203rd Meeting - Paris, France

April 27-May 2, 2003



High Temperature Materials/Dielectric Science and Technology/Electronics/EUROCVD

Monday, April 28, 2003

Room 251, Level 2, Le Palais des Congres

Fundamental Aspects of CVD

Co-Chairs: F. Maury and F. Teyssandier

10:202030 Atomistic Simulations of Atomic Layer Deposition of High-K Dielectrics - C. Musgrave, Y. Widjaja, J. Han (Stanford University), and E. Garfunkel (Rutgers University)
10:502031 Surface and Gas Phase Chemistry of the MOCVD of ZnSe - D. Moscatelli, C. Cavallotti, M. Masi, and S. Carra (Politecnico di Milano)
11:102032 Investigation of Gas Phase Decomposition Mechanisms in GaN-CVD by Theoretical Methods: The "Entropic Challenge" - R. Schmid, B. Wolbank, and D. Basting (Technische Universitaet Muenchen)
11:302033 Decomposition, Oxidation, and Hydrolysis Kinetics of Monobutyltintrichloride - T. van Mol (TNO TPD) and M. Allendorf (Sandia National Laboratories)
11:502034 Dependence of Thermodynamic and Kinetic Parameters of CVD-Processes From Using Chelates Structure - T.V. Tabenskaia (Taras Shevchenko National University), A.I. Gerasimchuk, and Y.A. Mazurenko (NAS Ukraine)

Fundamental Aspects of CVD

Co-Chairs: F. Maury and F. Teyssandier

13:402035 Non-Equilibrium Effects During Disilane Decomposition - W. Tsang (National Institute of Standards and Technology)
14:002036 Quantifying Superconformal Filling of Submicrometer Features Through Surfactant Catalyzed Chemical Vapor Deposition - D. Josell, T. Moffat, D. Wheeler (National Institute of Standards and Technology), S. Pyo, and S. Kim (Hynix Semiconductor)

Modeling and Simulation

Co-Chairs: F. Teyssandier and C. Kleijn

14:202037 From Pycrocarbon CVD to Pyrocarbon CVI - G.L. Vignoles, F. Langlais, N. Reuge, H. Le Poche, C. Descamps, and A. Mouchon (University Bordeaux 1)
14:502038 An Open-Source, Extensible Software Suite for CVD Process Simulation - D. Goodwin (California Institute of Technology)
15:102039 Heat Transfer in Very Low Pressure Stagnation Flow CVD Reactors - R. Dorsman and C.R. Kleijn (Delft University of Technology)
15:302040 Modeling of Transport and Kinetic Processes in an Atomic Layer Deposition Reactor - B. Devulapalli (Fluent Inc.), J. McInerney (Novellus Systems Inc.), and M. Dharan (Fluent Inc.)
15:50 Twenty-Minute Intermission
16:102041 Aerosol Dynamics Modeling and Computational Fluid Dynamics of a Laser-Driven Nanoparticle Synthesis Reactor - S. Talukdar, C. Ng, and M. Swihart (University at Buffalo)
16:302042 Predictive Model Extraction from Commercial Scale Poly-silicon LPCVD Reactor - R. Shimizu, M. Ogino (Fuji Electric Corporate R and D, Ltd.), M. Sugiyama, and Y. Shimogaki (University of Tokyo)
16:502043 Tin Oxide Deposition in a Cold-wall CVD Reactor: Computations and Experiments - T.C. Xenidou, A.G. Diamantis, A.G. Boudouvis, D.M. Tsamakis, and N.C. Markatos (National Technical University of Athens)
17:102044 Critical Issues in Group-III Nitride MOVPE Modeling - R. Talalaev, E. Yakovlev, A. Vorob'ev (Soft-Impact Ltd.), and Y. Makarov (STR, Inc.)
17:302045 Local Deposition Rates of Greek{a}-Al_2O3 from AlCl3-CO2-H2-HCl Derived with Phoenics-CVD from Thermogravimetric Measurements in a Hot-Wall Reactor with Long Isothermal Zone - J. Muller and D. Neuschütz (Rheinisch-Westfalische Technische Hochschule Aachen)
17:502046 Towards 3D-Simulation of Gas Phase Reactions Involved in the Deposition of Alpha-Al2O3 - J. Contreras Espada, J. Janicka, and A. Sadiki (TU-Darmstadt)

Tuesday, April 29, 2003

Materials Modeling, Material Properties

Co-Chairs: M. Swihart and C. Cavalloti

8:002047 Use of Surfactants in Organometallic Vapor Phase Epitaxy - G.B. Stringfellow, D.C. Chapman, R.R. Wixom (University of Utah), B.J. Kim, and T.Y. Seong (Kwangju Institute of Science and Technology)
8:302048 Arrangement of Silicon and Oxygen Atoms in Low Pressure Chemically Vapor Deposited SiO2 Films by SiH4 - O2 and TEOS Chemistries: Comparison with Thermally Grown SiO2 Films - V. Vamvakas, A. Pappa, and D. Davazoglou (Institute of Microelectronics)
8:502049 Mechanical Characterisation of Zirconium Oxide Thin Films Deposited By Chemical Vapor Deposition - O. Bernard, L. Rapenne, A.M. Huntz, M. Andrieux (Universite Paris Sud Orsay), and S. Poissonnet (CEA-Saclay)
9:102050 Electrochromic Characterization of Mo - W Mixed Oxides and MoO3 Thin Films - K. Gesheva, T. Ivanova (BAS), A. Kovalchuk, B. Gurtovoi, and O. Trofimov (RAS)
9:302051 Synthesis and Structural Characterizations of Vanadium Oxides Thin Films Prepared by MOCVD and ALD - A. Mantoux, H. Groult (UPMC), P. Doppelt (ESPCI), J.C. Badot (ENSCP), E. Balnois (UPMC), N. Baffier, and D. Lincot (ENSCP)
9:502052 Evaluation of TiN and HfN as Interlayers between Alumina Diffusion Barrier Coatings and Gas Turbine Blade Base Material - J. Muller (Rheinisch-Westfalische Technische Hochschule Aachen), K. Kohse-Hoinghaus (Universitat Bielefeld), B. Atakan (Universitat Duisburg), and J.M. Schneider (Rheinisch-Westfalische Technische Hochschule Aachen)
10:10 Twenty-Minute Intermission

Oxide Compunds

Co-Chairs: R. Fischer and M. Morstein

10:302053 Films of Metaloxides and Composites through Single Source Precursor CVD - M. Veith, K. Andres (Universitat des Saarlandes), S. Mathur, H. Shen (INM), K. Valtchev, Y. Wolf, and M. Haas (Universitat des Saarlandes)
11:002054 Epitaxial Stabilization in MOCVD of Oxide Thin Films - A. Kaul, O. Gorbenko, I. Graboy, M. Novozhilov, A. Bosak, A. Kamenev, S. Antonov, I. Nikulin, A. Mikhailov, and M. Kartavtzeva (Moscow State University)
11:202055 MOCVD of Oxides on Textured Ni for High Temperature Superconducting Tapes - O. Stadel, M. Liekefett, J. Schmidt, G. Wahl (Technical University Braunschweig), O. Gorbenko, and A. Kaul (Moscow State University)
11:402056 Aluminium Oxide Thin Film Grown by Low Pressure MOCVD using Aluminium Acetylacetone and Nitrous Oxide - M.P. Singh (Indian Institute of Science), T. Shripathi (Inter University Consortium), and S.A. Shivashankar (Indian Institute of Science)
12:002057 Parametric Study of the CVD of YSZ From Organometallic Precursors - T. Besmann (Oak Ridge National Laboratory), V. Varanasi, T. Anderson (University of Florida), and T. Starr (University of Louisville)

