203rd Meeting - Paris, France
April 27-May 2, 2003
PROGRAM INFORMATION
M1 - The Seventh International Symposium on Semiconductor Wafer Bonding Science, Technology, and Applications
Electronics/Sensor
Tuesday, April 29, 2003
Room 243, Level 2, Le Palais des Congres
Wafer Bonding for SOI Applications
Co-Chairs: H. Baumgart and M. Reiche
Time | Abs# | Title |
13:40 | 993 |
Thin Film Transfer by Smart Cut Technology beyond SOI - C. Mazure (SOITEC) |
14:10 | 994 |
Characterization of SOI Wafers by Photoluminescence Spectroscopy, Decay and Micro/Macro-Mapping - M. Tajima (Institute of Space and Astronautical Science) |
14:40 | 995 |
Evaluation of Commercial Ultra-thin SOI Substrates using Confocal Laser Inspection System - A. Ogura (NEC Corporation) and O. Okabayashi (Lasertech Corporation) |
15:00 | 996 |
Effect of Silicon Nitride and Silicon Dioxide Bonding on the Residual Stress in Layer-Transferred SOI - A. Tiberj, J. Camassel, N. Planes (Universite Montpellier II), Y. Stoemenos (Aristotle University of Thessaloniki), H. Moriceau, and O. Rayssac (CEA Grenoble) |
15:20 | 997 |
Fabrication of Sub-micron Active Layer SSOI Substrates using Ion Splitting and Wafer Bonding Technologies - F. Ruddell, M. Bain, S. Suder, R. Hurley, M. Armstrong, V. Fusco, and H. Gamble (Queen's University Belfast) |
15:40 | |
Twenty-Minute Intermission |
16:00 | 998 |
Splittablity in Double Porous Si Layers for ELTRAN® - K. Sakaguchi, T. Tsuboi, K. Yanagita, T. Okabe, K. Takahashi, and N. Sato (Canon Inc.) |
16:20 | 999 |
Study of Dislocations and Stress in Silicon-On-Insulator Tubs using Transmission Electron Microscopy and Finite Element Modelling - A.J. McMullan (Queens University Belfast), D. O'Mahoney (University College Cork), W.A. Nevin (Analog Devices Belfast Limited), J.M. Gregg, and A.T. Paxton (Queens University Belfast) |
16:40 | 1000 |
The Bonding Energy Control : An Original Way to Obtain “Debondable Substrates” - H. Moriceau (CEA-DRT), O. Rayssac (SOITEC), B. Aspar (TRACIT), and B. Ghyselen (SOITEC) |
17:00 | 1001 |
Breakdown Characteristics of a High-Voltage Lateral PMOS with LOCOS Gate on SOI - H. Sumida and A. Hirabayashi (Fuji Electric Co., Ltd.) |
17:20 | 1002 |
Fully Integrated Plasma-Activated Bonding (PAB) for High Volume SOI Substrate Manufacturing Process - I.J. Malik, S. Kang, J. Sullivan, M. Fuerfanger, P.J. Ong, and F.J. Henley (Silicon Genesis Corporation) |
17:40 | 1003 |
Manufacture Processes for GPSOI Substrates and Their Influence on Cross-Talk Suppression - H. Gamble, B. Armstrong, D. McNeill, P. Baine, M. Bain (Northern Ireland Semiconductor Research Centre), J. Hamel (University of Waterloo), and M. Kraft (University of Southampton) |
Wednesday, April 30, 2003
Low Temperature Wafer Bonding for Materials and Device Fabrication
Co-Chairs: S. Bengtsson and K. Scholjberg-Henriksen
Time | Abs# | Title |
8:00 | 1004 |
Advanced SOI Structures Based on Wafer Bonding : A Short Review - B. Ghyselen (SOITEC) |
8:30 | 1005 |
Plasma Assisted Low Temperature Wafer Bonding - I. Suni, T. Suni, and K. Henttinen (VTT Information Technology) |
9:00 | 1006 |
Interest Of A Short Plasma Treatment To Achieve High Quality Si-SiO2-Si Bonded Structures - H. Moriceau (CEA-DRT), B. Bataillou (SOITEC), C. Morales, A.M. Cartier (CEA-DRT), and F. Rieutord (CEA-DRFMC) |
9:20 | 1007 |
Wafer Bonded Abrupt Junction Tunnel Diodes - R. Esser (American Society of Engineering Education), K. Hobart, and F. Kub (United States Naval Research Laboratory) |
9:40 | |
Thirty-Minute Intermission |
10:10 | 1008 |
Future Trends in SOI Devices - T.R. White, A. Barr, A. Thean, A. Vandooren, L. Mathew, M. Mendicino, G. Yeap, B.-Y. Nguyen, and M. Orlowski (Motorola Digital DNA Laboratories) |
