203rd Meeting - Paris, France

April 27-May 2, 2003


J1 - ALTECH 2003-Analytical Techniques for Semiconductor Materials and Process Characterization IV


Monday, April 28, 2003

Room 253, Level 2, Le Palais des Congres

Impurities: Metals

Co-Chairs: B.O. Kolbesen and F. Tardif

10:20720 Copper Behavior in Bulk Silicon and Associated Characterization Techniques - T. Heiser, A. Belayachi, and J.-P. Schunck (Laboratoire PHASE/CNRS)
10:50721 Qunatification Issues of Trace Metal Contaminants on Silicon Wafers by Means of TOF-SIMS ICP-MS and TXRF - P. Rostam-Khani, P. Vullings, G. Noij, O. O'Halloran, and W. Claassen (Philips Semiconductors BV)
11:20722 Determination of the Al-induced Surface Charge by AC Surface Photovoltage Measurements in N-Type Silicon Wafers - H. Shimizu, M. Ikeda, and R. Shin (Nihon University)
11:40723 In-Line Copper Contamination Monitoring Using Non-contact Q-V-SPV Techniques - M. Boehringer, J. Hauber (Robert Bosch GmbH), S. Passefort, and K. Eason (KLA-Tencor Corporation)

Impurities: Metals, Non-metals, Organics

Co-Chairs: L. Fabry and A. Peaker

13:40724 Recent Developments in Nuclear Methods in Support of Semiconductor Characterization - B. Brijs, H. Bender, C. Huyghebaert, T. Janssens, and W. Vandervorst (IMEC)
14:10725 Determination of Oxygen in Semiconductor Silicon by Gas Fusion Analysis GFA - Historical and Future Trends - S. Pahlke and L. Fabry (Wacker Siltronic AG)
14:40726 High Sensitivity Measurement of Nitrogen in Czochralski Silicon - M. Porrini, R. Scala, and V.V. Voronkov (MEMC Electronic Materials)
15:00727 Hydrogen Contamination and Defect Generation in p-type Silicon and Silicon-Germanium Schottky Barrier Test Structures - F. Volpi, A.R. Peaker (University of Manchester), I. Berbezier, and A. Ronda (CRMC2-CNRS)
15:20728 The Use of the TEM as a Nanoscale Laboratory for Point Defect Creation and Agglomeration in Silicon - N. Stoddard, G. Duscher, A. Kvit, and G. Rozgonyi (North Carolina State University)
15:40 Twenty-Minute Intermission
16:00729 The Application of Synchrotron Radiation to Semiconductor Materials Characterisation - R. Barrett (European Synchrotron Radiation Facility)
16:30730 Ultra-Trace Analysis of Light Elements and Speciation of Minute Organic Contaminants on Silicon Wafer Surfaces by Means of TXRF in Combination with NEXAFS - B. Beckhoff, R. Fliegauf, G. Ulm, J. Weser (Physikalisch-Technische Bundesanstalt), G. Pepponi, C. Streli, P. Wobrauschek (Atominstitut der Oesterreichischen Universitaeten), T. Ehmann, L. Fabry, C. Mantler, S. Pahlke (Wacker Siltronic AG), B. Kanngiesser, and W. Malzer (Institut fuer Atomare Physik und Fachdidaktik)
16:50731 Characterization of Trace Organic Contamination on Silicon Surfaces in Semiconductor Manufacturing - K. Saga and T. Hattori (Sony Corporation)
17:20732 Characterization of Advanced Semiconductor Materials by Thermal Desorption Mass Spectrometry with Atmospheric Pressure Ionization - L. Carbonell, G. Vereecke, C. Jehoul, M. Gallagher, D. Gronbeck, S. Van Elshocht, M. Caymax, K. Maex, and P. Mertens (IMEC)
17:40733 Analysis of Trace VOCS' in Clean Room Air with PDMS/Carboxen SPME Fibers - V. Teetaert (CRCD), L. Tuduri, V. Desauziers (EMA), and M. Camenzind (Balazs Analytical Services)