High-K Materials

Co-Chairs: M. Allendorf and R. Gordon

14:002058 Balancing Reactor Fluid Dynamics and Deposition Kinetics to Achieve Compositional Variation in Combinatorial Chemical Vapor Depositions - W. Gladfelter, B. Xia, F. Chen, S. Campbell, and J. Roberts (University of Minnesota)
14:302059 Novel Precursors for High K Dielectrics and Metal Electrodes Part II: Deposition - J. Atwood, D. Hoth, D. Moreno (University at Buffalo), C. Hoover, S. Meiere, D. Thompson, G. Piotrowski, M. Litwin, and J. Peck (Praxair Electronics)
14:502060 Chemical Vapor Deposition of Zirconium Tin Titanate: A Dielectric Material for Potential Microelectronic Applications - E. Mays, D. Hess, and W. Rees (Georgia Tech)
15:102061 Hafnium Titanium Silicate High-k Dielectric Films Deposited by MOCVD using Novel Single Source Precursors - S. Zuercher (Swiss Federal Institute of Technology (ETH)), M. Morstein (PLATIT AG), M. Lemberger, and A. Bauer (Fraunhofer Institut fur Integrierte Schaltungen, , Bauelementetechnologie)
15:302062 Development of Improved Precursors for the MOCVD of Bismuth Titanate - A.C. Jones (University of Liverpool), P.A. Williams (Epichem Limited), N.L. Tobin, P.R. Chalker, P. Marshall (University of Liverpool), P.A. Lane, P.J. Wright, P. Donohue (QinetQ), L.M. Smith, and H.O. Davies (Epichem Limited)
15:50 Twenty-Minute Intermission
16:102063 Effect of Solvent on Growth of Ru and RuO_2 Films by Liquid Injection MOCVD - K. Frohlich, K. Husekova, D. Machajdik, J. Soltys, V. Patoprsty (SAS), P. Baumann, J. Lindner, and M. Schumacher (AIXTRON AG)
16:302064 Utilizing MOCVD for High-Quality Zirconium Dioxide Gate Dielectrics in Microelectronics - S. Harasek, H. Wanzenboeck, W. Brezna, J. Smoliner, E. Gornik, and E. Bertagnolli (Vienna University of Technology)

Conducting, Semi-Conducting or Magnetic Materials

Co-Chairs: M. Pons and E. Blanquet

16:502065 CVD-Grown Thin Films of Tetracyanoethylene-Based Room-Temperature Ferrimagnets - H. Casellas, L. Valade, D. De Caro, P. Cassoux (CNRS), F. Villain (Universite Pierre et Marie Curie), and D. Gatteschi (Polo Scientifico)
17:102066 Chemical Vapor Deposition of Cobalt for Magnetic Applications - N. Deo, J. Montgomery, M. Bain, and H. Gamble (The Queen's University of Belfast)
17:302067 CVD of Transition Metals from Metalorganic Complexes - N. Popovska, A. Schneider, G. Emig, U. Zenneck, and C. Topf (University Erlangen-Nuremberg)
17:50 Ten-Minute Intermission

CHEMKIN Demonstration

18:00 CHEMKIN Demonstration

Hall Maillot, Level 2, Le Palais des Congres

Technical Exhibit and Tuesday Evening Poster Session, Fundamental Aspects of CVD

Co-Chairs: M. Allendorf and F. Maury

o2068 Thermodynamics and Reaction Pathways in the Decomposition, Oxidation, and Hydrolysis of Monobutyltintrichloride - M. Allendorf, I. Nielsen (Sandia National Laboratories), C. Melius (Lawrence Livermore National Laboratory), and T. Van Mol (TNO TPD)
o2069 A DSC Study on the Submliation and Decomposition of ZnO CVD Precursor, Zinc Acetylacetonate - Y. Chang, J. Hsieh, J. Lin, C.A. Wang, L. Hong, and Z. Shen (Lunghwa University of Science and Technology)
o2070 Mechanism of Oxygen Contamination in PECVD a-Si:H Films - M. Hiramatsu, Y. Kimura, M. Jyumonji, M. Nishitani, and M. Matsumura (Advanced LCD Technologies Development Center Co., Ltd.)
o2071 A Correlation between Volatility and Molecular Structure: Spectroscopic Estimation of the Temperature for Onset of Sublimation in Metal beta-Diketonates - M. Das and S.A. Shivashankar (Indian Institute of Science)
o2072 Thermal Decomposition of Ti Precursors in Gas Phase - J.S. Heo, Y.S. Cho, J.C. Kim, and S.H. Moon (Seoul National University)
o2073 Effect of Magnetic Field on Crystallization Process of Amorphous Si Thin Film Using Metal-Induced Lateral Crystallization - M.S. Kim, G.-B. Kim, Y.-G. Yoon, and S.K. Joo (Seoul National University)
o2074 The Problem of the Storage of Alkaline Earth Precursors Containing 2,2,6,6-Tetramethylheptanedione -3,5 - V. Vertlib, A. Drozdov, I. Timokhin, S. Troyanov (Moscow State University), C. Pettinari, F. Marchetti (Universita degli Studi di Camerino), Y.-S. Min, and D. Kim (Samsung Advanced Institute of Technology)
o2075 Magnesium Acetylacetonate-Dipivaloylmethanate as a New Precursor for MOCVD of MgO Thin Films - O. Kotova, A. Botev, O. Gorbenko, N. Kuzmina, A. Kaul (Moscow State University), I. Malkerova, and A. Alikhanyan (Kurnakov Institute of General and Inorganic Chemistry)
o2076 Mechanisms of Thermal and Photo Assisted MOCVD Processes from M(hfac)2tetraglyme (M=Sr,Ba) Precursors - G. Condorelli, G. Anastasi, S. Giuffrida, and I. Fragala (Universita di Catania and INSTM UdR di Catania)
o2077 Heat and Mass Transfer of Chemical Deposition of Zinc-Selenide Layers - V.G. Minkina (National Academy of Sciences)
o2078 Gas-Phase Kinetic Modeling in the AlCl3-CO2-H2-HCl System in View of the Chemical Vapor Deposition of Al2O3 - P. Tan (Portovesme s.r.1), J. Muller, and D. Neuschutz (Rheinisch-Westfalische Technische Hochschule Aachen)

Technical Exhibit and Tuesday Evening Poster Session, Modeling and Simulation

Co-Chairs: M. Allendorf and F. Maury

o2079 Modeling and Simulations of the High Pressure Organometallic Chemical Vapor Deposition of InN Using Trimethylindium and Ammonia - S.D. McCall (Spelman College) and K.J. Bachmann (North Carolina State University)
o2080 Procedure and Related Tools Proposed for the Modeling Gas-Phase Mechanisms Involved in Chemical Vapor Deposition: Application to CVD of SiC - S. De Persis, A. Dollet, and F. Teyssandier (Institut de Science et de Genie des Materiaux et Procedes)
o2081 Hybrid Model-Base Predictive and Proportional-Integral-Derivative Temperature Control System for LPCVD Processes - Z. Liu and F. Huussen (ASM International N.V.)
o2082 Simulation of Silicon Thermal Oxidation and Stress Analysis in Flash memory Technology - A. Veneroni, A. Beretta, and M. Masi (Politecnico di Milano)
o2083 Simulation of Epitaxial Silicon Deposition and Dopant Incorporation in an Industrial Barrel Reactor - M. Di Stanislao, G. Valente, S. Fascella, M. Masi, and S. Carra (Politecnico di Milano)
o2084 Nonequlibrium Nondissipative Thermodynamics in Chemical Vapor Deposition - J.-T. Wang and D.W. Zhang (Fudan University)
o2085 Study of the Automatic Modeling of Reaction Systems for Chemical Vapor Deposition Processes using Genetic Algorithms - T. Takahashi (Shizuoka University), K. Funatsu (Toyohashi University of Technology), and Y. Ema (Shizuoka University)
o2086 Thermodynamic Optimisation of OMCVD Deposition of SrTiO_3 - E. Rangel Salinas, A. Pisch, C. Chatillon, and C. Bernard (Domaine Universitaire)
o2087 Modeling of Thermo- and Mass Transfer Processes at Sublimation of Molecular Crystals of CVD Precursors - N.V. Gelfond, A.N. Cherepanov, A.N. Mikheev, V.K. Cherepanova, V.N. Popov, N.B. Morozova, and I.K. Igumenov (Russian Academy of Sciences)
o2088 Modeling Analysis of SiC CVD in the Horizontal Hot Wall Reactors - A. Semennikov, R. Talalaev, A. Vorob'ev (Soft-Impact Ltd.), and Y. Makarov (STR, Inc.)

