203rd Meeting - Paris, France

April 27-May 2, 2003


M1 - The Seventh International Symposium on Semiconductor Wafer Bonding Science, Technology, and Applications


Tuesday, April 29, 2003

Room 243, Level 2, Le Palais des Congres

Wafer Bonding for SOI Applications

Co-Chairs: H. Baumgart and M. Reiche

13:40993 Thin Film Transfer by Smart Cut Technology beyond SOI - C. Mazure (SOITEC)
14:10994 Characterization of SOI Wafers by Photoluminescence Spectroscopy, Decay and Micro/Macro-Mapping - M. Tajima (Institute of Space and Astronautical Science)
14:40995 Evaluation of Commercial Ultra-thin SOI Substrates using Confocal Laser Inspection System - A. Ogura (NEC Corporation) and O. Okabayashi (Lasertech Corporation)
15:00996 Effect of Silicon Nitride and Silicon Dioxide Bonding on the Residual Stress in Layer-Transferred SOI - A. Tiberj, J. Camassel, N. Planes (Universite Montpellier II), Y. Stoemenos (Aristotle University of Thessaloniki), H. Moriceau, and O. Rayssac (CEA Grenoble)
15:20997 Fabrication of Sub-micron Active Layer SSOI Substrates using Ion Splitting and Wafer Bonding Technologies - F. Ruddell, M. Bain, S. Suder, R. Hurley, M. Armstrong, V. Fusco, and H. Gamble (Queen's University Belfast)
15:40 Twenty-Minute Intermission
16:00998 Splittablity in Double Porous Si Layers for ELTRAN® - K. Sakaguchi, T. Tsuboi, K. Yanagita, T. Okabe, K. Takahashi, and N. Sato (Canon Inc.)
16:20999 Study of Dislocations and Stress in Silicon-On-Insulator Tubs using Transmission Electron Microscopy and Finite Element Modelling - A.J. McMullan (Queens University Belfast), D. O'Mahoney (University College Cork), W.A. Nevin (Analog Devices Belfast Limited), J.M. Gregg, and A.T. Paxton (Queens University Belfast)
16:401000 The Bonding Energy Control : An Original Way to Obtain “Debondable Substrates” - H. Moriceau (CEA-DRT), O. Rayssac (SOITEC), B. Aspar (TRACIT), and B. Ghyselen (SOITEC)
17:001001 Breakdown Characteristics of a High-Voltage Lateral PMOS with LOCOS Gate on SOI - H. Sumida and A. Hirabayashi (Fuji Electric Co., Ltd.)
17:201002 Fully Integrated Plasma-Activated Bonding (PAB) for High Volume SOI Substrate Manufacturing Process - I.J. Malik, S. Kang, J. Sullivan, M. Fuerfanger, P.J. Ong, and F.J. Henley (Silicon Genesis Corporation)
17:401003 Manufacture Processes for GPSOI Substrates and Their Influence on Cross-Talk Suppression - H. Gamble, B. Armstrong, D. McNeill, P. Baine, M. Bain (Northern Ireland Semiconductor Research Centre), J. Hamel (University of Waterloo), and M. Kraft (University of Southampton)

Wednesday, April 30, 2003

Low Temperature Wafer Bonding for Materials and Device Fabrication

Co-Chairs: S. Bengtsson and K. Scholjberg-Henriksen

8:001004 Advanced SOI Structures Based on Wafer Bonding : A Short Review - B. Ghyselen (SOITEC)
8:301005 Plasma Assisted Low Temperature Wafer Bonding - I. Suni, T. Suni, and K. Henttinen (VTT Information Technology)
9:001006 Interest Of A Short Plasma Treatment To Achieve High Quality Si-SiO2-Si Bonded Structures - H. Moriceau (CEA-DRT), B. Bataillou (SOITEC), C. Morales, A.M. Cartier (CEA-DRT), and F. Rieutord (CEA-DRFMC)
9:201007 Wafer Bonded Abrupt Junction Tunnel Diodes - R. Esser (American Society of Engineering Education), K. Hobart, and F. Kub (United States Naval Research Laboratory)
9:40 Thirty-Minute Intermission
10:101008 Future Trends in SOI Devices - T.R. White, A. Barr, A. Thean, A. Vandooren, L. Mathew, M. Mendicino, G. Yeap, B.-Y. Nguyen, and M. Orlowski (Motorola Digital DNA Laboratories)
10:401009 Bonded Compliant Substrate for Epitaxy High Brightness Light Emitting Diodes - P.C. Liu and Y.S. Wu (National Chiao Tung University)
11:001010 Mode Conversion Optical Isolator Fabricated by Wafer Bonding - H. Yokoi, T. Mizumoto, and H. Iwasaki (Tokyo Institute of Technology)
11:201011 Thin Film Sputtered Silicon For Low Temperature Wafer Bonding Applications - R. Hurley, H. Gamble, S. Suder, and M. Armstrong (Queen's University Belfast)
11:401012 UV/Ozone Activation Treatment for Wafer Bonding - K. Hobart, F. Kub (Naval Research Laboratory), C. Colinge, and G. Ayele (California State University)

