203rd Meeting - Paris, France
April 27-May 2, 2003
PROGRAM INFORMATION
J1 - ALTECH 2003-Analytical Techniques for Semiconductor Materials and Process Characterization IV
Electronics
Monday, April 28, 2003
Room 253, Level 2, Le Palais des Congres
Impurities: Metals
Co-Chairs: B.O. Kolbesen and F. Tardif
| Time | Abs# | Title |
|---|
| 10:20 | 720 |
Copper Behavior in Bulk Silicon and Associated Characterization Techniques - T. Heiser, A. Belayachi, and J.-P. Schunck (Laboratoire PHASE/CNRS) |
| 10:50 | 721 |
Qunatification Issues of Trace Metal Contaminants on Silicon Wafers by Means of TOF-SIMS ICP-MS and TXRF - P. Rostam-Khani, P. Vullings, G. Noij, O. O'Halloran, and W. Claassen (Philips Semiconductors BV) |
| 11:20 | 722 |
Determination of the Al-induced Surface Charge by AC Surface Photovoltage Measurements in N-Type Silicon Wafers - H. Shimizu, M. Ikeda, and R. Shin (Nihon University) |
| 11:40 | 723 |
In-Line Copper Contamination Monitoring Using Non-contact Q-V-SPV Techniques - M. Boehringer, J. Hauber (Robert Bosch GmbH), S. Passefort, and K. Eason (KLA-Tencor Corporation) |
Impurities: Metals, Non-metals, Organics
Co-Chairs: L. Fabry and A. Peaker
| Time | Abs# | Title |
|---|
| 13:40 | 724 |
Recent Developments in Nuclear Methods in Support of Semiconductor Characterization - B. Brijs, H. Bender, C. Huyghebaert, T. Janssens, and W. Vandervorst (IMEC) |
| 14:10 | 725 |
Determination of Oxygen in Semiconductor Silicon by Gas Fusion Analysis GFA - Historical and Future Trends - S. Pahlke and L. Fabry (Wacker Siltronic AG) |
| 14:40 | 726 |
High Sensitivity Measurement of Nitrogen in Czochralski Silicon - M. Porrini, R. Scala, and V.V. Voronkov (MEMC Electronic Materials) |
| 15:00 | 727 |
Hydrogen Contamination and Defect Generation in p-type Silicon and Silicon-Germanium Schottky Barrier Test Structures - F. Volpi, A.R. Peaker (University of Manchester), I. Berbezier, and A. Ronda (CRMC2-CNRS) |
| 15:20 | 728 |
The Use of the TEM as a Nanoscale Laboratory for Point Defect Creation and Agglomeration in Silicon - N. Stoddard, G. Duscher, A. Kvit, and G. Rozgonyi (North Carolina State University) |
| 15:40 | |
Twenty-Minute Intermission |
| 16:00 | 729 |
The Application of Synchrotron Radiation to Semiconductor Materials Characterisation - R. Barrett (European Synchrotron Radiation Facility) |
| 16:30 | 730 |
Ultra-Trace Analysis of Light Elements and Speciation of Minute Organic Contaminants on Silicon Wafer Surfaces by Means of TXRF in Combination with NEXAFS - B. Beckhoff, R. Fliegauf, G. Ulm, J. Weser (Physikalisch-Technische Bundesanstalt), G. Pepponi, C. Streli, P. Wobrauschek (Atominstitut der Oesterreichischen Universitaeten), T. Ehmann, L. Fabry, C. Mantler, S. Pahlke (Wacker Siltronic AG), B. Kanngiesser, and W. Malzer (Institut fuer Atomare Physik und Fachdidaktik) |
| 16:50 | 731 |
Characterization of Trace Organic Contamination on Silicon Surfaces in Semiconductor Manufacturing - K. Saga and T. Hattori (Sony Corporation) |
| 17:20 | 732 |
Characterization of Advanced Semiconductor Materials by Thermal Desorption Mass Spectrometry with Atmospheric Pressure Ionization - L. Carbonell, G. Vereecke, C. Jehoul, M. Gallagher, D. Gronbeck, S. Van Elshocht, M. Caymax, K. Maex, and P. Mertens (IMEC) |
| 17:40 | 733 |
Analysis of Trace VOCS' in Clean Room Air with PDMS/Carboxen SPME Fibers - V. Teetaert (CRCD), L. Tuduri, V. Desauziers (EMA), and M. Camenzind (Balazs Analytical Services) |
Tuesday, April 29, 2003
Thin Films
Co-Chairs: F. Tardif and P. Stallhofer
| Time | Abs# | Title |
|---|
| 8:00 | 734 |
Stress Management in IC Manufacturing: µ-Raman Spectroscopy Re-visited - L.F.T. Kwakman, D. Delille (Philips Semiconductors Crolles), G. Lucazeau, M. Mermoux, A. Crisci, and G. Lucazeau (LEPMI/ENSEEG) |