Technical Exhibit and Tuesday Evening Poster Session, Materials Modeling, Materials Properties

Co-Chairs: M. Allendorf and F. Maury

o2089 Formation Mechanism of Local Thickness Profile of Silicon Epitaxial Film - H. Habuka, S. Fukaya, A. Sawada, T. Takeuchi, and M. Aihara (Yokohama National University)
o2090 Optical Charaterization of Solid Phase Crystallization of Silicon Thin films Obtained be LPCVD - M. Modreanu (National Microelectronics Research Centre (NMRC)), M. Gartner (Institute of Physical Chemistry I.G. Murgulescu), C. Cobianu (Valahia” Univ. from Targoviste), and P. Hurley (National Microelectronics Research Centre (NMRC))
o2091 Nucleation and Coalescence Phenomena during Sublimation/Recondensation of CVD Precursor, Zinc Acetylacetonate, Obeserved by Polarized Optical Microscopy - Y. Chang, W. Chen, Z. Li, J. Jang, and J. Lin (Lunghwa University of Science and Technology)
o2092 Interrelation of Bond Configuration and Optical Proerties of Mc-Sic Thin Films by Spectroscopic Ellipsometry - M. Losurdo, G. Ianuzzi, P. Capezzuto, and G. Bruno (IMIP-CNR)
o2093 A New Process for the Solid Phase Crystallization of a-Si by the Thin Film Heaters - I.-Y. Jung, B.D. Kim, N.K. Song, and S.-K. Joo (Seoul National University)
o2094 NMR, X-Ray and Mass Spectrometry Characterization of Some Heteroleptic Aluminum Alkoxide Complexes - D. Bau, G. Carta, F. Benetollo, G. Rossetto, S. Tamburini, P. Zanella (CNR-ICIS), and A. Turgambaeva (Institute of Inorganic Chemistry SB RAS)
o2095 CVD of Thin Oxygen Permeable Membrane Films - R. Muydinov, M. Novojilov, O. Gorbenko, I. Korsakov, A. Kaul (Moscow State University), D. Stiens, S. Samoilenkov, and G. Wahl (TU Braunschweig)
o2096 Electrochromism in WO_3 and WO3-Pt Doped Naophasic Thin Films Deposited by MOCVD on Gold Substrates - G. Carta (CNR-ICIS), P.L. Cavallotti (Politecnico di Milano), M. Filippin (CNR-ICIS), L. Magagnin (Politecnico di Milano), G. Rossetto, and P. Zanella (CNR-ICIS)
o2097 Diamond Nucleation on Silicon using an Intermediate Temperature Step - L. Dumitrecsu Buforn and E. Blank (Ecole Polytechnique Federale de Lausanne)
o2098 MOCVD of Tungsten Nitride Thin Films from The Imido Complex Cl4(CH3CN)W(NiPr): Effect Of NH3 On Film Properties - O. Bchir, T. Anderson, B. Brooks, and L. McElwee-White (University of Florida)
o2099 Thermal Properties of Ir(I) Precursors: Acetylacetonato(1,5-Cyclooctadiene)Iridium(I) and (Methylcyclopentadienyl)(1,5-Cyclooctadiene)Iridium(I) - N.B. Morozova, N.V. Gelfond, P.P. Semyannikov, S.V. Trubin, I.K. Igumenov (Russian Academy of Sciences), and L. Gimeno-Fabra (EADS Germany GmbH)
o2100 Electrical Properties of Tin Films Prepared by Plasma Assisted Atomic Layer Deposition Using Tetrakis(Dimethylamido)Titanium - D.-H. Kim, Y.J. Kim, and Y.S. Song (Chonnam National University)
o2101 A Method to Extract Physical Properties from Raman Scattering Data in a CVD Reactor - J. Hwang (University of Florida), C. Park (Yeungnam University), M. Huang, and T. Anderson (University of Florida)
o2102 The Electrical Characteristics of Polycrystalline Thin-Film Transistors Fabricated by the Thin Film Heaters - B.D. Kim, N.K. Song, I.Y. Jung, Y.G. Yoon, G.B. Kim, and S.K. Joo (Seoul National University)
o2103 Iptical Thin Film Coatings of CVD Molybdenum Oxides and Investigations of Their Electrochromic Properties - T. Ivanova and K. Gesheva (Bulgarian Academy of Sciences)
o2104 Mass-Transfer and Doping Processes of the Inside Surfaces of Cast Iron Sleeves Using the Electrolyte-Plasma Treatment - A. Pogrebnjak (Sumy Institute for Surface Modification)
o2105 Comparison of Photovoltaic Performance of SnO2: F Coated Substrates Made Using APCVD with Different Sn Precursors - T. van Mol, F. Grob, K. Spee (TNO TPD), K. van der Werf, and R. Schropp (Utrecht University)
o2106 Electrical Measurements of Thermal-Processed CVD-Si/SiGe Layers on Nanometer Thick SOI - K. Fujinaga (Hokkaido Institute of Technology)