Bonding for MEMS Applications

Co-Chairs: I. Suni and T. Suga

13:401013 Anodic Bonding and the Intergration with Electronics - K. Schjolberg-Henriksen, A. Hanneborg (University of Oslo), and G. Uri Jensen (SINTEF Electronics and Cybernetics)
14:101014 Silicon-Based Flexible Electronics - M. Reiche (Max-Planck Institut fur Mikrostructurphysik)
14:401015 Fabrication and Characterization of Multi-layered SOI for MEMS Applications - K. Somasundram, D. Cole, C. McNamara, A. Boyle, P. McCann, C. Devine, and A. Nevin (Analog Devices Belfast Ltd.)
15:001016 Bonding and Contacting of MEMS-Structures on Wafer Level - J. Froemel, T. Gessner, C. Jia, and M. Wiemer (Fraunhofer Institute)
15:201017 Development of an UHV Wafer Scale Surface Activated Bonding Machine for MEMS Packaging - M. Howlader, H. Okada, T. Itoh, and T. Suga (The University of Tokyo)
15:40 Twenty-Minute Intermission

Exfolation Techniques

Co-Chairs: I. Suni and T. Suga

16:001018 Hydrogen and Helium Implantation to Achieve Layer Transfer - C. Lagahe-Blanchard, N. Sousbie, S. Sartori, H. Moriceau, A. Soubie, B. Aspar (CEA / LETI), P. Nguyen, and B. Blondeau (SOITEC)
16:201019 Low Temperature Si Layer Transfer by Mechnical Ion-Cut - Y. Cho and N. Cheung (University of California, Berkeley)
16:401020 Mechanical Delamination for the Materials Integration - K. Henttinen, T. Suni, M. Kulawski, and I. Suni (VTT Centre for Microelectronics)
17:001021 GaAs Layer Splitting By Helium And/Or Hydrogen Implantation - I. Radu, I. Szafraniak, R. Scholz, M. Alexe, and U. Gosele (Max Planck Institute of Microstructure Physics)
17:201022 Debonding of Directly Wafer-Bonded Silicon After High Temperature Process Steps - J. Bagdahn, H. Knoll, M. Petzold (Fraunhofer Institute for Mechanics of Materials), and M. Wiemer (Fraunhofer Institute for Microintegration and Reliability)
17:401023 Ultra High Precision Of The Tilt/Twist Misorientation Angles In Silicon/Silicon Direct Wafer Bonding - F. Fournel, H. Moriceau, B. Aspar (CEA-DRT), N. Magnea, J. Eymery, F. Leroy, K. Rousseau, and J.-L. Rouviere (CEA Grenoble)

