203rd Meeting - Paris, France
April 27-May 2, 2003
PROGRAM INFORMATION
V1 - CVD XVI and EUROCVD 14
High Temperature Materials/Dielectric Science and Technology/Electronics/EUROCVD
Monday, April 28, 2003
Room 251, Level 2, Le Palais des Congres
Fundamental Aspects of CVD
Co-Chairs: F. Maury and F. Teyssandier
Time | Abs# | Title |
10:20 | 2030 |
Atomistic Simulations of Atomic Layer Deposition of High-K Dielectrics - C. Musgrave, Y. Widjaja, J. Han (Stanford University), and E. Garfunkel (Rutgers University) |
10:50 | 2031 |
Surface and Gas Phase Chemistry of the MOCVD of ZnSe - D. Moscatelli, C. Cavallotti, M. Masi, and S. Carra (Politecnico di Milano) |
11:10 | 2032 |
Investigation of Gas Phase Decomposition Mechanisms in GaN-CVD by Theoretical Methods: The "Entropic Challenge" - R. Schmid, B. Wolbank, and D. Basting (Technische Universitaet Muenchen) |
11:30 | 2033 |
Decomposition, Oxidation, and Hydrolysis Kinetics of Monobutyltintrichloride - T. van Mol (TNO TPD) and M. Allendorf (Sandia National Laboratories) |
11:50 | 2034 |
Dependence of Thermodynamic and Kinetic Parameters of CVD-Processes From Using Chelates Structure - T.V. Tabenskaia (Taras Shevchenko National University), A.I. Gerasimchuk, and Y.A. Mazurenko (NAS Ukraine) |
Fundamental Aspects of CVD
Co-Chairs: F. Maury and F. Teyssandier
Modeling and Simulation
Co-Chairs: F. Teyssandier and C. Kleijn
Time | Abs# | Title |
14:20 | 2037 |
From Pycrocarbon CVD to Pyrocarbon CVI - G.L. Vignoles, F. Langlais, N. Reuge, H. Le Poche, C. Descamps, and A. Mouchon (University Bordeaux 1) |
14:50 | 2038 |
An Open-Source, Extensible Software Suite for CVD Process Simulation - D. Goodwin (California Institute of Technology) |
15:10 | 2039 |
Heat Transfer in Very Low Pressure Stagnation Flow CVD Reactors - R. Dorsman and C.R. Kleijn (Delft University of Technology) |
15:30 | 2040 |
Modeling of Transport and Kinetic Processes in an Atomic Layer Deposition Reactor - B. Devulapalli (Fluent Inc.), J. McInerney (Novellus Systems Inc.), and M. Dharan (Fluent Inc.) |
15:50 | |
Twenty-Minute Intermission |
16:10 | 2041 |
Aerosol Dynamics Modeling and Computational Fluid Dynamics of a Laser-Driven Nanoparticle Synthesis Reactor - S. Talukdar, C. Ng, and M. Swihart (University at Buffalo) |
16:30 | 2042 |
Predictive Model Extraction from Commercial Scale Poly-silicon LPCVD Reactor - R. Shimizu, M. Ogino (Fuji Electric Corporate R and D, Ltd.), M. Sugiyama, and Y. Shimogaki (University of Tokyo) |
16:50 | 2043 |
Tin Oxide Deposition in a Cold-wall CVD Reactor: Computations and Experiments - T.C. Xenidou, A.G. Diamantis, A.G. Boudouvis, D.M. Tsamakis, and N.C. Markatos (National Technical University of Athens) |
17:10 | 2044 |
Critical Issues in Group-III Nitride MOVPE Modeling - R. Talalaev, E. Yakovlev, A. Vorob'ev (Soft-Impact Ltd.), and Y. Makarov (STR, Inc.) |
17:30 | 2045 |
Local Deposition Rates of Greek{a}-Al_2O3 from AlCl3-CO2-H2-HCl Derived with Phoenics-CVD from Thermogravimetric Measurements in a Hot-Wall Reactor with Long Isothermal Zone - J. Muller and D. Neuschütz (Rheinisch-Westfalische Technische Hochschule Aachen) |
17:50 | 2046 |
Towards 3D-Simulation of Gas Phase Reactions Involved in the Deposition of Alpha-Al2O3 - J. Contreras Espada, J. Janicka, and A. Sadiki (TU-Darmstadt) |