Level 2 Hallway, Le Palais des Congres

Technical Exhibit and Tuesday Evening Poster Session, Oxide Compounds

Co-Chairs: M. Allendorf and F. Maury

o2107 Pulsed Injection MOCVD of YSZ Thin Film for Membrane Applications - G. Garcia, J. Caro, J. Santiso, J.A. Pardo, A. Figueras (Institut de Ciencia de Materials de Barcelona), and A. Abrutis (Vilnius University)
o2108 Growth of Al2O3 Films by Pulsed Injection MOCVD: Comparative Study of Precursor Materials - A. Abrutis, A. Bartasyte, V. Kubilius, A. Teiserskis (Vilnius University), P. Baumann, J. Lindner, M. Schumacher (Aixtron AG), and C. Dubourdieu (Domaine Universitaire)
o2109 Effect of Solvent on the Deposition Behavior of MOCVD-Pb(Zr,Ti)O_3 Films Using Liquid-Deliver Source Supply System - H. Funakubo, G. Asano, T. Ozeki (Tokyo Institute of Technology), H. Machida (TRI Chemical Laboratory, Inc.), T. Yoneyama, and Y. Takamatsu (Japan Pionics Co., Ltd.)
o2110 Key Factors to Grow (002) Zinc Oxide Films by MOCVD at 320oC and Atmospheric Pressure - Y. Chang, H. Lu, Y. Hung, C. Lee, J. Chen, and Y. Jian (Lunghwa University of Science and Technology)
o2111 MOCVD of Ta2O5 using TaC12H30O5N as Precursor for Batch Fabrication - D. Briand, G. Mondin, S. Jenny (Universite de Neuchatel), O. Banakh (Ecole d'Ingenieurs du Canton de Neuchatel), P. van der Wal, and S. Jeanneret (Universite de Neuchatel)
o2112 Investigation of Chemical Vapor Deposition Processes to Perform Dense- a-Alumina Coating on Superalloys - N. Bahlawane, S. Blittersdorf, K. Kohse-Hoinghaus (Universitat Bielefeld), B. Atakan (Gerhard-Mercator-Universitat Duisburg), and J. Muller (Institut fur Werkstoffchemie)
o2113 Fabrication of Electrochromic Displays by Chemically Vapor Depositing and Patterning WO_3 Films on SnO2:F Covered Glass Substrates - M. Vassilopoulou, D. Pappas, I. Raptis, D. Davazoglou (NCSR "Demokritos"), and I. Kostis (Technological and Educational Institute of Pereaus)
o2114 Pure and Lu(III)-Doped Nanocrystalline ZnO Films by CVD - D. Barreca (Istituto di Scienze e Tecnologie Molecolari del C.N.R), G.A. Battiston, D. Berto, A. Convertino (Istituto di Chimica Inorganica e delle Superfici del CNR), A. Gasparotto (Metallorganica ed Analitica and INSTM), R. Gerbasi (Istituto di Chimica Inorganica e delle Superfici del CNR), E. Tondello (Metallorganica ed Analitica and INSTM), and S. Viticoli (Istituto per lo Studio dei Materiali Nanostrutturati del C.N.R.)
o2115 Growth of SnO2 Thin Films by ALD and CVD: A Comparative Study - J. Sundqvist and A. Harsta (Uppsala University)
o2116 Sub-Estioquiometric Titania Layers Prepared by MOCVD for Photocatalysis Applications - I. Justicia, G. Garcia (ICMAB/CSIC), G. Battiston, R. Gerbasi (ICIS/CNR), A. Figueras (ICMAB/CSIC), and D. Dorignac (CEMES-CNR)
o2117 Direct Injection Chemical Vapor Deposition Of Textured Zirconium Oxide Films - L. Rapenne, O. Bernard, A.M. Huntz, M. Andrieux, J.C. Poulin, H. Christian (Universite Paris Sud Orsay), and W. Seiler (ENSAM Paris)
o2118 Strongly Oriented Thin Films of Er_2O3 Grown on Fused Quartz by Low-Pressure MOCVD - M.P. Singh, K. Shalini, and S.A. Shivashankar (Indian Institute of Science)
o2119 Atmospheric Pressure Deposition of SiO_X Thin Films by Oxidation of Liquid HMDSO in Remote Plasma - S. Huet, T. Belmonte, T. Czerwiec, J.-M. Thiebaut (Ecole des Mines), and S. Bockel-Macal (Air Liquide)
o2120 Novel Compounds For Use As TiO_2 Precursors In Thin Film Deposition By Liquid Injection Metal Organic Chemical Vapor Deposition. - C. Clarke, N. Boag, and M. Pemble (University of Salford)
o2121 The Influence of Film Thickness On Photoactivity For TiO_2 Films Grown On Glass By CVD - M. Nolan, M. Pemble, and D. Sheel (University of Salford)
o2122 PI-MOCVD Original Buffer Layers for YBa2Cu3O7-d Coated Conductors - S. Beauquis, S. Donet, F. Weiss, H. Roussel (CNRS), and A. Abrutis (Vilnius University)
o2123 MOCVD of RuO2 Thin Films Using benzene-cyclohexadiene Ru - H.-N. Hwang, K.C. Han, K.-S. An, T.-M. Chung, Y. Kim, and Y. Kim (Korea Research Institute of Chemical Technology)
o2124 Preparation of Tl-1223 Superconducting Films with High Transport Jc by Spray Pyrolysis - S. Phok, P. Galez, J.-L. Jorda (Universite de Savoie), F. Weiss, D. De Barros (LMGP-INPG), C. Peroz, and C. Villard (CNRS-CRTBT)
o2125 Characterization of Vanadium Oxide Films Prepared by Atmospheric Pressure Chemical Vapor Deposition - D. Vernardou (University of Salford)
o2126 Deposition of Mixed Conducting Oxides Thin Films on Porous Ceramic Substrates - V. Faucheux, J.-L. Deschanvres, S. Pignard, M. Audier (ENSPG-INPG), A. Teiserskis, A. Abrutis (Vilnius University), and S. Rushworth (Inorgtech Ltd.)
o2127 Deposition of Thin Film Transition Metal Oxides (TMO) on Glass by Combustion Chemical Vapor Deposition (C-CVD) - G. Benito, M.J. Davis (University of Salford), S.J. Hurst (Pilkington Technology Management Ltd.), D.W. Sheel, and M.E. Pemble (University of Salford)
o2128 Textured SrTiO_3 Thin Films on SiO2/Si by Liquid Injection MOCVD using a New Bimetallic Precursor - S. Lhostis (STMicroelectronics), M. Audier, J.P. Senateur, C. Dubourdieu, and L. Auvray (Domaine Univerisitaire)
o2129 New Yttrium Precursors For YBCO Films Prepared By PI-MOCVD - J. Terrematte, S. Daniele, L. Hubert-Pfalzgraf (Universite Claude Bernard Lyon 1), J.M. Decams, S. Le Gall, H. Guillon (JIPELEC), S. Beauquis, P. Hoi-Pang, C. Jimenez, and F. Weiss (Universite de Grenoble)
o2130 Buffer Layers and YBCO Growth on Ni RABiT Tapes - D. Sebastien, W. Francois, C. Patrick (ENSPG-LMGP), S. Dietmar (IFW), P. Werner (THEVA), and B. Christian Eric (NEXANS)
o2131 MOCVD of TiO2 Thin Films Using a New Class of Metalorganic Precursors - R. Bhakta, U. Patil, and A. Devi (Ruhr Universitat Bochum)
o2132 Coordination Compounds- Precursors for the Synthesis of Barium and Strontium Titanates by MOCVD-Technique - V.G. Sevast'yanov, N.T. Kuznetsov, D.V. Sevast'yanov, S.P. Ionov, Y.S. Ezhov (Russian Academy of Sciences), E.P. Simonenko (M.V.Lomonosov Moscow State Academy of Fine Chemical Technology), T. Kemmitt (Industrial Research Limited), and B.I. Petrov (Russian Academy of Sciences)
o2133 MOCVD of ZRO2 Thin Films from Two Different B-Diketonate Precursors: Dependence of Microstructure and Growth Kinetics on the Precursor - M.S. Dharmaprakash and S.A. Shivashankar (Indian Institute of Science)
o2134 Deposition of Yttruin or Lanthanum-Substituted Bismuth Titanate Films by Direct Liquid Injection- Metal Organic Chemical Vapor Deposition for Use in Non-Volatile Memories - S.-W. Kang and S.-W. Rhee (Pohang University of Science and Technology)

Technical Exhibit and Tuesday Evening Poster Session, High-k Materials

Co-Chairs: M. Allendorf and F. Maury

o2135 Sr-Ti-0 Dielectric Films Grown by Injection MOCVD for High K Applications - L. Auvray, C. Dubourdieu, J.-P. Senateur (Ecole Nationale Superieure de Physique de Grenoble), S. Lhostis (STMicroelectronics), M. Audier, and P. Chaudouet (Ecole Nationale Superieure de Physique de Grenoble)
o2136 Infrared Spectroscopic Study on Metalorganic Chemical Vapor Deposition of (Ba,Sr)TiO_3 Films - T. Nakamura, T. Nishimura, S. Momose, and K. Tachibana (Kyoto University)
o2137 HfO_2 Films Obtained by Injection MOCVD - F. Roussel, H. Roussel, M. Audier, D. Catherine, J.-P. Senateur (UMR 5628), C. Jimenez (JIPELEC), T. Leedham, H. Davies, A. Jones (Epichem Oxides and Nitrides), B. O'Sullivan, M. Mondreau, P. Hurley (NMRC), Q. Fang, and I. Boyd (UCL)
o2138 MOCVD Growth of PR2O3 High-K Gate Dielectric for Silicon: Synthesis and Structural Investigation - R. Lo Nigro (IMM sezione CNR di Catania), R. Toro, G. Malandrino (Universita di Catania), V. Raineri (IMM sezione CNR di Catania), and I. Fragala (Universita di Catania)
o2139 Novel Precursors for High K Dielectrics and Metal Electrodes Part I: Synthesis - J. Atwood, D. Hoth, D. Moreno (University at Buffalo), C. Hoover, J. Peck, J. Natwora, M. Mosscrop, and S. Meiere (Praxair Electronics)
o2140 MOCVD of KNbO_3 Thin Films - I. Korsakov, M. Romanov, I. Bolshakov (Moscow State University), S. Zhgoon (Moscow Power Engineering Institute), G. Wahl (Technical University of Braunschweig), and A. Kaul (Moscow State University)
o2141 Synthesis and Characterization of Highly Oriented ZrTi04 Thin Films by Metal-Organic Chemical Vapor Deposition - G. Padeletti, M. Viticoli, A. Cusma (Inst. per lo Studio del Materiali Nanostrutturati), A. Santoni, S. Loreti (Encea C-R Frascati), C. Minarini (Enea C-R Portici), G.M. Ingo, and S. Kaciulis (Inst. per lo Studio del Materiali Nanostrutturati)

Technical Exhibit and Tuesday Evening Poster Session, Conducting, Semiconducting, Magnetic Materials

