203rd Meeting - Paris, France

April 27-May 2, 2003

PROGRAM INFORMATION

F1 - Science and Technology of Dielectrics in Emerging Fields

Dielectric Science and Technology/Electronics

Monday, April 28, 2003

Room 353, Level 3, Le Palais des Congres

Biosystems and Microsystems

Co-Chairs: D. Misra and K. Worhoff

Time	Abs#	Title
10:00		Introductory Remarks
10:05	350	Ion Track Nanostructuring of Dielectrics - K. Hjort (Uppsala University), E. Balanzat (Centre Interdisciplinaire de Recherche Ions Lasers), E. Ferain, R. Legras (Universite Catholique de Louvain), C. Trautmann (GSI), M. Toulemonde (Centre Interdisciplinaire de Recherche Ions Lasers), and A. Weidinger (Hahn-Meitner-Institut Berlin)
10:20	351	Design, Integration and Performance Evaluation of Optical Detection Elements for Miniaturized Biochemical Devices - K.B. Mogensen, A.M. Jorgensen, N.J. Petersen, O. Geschke, and J.P. Kutter (Technical University of Denmark)
10:40	352	Silicon-Based Field-Effect Structures - From Dielectrics to Bioelectronics - M.J. Schoening (University of Applied Sciences Aachen)
11:00	353	Neurotransistors for Biomedical Technology - V.J. Kapoor (The University of Toledo)
11:20	354	Biosensors Based On Standard Dielectric Materials - J. Bausells (Centro Nacional de Microelectronica), A. Errachid (Parc Cientific de Barcelona), and N. Zine (Centro Nacional de Microelectronica)
11:40	355	Barrier Films on Paper and Cellulose using Fluorocarbon Plasmas - S. Vaswani (Georgia Institute of Technology), J. Koskinen (Institute of Paper Science and Technology), S. Zauscher (Duke University), and D. Hess (Georgia Institute of Technology)
12:00	356	Controlled Filling of Silicon Trenches with Doped Oxide for MEMS - A. Agarwal and R. N. (Institute of Microelectronics)

Integrated Optics and Optical Applications

Co-Chairs: P. Mascher and D. Poitras

Time	Abs#	Title
13:30	357	Photonic Crystal and Photonic Wire Technologies and Devices - R.M. De La Rue, N. Johnson, B. Treble, C. Jin, A.S. Jugessur, I. Ntakis, E. Camargo, H. Chong, P. Pottier (The University of Glasgow), D.W. McComb, and M. McLachlan (University of Glasgow)
13:50	358	Optical and Electronic Properties of Nanoscale Si/SiO_2 Superlattices - D.J. Lockwood (National Research Council)
14:10	359	MOCVD-Deposited Dielectric Films for Integrated Optical and Microelectronic Circuits - J. Mueller (Technical University Hamburg- Harburg)
14:30	360	Optical Characaterization of LPCVD SiOxNy Thin Films - M. Modreanu (National Microelectronics Research Centre (NMRC)), M. Gartner (Institute of Physical Chemistry), and N. Tomozeiu (Utrecht University)
14:50	361	Material Consideration for Integrated Optics in Silica-on-Silicon Technology - L. Wosinski, M. Dainese, and H. Fernando (Royal Institute of Technology)
15:10		Ten-Minute Intermission

Integrated Optics and Optical Applications (cont'd)

Co-Chairs: R.M. De La Rue and D.J. Lockwood

Time	Abs#	Title
15:20	362	Nanoscale Characterization and Local Electromechanical Properties of Ferroelectric Films for MEMS - A. Kholkin, V. Shvartsman, A. Emelyanov (University of Aveiro), and A. Safari (Rutgers University)
15:40	363	Optical MEMS Devices Based on Wet Anisotropic Etching of Silicon - M. Hoffmann, D. Nuesse, and E. Voges (Universitaet Dortmund)
16:00	364	Progress in the Fabrication of Complex Optical Coatings - D. Poitras (National Research Council of Canada)
16:20	365	Silicon Nitride Coatings for Si Solar Cells: Control of Optical Reflection and Surface/Bulk Passivation - B. Sopori (National Renewable Energy Laboratory)

Materials Processing

Co-Chairs: A. Kholkin and B. Sopori

Time	Abs#	Title
16:40	366	Temporal Pulse Shaping and Optimization in Ultrafast Laser Ablation of Materials - R. Stoian, S. Winkler, M. Hildebrand, M. Boyle, A. Thoss, A. Rosenfeld, and I.V. Hertel (Max-Born Institut fur Nichtlineare Optik und Kurzzeitspektroskopie)
17:00	367	Development and Characterization of KOH Resistant PECVD Silicon Nitride for Microsystems Applications - F.E. Rasmussen, B. Geilman, M. Heschel, O. Hansen, and A.M. Jorgensen (Technical University of Denmark)
17:15	368	The Influence of Grain Boundary Impedances on the Electrical Properties of CaCu3Ti4O12 Ceramics - D. Sinclair, T. Adams, and A. West (University of Sheffield)
17:35	369	Ferroelectric Properties of Pb-Excess PZT Thin Films Prepared by Zirconium Oxyacetate-Based Sol-Gel Process - K. Nakano, G. Sakai, K. Sakai, and N. Yamazoe (Kyushu University)

