig, P. Broekmann, and K. Wandelt (Universitat Bonn) |
| o | 691 |
Effect of Metal-Complexes and Chelating Agents in Metal CMP Slurry - J. Lee, W. Lim, D. Kang, I. Lee, and K. Lee (Cheil Industries) |
| o | 692 |
Electrodeposition of TiO2 Thin Films Promoted by Anodic Oxidation of Dihydroxybenzene - S. Sawatani, T. Yoshida, T. Ohya, T. Ban, Y. Takahashi, and H. Minoura (Gifu University) |
| o | 693 |
Chemical Mechanical Polishing (CMP) Characteristics of Silica Slurry Remaked by Mixing of Original and One-Used Slurry - K.-J. Lee, Y.-J. Seo (Daebul University), and S.-Y. Kim (ANAM Semiconductor,INC.) |
| o | 694 |
Chemical Mechanical Polishing (CMP) Characteristics of Diluted Slurry by Adding of Silica Abrasives - C.-J. Park, Y.-J. Seo (Daebul University), and S.-Y. Kim (ANAM Semiconductor, Inc.) |
| o | 695 |
Influence of Surface Defects on the Metal Electrochemical Deposition onto P-type Si - L. Santinacci, T. Djenizian, and P. Schmuki (University of Erlangen) |
| o | 696 |
Fabrication of Microdevices and ULSI by Combining Surface Treatment and Electroless Metallization - T. Khoperia (Georgian Academy of Sciences) |
| o | 697 |
Epitaxial Electrodeposition of ZnSe on (111) and (100) InP from Selenium/DMSO Solutions - R. Henríquez, H. Gómez, G. Riveros (Universidad Catolica de Valparaiso), J. Gillemoles, D. Lincot (Ecole Nationale Superieure de Chimie de Paris), M. Froment, M.C. Bernard, and R. Cortes (Universite Pierre et Marie Curie) |
Friday, May 2, 2003
Room 352A, Level 3, Le Palais des Congres
Barrier Layers and CMP
Co-Chairs: J.A. Kelber and J.L. Stickney
| Time | Abs# | Title |
|---|
| 8:00 | 698 |
Control of Electroless Cobalt(Tungsten) Damascene Plating Baths - P. Bratin, G. Chalyt, A. Kogan, M. Pavlov, J. Perpich, and M. Tench (ECI Technology, Inc.) |
| 8:20 | 699 |
Cu Electroplating on High Resistivity TiN Barrier by Aid of Pd Activation - J.J. Kim, S.-K. Kim, and Y.S. Kim (Seoul National University) |
| 8:40 | 700 |
Cu Electrodeposition on W: Surface Effects on Film Nucleation and Growth - J.A. Kelber, J. Liu, C. Wang, S. Rudenja, N. Magtoto, and C. Bjelkevig (University of North Texas) |
| 9:00 | 701 |
Autocatalytic Cobalt as Barrier Metallization for Tin Solder Alloys - V. Sirtori, S. Seregni (Celestica Italia), L. Magagnin, and P.L. Cavallotti (Politecnico di Milano) |
| 9:20 | 702 |
Tin-Copper Alloys Electroplating from Thiourea Solutions - M. Bestetti, A. Vicenzo, and P.L. Cavallotti (Politecnico di Milano) |
| 9:40 | |
Twenty-Minute Intermission |
| 10:00 | 703 |
Relation between Surface Oxide Growth of Thin TaN Film and Cu Displacement Plating - S. Shingubara, Z. Wang, O. Yaegashi, T. Takahagi, and H. Sakaue (Hiroshima University) |
| 10:20 | 704 |
Electrochemical View of Copper Chemical Mechanical Polishing Process - V. Desai and T. Du (University of Central Florida) |
| 10:40 | 705 |
Effects of the Slurry Chemicals on the Planarization Mechanism of W CMP - G. Lim, J.H. Lee, J. Kim, H.W. Lee (Korea Institute of Science and Technology), and S.H. Hyun (Yonsei University) |
| 11:00 | 706 |
Kinematic Study on the Passivation and Dissolution of Tungsten Surface during Tungsten CMP Process - G. Lim, J.-H. Lee, J. Kim, H.W. Lee (Korea Institute of Science and Technology), and S.H. Hyun (Yonsei University) |
| 11:20 | 707 |
Electrochemical Characterization of Transition Metal CMP - J. Jayashankar (Seagate Technology), U. Patri (Clarkson University), and E. Johns (Seagate Technology) |
| 11:40 | 708 |
Evaluation of the Properties of Polyurethane Pads and their Correlation to the Performance in the CMP Process - P. Zantye, A. Sikder, A. Kumar, A. Belyaev, I. Tarasov, and S. Ostapenko (Nanomaterials and Nanomanufacturing Research Center) |
Theory and Semiconductor Surface Chemistry
Co-Chair: J.L. Stickney
| Time | Abs# | Title |
|---|
| 13:40 | 709 |
Feature Scale-Modeling for Chip-Scale Models of Copper Electrochemical Deposition - Y.H. Im, M. Bloomfield, and T.S. Cale (Rensslaer Polytechnic Institute) |
| 14:00 | 710 |
Convection Prevailing Regimes in Thin-Layer Electrodeposition - G. Marshall, E. Mocskos, F. Molina, G. Gonzalez, S. Dengra (University of Buenos Aires), and M. Rosso (Ecole Polytechnique) |
| 14:20 | 711 |
Roughness Scaling of Cyclical Electrodeposition/Dissolution of Copper - A. Osafo-Acquaah, J. Jorne, and Y. Shapir (University of Rochester) |
| 14:40 | 712 |
Modeling of Pulse-Plating in High Aspect Ratio Recesses for MEMS - M. Georgiadou and D. Veyret (Universitaire de Marseille) |
| 15:00 | 713 |
Electrochemical Formation of n-GaAs / Ag Contacts - K. Strubbe, A. De Vrieze, and W. Gomes (Ghent University) |
| 15:20 | 714 |
Fabrication of TiO2-Ru(O2)/Al2O3 Composite Nanostructures on Glass by Al Anodization and Electrodeposition - S.-Z. Chu, S. Inoue, K. Wada, and S. Hishita (National Institute for Materials Science (NIMS)) |
| 15:40 | |
Twenty-Minute Internission |
| 16:00 | 715 |
Silver Electroless Plating on Substrate Activated by Gold for Interconnection in Microelectronic Device - S.H. Cha, H.-C. Koo, O.J. Kwon, and J.J. Kim (Seoul National University) |
| 16:20 | 716 |
Improved Passivation of the Anodic Oxide / p-Si Interface Induced by Electron Injection at Room Temperature - J. Rappich, T. Burke (Hahn-Meitner-Institut), and T. Dittrich (TU-Munchen) |
| 16:40 | 717 |
SC1 Cleaning Effect on Electrical Characteristics of 256M-bit Mobile DRAM with Dual Gate Oxide - C. Lee (Seoul National University), N. Jo, C. Hwang (Samsung Electronics Co., Ltd.), H.J. Kim (Seoul National University), and W. Lee (Samsung Electronics Co., Ltd.) |
| 17:00 | 718 |
Electromigration Characteristics of Al/W-N/LOW-k/Si Submicrion Interconnect Structure - Y.T. Kim, H.S. Sim, and S.-I. Kim (Korea Institute of Science and Technology) |
| 17:20 | 719 |
Functionalization of Si(111) Surfaces with Thiophene-Terminated Monolayers for the Electrodeposition of Covalently Bound Polythiophene - B. Fabre and D.D.M. Wayner (National Research Council of Canada) |
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