Co-Chairs: M. Allendorf and F. Maury

o2142 An n+-InGaAs/n-GaAs Dual-Doped-Channel Heterostructure Field-Effect Transistor (DDC-HFET) Grown by LP-MOCVD - H.-M. Chuang (National Cheng-Kung University), K.-W. Lin (Chien Kuo Institute of Technology), K.-H. Yu, C.-Y. Chen, J.-Y. Chen, and W.-C. Liu (National Cheng-Kung University)
o2143 (CuxZn1-x)Fe2O4 Ferrimagnetic Films Prepared by Atmospheric MOCVD at 360oC - Y. Chang, C. Huang, J. Lin, J. Yang, and Z. Yiu (Lunghwa University of Science and Technology)
o2144 Niobium and Molybdenum-Based Molecular Magnets Grown as Thin Films by Chemical Vapor Deposition - E. Lamouroux, E. Alric, H. Casellas, L. Valade, D. De Caro, M. Etienne (CNRS), and D. Gatteschi (Polo Scientifico)
o2145 MOCVD of Thin Mixed-Conducting Films on Porous Ceramic Substrates - D. Stiens, G. Wahl (Technische Universitat Braunschweig), G. Garcia (Inst. de Ciencia de Materials de Barcelona), A. Van Veen, and M. Rebeilleau (Institut de Recherche sur la Catalyse)
o2146 Low Temperature Deposition of Ruthenium Films using Novel MOCVD Precursor - N. Oshima, T. Shibutami, K. Kawano (TOSOH Corporation), S. Yokoyama, and H. Funakubo (Tokyo Insitute of Technology)
o2147 Effects of Co-doping Level on the Microstructures and Ferromagnetic Properties of Ti1-xCoxO2 Thin Films by Liquid-Delivery Metal-Organic Chemical Vapor Deposition - N.-J. Seong, Y.-N. Oh, and S.-G. Yoon (Chungnam National University)
o2148 MOCVD Growth and Characterization of Cobalt Phosphide Thin Films on InP Substrates - D. Barreca (University of Padova), A. Camporese (ICIS-CNR Padova), M. Casarin (University of Padova and INSTM), N. El Habra (ICIS-CNR Padova), A. Gasparotto (University of Padova), M. Natali, G. Rossetto (ICIS-CNR Padova), E. Tondello (University of Padova and INSTM), and P. Zanella (ICIS-CNR Padova)
o2149 Identification of Black Deposits Produced during the Hydride-OM VPE Growth of GaN - C. Park, S. Han, C. Doh, S. Yeo, D. Yoon (Yeungnam University), S.-K. Hwang, K.-H. Lee (Pohang University of Science and Technology), and T. Anderson (University of Florida)

Technical Exhibit and Tuesday Evening Poster Session, MOCVD of Miscellaneous Materials

Co-Chairs: M. Allendorf and F. Maury

o2150 Design of MOCVD Film Growth in a Hot Wall Tubular Reactor - G. Battiston, R. Gerbasi (Istituto di Chimica Inorganica e delle Superfici del C.N.R), and K. Raic (Belgrade University)
o2151 A Study on(311) CuCr2O4 Spinel Films Prepared by MOCVD - Y. Chang, C. Lin, and B. Lee (Lunghwa University of Science and Technology)
o2152 Polycrystalline Spinel Chromite (ZnCr2O4) Films Prepared by MOCVD - Y. Chang, H. Pen, and C. Chung (Lunghwa University of Science and Technology)
o2153 Tungsten Doped Vanadium Oxide Thin Films by Atmospheric Pressure Chemical Vapour Deposition - T. Manning and I. Parkin (University College London)
o2154 Tin Phosphide Coatings from the Atmospheric Pressure Chemical Vapour Deposition of SnCl_4 and PCychexxH3-x. - R. Binions, C. Carmalt, and I. Parkin (University College London)
o2155 Very Thin (<10nm) Silicon Oxynitride (SiOxNy) Layers Formed by PECVD - R. Beck, M. Cuch, A. Wojtkiewicz (Warsaw University of Technology), A. Kudla (Institute of Electron Technology), and A. Jakubowski (Warsaw University of Technology)
o2156 Preparation of Pd/Zn/ZnO Catalysts for Methanol Streamreforming by MOCVD - N. Popovska, F. Kießlich, and G. Emig (University Erlangen-Nuremberg)
o2157 Optical Properties of Low Pressure Chemically Vapor Deposited Silicon Oxynitride Films from SiCl_2H2-NH3-N2O Mixtures - D. Davazoglou (NCSR “Demokritos”)
o2158 MOCVD of Transparent, p-Type Conducting CuCrO_2 Thin Films using Acetylacetonate Precursors - S. Mahapatra, A.U. Mane, M.S. Dharmaprakash, P.S. Bera, M.S. Hegde, and S.A. Shivashankar (Indian Institute of Science)
o2159 Single Source MOCVD Precursors for RNiO_3 (R = Rare Earth Metal) Thin Film Deposition - P. Abdyushev, M. Novojilov, M. Ryazanov, E. Bochkov, N. Kuzmina, A. Kaul (Leninskie Gory), and A. Gleizes (Ecole Nationale Supérieure de Chimie de Toulouse)
o2160 Low-Temperature Solution for Silicon Nitride LPCVD using Cl-Free Inorganic Trisilylamine - N. Tamaoki, Y. Sato (Toshiba Corporation), C. Dussarrat, J.-M. Girard, and T. Kimura (Air Liquide Laboratories)

Technical Exhibit and Tuesday Evening Poster Session, Nonconventional CVD

Co-Chairs: M. Allendorf and F. Maury

o2161 Effects of Heat-treatment of Silica and Precursor on the Surface Density of Aminosilanes Deposited onto Silica by ALD - S. Ek, E. Iiskola, and L. Niinisto (Helsinki University of Technology)
o2162 Kinetic Analysis of the Low Temeprature CVD of Silicon/Silicon Carbide from Methyltrichlorosilane/ Hydrogen for the Ceramization of Biomorphic Carbon Preforms - N. Popovska, D. Almeida Streitwieser, H. Gerhard, and G. Emig (University Erlangen-Nuremberg)
o2163 Grafting Metalorganic Species into Mesoporous Silica from the Vapour Phase - A.N. Gleizes (Institut National Polytechnique de Toulouse), A. Fernandes, and J. Ghys-Dexpert (CNRS)
o2164 Fluidized Bed Chemical Vapor Deposition: State of the Art and Main Challenges - B. Caussat (LGC), P. Serp (LCCFP), and C. Vahlas (CIRIMAT)
o2165 Alkaline Earth Cyclopentadienyl Compounds as Precursors for Atomic Layer Deposition - T. Hatanpaa, T. Hanninen, J. Ihanus, J. Kansikas, I. Mutikainen, M. Vehkamaki, M. Ritala, and M. Leskela (University of Helsinki)
o2166 Atomic Layer Deposition of Ruthenium from RuCp_2 and Oxygen: Film Growth and Reaction Mechanism Studies - T. Aaltonen, A. Rahtu, M. Ritala, and M. Leskela (University of Helsinki)
o2167 Atomic Layer Deposition of Alumina from Trimethylaluminum and Ozone - P. Ho, C.-P. Chou (Reaction Design), S. Mokhtari, J. Bailey, and Y. Senzaki (ASML)
o2168 CVD Coating of Sapphire Fibers with hBN to Improve Mechanical Properties of Mechanical Properties of Reinforced NiAl Composites - K. Reichert (ALSTOM Ltd.), R. Cremer (Cemecon AG), and D. Neuschutz (RWTH Aachen)

Technical Exhibit and Tuesday Evening Poster Session, Process Control and Diagnostic

Co-Chairs: M. Allendorf and F. Maury

o2169 Investigation of Gas-Phase Reaction Effect on Deposition Behavior in MOCVD-Pb(Zr,Ti)O3 Film Using In-situ-Monitored by Fourier Transform Infrared Spectroscopy - G. Asano (Tokyo Institute of Technology), T. Satake, K. Ohtsuki (Horiba, Ltd), and H. Funakubo (Tokyo Institute of Technology)

