203rd Meeting - Paris, France

April 27-May 2, 2003


I1 - Electrochemical Processing in ULSI Fabrication and Electrodeposition of and on Semiconductors VI

Electrodeposition/Dielectric Science and Technology/Electronics

Thursday, May 1, 2003

Room 352A, Level 3, Le Palais des Congres

Compound Electrodeposition

Co-Chairs: G. Zangari and U. Happek

8:00663 Metal and Semiconductor Electrodeposition: Ultra Thin Films and Nanowires - I. Mukhopadhyay and W. Freyland (University of Karlsruhe)
8:20664 Electrodeposition of Ferromagnetic Metals on GaAs - P. Evans, C. Scheck, R. Schad (University of Alabama), and G. Zangari (University of Virginia)
8:40665 Formation of UPD and Metallic Adlayers on Well-defined Single Crystal Surfaces - J. Gutierrez de Dios, R. Gomez, and J.M. Feliu (Universidad de Alicante)
9:00666 Epitaxial Electrodeposition of Cuprous Oxide onto Single Crystal Silicon (001) - J. Switzer, R. Liu, E. Bohannan, and H. Kothari (University of Missouri-Rolla)
9:20667 Electrochemical Synthesis of Nanostructured Mesoporous Tellurium and Cadmium Telluride Films - I. Nandhakumar, T. Gabriel, and G. Attard (University of Southampton)
9:40 Twenty-Minute Intermission
10:00668 Preparation and Characterization of Cu doped p-CdTe and In doped n-CdTe films by Electrodeposition - M. Takahashi, N. Ohnishi, H. Goto, A. Nishiwaki, K. Wakita, and M. Wakanabe (Chubu University)
10:20669 Investigation of Superlattices and Nanostructures Formed by Electrochemical Atomic Layer Epitaxy - U. Happek, L. Pham, S. Cox, S. Compton, R. Vaidyanathan, and J. Stickney (University of Georgia)
10:40670 Preparation of the High Quality CdTe Films on P-Si (111) Substrate by Pulsed Light Assisted Electrodeposition - M. Takahashi, Y. Sano, N. Ohnishi, A. Nishiwaki, K. Wakita, and M. Watanabe (Chubu University)
11:00671 Site Selective Electrodeposition of Cd on Au(111) as Template for Nanoscale Semiconductor Stuctures - Y. Zhang, S. Maupai, and P. Schmuki (LKO)
11:20672 Electrochemical Quartz Crystal Microbalance Studies of CdTe Formation and Dissolution in Ammoniacal Basic Aqueous Electrolytes - K. Murase, Y. Tanaka, T. Hirato, and Y. Awakura (Kyoto University)
11:40673 Electrochemical Quartz Crystal Microgravimetry Analysis of the Electrodeposition and Stripping of Bi_2Te3 Films - N. Stein, P. Bommersbach, C. Boulanger, and J.-M. Lecuire (University of Metz)

Cu Electrodeposition

Co-Chairs: I. Nandhakumar and J.L. Stickney

13:40674 Effect of Acidity on Reduction of Defects in Electroplated CU Film - S.G. Pyo, D.W. Lee, C.J. Ko, S. Kim, and J.-G. Lee (Hynix Semiconductor)
14:00675 Impact of the Additives and the Current Density of Copper Electroplating Process on the Backend-of-Line Metallization of ULSI - S.B. Law (Chartered Semiconductor Manufacturing Ltd), S. Loh (Nanyang Technological University), H.W. Ng, B.B. Zhou, H. Zhang, W.L. Tan, J. Sudijono, and L.C. Hsia (Chartered Semiconductor Manufacturing Ltd)
14:20676 Detection of Suppressor Breakdown Contaminants in Copper Plating Baths - P. Bratin, G. Chalyt, A. Kogan, M. Pavlov, J. Perpich, and M. Tench (ECI Technology, Inc.)
14:40677 Cl- Consumption in Copper Electrodeposition - M. Hayase, M. Taketani, K. Aizawa, T. Hatsuzawa (Tokyo Institute of Technology), and K. Hayabusa (Ebara Research Co., LTD)
15:00678 The Effect and Detection of Short Chain PEGs in Copper Damascene Electroplating Process - A. Jaworski and K. Wikiel (Technic Inc.)
15:20679 An Investigation of Copper Deposition from Dilute HF Solutions Containing Multiple Metal Ions - X. Cheng, X. Zheng, Y.-D. Liang, and Y. Zhang (Xiamen University)
15:40 Twenty-Minute Intermission
16:00680 Dissolution of Copper in Hydrogen Peroxide Solutions - A. Al-Hinai (Sultan Qaboos University) and K. Osseo-Asare (Pennsylvania State University)
16:20681 Electron-Beam Induced Carbon Nanomasking for Plating of Copper on Semiconductors - T. Djenizian and P. Schmuki (University of Erlangen-Nuremberg)
16:40682 Photoluminescence: In Situ Probe to Follow the Quality of Cu Electrodeposition - P. Tran-Van, I. Gérard, C. Mathieu, and A. Etcheberry (University of Versailles)
17:00683 Characterization of Self and Thermal Annealed Copper Films Electroplated by Various Chemistries - S. Loh, D.H. Zhang (Nanyang Technological University), S.B. Law, and J. Sudijono (Chartered Semiconductor Manufacturing Ltd)
17:20684 Dendritic Growth of Copper in Microgravity and Strong Magnetic Field - Y. Fukunaka, Y. Tanaka, Y. Konishi, E. Kusaka, R. Ishii, I. Mogi (Kyoto University), and K. Kuribayashi (Institute of Space and Astro. Science)