Tuesday, April 29, 2003

Thin Films

Co-Chairs: F. Tardif and P. Stallhofer

8:00734 Stress Management in IC Manufacturing: µ-Raman Spectroscopy Re-visited - L.F.T. Kwakman, D. Delille (Philips Semiconductors Crolles), G. Lucazeau, M. Mermoux, A. Crisci, and G. Lucazeau (LEPMI/ENSEEG)
8:30735 Characterization and Metrology of Novel Materials Involved in Advanced CMOS Processes - C. Wyon (STMicroelectronics)
9:00736 Physical Characterization of Thin HfO_2 Layers by the Combined Analysis with Complimentary Techniques - H. Bender, T. Conard, O. Richard, B. Brijs, J. Petry, W. Vandervorst (IMEC), C. Defranoux (SOPRA), N. Rochat, C. Wyon (CEA-LETI), P. Mack, J. Wolstenholme (Thermo VG Scientific), R. Vitchev, L. Houssiau, J. Pireaux (FUNDP), A. Bergmaier, and G. Dollinger (TUM)
9:20737 Analytical Characterization of Process Parameter Influence on the Initial Growth and Crystallinity of Atomic Layer Deposition HfO_2 Thin Film - D. Blin (ASM France), N. Rochat, G. Rolland, P. Holliger, F. Martin, J.-F. Damlencourt, T. Lardin (CEA - LETI), P. Besson (ST Microelectronics), S. Haukka (ASM Microchemistry), and M.-N. Semeria (CEA - LETI)
9;40 Twenty-Minute Intermission
10:00738 Application of XRF Spectrometry in Characterization of High-k Ultra-Thin Films - C. zhao, B. Brijs (IMEC), W. Besling (Philips Semiconductors Crolles), J. Maes (ASM Belgium), S. De Gendt, M. Caymax, and M. Heyns (IMEC)
10:20739 High-Resolution Analysis of the Hf02-SiO2 Interface by Soft X-Ray Photoelectron Spectroscopy - O. Renault (CEA-Grenoble), N.T. Barrett (CEa-Saclay), D. Samour, J.F. Damlencourt (CEA-Grenoble), D. Blin (ASM France), F. Martin, and S. Marthon (CEA-Grenoble)
10:40740 Optical Characterization of High-k Materials Deposited by ALCVD - E. Bellandi, B. Crivelli, A. Elbaz, M. Alessandri (STMicroelectronics), P. Boher, and C. Defranoux (SOPRA S.A.)
11:00741 Scanning Probe Microscopy Methods for Semiconductor Inspection - S. Grafstrom and L.M. Eng (University of Technology Dresden)
11:30742 Charging Effects on Ferroelectric SBT Thin Films Imaged by Noncontact Electrostatic Force Microscopy - N. Junghans and B.O. Kolbesen (Johann Wolfgang Goethe-University Frankfurt)
11:50743 Two Dimensional Carrier Profiling Using Scanning Capacitance Microscopy - N. Duhayon, D. Alvarez, P. Eyben, M. Fouchier, M. Xu, T. Clarysse, W. Vandervorst (IMEC VZW), and L. Hellemans (K.U.Leuven)

Non-destructive and Optical Methods

Co-Chairs: H. Bender and C. Claeys

13:40744 Infra Red Spectroscopic Ellipsometry, Instrumentation, and Semiconductor Applications - J.-L. Stehle (SOPRA S.A.)
14:10745 Infra Red Spectroscopic Ellipsometry for Semiconductor Applications : A New Metrology Tool for 300 Silicon Wafer Technology - P. Boher, J.L. Stehle, M. Bucchia, and C. Defranoux (SOPRA)
14:30746 Macroscopic and Microscopic Photoluminescence Mapping System Applicable to 300 mm Wafers - M. Tajima, Z. Li (Institute of Space and Astronautical Science), and R. Shimidzu (Photon Design Co., Ltd.)
14:50747 In-line and Nondestructive Analysis of Epitaxial Si1-x-yGexCy by Spectroscopic Ellipsometry and Comparison with Other Established Techniques - R. Loo (IMEC), P. Meunier-Beillard (Philips Research Leuven), R. Delhounge (IMEC), T. Koumoto (Sony Corporation Semiconductor Network Company), L. Geenen, and B. Brijs (IMEC)
15:10748 Characterisation of Bulk and Surface Properties in Semiconductors Using Non-Contacting Techniques - A. Castaldini, D. Cavalcoli, A. Cavallini, and M. Rossi (University of Bologna)
15:30 Twenty-Minute Intermission
15:50749 Focused Ion Beam Analysis of Cu/Low-k Metallization Structures - H. Bender (IMEC)
16:20750 Detection and Classification of Post-CMP Defects With a Laser Surface Scanning System - D. Lodi (STMicroelectronics), G. Lorenzi (KLA-Tencor Italy), M. Renis, and G. Spinolo (STMicroelectronics)
16:40751 Characterization and Mechanism of Device Failure due to Hollow Via Formation - C. Hatcher, R. Lappan, J. Prasad, and M. Engle (AMI Semiconductor, Inc.)
17:00752 A Technique for Void Detection using Electron-Beam-Based Wafer Inspection - M. Matsui, C. Zhaohui, and K. Torii (Hitachi Ltd.)
17:20753 ZrO_2 as Dielectric Material for Device Characterization with Scanning Capacitance Microscopy - W. Brezna, S. Harasek (TU Wien), H. Enichlmair (Austria Mikro Systeme International AG), E. Bertagnolli, E. Gornik, and J. Smoliner (TU Wien)
17:40754 Potential and Pitfalls of the Diode Characterization Technique for ULSI Devices Analysis - A. Poyai, E. Simoen, and C. Claeys (IMEC)