Tuesday, April 29, 2003
Materials Modeling, Material Properties
Co-Chairs: M. Swihart and C. Cavalloti
Time | Abs# | Title |
8:00 | 2047 |
Use of Surfactants in Organometallic Vapor Phase Epitaxy - G.B. Stringfellow, D.C. Chapman, R.R. Wixom (University of Utah), B.J. Kim, and T.Y. Seong (Kwangju Institute of Science and Technology) |
8:30 | 2048 |
Arrangement of Silicon and Oxygen Atoms in Low Pressure Chemically Vapor Deposited SiO2 Films by SiH4 - O2 and TEOS Chemistries: Comparison with Thermally Grown SiO2 Films - V. Vamvakas, A. Pappa, and D. Davazoglou (Institute of Microelectronics) |
8:50 | 2049 |
Mechanical Characterisation of Zirconium Oxide Thin Films Deposited By Chemical Vapor Deposition - O. Bernard, L. Rapenne, A.M. Huntz, M. Andrieux (Universite Paris Sud Orsay), and S. Poissonnet (CEA-Saclay) |
9:10 | 2050 |
Electrochromic Characterization of Mo - W Mixed Oxides and MoO3 Thin Films - K. Gesheva, T. Ivanova (BAS), A. Kovalchuk, B. Gurtovoi, and O. Trofimov (RAS) |
9:30 | 2051 |
Synthesis and Structural Characterizations of Vanadium Oxides Thin Films Prepared by MOCVD and ALD - A. Mantoux, H. Groult (UPMC), P. Doppelt (ESPCI), J.C. Badot (ENSCP), E. Balnois (UPMC), N. Baffier, and D. Lincot (ENSCP) |
9:50 | 2052 |
Evaluation of TiN and HfN as Interlayers between Alumina Diffusion Barrier Coatings and Gas Turbine Blade Base Material - J. Muller (Rheinisch-Westfalische Technische Hochschule Aachen), K. Kohse-Hoinghaus (Universitat Bielefeld), B. Atakan (Universitat Duisburg), and J.M. Schneider (Rheinisch-Westfalische Technische Hochschule Aachen) |
10:10 | |
Twenty-Minute Intermission |
Oxide Compunds
Co-Chairs: R. Fischer and M. Morstein
Time | Abs# | Title |
10:30 | 2053 |
Films of Metaloxides and Composites through Single Source Precursor CVD - M. Veith, K. Andres (Universitat des Saarlandes), S. Mathur, H. Shen (INM), K. Valtchev, Y. Wolf, and M. Haas (Universitat des Saarlandes) |
11:00 | 2054 |
Epitaxial Stabilization in MOCVD of Oxide Thin Films - A. Kaul, O. Gorbenko, I. Graboy, M. Novozhilov, A. Bosak, A. Kamenev, S. Antonov, I. Nikulin, A. Mikhailov, and M. Kartavtzeva (Moscow State University) |
11:20 | 2055 |
MOCVD of Oxides on Textured Ni for High Temperature Superconducting Tapes - O. Stadel, M. Liekefett, J. Schmidt, G. Wahl (Technical University Braunschweig), O. Gorbenko, and A. Kaul (Moscow State University) |
11:40 | 2056 |
Aluminium Oxide Thin Film Grown by Low Pressure MOCVD using Aluminium Acetylacetone and Nitrous Oxide - M.P. Singh (Indian Institute of Science), T. Shripathi (Inter University Consortium), and S.A. Shivashankar (Indian Institute of Science) |
12:00 | 2057 |
Parametric Study of the CVD of YSZ From Organometallic Precursors - T. Besmann (Oak Ridge National Laboratory), V. Varanasi, T. Anderson (University of Florida), and T. Starr (University of Louisville) |
High-K Materials
Co-Chairs: M. Allendorf and R. Gordon
Time | Abs# | Title |
14:00 | 2058 |
Balancing Reactor Fluid Dynamics and Deposition Kinetics to Achieve Compositional Variation in Combinatorial Chemical Vapor Depositions - W. Gladfelter, B. Xia, F. Chen, S. Campbell, and J. Roberts (University of Minnesota) |
14:30 | 2059 |