Level 2 Hallway, Le Palais des Congres

Thursday Evening Poster Session

o685 Electrodeposition of Gold on (111) and (-1-1-1 ) n-GaAs - L.M. Depestel and K. Strubbe (Universiteit Gent)
o686 Electrodeposition of Copper onto n-GaN - A.S. Huyghebaert and K. Strubbe (Universiteit Gent)
o687 Micropatterning of a Conducting Polymer Covalently Bound to Silicon - B. Fabre and D.D.M. Wayner (National Research Council of Canada)
o688 Colloidal Aspects of CMP - T. Gopal and J. Talbot (Univeristy of California, San Diego)
o689 Formation of Ultrathin CdS-Films On CU(111) - An In-Situ STM Study - S. Humann, P. Broekmann, and K. Wandelt (Universitat Bonn)
o690 Phase Transitions at Cu(100) in the Presence of Thiocyanate Anions - C. Safarowsky, A. Spaenig, P. Broekmann, and K. Wandelt (Universitat Bonn)
o691 Effect of Metal-Complexes and Chelating Agents in Metal CMP Slurry - J. Lee, W. Lim, D. Kang, I. Lee, and K. Lee (Cheil Industries)
o692 Electrodeposition of TiO2 Thin Films Promoted by Anodic Oxidation of Dihydroxybenzene - S. Sawatani, T. Yoshida, T. Ohya, T. Ban, Y. Takahashi, and H. Minoura (Gifu University)
o693 Chemical Mechanical Polishing (CMP) Characteristics of Silica Slurry Remaked by Mixing of Original and One-Used Slurry - K.-J. Lee, Y.-J. Seo (Daebul University), and S.-Y. Kim (ANAM Semiconductor,INC.)
o694 Chemical Mechanical Polishing (CMP) Characteristics of Diluted Slurry by Adding of Silica Abrasives - C.-J. Park, Y.-J. Seo (Daebul University), and S.-Y. Kim (ANAM Semiconductor, Inc.)
o695 Influence of Surface Defects on the Metal Electrochemical Deposition onto P-type Si - L. Santinacci, T. Djenizian, and P. Schmuki (University of Erlangen)
o696 Fabrication of Microdevices and ULSI by Combining Surface Treatment and Electroless Metallization - T. Khoperia (Georgian Academy of Sciences)
o697 Epitaxial Electrodeposition of ZnSe on (111) and (100) InP from Selenium/DMSO Solutions - R. Henríquez, H. Gómez, G. Riveros (Universidad Catolica de Valparaiso), J. Gillemoles, D. Lincot (Ecole Nationale Superieure de Chimie de Paris), M. Froment, M.C. Bernard, and R. Cortes (Universite Pierre et Marie Curie)