Hall Maillot, Level 2, Le Palais des Congres

Technical Exhibit and Tuesday Evening Poster Session

Co-Chairs: B.O. Kolbesen and C.L. Claeys

o755 DLTS Fill-pulse Effect on the Emission Rate Enhancement in Electron-irradiated Highly Doped P-type InP - R. Darwich and B. Massarani (Atomic Energy Commission of Syria)
o756 TXRF Characterization of Inhomogenous Solids: Influence of Surface Morphology - N. Alov, K. Oskolok (M. V. Lomonosov Moscow State University), A. Wittershagen (SEZ AG), and B. Kolbesen (J. W. Goethe University of Frankfurt am Main)
o757 Analysis of Oxygen Thermal Donor Formation in n-type Cz Silicon - J.M. Rafí, E. Simoen, C. Claeys (IMEC), A. Ulyashin, R. Job, W. Fahrner (University of Hagen), J. Versluys, P. Clauws (University of Ghent), M. Lozano, and F. Campabadal (Institut de Microelectronica de Barcelona)
o758 In-Situ Electrochemical Sensor for Early Detection of Plating Problems in Copper Damascene Process - K. Wikiel and A. Jaworski (Technic, Inc.)
o759 Ag Electrodeposition on n-InP Followed In Situ by Photoluminescence - I. Gérard, C. Mathieu, P. Tran-Van, and A. Etcheberry (Universite de Versailles)
o760 Cleaning Chemistry with Complexing Agents (CA): Direct Concentration Measurement of CAs with HPLC - S. Metzger and B. Kolbesen (Johann Wolfgang Goethe-University)
o761 Complexing Agents (CAs) for Semiconductor Cleaning Chemistries: Characterization of CA Lifetimes by UV/VIS-Spectroscopy - O. Doll and B. Kolbesen (Johann Wolfgang Goethe-University Frankfurt a. Main)
o762 Characterization of Heavy Metal Contamination by Capacitance-Frequency Method - K. Hara, M. Takahashi, H. Yoshida, and S. Kishino (Himeji Institute of Technology)
o763 Study by Spectroellipsometry of the InP Surface Evolution by Cerium Acidic Solution - B. Canava, J. Vigneron, A. Etcheberry (Universite de Versailles St-Quentin-en-Yvelines), M. Stchakovsky, and J.-P. Gaston (Jobin Yvon S.A.S)
o764 SSMS Analysis of Low Carbon Contents in Single Crystalline Silicon - B. Wiedemann, J.D. Meyer (J. W. Goethe-Universitaet), H.C. Alt (FHM - Munich University of Applied Sciences), and H. Riemann (Institute of Crystal Growth)
o765 Characterization of Nano-Laminate Structures Using Grazing Incidence XRD - C. Zhao (IMEC), J.W. Maes (ASM Belgium), G. Roebben (KU Leuven), S. DeGendt, M. Caymax (IMEC), O. Van Der Biest (KU Leuven), and M. Heyns (IMEC)
o766 Spectroscopic Ellipsometry in the VUV Range Applied to the Characterization of ALD HfO2, Al2O3 and HfAlOx Thin Layers for High K Dielectrics - P. Boher, C. Defranoux (SOPRA), and H. Bender (IMEC)
o767 Characterization by Electrochemistry and Chemical Surface Analysis of an Oxide Film on n-InP - N.C. Quach, I. Gerard, N. Simon, and A. Etcheberry (Universite de Versailles)


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