Novel Precursors for High K Dielectrics and Metal Electrodes Part II: Deposition - J. Atwood, D. Hoth, D. Moreno (University at Buffalo), C. Hoover, S. Meiere, D. Thompson, G. Piotrowski, M. Litwin, and J. Peck (Praxair Electronics) |
14:50 | 2060 |
Chemical Vapor Deposition of Zirconium Tin Titanate: A Dielectric Material for Potential Microelectronic Applications - E. Mays, D. Hess, and W. Rees (Georgia Tech) |
15:10 | 2061 |
Hafnium Titanium Silicate High-k Dielectric Films Deposited by MOCVD using Novel Single Source Precursors - S. Zuercher (Swiss Federal Institute of Technology (ETH)), M. Morstein (PLATIT AG), M. Lemberger, and A. Bauer (Fraunhofer Institut fur Integrierte Schaltungen, , Bauelementetechnologie) |
15:30 | 2062 |
Development of Improved Precursors for the MOCVD of Bismuth Titanate - A.C. Jones (University of Liverpool), P.A. Williams (Epichem Limited), N.L. Tobin, P.R. Chalker, P. Marshall (University of Liverpool), P.A. Lane, P.J. Wright, P. Donohue (QinetQ), L.M. Smith, and H.O. Davies (Epichem Limited) |
15:50 | |
Twenty-Minute Intermission |
16:10 | 2063 |
Effect of Solvent on Growth of Ru and RuO_2 Films by Liquid Injection MOCVD - K. Frohlich, K. Husekova, D. Machajdik, J. Soltys, V. Patoprsty (SAS), P. Baumann, J. Lindner, and M. Schumacher (AIXTRON AG) |
16:30 | 2064 |
Utilizing MOCVD for High-Quality Zirconium Dioxide Gate Dielectrics in Microelectronics - S. Harasek, H. Wanzenboeck, W. Brezna, J. Smoliner, E. Gornik, and E. Bertagnolli (Vienna University of Technology) |
Conducting, Semi-Conducting or Magnetic Materials
Co-Chairs: M. Pons and E. Blanquet
Time | Abs# | Title |
16:50 | 2065 |
CVD-Grown Thin Films of Tetracyanoethylene-Based Room-Temperature Ferrimagnets - H. Casellas, L. Valade, D. De Caro, P. Cassoux (CNRS), F. Villain (Universite Pierre et Marie Curie), and D. Gatteschi (Polo Scientifico) |
17:10 | 2066 |
Chemical Vapor Deposition of Cobalt for Magnetic Applications - N. Deo, J. Montgomery, M. Bain, and H. Gamble (The Queen's University of Belfast) |
17:30 | 2067 |
CVD of Transition Metals from Metalorganic Complexes - N. Popovska, A. Schneider, G. Emig, U. Zenneck, and C. Topf (University Erlangen-Nuremberg) |
17:50 | |
Ten-Minute Intermission |
CHEMKIN Demonstration
Time | Abs# | Title |
18:00 | |
CHEMKIN Demonstration |
Hall Maillot, Level 2, Le Palais des Congres
Technical Exhibit and Tuesday Evening Poster Session, Fundamental Aspects of CVD
Co-Chairs: M. Allendorf and F. Maury
Time | Abs# | Title |
o | 2068 |
Thermodynamics and Reaction Pathways in the Decomposition, Oxidation, and Hydrolysis of Monobutyltintrichloride - M. Allendorf, I. Nielsen (Sandia National Laboratories), C. Melius (Lawrence Livermore National Laboratory), and T. Van Mol (TNO TPD) |
o | 2069 |
A DSC Study on the Submliation and Decomposition of ZnO CVD Precursor, Zinc Acetylacetonate - Y. Chang, J. Hsieh, J. Lin, C.A. Wang, L. Hong, and Z. Shen (Lunghwa University of Science and Technology) |
o | 2070 |
Mechanism of Oxygen Contamination in PECVD a-Si:H Films - M. Hiramatsu, Y. Kimura, M. Jyumonji, M. Nishitani, and M. Matsumura (Advanced LCD Technologies Development Center Co., Ltd.) |
o | 2071 |
A Correlation between Volatility and Molecular Structure: Spectroscopic Estimation of the Temperature for Onset of Sublimation in Metal beta-Diketonates - M. Das and S.A. Shivashankar (Indian Institute of Science) |
o | 2072 |