Tuesday, April 29, 2003

Progress in Electronics

Co-Chairs: M.W. Cole and L. Tsybeskov

Time	Abs#	Title
8:00	370	Nanocrystalline Silicon Superlattices: Novel Structures for Electron Device Applications - L. Tsybeskov (New Jersey Institute of Technology)
8:20	371	Growth of GaN Nanorods with Low Carrier Concentration - T.W. Kang and H.-M. Kim (Dongguk University)
8:40	372	New Trends in Silicon Thin Films and Applications - J.-P. Kleider (SUPELEC), P. Roca i Cabarrocas (Ecole Polytechnique), and C. Guedj (CEA-Grenoble)
9:00	373	Novel Dielectric Thin Films for Frequency Agile Microwave Devices - M.W. Cole, W. Nothwang, C. Hubbard, E. Ngo, M. Ervin, M. Wood (U.S. Army research Laboratory), and R.G. Geyer (National Institute of Standards and Technology)
9:20	374	Materials Challenges for Ultrathin Gate Dielectrics for CMOS and Other Applications - S. Guha, V. Narayanan, N.A. Bojarczuk, and E. Gousev (IBM)
9:40	375	Material Aspects in Emerging Nonvolatile Memories - T. Mikolajick (Infineon Technologies Dresden)
10:00	376	Investigation of RU Thin Films Prepared by Chemical Vapor Deposition as Bottom Electrodes for Memory Applications - S.Y. Kang, H.J. Lim, C.S. Hwang, and H.J. Kim (Seoul National University)
10:15		Ten-Minute Intermission

Low-K and High-K Dielectrics

Co-Chairs: S. Guha and A. Grill

Time	Abs#	Title
10:25	377	Characterization of Low-k to Extreme Low-k SiCOH Dielectrics - A. Grill (IBM)
10:45	378	Challenges for the Application of High-k Gate Dielectrics in Future CMOS Technologies - E. Cartier (IBM Research Division)
11:05	379	High-throughput Screening of Binary and Ternary Dielectric Oxides by Combinatorial Technology - H. Koinuma (Tokyo Institute of Technology)
11:25	380	Progress in Novel Oxides for Gate Dielectrics And Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors - C.R. Abernathy, B.P. Gila, A.H. Onstine, S.J. Pearton, J. Kim, B. Luo, R. Mehandru, F. Ren (University of Florida), J.K. Gillespie, R.C. Fitch, J. Sewell, R. Dettmer, G.D. Via, A. Crespo, T.J. Jenkins (Air Force Research Laboratory), and Y. Irokawa (Toyota Central Research and Development Laboratories, Inc.)
11:45	381	Atomic Layer Deposition of High-K Dielectrics for Metal-Oxide-Semiconductor Devices - Y.-S. Lin, R. Puthenkovilakam, and J. Chang (UCLA)
12:00	382	Investigation of Slow/Fast Interface States of Al2O3/Si MOS system using Deep Level Transient Spectroscopy - I.S. Jeon, D. Eom, M. Cho, H.B. Park, J. Park, and C.S. Hwang (Seoul National University)
12:15	383	Influence of the 5 A TaNx Interface Layer on Doped Metal Oxide High-k Dielectric Characteristics - Y. Kuo and J. Lu (Texas A and M University)
12:30	384	Research Of HfO_2 Film Deposited On SOI Substrate - K. Tao (Chinese Academy of Science)
12:45	385	Characterization of a Potential Gate Dielectric: MOCVD-grown Erbium Oxide on Silicon - M.P. Singh, C.S. Thakur, N. Bhat, and S.A. Shivashankar (Indian Institute of Science)

Hall Maillot, Level 2, Le Palais des Congres

Technical Exhibit and Tuesday Evening Poster Session

Co-Chairs: K. Worhoff and P. Mascher

Time	Abs#	Title
o	386	Conduction Mechanisms in Fluorocarbon Thin Films - A. Sylvestre and P. Gonon (LEMD-CNRS)
o	387	Potential Fluctuations in High-k Based Dielectric MOS Devices - J.-L. Autran, D. Munteanu, and M. Houssa (UMR CNRS 6137)
o	388	Characterization of Thermally Evaporated ZrO2 - M. Bhaskaran, P. Swain (Sarnoff Corporation), and D. Misra (New Jersey Institute of Technology)
o	389	Synthesis and Characterization of Zinc Titanate Doped with Magnesium - Y.S. Chang, Y.H. Chang, I.G. Chen (National Cheng Kung University), and G.J. Chen (I-Shou University)
o	390	Investigation of High Dielectric Film on the Plastic Substrate by Novel Liquid-Phase Heterojunction - C.J. Huang, W.R. Chen, P.H. Chiu, C.Z. Chen, M.S. Lin, S.L. Lee, and Z.Y. Lin (Southern Taiwan University of Technology)
o	391	Thickness and Temperature Dependence of the AC Electrical Conductivity of Porous Silicon Thin Films - M. Theodoropoulou, S.N. Georgia, C.A. Krontiras, N. Xanthopoulos, M.N. Pisanias (University of Patras), C. Tsamis, and A.G. Nassiopoulou (IMEL/NCSR Demokritos)