Technical Exhibit and Tuesday Evening Poster Session, Assisted Methods

Co-Chairs: M. Allendorf and F. Maury

o2170 Investigation of Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition - C. Popov and W. Kulisch (University of Kassel)
o2171 Interaction between Active Plasma and Growing Co-C-O – Layer During PACVD - A. Nurnberg, R. Stolle, G. Wahl (TU Braunschweig), and K. Raic (Belgrade University)
o2172 Plasma-Enhanced Chemical Vapor Deposition of Er-doped Amorphous Silicon Thin Films - M.M. Giangregorio, M. Losurdo (Institute of Inorganic Methodologies and of Plasmas), P. Capezzuto (Universita degli Studi di Bari), and G. Bruno (Institute of Inorganic Methodologies and of Plasmas)
o2173 Atmospheric-Pressure Plasma-Enhanced Chemical Vapour Deposition (AP-PE-CVD) For Growth Of Thin Films At Low Temperature. - M.J. Davis, M. Tsanos, J. Lewis, D.W. Sheel, and M.E. Pemble (University of Salford)
o2174 Chormium and Zirconium Type Layers Produced from Metalorganic Compounds Using the Glow Discharge Conditions - J.R. Sobiecki and T. Wierzchon (Warsaw University of Technology)
o2175 Focused Ion Beam induced Chemical Vapor Deposition (FIB-CVD) for Local Nanodeposition of Dielectric Material - H. Wanzenboeck, H. Langfischer, S. Harasek, E. Auer, E. Bertagnolli, M. Gritsch, H. Hutter, J. Brenner, and H. Stoeri (Vienna University of Technology)
o2176 Morphological Studies of Focused Ion Beam Induced Tungsten Deposition - H. Langfischer, S. Harasek, H. Wanzenboeck, B. Basnar, E. Bertagnolli, and A. Lugstein (Vienna University of Technology)
o2177 Growth of ECR-CVD Carbon Nitride Films, with a High Nitrogen Content, from CH_4/N2/Ar Mixtures - M. Camero, C. Gomez-Aleixandre, and J.M. Albella (CSIC)
o2178 Inprovement of Deposition Rate of Silica Film in the Vacuum Ultraviolet CVD Using a Excimer Lamp by Applying the Bias - Y. Motoyama (Miyazaki OKI Electric Co., Ltd), H. Yanagita, Y. Maezono, A. Yokotani, and K. Kurosawa (Miyazaki University)
o2179 Composite Nitrided + Ti(N,C,O)Type Layers Produced by PAMOCVD Processes - T. Wierzchon, J. Sobiecki, P. Mankowski, and K. Roniatowski (Warsaw University of Technology)
o2180 Microwave PACVD of Lw Friction a-SiC Coatings : From Plasma Characterization to Material Mechanical Property - L. Thomas, F. Teyssandier, M. Ducarroir (IMP-CNRS), C. Boher (Ecole des Mines d'Albi Carmaux), L. Autrique, J.M. Badie, and R. Berjoan (IMP-CNRS)
o2181 Characterization of SiO2 Films by Photo-CVD using a Xe2 Excimer Lamp - K. Kurosawa (University of Miyazaki), J. Miyano (Miyazaki OKI Electric Co. Ltd.), Y. Maezono (University of Miyazaki), K. Toshikawa (Miyazaki OKI Electric Co. Ltd.), and A. Yokotani (University of Miyazaki)
o2182 Growth of Homogeneous and Gradient BCxNy Films by PECVD Using Trimethylamino Borane Complex - M. Kosinova, N. Fainer, Y. Rumyantsev, E. Maximovski, F. Kuznetsov (RAS), M. Terauchi, K. Shibata, and F. Satoh (Tohoku University)
o2183 Plasma Enhanced Chemical Vapor Deposition of PLASMA AlN Nanolayers - G. Beshkov (Institute of Solid State Physics) and K. Grogorov (Institute of Electronics)
o2184 Sythnesis of Ultrafine Oxides Powders by PA CVD - S.V. Volkov, Y.A. Mazurenko, A.I. Gerasimchuk, and V.P. Ovsiannaikov (NAS Ukraine)
o2185 Optimizing Net Deposition Rates for a High Density Plasma CVD Process - K. Niazi and Z. Chen (Intel Corporation)
o2186 Thin Tungsten and Tungsten Oxide Films Produced by Tungsten Pentacarbonoyle Pentylisonitrile in a Remote Plasma Reactor - F. Hamelmann, A. Brechling, A. Aschentrup, U. Heinzmann, P. Jutzi (Universitaet Bielefeld), J. Sandrock, and U. Siemeling (Universitaet Kassel)
o2187 High-Density Plasma CVD Films of Aluminum, Gallium, and Indium Nitrides from Coordination Compounds of Metals - Y.A. Mazurenko and A.I. Gerasimchuk (NAS Ukraine)

Technical Exhibit and Tuesday Evening Poster Session, Nanostructured Materials

Co-Chairs: M. Allendorf and F. Maury

o2188 SAXS/WAXD on Thermally Annealed Nanostructured CVD-obtained TiO_2 Films - M. Lueiae Laveeviæ (University of Split), D. Posedel, and A. Turkoviae (Institute "Ruder Boskoviae")
o2189 MOCVD of Copper/Copper Oxide Nanowires by High Supersaturation Ratio and Seed Layer - Y. Chang, C. Sung, M. Hsieh, and C. Hsiao (Lunghwa University of Science and Technology)
o2190 MOCVD of Nanocrystalline Fe_2O3-ZrO2 and Fe2O3-Y2O3-ZrO2 Thin Films - G.A. Battiston, R. Gerbasi, D. Berto (Istituto di Chimica Inorganica e delle Superfici del C.N.R), D. Barreca (Istituto di Scienze e Tecnologie Molecolari del C.N.R. and INSTM), and E. Tondello (Universita di Padova)
o2191 Development of Zinc Oxide Nanosctructure in MOCVD - Y. Chang, H. Lu, Y. Hung, C. Lee, J. Qiu, and X. Li (Lunghwa University of Science and Technology)
o2192 Nano-structures of Group-III Nitrides by MOCVD using Molecular Precursors - J. Khanderi, A. Wohlfart, H. Parala, A. Devi, and R. Fischer (Ruhr-Universitat Bochum)
o2193 Nanoscale CeO2-ZrO2 Thin Films: A Combined Approach by CVD and Sol-Gel Routes - L. Armelao, D. Barreca, L. Bigliani, G. Bottaro, A. Gasparotto, and E. Tondello (Padova University)
o2194 Growth of Si and Ge Quantum Dots on Insulators by CVD - T. Baron (CNRS/LTM), F. Mazen (CNRS/LPM), L. Perniola (Politecnico di Milano), B. Pelissier (CNRS/LTM), J.-M. Hartmann, and J.-F. Damlencourt (CEA)
o2195 CVD-Based Preparation Routes of Single-Walled Nanotubes with Controlled Architectures - M.L. Terranova, S. Orlanducci, V. Sessa (University of Rome "Tor Vergata" and INFM), and S. Botti (ENEA)
o2196 Nanocrystalline SiCxNy Films: RPECVD Synthesis and Transformation Under Thermal Annealing - N. Fainer, M. Kosinova, Y. Rumyantsev, B. Ayupov, B. Kolesov, F. Kuznetsov, A. Boronin, S. Koscheev (RAS), M. Terauchi, K. Shibata, and F. Satoh (Tohoku University)
o2197 Microcoiled Carbon Fibers Formed by Using Ni-Cu Catalysts in CVD Process - X. Chen, K. Takeuchi, S. Yang, Y. Hishikawa, and S. Motojima (Gifu University)
o2198 Vapor Phase Preparation of Carbon Microcoils/Nanocoils Under Concerted Amplification of Magnetic Field and their Properties - S. Motojima, K. Kuzuya, S. Yang, X. Chen (Gifu University), T. Hashishin, H. Iwanaga (Nagasaki University), S. Shimada (Hokkaido University), H. Saito (Nagaoka University of Technology), N. Yoshikawa, T. Awaji, and K. Watanabe (Tohoku University)
o2199 Carbon Micro/Nanocoils Produced by Using WS2 Catalyst in CVD Process - S. Yang, X. Chen, and S. Motojima (Gifu University)

Level 2 Hallway, Le Palais des Congres

Technical Exhibit and Tuesday Evening Poster Session, Diffusion Barriers and CVD of Copper