10:40 | 1009 |
Bonded Compliant Substrate for Epitaxy High Brightness Light Emitting Diodes - P.C. Liu and Y.S. Wu (National Chiao Tung University) |
11:00 | 1010 |
Mode Conversion Optical Isolator Fabricated by Wafer Bonding - H. Yokoi, T. Mizumoto, and H. Iwasaki (Tokyo Institute of Technology) |
11:20 | 1011 |
Thin Film Sputtered Silicon For Low Temperature Wafer Bonding Applications - R. Hurley, H. Gamble, S. Suder, and M. Armstrong (Queen's University Belfast) |
11:40 | 1012 |
UV/Ozone Activation Treatment for Wafer Bonding - K. Hobart, F. Kub (Naval Research Laboratory), C. Colinge, and G. Ayele (California State University) |
Bonding for MEMS Applications
Co-Chairs: I. Suni and T. Suga
Time | Abs# | Title |
13:40 | 1013 |
Anodic Bonding and the Intergration with Electronics - K. Schjolberg-Henriksen, A. Hanneborg (University of Oslo), and G. Uri Jensen (SINTEF Electronics and Cybernetics) |
14:10 | 1014 |
Silicon-Based Flexible Electronics - M. Reiche (Max-Planck Institut fur Mikrostructurphysik) |
14:40 | 1015 |
Fabrication and Characterization of Multi-layered SOI for MEMS Applications - K. Somasundram, D. Cole, C. McNamara, A. Boyle, P. McCann, C. Devine, and A. Nevin (Analog Devices Belfast Ltd.) |
15:00 | 1016 |
Bonding and Contacting of MEMS-Structures on Wafer Level - J. Froemel, T. Gessner, C. Jia, and M. Wiemer (Fraunhofer Institute) |
15:20 | 1017 |
Development of an UHV Wafer Scale Surface Activated Bonding Machine for MEMS Packaging - M. Howlader, H. Okada, T. Itoh, and T. Suga (The University of Tokyo) |
15:40 | |
Twenty-Minute Intermission |
Exfolation Techniques
Co-Chairs: I. Suni and T. Suga
Time | Abs# | Title |
16:00 | 1018 |
Hydrogen and Helium Implantation to Achieve Layer Transfer - C. Lagahe-Blanchard, N. Sousbie, S. Sartori, H. Moriceau, A. Soubie, B. Aspar (CEA / LETI), P. Nguyen, and B. Blondeau (SOITEC) |
16:20 | 1019 |
Low Temperature Si Layer Transfer by Mechnical Ion-Cut - Y. Cho and N. Cheung (University of California, Berkeley) |
16:40 | 1020 |
Mechanical Delamination for the Materials Integration - K. Henttinen, T. Suni, M. Kulawski, and I. Suni (VTT Centre for Microelectronics) |
17:00 | 1021 |
GaAs Layer Splitting By Helium And/Or Hydrogen Implantation - I. Radu, I. Szafraniak, R. Scholz, M. Alexe, and U. Gosele (Max Planck Institute of Microstructure Physics) |
17:20 | 1022 |
Debonding of Directly Wafer-Bonded Silicon After High Temperature Process Steps - J. Bagdahn, H. Knoll, M. Petzold (Fraunhofer Institute for Mechanics of Materials), and M. Wiemer (Fraunhofer Institute for Microintegration and Reliability) |
17:40 | 1023 |
Ultra High Precision Of The Tilt/Twist Misorientation Angles In Silicon/Silicon Direct Wafer Bonding - F. Fournel, H. Moriceau, B. Aspar (CEA-DRT), N. Magnea, J. Eymery, F. Leroy, K. Rousseau, and J.-L. Rouviere (CEA Grenoble) |
Thursday, May 1, 2003
Level 2 Hallway, Le Palais des Congres
Thursday Evening Poster Session
Co-Chairs: C. Hunt and S. Bengtsson
Time | Abs# | Title |
o | 1024 |
On the Effect of Plasma Treatments on Low Temperature Bonding - M. Gabriel (Suss MicroTec), M. Eichler (Fraunhofer IST), and M. Reiche (Max-Planck-Institut fuer Mikrostrukturphysik) |
o | 1025 |
AlGaInP Light-Emitting Diodes with Metal Substrates Fabricated by Wafer Bonding - W.C. Peng and Y.S. Wu (National Chiao Tung University) |
o | 1026 |
Characteristics and Applications of Silicon Direct Bonded Interfaces - P. McCann, C. Devine (Analog Devices Belfast), H. Gamble (Queen's University Belfast), and A. Nevin (Analog Devices Belfast) |
o | 1027 |
Silicon Wafer Bonding for Encapsulating Surface-Micromachined MEMS Using Intermediate Glass Layers - R. Knechtel, J. Heller (X-FAB Semiconductor Foundries AG), M. Wiemer, and J. Fromel (Fraunhofer Institute for Reliability and Microintegration) |
