Co-Chairs: M. Watanabe and R. Russel
Time | Abs# | Title |
---|---|---|
10:00 | 1048 | Application of Electric Current in Growing Silicon Single Crystals - J.H. Wang, J.-I. Im (Korea Institute of Ceramic Engineering and Technology), and K.-H. Lee (Dept. of Applied Chemistry, Dongyang Tech. College) |
10:20 | 1049 | A Kinetic Model for P-type Doping in Silicon Epitaxy by CVD - B. Mehta and M. Tao (NanoFAB Center and Department of Electrical Engineering, University of Texas at Arlington) |
10:40 | 1050 | Polishing of Epitaxially Grown POLY-SOI Substrates by Means of Fixed Abrasive CMP for Bonding Purposes - M. Kulawski, H. Luoto, K. Henttinen (VTT Microelectronics), J. Mäkinen, M. Hokkanen (Okmetic Oy), F. Weimar (3M Europe), and F.T. Gobena (3M) |
11:00 | 1051 | A Method for Reducing Surface Roughness During the Thermal Desorption of Silicon - J. Zheng (FAMU-FSU College of Engineering) |
Co-Chairs: C. Claeys and R. Falster
Time | Abs# | Title |
---|---|---|
14:00 | 1052 | Impurity Locking of Dislocations in Silicon - A. Giannattasio, J.D. Murphy, S. Senkader (University of Oxford), R.J. Falster (MEMC Electronic Materials SpA), and P.R. Wilshaw (University of Oxford) |
14:30 | 1053 | On the Influence of Nitrogen and Carbon on the Formation of Dislocations in Heavily Doped Silicon Wafers - R. Winkler (Infineon Technologies AG), R. Krautbauer (Siltronic AG), and R. Pech (Wacker-Chemie GmbH) |
14:50 | 1054 | Improvement in the SIMS Measurement of Bulk Nitrogen in Silicon - B.-S. Park, L. Wang, and R. Hockett (Charles Evans & Associates) |
15:10 | 1055 | Standardization of Nitrogen Analysis in CZ-Si by Charged Particle Activation Analysis - K. Masumoto (High Energy Accelerator Research Organization), T. Nozaki (Purex Co.), H. Yagi (Sumitomo Heavy Industry Examination and Inspection), Y. Minai (Musashi University), Y. Saito, S. Futatsugawa (Japan Radioisotope Association), and N. Inoue (Osaka Prefecture University) |
15:30 | Twenty-Minute Intermission | |
15:50 | 1056 | Formation and control of defects in nitrogen doped silicon crystals - A. Huber, U. Lambert, and W. von Ammon (Siltronic AG) |
16:20 | 1057 | Nitrogen in Silicon: Properties and Impact on Grown-in Microdefects - V. Voronkov and R. Falster (MEMC Electronic Materials) |
16:50 | 1058 | Measurement of nitrogen concentration in CZ-Si below 10^14/cm^3 by IR absorption spectroscopy - M. Nakatsu, A. Natsume, A. Hashimoto, N. Inoue (RIAST, Osaka Prefecture University), and H. Ono (Japan Fine Ceramics Cener) |
17:10 | 1059 | Nitrogen in Thin Silicon Wafers Determined by Infrared Spectroscopy - V. Akhmetov (IHP/BTU Joint Lab), O. Lysytskiy (BTU), and H. Richter (IHP,) |
17:30 | 1060 | FTIR Measurement of Nitrogen in Silicon Using Shuttle Type Sample Stage - M. Watanabe and N. Takenawa (Accent Optical Technologies) |
Co-Chairs: A. Huber and F. Gonzalez
Time | Abs# | Title |
---|---|---|
08:30 | 1061 | Detection of Iron Contamination in Internally Gettered P-type Silicon Wafer by Lifetime Measurements - A. Haarahiltunen, H. Väinölä, M. Yli-Koski, S. Eero, and J. Sinkkonen (Helsinki University of Technology) |
08:50 | 1062 | Pairing Reactions between Substitutional and Interstitial Defects Caused by the Same Transition Metal in Silicon Float Zone Crystals - H. Lemke (Technische Universitaet Berlin) and K. Irmscher (Institut für Kristallzuechtung) |
09:10 | 1063 | Enhancement of Internal Gettering Efficiency of Iron by Low Temperature Nucleation - H. Savin, A. Haarahiltunen, E. Saarnilehto, M. Yli-Koski, J. Sinkkonen (Helsinki University of Technology), and O. Anttila (Okmetic Inc.) |
09:30 | 1064 | Accurate Modeling of Copper Precipitation Kinetics Including Fermi Level Dependence - H.-W. Guo and S. Dunham (University of Washington) |
09:50 | 1065 | Modeling of Internal Gettering for Metal Impurities by Oxide Precipitates in CZ-Si Wafers - K. Sueoka (Okayama Prefectural University) |
10:10 | Twenty-Minute Intermission | |
10:30 | 1066 | Thresholds for Effective Internal Gettering in Silicon Wafers - R. Falster, V. Voronkov (MEMC SpA), V. Resnik, and M. Milvidskii (Institiute of Rare Metals) |
10:50 | 1067 | He- induced nanocavities for the gettering of metallic impurities in silicon - E. Ntsoenzok, R. Delamare (CERI-CNRS), D. Alquier (LMP), C. Liu (CERI-CNRS), and S. Ashok (Pennsylvania State University) |
11:10 | 1068 | Trapping Mechanisms by Cavities for Metallic Impurities in Monocristalline Silicon - G. Regula, R. El Bouayadi, M. Lancin, B. Pichaud (Paul Cézanne), and E. Ntsoenzok (CERI-CNRS) |