Co-Chairs: M. Allendorf and F. Maury

o2200 MOCVD Grown Metal-Insulator-Semiconductor Field-Effect Transistor (MISFET) Hydrogen Sensor - K.-W. Lin (Chien Kuo Institute of Technology), H.-M. Chuang, C.-Y. Chen, C.-T. Lu, Y.-Y. Tsai, and W.-C. Liu (National Cheng-Kung University)
o2201 New Copper(I) Precursors for the Deposition of Copper Films - K. Kohler, J. Eichhorn (Merck KGaA), F. Meyer (Universitat Gottingen), and D. Mayer (Merck KGaA)
o2202 Polycrystalline Copper Whiskers and Networks Observed in MOCVD - Y. Chang, Y. Chen, R. Wu, K. Chen, and J. Lin (Lunghwa University of Science and Technology)
o2203 Copper Dots Deposition Using New Precursors [CuI(hfac)]2(DVTMSO) and [CuI(hfac)]2(HD) - S.-W. Kang, J.-H. Yun, S.-W. Rhee, V. Krisyuk, and A. Turgambaeva (Pohang University of Science and Technology)
o2204 Growth and Characterization of Ti-Al-N Films Prepared by Plasma-Enhanced Atomic Layer Deposition of TiN and AlN - Y.J. Lee and S.-W. Kang (Korea Advanced Institute of Science and Technology)
o2205 MOCVD of CrSixCy Thin Films: Study of Their Potentiality as Diffusion Barrier - F.-D. Duminica and F. Maury (UMR-5085)
o2206 Cr3(C,N)2 Thin Films Grown by MOCVD as Barrier Against Copper Diffusion - C. Gasqueres and F. Maury (UMR-5085)
o2207 Cu Barrier Property of Low-k Film with k=3.5 Deposited by PE-CVD using HMDSO and N2O Gases - Y. Shioya, Y. Nishimoto (Semiconductor Process Laboratory), T. Ohdaira, R. Suzuki (National Institute of Advanced Industrial Science and Technology), and K. Maeda (Semiconductor Process Laboratory)
o2208 Niobium Nitride Film Growth by Plasma CVD - A. Ganine and G. Vajenine (Max-Planck-Institut fuer Festkoerperforschung)
o2209 Fabrication of Midgap Metal Gates compatible with very thin SiO2 films using Low Pressure Chemically Vapor Deposited Tungsten films - D. Kouvatsos, V. Ioannou-Sougleridis, S. Tsevas, D. Davazoglou, F. Christoforou, and C. Boukouras (Institute of Microelectronics)
o2210 Silver Thin Films Deposited by MOCVD - M. Abourida (ESPCI), H. Guillon, C. Jimenez, J.-M. Decams (JIPELEC), O. Valet, and P. Doppelt (ESPCI)
o2211 Comparative Study of MOCVD Platinum Thin Films Obtained by the Use of Liquid Injection System or a Conventional Bubbler - O. Valet, P. Doppelt (ESPCI-CNRS), P. Baumann, M. Schumacher (AIXTRON AG), F. Beuran (Universite Paris 12), and H. Guillon (JIPELEC)
o2212 Copper Film Deposition with Cu(dpm)2 Precursor V. V. - V. Bakovets, T. Levashova, I. Dolgovesova, and E. Maximovski (RAS)
o2213 Copper Thin Films Deposition by Atmospheric Aerosol CVD - J.-L. Deschanvres (ENSPG)

Wednesday, April 30, 2003

Room 251, Level 2, Le Palais des Congres

Conducting, Semi-conducting or Magnetic Materials

Co-Chair: E. Blanquet

8:002214 Chemical Vapor Deposition of Cobalt on Si(100) - D. Greve, Q. Zhao, K. Barmak, and R. Singanamalla (Carnegie Mellon University)
8:202215 Continuous and Granular Metal Films Prodiced by Chemical Vaopr Deposition with Chelate Compound Precursors - V. Bakovets (RAS)
8:402216 LPCVD of Silicon Germanium Poly-Crystalline Films - P. Zagwijn, S. Van Aerde, and E. Oosterlaken (ASM International N.V.)
9:002217 Growth and Formation of Inverse GaP and InP Opals - H.M. Yates, D.E. Whitehead, M.G. Nolan, M.E. Pemble (University of Salford), E. Palacios-Lidon (Instituto de Ciencia de Materiales de Madrid), S. Rubio, F.J. Meseguer (Universidad Politecnica de Valencia), and C. Lopez (Instituto de Ciencia de Materiales de Madrid)
9:202218 Zinc Amide Compounds as Potential Precursors for the Synthesis of Sinc Nitride - E. Maile, A. Devi, and R. Fischer (Ruhr Universitat Bochum)
9:402219 InP/InGaAs Tunneling-Emitter Bipolar Transistor (TEBT) with a Step-Graded Collector Structure Prepared by MOCVD - C.-Y. Chen (National Cheng-Kung University), K.-W. Lin (Chien Kuo Institute of Technology), W.-H. Chiou, H.-M. Chuang, J.-Y. Chen, and W.-C. Liu (National Cheng-Kung University)
10:00 Twenty-Minute Intermission

MOCVD of Miscellaneous Materials

Co-Chairs: A. Jones and W. Rees

10:202220 Chemical Vapor Deposition of Co3O4 on Honeycomb Substrates for Catalytic Applications - E. Fischer Rivera (Universitat Bielefeld), B. Atakan (Universitat Duisburg), and K. Kohse-Hoinghaus (Universitat Bielefeld)
10:502221 Low Pressure Chemical Vapor Deposition of Silicon Nitride Using Mono- and Disilylamine - C. Dussarrat, J.-M. Girard, T. Kimura (Air Liquide Laboratories), N. Tamaoki, and Y. Sato (Toshiba Corporation)
11:102222 Titanium Phosphide Coatings from the Atmospheric Pressure CVD Reaction of TiCl_4 with PRxH3-x (R = Cyhex; or R = SiMe3 where x = 3) - C. Blackman, C. Carmalt, S. O'Neill, I. Parkin (University College London), K. Molloy, and L. Apostolico (University of Bath)
11:302223 Study of Deposition Processes in PZT Films Grown by Liquid Delivery MOCVD - M. Kurasawa (Fujitsu Laboratories LTD.), M. Nakabayashi, K. Nakamura (Fujitsu LTD.), K. Maruyama (Fujitsu Laboratories LTD.), T. Eshita (Fujitsu LTD.), and K. Kurihara (Fujitsu Laboratories LTD.)
11:502224 MOCVD of Ir-Al_2O4 Protective Coatings - I.K. Igumenov, N.V. Gelfond, N.B. Morozova, P.P. Semyannikov, S.V.T. Trubin, V.S. Danilovich (Russian Academy of Sciences), and L. Gimeno-Fabra (EADS Germany GmbH)

Thursday, May 1, 2003

Non Conventional CVD

Co-Chairs: T. Besmann and M. Hitchman

8:002225 Atomic Layer Deposition of Thin Films for Microelectronics - M. Ritala and M. Leskela (University of Helsinki)
8:302226 Atomic Layer Deposition (ALD) of Oxides, Nitrides, Carbides, and Metals - R.G. Gordon (Harvard University)
9:002227 Inside-Outside Densification of Carbon Fiber Preforms by Isothermal, Isobaric CVI - W.G. Zhang and K.J. Huttinger (Universitat Karlsruhe)
9:202228 Pyrolysis of Mixed Aerosols : A Versatile CVD-based Process to Produce High Yields of Clean and Long Aligned Carbon Nanotubes - M. Mayne-L'Hermite, X. Armand, D. Porterat, and C. Reynaud (CEA-CNRS)
9:402229 Chemical Vapor Deposition in Spouted Bed Reactors - F. Juarez L., M.C. Lafont, F. Senocq, and C. Vahlas (CNRS)
10:10 Twenty-Minute Intermission

Process Control and Diagnostics

Co-Chairs: T. van Mol and M. Allendorf

10:302230 Optical Probes of Atmospheric Pressure of CVD Systems - M. Pemble (University of Salford)
11:002231 MOCVD Materials for Electronic and Optoelectronic Application - K. Christiansen, M. Luenenbuerger, Y. Dikme, B. Schineller, and M. Heuken (Aixtron AG)
11:202232 In Situ Monitoring of Thin Film Oxygen Diffusion by Macroscopic Curvature - A.B. Tripathi, D.A. Boyd, and D.G. Goodwin (California Institute of Technology)
11:502233 Uniform Molecular Flux in a Vertical Reactor with Pulsed Transition Regime Gas Flow - S. Krumdieck, J.-Y. Lee, and H. Raatz (University of Canterbury)
12:102234 A Study of A ZnO MOCVD Mechanisms by Gas Phase Transmission FTIR - Y. Chang, Y. Huang, R. Chang, X. Su, and J. Lai (Lunghwa University of Science and Technology)