Thermal Decomposition of Ti Precursors in Gas Phase - J.S. Heo, Y.S. Cho, J.C. Kim, and S.H. Moon (Seoul National University) |
o | 2073 |
Effect of Magnetic Field on Crystallization Process of Amorphous Si Thin Film Using Metal-Induced Lateral Crystallization - M.S. Kim, G.-B. Kim, Y.-G. Yoon, and S.K. Joo (Seoul National University) |
o | 2074 |
The Problem of the Storage of Alkaline Earth Precursors Containing 2,2,6,6-Tetramethylheptanedione -3,5 - V. Vertlib, A. Drozdov, I. Timokhin, S. Troyanov (Moscow State University), C. Pettinari, F. Marchetti (Universita degli Studi di Camerino), Y.-S. Min, and D. Kim (Samsung Advanced Institute of Technology) |
o | 2075 |
Magnesium Acetylacetonate-Dipivaloylmethanate as a New Precursor for MOCVD of MgO Thin Films - O. Kotova, A. Botev, O. Gorbenko, N. Kuzmina, A. Kaul (Moscow State University), I. Malkerova, and A. Alikhanyan (Kurnakov Institute of General and Inorganic Chemistry) |
o | 2076 |
Mechanisms of Thermal and Photo Assisted MOCVD Processes from M(hfac)2tetraglyme (M=Sr,Ba) Precursors - G. Condorelli, G. Anastasi, S. Giuffrida, and I. Fragala (Universita di Catania and INSTM UdR di Catania) |
o | 2077 |
Heat and Mass Transfer of Chemical Deposition of Zinc-Selenide Layers - V.G. Minkina (National Academy of Sciences) |
o | 2078 |
Gas-Phase Kinetic Modeling in the AlCl3-CO2-H2-HCl System in View of the Chemical Vapor Deposition of Al2O3 - P. Tan (Portovesme s.r.1), J. Muller, and D. Neuschutz (Rheinisch-Westfalische Technische Hochschule Aachen) |
Technical Exhibit and Tuesday Evening Poster Session, Modeling and Simulation
Co-Chairs: M. Allendorf and F. Maury
Time | Abs# | Title |
o | 2079 |
Modeling and Simulations of the High Pressure Organometallic Chemical Vapor Deposition of InN Using Trimethylindium and Ammonia - S.D. McCall (Spelman College) and K.J. Bachmann (North Carolina State University) |
o | 2080 |
Procedure and Related Tools Proposed for the Modeling Gas-Phase Mechanisms Involved in Chemical Vapor Deposition: Application to CVD of SiC - S. De Persis, A. Dollet, and F. Teyssandier (Institut de Science et de Genie des Materiaux et Procedes) |
o | 2081 |
Hybrid Model-Base Predictive and Proportional-Integral-Derivative Temperature Control System for LPCVD Processes - Z. Liu and F. Huussen (ASM International N.V.) |
o | 2082 |
Simulation of Silicon Thermal Oxidation and Stress Analysis in Flash memory Technology - A. Veneroni, A. Beretta, and M. Masi (Politecnico di Milano) |
o | 2083 |
Simulation of Epitaxial Silicon Deposition and Dopant Incorporation in an Industrial Barrel Reactor - M. Di Stanislao, G. Valente, S. Fascella, M. Masi, and S. Carra (Politecnico di Milano) |
o | 2084 |
Nonequlibrium Nondissipative Thermodynamics in Chemical Vapor Deposition - J.-T. Wang and D.W. Zhang (Fudan University) |
o | 2085 |
Study of the Automatic Modeling of Reaction Systems for Chemical Vapor Deposition Processes using Genetic Algorithms - T. Takahashi (Shizuoka University), K. Funatsu (Toyohashi University of Technology), and Y. Ema (Shizuoka University) |
o | 2086 |
Thermodynamic Optimisation of OMCVD Deposition of SrTiO_3 - E. Rangel Salinas, A. Pisch, C. Chatillon, and C. Bernard (Domaine Universitaire) |
o | 2087 |