11:30 | 1069 | Experimental Study and Simulation of Stress-Induced Cavities in Silicon - K. Loiko, I. Peidous (Dallas Semiconductor), and W. Frensley (University of Texas at Dallas) |
11:50 | 1070 | Defect engineering and control in nanocrystalline silicon - D. Milovzorov (The Institute of Physics & Technology of RAS) |
Co-Chair: V. Voronkov
Time | Abs# | Title |
---|---|---|
14:00 | 1071 | Formation mechanism of voids and oxide precipitates in silicon crystals - K. Nakamura, T. Saishoji, and J. Tomioka (Komatsu Electric Metals Co. Ltd.) |
14:30 | 1072 | Simplified Two-Dimensional Quantification of the Microdefect Distributions in Silicon Crystals Grown by Czochralski Process - M. Kulkarni and V. Voronkov (MEMC Electronic Materials) |
14:50 | 1073 | Oxygen-related donors in Germanium doped Czochralski Silicon - D. Yang, H. Li, X. Ma, X. Yue, D. Tian, L. Li, and D. Que (Zhejiangm University) |
15:10 | 1074 | Long-Time Relaxation of Silicon Resistivity after Annihilation of Thermal Donors - G. Voronkova, A. Batunina (Institute of Rare Metals), V. Voronkov, R. Falster, and M. Porrini (MEMC Electronic Materials) |
15:30 | 1075 | Oxygen Precipitation and Thermal Donor Formation in Pb and C Doped n-Type Czochralski Silicon. - V. Neimash, M. Kras'ko, A. Kraitchinskii, V. Voytovych (Institute of Physics NANU), O. Kabaldin, V. Tsmots (Laboratoty of Microelectronic Materials), E. Simoen, and C. Claeys (IMEC) |
15:50 | Twenty-Minute Intermission |
Co-Chair: H. Huff
Time | Abs# | Title |
---|---|---|
15:50 | Twenty-Minute Intermission | |
16:10 | 1076 | Impact of Lanthanide Contamination on ULSI CMOS - W. Taylor, Jr., L. Lovejoy, P. Tobin, Z.-X. Jiang, J. Lerma, J.-Y. Nguyen, and R. Garcia (Freescale Semiconductor) |
16:30 | 1077 | Impact of STI width and spacing on the stress generation in deep submicron CMOS - A. Poyai, I. Rittaporn (TMEC), E. Simoen, C. Claeys, and R. Rooyackers (IMEC) |
16:50 | 1078 | Dielectric Degradation of Gate SiO2 Films by Cu Contamination Posterior to MOS Capacitor Fabrication - T. Onizawa, K. Higuchi, N. Tokuda, R. Hasunuma, and K. Yamabe (University of Tsukuba) |
Co-Chairs: K. Sueoka and P. Wilshaw
Time | Abs# | Title |
---|---|---|
08:20 | 1079 | Trace Metal Contamination Analysis of the Bevel and Edge Exclusion Area on Starting Silicon - C. Sparks and M. Beebe (International SEMATECH) |
08:40 | 1080 | Effective Lifetime of Minority Carriers in Silicon: the Role of Heat- and Hydrogen Plasma Treatments - A. Ulyashin (University of Oslo, Dept of Physics, Center for Material Science and Nanotechnology), E. Simoen, L. Carnel, S. De Wolf, H. Dekkers, and G. Beaucarne (IMEC) |
09:00 | 1081 | Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs - J.A. Martino (University of São Paulo and FEI University), J.M. Rafí, A. Mercha, E. Simoen, and C. Claeys (IMEC) |
09:20 | 1082 | Nanoscopic Characterization of Silicon Surfaces Using Tunneling AFM - N. Kubo, M. Naka, T. Homma, and T. Osaka (Department of Applied Chemistry. Waseda University) |
09:40 | 1083 | Single Spin Etching Behavior Analysis by Quality Engineering (Taguchi Method) - S. Itoh, M. Takano, Y. Kozuki, M. Watanabe (SEZ Japan Inc.), R. Matsumoto (Oki Electric Industry Co. Ltd.), and H. Kruwinus (SEZ AG) |
10:00 | Twenty-Minute Intermission |
Co-Chairs: C. Claeys and J. Lutz
Time | Abs# | Title |
---|---|---|
10:20 | 1084 | Radiation-induced Defects in Silicon - R. Siemieniec (Technical University of Ilmenau), F.-J. Niedernostheide, H.-J. Schulze (Infineon Technologies AG), W. Suedkamp (Aktiv Sensors GmbH), U. Kellner-Werdehausen (eupec GmbH), and J. Lutz (Technical University of Chemnitz) |
10:50 | 1085 | Thermal Evolution of Hydrogen Related Defects in Silicon Investigated by µ-Raman Spectroscopy - Y. Ma, Y. Huang, R. Job, and W. Fahrner (University of Hagen) |
11:10 | 1086 | Radiation-Induced Deep Levels in Pb- and Sn-Doped n-Type Czochralski Silicon - M.-L. David, E. Simoen, C. Claeys (IMEC), V. Neimash, M. Kras'ko, A. Kraitchinskii, V. Voitovich, V. Tishchenko (Institute if Physics NANU), and J.F. Barbot (Laboratoire de Metallurgie Physique) |
11:30 | 1087 | Morphology and Stress Investigations of Surface and Subsurface Regions of Plasma Hydrogenated and Annealed Czochralski Silicon - R. Job and Y. Ma (University of Hagen) |
11:50 | 1088 | Characterization of hydrogen diffusion by hydrogen enhanced formation of thermal donors in p-type Czochralski silicon at temperatures between 350 and 450 °C - Y. Huang, Y. Ma, R. Job, and W. Fahrner (University of Hagen) |