o | 1028 |
Role of Wafer Bow and Etch Patterns in Direct Wafer Bonding - K. Turner and M. Spearing (Massachusetts Institute of Technology) |
o | 1029 |
The Feasibility of Wafer Bonding by Indium Tin Oxide Intermediate Layer for Light Emitting Diodes - P.C. Liu, C.Y. Hou, C.L. Lu, and Y.S. Wu (National Chiao Tung University) |
o | 1030 |
Healing Mechanism of Interfacial Voids in GaAs Wafer Bonding - Y.S. Wu and W.C. Peng (National Chiao Tung University) |
o | 1031 |
Frequency-Dependent Conductance and Capitance of the Semiconductor Homojunction and Evaluation of Interface-States Parameters in p-Si/p-Si Directly Bonded Structures - V. Stuchinsky (Institute of Semiconductor Physics) |
o | 1032 |
Interfacial Tunneling Oxide: Impact on Electrical Characterization of Unipolar Si/Si Bonded Junctions - V. Stuchinsky (Institute of Semiconductor Physics) |
o | 1033 |
Improved Charcacterization Methods for Unipolar Diretly Bonded Semiconductor Junctions - V. Stuchinsky and G. Kamaev (Institute of Semiconductor Physics) |
o | 1034 |
Traps at the Bonded Si/SiO2 Interface in Silicon-on-Insulator Structures - I. Antonova (Institute of Semiconductor Physics), J. Stano (Joint Institute for Nuclear Research), D. Nikolaev, O. Naumova, V. Popov (Institute of Semiconductor Physics), and V. Skuratov (Joint Institute for Nuclear Research) |
o | 1035 |
Effect of Gamma-Irradiation on the the Electrical Properties of Unipolar Directly Bonded p-Si/p-Si Junctions - V. Stuchinsky, G. Kamaev (Institute of Semiconductor Physics), V. Bolotov, and U. Sten'kin (Institute of Sensor Microelectronics) |
o | 1036 |
Nano-Voids at Hydrophilic, Hydrophobic, and UHV Bonded Silicon Interfaces Detected by TEM - A. Reznicek, R. Scholz, S. Senz, and U. Goesele (Max-Planck-Institute of Microstructure Physics) |
o | 1037 |
Characterization of Bonded Interface by HF Etching Method - T. Suni, J. Kiihamäki, K. Henttinen, I. Suni (VTT Centre for Microelectronics), and J. Mäkinen (Okmetic Oyj.) |
o | 1038 |
Triple-Stack Anodic Bonding for MEMS Applications - V. Dragoi, T. Glinsner, P. Hangweier, and P. Lindner (EV Group E. Thallner GmbH) |
o | 1039 |
Pretreatment Effects on Void Formation for Low Temperature Si-Si Bonded Wafers - X.X. Zhang and J.-P. Raskin (Universite Catholique de Louvain) |
o | 1040 |
Wafer-Scale Surface Activated Bonding of Silicon, Silicon Oxide, and Copper at Low Temperature - T.H. Kim, M. Howlader, T. Itoh, and T. Suga (The University of Tokyo) |
o | 1041 |
X-ray Studies of Plasma Assisted Wafer Bonding - M. Poulsen, A. Egebjerg, R. Feidenhans'l (Riso National Laboratory), F. Jensen (DTU), and O. Bunk (Riso National Laboratory) |
o | 1042 |
Sealing of Cavities with Lateral Feed-Throughs by Anodic Bonding - R. Fleron and F. Jensen (Mikroelektronik Centret) |
o | 1043 |
Atomic Structure of Twist Bonded Interfaces: A Molecular Dynamics Study - K. Scheerschmidt and V. Kuhlmann (Max Planck Institute of Microstructure Physics) |
o | 1044 |
Bondability of Plasma Hydrogenated Silicon Wafers - A. Usenko (Silicon Wafer Technologies, Inc.), W. Carr, and B. Chen (New Jersey Institute of Technology) |
o | 1045 |
Dynamics of Wafer Bonding - F. Rieutord (CEA-Grenoble), B. Bataillou (SOITEC), and H. Moriceau (CEA-Grenoble) |
o | 1046 |
Plasma Assisted Low Temperature Wafer Bonding; Void Formation in the Oxide Free Interface - P. Amirfeiz, A. Sanz-Velasco, and S. Bengtsson (Chalmers University of Technology) |
o | 1047 |
Wafer Bonding in 'Strained Silicon': Oppurtunities and Challenges - S. Christiansen and U. Goesele (Max Planck Institute of Microstructure Physics) |
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