Modeling of Thermo- and Mass Transfer Processes at Sublimation of Molecular Crystals of CVD Precursors - N.V. Gelfond, A.N. Cherepanov, A.N. Mikheev, V.K. Cherepanova, V.N. Popov, N.B. Morozova, and I.K. Igumenov (Russian Academy of Sciences) |
o | 2088 |
Modeling Analysis of SiC CVD in the Horizontal Hot Wall Reactors - A. Semennikov, R. Talalaev, A. Vorob'ev (Soft-Impact Ltd.), and Y. Makarov (STR, Inc.) |
Technical Exhibit and Tuesday Evening Poster Session, Materials Modeling, Materials Properties
Co-Chairs: M. Allendorf and F. Maury
Time | Abs# | Title |
o | 2089 |
Formation Mechanism of Local Thickness Profile of Silicon Epitaxial Film - H. Habuka, S. Fukaya, A. Sawada, T. Takeuchi, and M. Aihara (Yokohama National University) |
o | 2090 |
Optical Charaterization of Solid Phase Crystallization of Silicon Thin films Obtained be LPCVD - M. Modreanu (National Microelectronics Research Centre (NMRC)), M. Gartner (Institute of Physical Chemistry I.G. Murgulescu), C. Cobianu (Valahia” Univ. from Targoviste), and P. Hurley (National Microelectronics Research Centre (NMRC)) |
o | 2091 |
Nucleation and Coalescence Phenomena during Sublimation/Recondensation of CVD Precursor, Zinc Acetylacetonate, Obeserved by Polarized Optical Microscopy - Y. Chang, W. Chen, Z. Li, J. Jang, and J. Lin (Lunghwa University of Science and Technology) |
o | 2092 |
Interrelation of Bond Configuration and Optical Proerties of Mc-Sic Thin Films by Spectroscopic Ellipsometry - M. Losurdo, G. Ianuzzi, P. Capezzuto, and G. Bruno (IMIP-CNR) |
o | 2093 |
A New Process for the Solid Phase Crystallization of a-Si by the Thin Film Heaters - I.-Y. Jung, B.D. Kim, N.K. Song, and S.-K. Joo (Seoul National University) |
o | 2094 |
NMR, X-Ray and Mass Spectrometry Characterization of Some Heteroleptic Aluminum Alkoxide Complexes - D. Bau, G. Carta, F. Benetollo, G. Rossetto, S. Tamburini, P. Zanella (CNR-ICIS), and A. Turgambaeva (Institute of Inorganic Chemistry SB RAS) |
o | 2095 |
CVD of Thin Oxygen Permeable Membrane Films - R. Muydinov, M. Novojilov, O. Gorbenko, I. Korsakov, A. Kaul (Moscow State University), D. Stiens, S. Samoilenkov, and G. Wahl (TU Braunschweig) |
o | 2096 |
Electrochromism in WO_3 and WO3-Pt Doped Naophasic Thin Films Deposited by MOCVD on Gold Substrates - G. Carta (CNR-ICIS), P.L. Cavallotti (Politecnico di Milano), M. Filippin (CNR-ICIS), L. Magagnin (Politecnico di Milano), G. Rossetto, and P. Zanella (CNR-ICIS) |
o | 2097 |
Diamond Nucleation on Silicon using an Intermediate Temperature Step - L. Dumitrecsu Buforn and E. Blank (Ecole Polytechnique Federale de Lausanne) |
o | 2098 |
MOCVD of Tungsten Nitride Thin Films from The Imido Complex Cl4(CH3CN)W(NiPr): Effect Of NH3 On Film Properties - O. Bchir, T. Anderson, B. Brooks, and L. McElwee-White (University of Florida) |
o | 2099 |
Thermal Properties of Ir(I) Precursors: Acetylacetonato(1,5-Cyclooctadiene)Iridium(I) and (Methylcyclopentadienyl)(1,5-Cyclooctadiene)Iridium(I) - N.B. Morozova, N.V. Gelfond, P.P. Semyannikov, S.V. Trubin, I.K. Igumenov (Russian Academy of Sciences), and L. Gimeno-Fabra (EADS Germany GmbH) |
o | 2100 |
Electrical Properties of Tin Films Prepared by Plasma Assisted Atomic Layer Deposition Using Tetrakis(Dimethylamido)Titanium - D.-H. Kim, Y.J. Kim, and Y.S. Song (Chonnam National University) |
o | 2101 |