Thursday, May 1, 2003

Level 2 Hallway, Le Palais des Congres

Thursday Evening Poster Session

Co-Chairs: C. Hunt and S. Bengtsson

o1024 On the Effect of Plasma Treatments on Low Temperature Bonding - M. Gabriel (Suss MicroTec), M. Eichler (Fraunhofer IST), and M. Reiche (Max-Planck-Institut fuer Mikrostrukturphysik)
o1025 AlGaInP Light-Emitting Diodes with Metal Substrates Fabricated by Wafer Bonding - W.C. Peng and Y.S. Wu (National Chiao Tung University)
o1026 Characteristics and Applications of Silicon Direct Bonded Interfaces - P. McCann, C. Devine (Analog Devices Belfast), H. Gamble (Queen's University Belfast), and A. Nevin (Analog Devices Belfast)
o1027 Silicon Wafer Bonding for Encapsulating Surface-Micromachined MEMS Using Intermediate Glass Layers - R. Knechtel, J. Heller (X-FAB Semiconductor Foundries AG), M. Wiemer, and J. Fromel (Fraunhofer Institute for Reliability and Microintegration)
o1028 Role of Wafer Bow and Etch Patterns in Direct Wafer Bonding - K. Turner and M. Spearing (Massachusetts Institute of Technology)
o1029 The Feasibility of Wafer Bonding by Indium Tin Oxide Intermediate Layer for Light Emitting Diodes - P.C. Liu, C.Y. Hou, C.L. Lu, and Y.S. Wu (National Chiao Tung University)
o1030 Healing Mechanism of Interfacial Voids in GaAs Wafer Bonding - Y.S. Wu and W.C. Peng (National Chiao Tung University)
o1031 Frequency-Dependent Conductance and Capitance of the Semiconductor Homojunction and Evaluation of Interface-States Parameters in p-Si/p-Si Directly Bonded Structures - V. Stuchinsky (Institute of Semiconductor Physics)
o1032 Interfacial Tunneling Oxide: Impact on Electrical Characterization of Unipolar Si/Si Bonded Junctions - V. Stuchinsky (Institute of Semiconductor Physics)
o1033 Improved Charcacterization Methods for Unipolar Diretly Bonded Semiconductor Junctions - V. Stuchinsky and G. Kamaev (Institute of Semiconductor Physics)
o1034 Traps at the Bonded Si/SiO2 Interface in Silicon-on-Insulator Structures - I. Antonova (Institute of Semiconductor Physics), J. Stano (Joint Institute for Nuclear Research), D. Nikolaev, O. Naumova, V. Popov (Institute of Semiconductor Physics), and V. Skuratov (Joint Institute for Nuclear Research)
o1035 Effect of Gamma-Irradiation on the the Electrical Properties of Unipolar Directly Bonded p-Si/p-Si Junctions - V. Stuchinsky, G. Kamaev (Institute of Semiconductor Physics), V. Bolotov, and U. Sten'kin (Institute of Sensor Microelectronics)
o1036 Nano-Voids at Hydrophilic, Hydrophobic, and UHV Bonded Silicon Interfaces Detected by TEM - A. Reznicek, R. Scholz, S. Senz, and U. Goesele (Max-Planck-Institute of Microstructure Physics)
o1037 Characterization of Bonded Interface by HF Etching Method - T. Suni, J. Kiihamäki, K. Henttinen, I. Suni (VTT Centre for Microelectronics), and J. Mäkinen (Okmetic Oyj.)
o1038 Triple-Stack Anodic Bonding for MEMS Applications - V. Dragoi, T. Glinsner, P. Hangweier, and P. Lindner (EV Group E. Thallner GmbH)
o1039 Pretreatment Effects on Void Formation for Low Temperature Si-Si Bonded Wafers - X.X. Zhang and J.-P. Raskin (Universite Catholique de Louvain)
o1040 Wafer-Scale Surface Activated Bonding of Silicon, Silicon Oxide, and Copper at Low Temperature - T.H. Kim, M. Howlader, T. Itoh, and T. Suga (The University of Tokyo)
o1041 X-ray Studies of Plasma Assisted Wafer Bonding - M. Poulsen, A. Egebjerg, R. Feidenhans'l (Riso National Laboratory), F. Jensen (DTU), and O. Bunk (Riso National Laboratory)
o1042 Sealing of Cavities with Lateral Feed-Throughs by Anodic Bonding - R. Fleron and F. Jensen (Mikroelektronik Centret)
o1043 Atomic Structure of Twist Bonded Interfaces: A Molecular Dynamics Study - K. Scheerschmidt and V. Kuhlmann (Max Planck Institute of Microstructure Physics)
o1044 Bondability of Plasma Hydrogenated Silicon Wafers - A. Usenko (Silicon Wafer Technologies, Inc.), W. Carr, and B. Chen (New Jersey Institute of Technology)
o1045 Dynamics of Wafer Bonding - F. Rieutord (CEA-Grenoble), B. Bataillou (SOITEC), and H. Moriceau (CEA-Grenoble)
o1046 Plasma Assisted Low Temperature Wafer Bonding; Void Formation in the Oxide Free Interface - P. Amirfeiz, A. Sanz-Velasco, and S. Bengtsson (Chalmers University of Technology)
o1047 Wafer Bonding in 'Strained Silicon': Oppurtunities and Challenges - S. Christiansen and U. Goesele (Max Planck Institute of Microstructure Physics)