Co-Chairs: C. Claeys, M. Deen, and M. Kubota
Time | Abs# | Title |
---|---|---|
o | 834 | Thin Films of GeC Deposited Using a Unique Hollow Cathode Sputtering Technique - R. Soukup, N. Ianno (University of Nebraska), and V. Dalal (Iowa State University) |
o | 835 | SOFC-Type Microreactors that Generate Hydrogen for PEFC Applications - A. Tomita, D. Hirabayashi (National Institute of Advanced Industrial Science and Technology (AIST)), M. Nagao, M. Sano, and T. Hibino (Nagoya University) |
o | 836 | Investigation into the Electrical and Thermal Properties of Strained Si pMOSFETs - G. Nicholas, T. Grasby, E. Parker, and T. Whall (University of Warwick) |
o | 837 | Strained Gate Dielectric - T. Ikuta, S. Pidin, T. Sakuma (Fujitsu Ltd.), S. Doi (Fujitsu Laboratories Ltd.), N. Tamura (Fujitsu Ltd.), N. Awaji (Fujitsu Laboratories Ltd.), M. Kase, and T. Sugii (Fujitsu Ltd.) |
o | 838 | Preparation of Proton Exchange Membranes and Lithium Batteries from Melamine-Containing Ormosils - D. Tigelaar, J. Kinder, M.A. Meador, J. Waldecker, and W. Bennett (NASA Glenn Research Center) |
o | 839 | Photosensitive-Polymer Insulators for Organic Thin-Film Transistors - G.H. Kim, S.-M. Yoon, I.-K. Ryu, S.Y. Kang, and K.S. Seo (Elecronics and Telecommunications Research Institute (Basic Res. Lab.)) |
o | 840 | Fabrication of YSZ Thin Film on Samaria Doped Ceria Substrate by CVI Method - F. Tamazaki, K. Kikuchi (University of Shiga Prefecture), and Z. Ogumi (Kyoto University) |
o | 841 | Flexible Low Temp Gate Insulators For Organic Field Effect Transistors - I.-K. You, S.Y. Kang, G.H. Kim, S.D. Ahn, K.-H. Baek, and K.S. Suh (Electronics and Telecommunications Research Institute) |
o | 842 | Terahertz absorption by magnetoplasma sound wave excitation in semiconductor heterostructures - C. Zhang, S.H. Pilehrood, and R. Lewis (University of Wollongong) |
o | 843 | Characterization of porous silicon nitride formed by plasma-enhanced chemical vapor deposition - T. Kakite, M. Wake, and S. Yokoyama (Research Center for Nanodevices and Systems, HIroshima University) |
o | 844 | Specific Contact Resistance Extraction of Metal-Semiconductor Contact for Power Integrated Circuits - S. Oussalah and B. Djezzar (CDTA) |
o | 845 | Dual High-k Gate Oxide Characteristics of Al_2O3 films on Si (100) Substrate - C. Lee, S.Y. No, D.I. Eom, C.S. Hwang, and H.J. Kim (Seoul National University) |
o | 846 | Effects of deposition temperatures and alternating cyclic pulses of W(N-t-Bu)2(NmeEt)2 and ammonia on the properties of WN films - D.-H. Kim, E.-J. Kim, and H. Woo (Chonnam National University) |
o | 847 | Nanocomposites of multiferroic relaxor lead iron tantalate-lead iron tantalalum niobate - S. Majumder, R. Vadapoo, S. Bhattacharyya, and R. Katiyar (University of Puerto Rico) |
o | 848 | Development of a Novel Method Removal by Ozone with Acetic Acid Vapor - S. Noda, K. Kawase, H. Horibe, M. Kuzomoto (Mitsubishi Electric Corp.), and T. Kataoka (SPC Electronics Corp) |
o | 849 | The Saw-damage-induced structural defects on the surface of silicon crystals - Y. Kim and J. Kim (University of Incheon) |
o | 850 | Mass Flow controller installation on advanced wet-bench model: benefits and developments - M. Strada and G. Fazio (STMicroelectronics central R&D department R2) |