| 8:30 | 735 |
Characterization and Metrology of Novel Materials Involved in Advanced CMOS Processes - C. Wyon (STMicroelectronics) |
| 9:00 | 736 |
Physical Characterization of Thin HfO_2 Layers by the Combined Analysis with Complimentary Techniques - H. Bender, T. Conard, O. Richard, B. Brijs, J. Petry, W. Vandervorst (IMEC), C. Defranoux (SOPRA), N. Rochat, C. Wyon (CEA-LETI), P. Mack, J. Wolstenholme (Thermo VG Scientific), R. Vitchev, L. Houssiau, J. Pireaux (FUNDP), A. Bergmaier, and G. Dollinger (TUM) |
| 9:20 | 737 |
Analytical Characterization of Process Parameter Influence on the Initial Growth and Crystallinity of Atomic Layer Deposition HfO_2 Thin Film - D. Blin (ASM France), N. Rochat, G. Rolland, P. Holliger, F. Martin, J.-F. Damlencourt, T. Lardin (CEA - LETI), P. Besson (ST Microelectronics), S. Haukka (ASM Microchemistry), and M.-N. Semeria (CEA - LETI) |
| 9;40 | |
Twenty-Minute Intermission |
| 10:00 | 738 |
Application of XRF Spectrometry in Characterization of High-k Ultra-Thin Films - C. zhao, B. Brijs (IMEC), W. Besling (Philips Semiconductors Crolles), J. Maes (ASM Belgium), S. De Gendt, M. Caymax, and M. Heyns (IMEC) |
| 10:20 | 739 |
High-Resolution Analysis of the Hf02-SiO2 Interface by Soft X-Ray Photoelectron Spectroscopy - O. Renault (CEA-Grenoble), N.T. Barrett (CEa-Saclay), D. Samour, J.F. Damlencourt (CEA-Grenoble), D. Blin (ASM France), F. Martin, and S. Marthon (CEA-Grenoble) |
| 10:40 | 740 |
Optical Characterization of High-k Materials Deposited by ALCVD - E. Bellandi, B. Crivelli, A. Elbaz, M. Alessandri (STMicroelectronics), P. Boher, and C. Defranoux (SOPRA S.A.) |
| 11:00 | 741 |
Scanning Probe Microscopy Methods for Semiconductor Inspection - S. Grafstrom and L.M. Eng (University of Technology Dresden) |
| 11:30 | 742 |
Charging Effects on Ferroelectric SBT Thin Films Imaged by Noncontact Electrostatic Force Microscopy - N. Junghans and B.O. Kolbesen (Johann Wolfgang Goethe-University Frankfurt) |
| 11:50 | 743 |
Two Dimensional Carrier Profiling Using Scanning Capacitance Microscopy - N. Duhayon, D. Alvarez, P. Eyben, M. Fouchier, M. Xu, T. Clarysse, W. Vandervorst (IMEC VZW), and L. Hellemans (K.U.Leuven) |
Non-destructive and Optical Methods
Co-Chairs: H. Bender and C. Claeys
| Time | Abs# | Title |
|---|
| 13:40 | 744 |
Infra Red Spectroscopic Ellipsometry, Instrumentation, and Semiconductor Applications - J.-L. Stehle (SOPRA S.A.) |
| 14:10 | 745 |
Infra Red Spectroscopic Ellipsometry for Semiconductor Applications : A New Metrology Tool for 300 Silicon Wafer Technology - P. Boher, J.L. Stehle, M. Bucchia, and C. Defranoux (SOPRA) |
| 14:30 | 746 |
Macroscopic and Microscopic Photoluminescence Mapping System Applicable to 300 mm Wafers - M. Tajima, Z. Li (Institute of Space and Astronautical Science), and R. Shimidzu (Photon Design Co., Ltd.) |
| 14:50 | 747 |
In-line and Nondestructive Analysis of Epitaxial Si1-x-yGexCy by Spectroscopic Ellipsometry and Comparison with Other Established Techniques - R. Loo (IMEC), P. Meunier-Beillard (Philips Research Leuven), R. Delhounge (IMEC), T. Koumoto (Sony Corporation Semiconductor Network Company), L. Geenen, and B. Brijs (IMEC) |
| 15:10 | 748 |
Characterisation of Bulk and Surface Properties in Semiconductors Using Non-Contacting Techniques - A. Castaldini, D. Cavalcoli, A. Cavallini, and M. Rossi (University of Bologna) |
| 15:30 | |
Twenty-Minute Intermission |
| 15:50 | 749 |
Focused Ion Beam Analysis of Cu/Low-k Metallization Structures - H. Bender (IMEC) |
| 16:20 | 750 |
Detection and Classification of Post-CMP Defects With a Laser Surface Scanning System - D. Lodi (STMicroelectronics), G. Lorenzi (KLA-Tencor Italy), M. Renis, and G. Spinolo (STMicroelectronics) |