Friday, May 2, 2003

Room 352A, Level 3, Le Palais des Congres

Barrier Layers and CMP

Co-Chairs: J.A. Kelber and J.L. Stickney

8:00698 Control of Electroless Cobalt(Tungsten) Damascene Plating Baths - P. Bratin, G. Chalyt, A. Kogan, M. Pavlov, J. Perpich, and M. Tench (ECI Technology, Inc.)
8:20699 Cu Electroplating on High Resistivity TiN Barrier by Aid of Pd Activation - J.J. Kim, S.-K. Kim, and Y.S. Kim (Seoul National University)
8:40700 Cu Electrodeposition on W: Surface Effects on Film Nucleation and Growth - J.A. Kelber, J. Liu, C. Wang, S. Rudenja, N. Magtoto, and C. Bjelkevig (University of North Texas)
9:00701 Autocatalytic Cobalt as Barrier Metallization for Tin Solder Alloys - V. Sirtori, S. Seregni (Celestica Italia), L. Magagnin, and P.L. Cavallotti (Politecnico di Milano)
9:20702 Tin-Copper Alloys Electroplating from Thiourea Solutions - M. Bestetti, A. Vicenzo, and P.L. Cavallotti (Politecnico di Milano)
9:40 Twenty-Minute Intermission
10:00703 Relation between Surface Oxide Growth of Thin TaN Film and Cu Displacement Plating - S. Shingubara, Z. Wang, O. Yaegashi, T. Takahagi, and H. Sakaue (Hiroshima University)
10:20704 Electrochemical View of Copper Chemical Mechanical Polishing Process - V. Desai and T. Du (University of Central Florida)
10:40705 Effects of the Slurry Chemicals on the Planarization Mechanism of W CMP - G. Lim, J.H. Lee, J. Kim, H.W. Lee (Korea Institute of Science and Technology), and S.H. Hyun (Yonsei University)
11:00706 Kinematic Study on the Passivation and Dissolution of Tungsten Surface during Tungsten CMP Process - G. Lim, J.-H. Lee, J. Kim, H.W. Lee (Korea Institute of Science and Technology), and S.H. Hyun (Yonsei University)
11:20707 Electrochemical Characterization of Transition Metal CMP - J. Jayashankar (Seagate Technology), U. Patri (Clarkson University), and E. Johns (Seagate Technology)
11:40708 Evaluation of the Properties of Polyurethane Pads and their Correlation to the Performance in the CMP Process - P. Zantye, A. Sikder, A. Kumar, A. Belyaev, I. Tarasov, and S. Ostapenko (Nanomaterials and Nanomanufacturing Research Center)

Theory and Semiconductor Surface Chemistry

Co-Chair: J.L. Stickney

13:40709 Feature Scale-Modeling for Chip-Scale Models of Copper Electrochemical Deposition - Y.H. Im, M. Bloomfield, and T.S. Cale (Rensslaer Polytechnic Institute)
14:00710 Convection Prevailing Regimes in Thin-Layer Electrodeposition - G. Marshall, E. Mocskos, F. Molina, G. Gonzalez, S. Dengra (University of Buenos Aires), and M. Rosso (Ecole Polytechnique)
14:20711 Roughness Scaling of Cyclical Electrodeposition/Dissolution of Copper - A. Osafo-Acquaah, J. Jorne, and Y. Shapir (University of Rochester)
14:40712 Modeling of Pulse-Plating in High Aspect Ratio Recesses for MEMS - M. Georgiadou and D. Veyret (Universitaire de Marseille)
15:00713 Electrochemical Formation of n-GaAs / Ag Contacts - K. Strubbe, A. De Vrieze, and W. Gomes (Ghent University)
15:20714 Fabrication of TiO2-Ru(O2)/Al2O3 Composite Nanostructures on Glass by Al Anodization and Electrodeposition - S.-Z. Chu, S. Inoue, K. Wada, and S. Hishita (National Institute for Materials Science (NIMS))
15:40 Twenty-Minute Internission
16:00715 Silver Electroless Plating on Substrate Activated by Gold for Interconnection in Microelectronic Device - S.H. Cha, H.-C. Koo, O.J. Kwon, and J.J. Kim (Seoul National University)
16:20716 Improved Passivation of the Anodic Oxide / p-Si Interface Induced by Electron Injection at Room Temperature - J. Rappich, T. Burke (Hahn-Meitner-Institut), and T. Dittrich (TU-Munchen)
16:40717 SC1 Cleaning Effect on Electrical Characteristics of 256M-bit Mobile DRAM with Dual Gate Oxide - C. Lee (Seoul National University), N. Jo, C. Hwang (Samsung Electronics Co., Ltd.), H.J. Kim (Seoul National University), and W. Lee (Samsung Electronics Co., Ltd.)
17:00718 Electromigration Characteristics of Al/W-N/LOW-k/Si Submicrion Interconnect Structure - Y.T. Kim, H.S. Sim, and S.-I. Kim (Korea Institute of Science and Technology)
17:20719 Functionalization of Si(111) Surfaces with Thiophene-Terminated Monolayers for the Electrodeposition of Covalently Bound Polythiophene - B. Fabre and D.D.M. Wayner (National Research Council of Canada)