Assisted Methods

Co-Chairs: L. Delzeit and M. Pemble

13:402235 Laser-Direct-Write Creation of 3-Dimensional Micro-Cages for Contact Free-Handling of Neutral Species in Solution - M. Stuke, K. Mueller (Max-Planck-Institut f. Biophys), T. Mueller, and G. Fuhr (Humboldt Universitaet)
14:102236 Laser-Induced Carbon CVD using an Open-Air Reactor - K.H. Kwok and W.K.S. Chiu (University of Connecticut)
14:302237 Titanium Dioxide Thin Film Deposition on Polymer Substrates by Light Induced Chemical Vapor Deposition - E. Halary-Wagner, F. Wagner, and P. Hoffmann (Swiss Federal Institute of Technology Lausanne)
14:502238 Atmospheric Pressure Deposition of Silica Thin Films by Photo-CVD Using Vacuum Ultraviolet Excimer Lamp - Y. Maezono, K. Nishi, A. Yokotani, and K. Kurosawa (Miyazaki University)
15:102239 Physical Properties of SiO_2 Layers Deposited at Room Temperature by a Combination of ECR Plasma and High-Speed Jet of Silane - G. Isai, J. Holleman, H. Wallinga (University of Twente), P. Woerlee (Royal Philips Electronics), M. Modreanu (National Microelectronics Research Centre), and C. Cobianu (Valahia University from Targoviste)
15:302240 Influence of the Microwave Power in an ECR-PECVD Reactor on Dielectric-cap Induced Blue-shift in 1.55 um Laser Structures - J. Wojcik, B. Robinson, D.A. Thompson, and P. Mascher (McMaster University)
15:502241 Study of Precursors for Atmospheric Pressure Plasma Enhanced CVD (AP-PECVD)of Silicon Oxide Films - S.E. Alexandrov (St Petersburg State Technical University), M.L. Hitchman, and N. McSporran (University of Strathclyde)
16:10 Twenty-Minute Intermission
16:302242 Low Temperature Processing of SiO2 Thin Films by PECVD Technique Using an Inductively-Coupled High-Density RF Plasma Source - P. Joshi, S. Droes, J. Flores, T. Voutsas, and J. Hartzell (SHARP Laboratories of America, Inc.)
16:502243 Plasma CVD of SiC/N: Experimental and Theoretical Results - H. Stafast (Darmstadt University of Technology), C. Berger, E. Broszeit (State Materials Testing Institute), F. Falk (Darmstadt University of Technology), H. Hoche (State Materials Testing Institute), E. Kroke (Darmstadt University of Technology), P. Kroll (RWTH), R. Riedel, V. Uhlitzsh, and Y. Zhou (Darmstadt University of Technology)
17:102244 Bias Power Effect on Property of PE-CVD Low-k SiOCH Film - Y. Shioya (Semiconductor Process Laboratory), T. Ohdaira, R. Suzuki (National Institute of Advanced Industrial Science, and Technology), and K. Maeda (Semiconductor Process Laboratory)
17:302245 Low Temperature Deposition of Microcrystalline Silicon by Plasma Assisted CVD - A. Grimaldi, A. Sacchetti, M. Losurdo, M. Ambrico, P. Capezzuto, and G. Bruno (Institute of Inorganic Methodologies and of Plasmas)

Friday, May 2, 2003

Nanostructured Materials

Co-Chairs: D. Goodwin and G. Battiston

8:002246 CVD Growth of Carbon Nanotubes: Catalyst, Growth, and Structure - L. Delzeit (NASA Ames Research Center), I. McAninch (University Of Delaware), K. Matthews (Berkeley), H.T. Ng, R. Stevens, and M.M. Meyya Meyyappan (NASA Ames Research Center)
8:302247 Synthesis of Carbon Nanotubes on Metallic Substrates by PECVD and Thermal CVD - D. Park, Y.H. Kim, and J.K. Lee (Korea Institute of Science and Technology)
8:502248 Macroscopic and Microscopic Investigations on the LPCVD Fabrication of Silicon Nanodots on Oxidized Silicon Wafers - E. Blanquet, P. Donnadieu, M.-C. Schouler, J.-P. Simon, M. Maret, M. Pons (Domaine Universitaire), V. Cocheteau, B. Caussat (LGC/ENSIACET/INPT), E. Scheid (LAAS), P. Mur, and M.-N. Semeria (CEA/GRE)
9:102249 Nanoscale ZnS and CdS Thin Films from Single-Source Molecular Precursors - L. Armelao, D. Barreca, G. Bottaro, A. Gasparotto, C. Maragno, C. Sada (Padova University), T.R. Spalding (University College, Cork), and E. Tondello (Padova University)
9:302250 Nanostructured Cerium Dioxide Thin Films by MOCVD: Influence of the Substrate Nature and Processing Parameters - G. Malandrino (Universita di Catania), R. Lo Nigro (IMM), R. Toro, and I. Fragala (Universita di Catania)
9:502251 Preparation of Thin Films and Nanoparticles of Zinc Oxide Using Alkylzinc Alkoxides - W. Cho, K. Sung, K.-S. An, S.S. Lee, C.G. Kim, and Y. Kim (Korea Research Institute of Chemical Technology)
10:10 Twenty-Minute Intermission
10:302252 Nanostructured TiO_2 films deposited by MOCVD on Si-substrates - U. Backman, A. Auvinen, and J. Jokiniemi (VTT Processes)
10:502253 Deposition Mechanism and Characterization of Nanocrystalline TiO2 Films Produced Using the ESAVD Method - X. Hou and K.-L. Choy (The University of Nottingham)
11:102254 Photothermal Aerosol Synthesis of and Photoluminescence from Silicon Nanoparticles - X. Li, Y. He, and M. Swihart (University at Buffalo)
11:302255 Lead Containing Perovskite Films and Superlattices Grown by MOCVBD in Self-Tuning Mode - A. Bosak, O. Gorbenko, A. Kaul, N. Mirin (Moscow State University), S. Gudenko (Kurchatov Institute), J.-P. Sénateur, C. Dubourdieu (Institut National Polytechnique de Grenoble), and I. Graboy (Moscow State University)

Diffusion Barrier and CVD of Copper

Co-Chairs: A. Devi and P. Doppelt

13:402256 Thermodynamic and Experimental Approaches of Barrier Materials Synthesis for Silicon IC Technology - E. Blanquet, B. Chenevier, E. Ramberg, C. Bernard, and R. Madar (Domaine Universitaire)
14:102257 Deposition and Treatment of Titanium Based Barrier Layers by MOCVD - R. Ecke (Chemnitz University of Technology), S. Riedel (Infineon Technologies Dresden), S.E. Schulz, T. Gessner (Chemnitz University of Technology), E. Lipp, and M. Eizenberg (Technion - Israel Institute of Technology)
14:302258 Nitrogen-free Cu Barrier SiOCH Film with k=4.3 - Y. Nishimoto, Y. Shioya, H. Shimoda (Semiconductor Process Laboratory), T. Ohdaira, R. Suzuki (National Institute of Advanced Industrial Science, and Technology), and K. Maeda (Semiconductor Process Laboratory)
14:502259 Structural Comparison Between Cu(hfac)(VTMS) and Cu(hfac)(MHY) : An Answer to Differences in Copper Film Deposition - M. Joulaud (Cea-Leti), L. Omnes (Merck KgaA), T. Mourier (Cea-Leti), D. Mayer (Merck KgaA), and P. Doppelt (ESPCI)
15:102260 MOCVD Of Copper Films from Bis(ethyl-3-oxo-butanoato)copper(II): Experiment and Thermodynamic Analysis - S. Mukhopadhyay, K. Shalini (Indian Institute of Science), A. Devi (Ruhr-Universität Bochum), and S.A. Shivashankar (Indian Institute of Science)
15:302261 Preparation of Cu Thin Films by MOCVD Using Novel Organometallic Cu(II) Precursors - C.G. Kim, J.W. Park, T.-M. Chung, S.S. Lee, and Y. Kim (Korea Research Institute of Chemical Technology)
15:502262 Low Temperature Cu Thin Film Growth Using Cycles of Alternate Supply of (HFAC)Cu(I)(DMB) and Ar Purge Gas - K. Kim and K. Yong (Pohang Univesity of Science and Technology)
16:102263 Thin Copper Films Prepared by CVD from (HFA)Cu 1.5-COD - A. Panin, A. Shugurov, T. Liskovskaya, I. Igumenov (Russian Academy of Sciences), I. Ivonin (Tomsk State University), and K. Oskomov (Russian Academy of Sciences)