| 16:40 | 751 |
Characterization and Mechanism of Device Failure due to Hollow Via Formation - C. Hatcher, R. Lappan, J. Prasad, and M. Engle (AMI Semiconductor, Inc.) |
| 17:00 | 752 |
A Technique for Void Detection using Electron-Beam-Based Wafer Inspection - M. Matsui, C. Zhaohui, and K. Torii (Hitachi Ltd.) |
| 17:20 | 753 |
ZrO_2 as Dielectric Material for Device Characterization with Scanning Capacitance Microscopy - W. Brezna, S. Harasek (TU Wien), H. Enichlmair (Austria Mikro Systeme International AG), E. Bertagnolli, E. Gornik, and J. Smoliner (TU Wien) |
| 17:40 | 754 |
Potential and Pitfalls of the Diode Characterization Technique for ULSI Devices Analysis - A. Poyai, E. Simoen, and C. Claeys (IMEC) |
Hall Maillot, Level 2, Le Palais des Congres
Technical Exhibit and Tuesday Evening Poster Session
Co-Chairs: B.O. Kolbesen and C.L. Claeys
| Time | Abs# | Title |
|---|
| o | 755 |
DLTS Fill-pulse Effect on the Emission Rate Enhancement in Electron-irradiated Highly Doped P-type InP - R. Darwich and B. Massarani (Atomic Energy Commission of Syria) |
| o | 756 |
TXRF Characterization of Inhomogenous Solids: Influence of Surface Morphology - N. Alov, K. Oskolok (M. V. Lomonosov Moscow State University), A. Wittershagen (SEZ AG), and B. Kolbesen (J. W. Goethe University of Frankfurt am Main) |
| o | 757 |
Analysis of Oxygen Thermal Donor Formation in n-type Cz Silicon - J.M. Rafí, E. Simoen, C. Claeys (IMEC), A. Ulyashin, R. Job, W. Fahrner (University of Hagen), J. Versluys, P. Clauws (University of Ghent), M. Lozano, and F. Campabadal (Institut de Microelectronica de Barcelona) |
| o | 758 |
In-Situ Electrochemical Sensor for Early Detection of Plating Problems in Copper Damascene Process - K. Wikiel and A. Jaworski (Technic, Inc.) |
| o | 759 |
Ag Electrodeposition on n-InP Followed In Situ by Photoluminescence - I. Gérard, C. Mathieu, P. Tran-Van, and A. Etcheberry (Universite de Versailles) |
| o | 760 |
Cleaning Chemistry with Complexing Agents (CA): Direct Concentration Measurement of CAs with HPLC - S. Metzger and B. Kolbesen (Johann Wolfgang Goethe-University) |
| o | 761 |
Complexing Agents (CAs) for Semiconductor Cleaning Chemistries: Characterization of CA Lifetimes by UV/VIS-Spectroscopy - O. Doll and B. Kolbesen (Johann Wolfgang Goethe-University Frankfurt a. Main) |
| o | 762 |
Characterization of Heavy Metal Contamination by Capacitance-Frequency Method - K. Hara, M. Takahashi, H. Yoshida, and S. Kishino (Himeji Institute of Technology) |
| o | 763 |
Study by Spectroellipsometry of the InP Surface Evolution by Cerium Acidic Solution - B. Canava, J. Vigneron, A. Etcheberry (Universite de Versailles St-Quentin-en-Yvelines), M. Stchakovsky, and J.-P. Gaston (Jobin Yvon S.A.S) |
| o | 764 |
SSMS Analysis of Low Carbon Contents in Single Crystalline Silicon - B. Wiedemann, J.D. Meyer (J. W. Goethe-Universitaet), H.C. Alt (FHM - Munich University of Applied Sciences), and H. Riemann (Institute of Crystal Growth) |
| o | 765 |
Characterization of Nano-Laminate Structures Using Grazing Incidence XRD - C. Zhao (IMEC), J.W. Maes (ASM Belgium), G. Roebben (KU Leuven), S. DeGendt, M. Caymax (IMEC), O. Van Der Biest (KU Leuven), and M. Heyns (IMEC) |
| o | 766 |
Spectroscopic Ellipsometry in the VUV Range Applied to the Characterization of ALD HfO2, Al2O3 and HfAlOx Thin Layers for High K Dielectrics - P. Boher, C. Defranoux (SOPRA), and H. Bender (IMEC) |
| o | 767 |
Characterization by Electrochemistry and Chemical Surface Analysis of an Oxide Film on n-InP - N.C. Quach, I. Gerard, N. Simon, and A. Etcheberry (Universite de Versailles) |
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