A Method to Extract Physical Properties from Raman Scattering Data in a CVD Reactor - J. Hwang (University of Florida), C. Park (Yeungnam University), M. Huang, and T. Anderson (University of Florida) |
o | 2102 |
The Electrical Characteristics of Polycrystalline Thin-Film Transistors Fabricated by the Thin Film Heaters - B.D. Kim, N.K. Song, I.Y. Jung, Y.G. Yoon, G.B. Kim, and S.K. Joo (Seoul National University) |
o | 2103 |
Iptical Thin Film Coatings of CVD Molybdenum Oxides and Investigations of Their Electrochromic Properties - T. Ivanova and K. Gesheva (Bulgarian Academy of Sciences) |
o | 2104 |
Mass-Transfer and Doping Processes of the Inside Surfaces of Cast Iron Sleeves Using the Electrolyte-Plasma Treatment - A. Pogrebnjak (Sumy Institute for Surface Modification) |
o | 2105 |
Comparison of Photovoltaic Performance of SnO2: F Coated Substrates Made Using APCVD with Different Sn Precursors - T. van Mol, F. Grob, K. Spee (TNO TPD), K. van der Werf, and R. Schropp (Utrecht University) |
o | 2106 |
Electrical Measurements of Thermal-Processed CVD-Si/SiGe Layers on Nanometer Thick SOI - K. Fujinaga (Hokkaido Institute of Technology) |
Level 2 Hallway, Le Palais des Congres
Technical Exhibit and Tuesday Evening Poster Session, Oxide Compounds
Co-Chairs: M. Allendorf and F. Maury
Time | Abs# | Title |
o | 2107 |
Pulsed Injection MOCVD of YSZ Thin Film for Membrane Applications - G. Garcia, J. Caro, J. Santiso, J.A. Pardo, A. Figueras (Institut de Ciencia de Materials de Barcelona), and A. Abrutis (Vilnius University) |
o | 2108 |
Growth of Al2O3 Films by Pulsed Injection MOCVD: Comparative Study of Precursor Materials - A. Abrutis, A. Bartasyte, V. Kubilius, A. Teiserskis (Vilnius University), P. Baumann, J. Lindner, M. Schumacher (Aixtron AG), and C. Dubourdieu (Domaine Universitaire) |
o | 2109 |
Effect of Solvent on the Deposition Behavior of MOCVD-Pb(Zr,Ti)O_3 Films Using Liquid-Deliver Source Supply System - H. Funakubo, G. Asano, T. Ozeki (Tokyo Institute of Technology), H. Machida (TRI Chemical Laboratory, Inc.), T. Yoneyama, and Y. Takamatsu (Japan Pionics Co., Ltd.) |
o | 2110 |
Key Factors to Grow (002) Zinc Oxide Films by MOCVD at 320oC and Atmospheric Pressure - Y. Chang, H. Lu, Y. Hung, C. Lee, J. Chen, and Y. Jian (Lunghwa University of Science and Technology) |
o | 2111 |
MOCVD of Ta2O5 using TaC12H30O5N as Precursor for Batch Fabrication - D. Briand, G. Mondin, S. Jenny (Universite de Neuchatel), O. Banakh (Ecole d'Ingenieurs du Canton de Neuchatel), P. van der Wal, and S. Jeanneret (Universite de Neuchatel) |
o | 2112 |
Investigation of Chemical Vapor Deposition Processes to Perform Dense- a-Alumina Coating on Superalloys - N. Bahlawane, S. Blittersdorf, K. Kohse-Hoinghaus (Universitat Bielefeld), B. Atakan (Gerhard-Mercator-Universitat Duisburg), and J. Muller (Institut fur Werkstoffchemie) |
o | 2113 |
Fabrication of Electrochromic Displays by Chemically Vapor Depositing and Patterning WO_3 Films on SnO2:F Covered Glass Substrates - M. Vassilopoulou, D. Pappas, I. Raptis, D. Davazoglou (NCSR "Demokritos"), and I. Kostis (Technological and Educational Institute of Pereaus) |
o | 2114 |
Pure and Lu(III)-Doped Nanocrystalline ZnO Films by CVD - D. Barreca (Istituto di Scienze e Tecnologie Molecolari del C.N.R), G.A. Battiston, D. Berto, A. Convertino (Istituto di Chimica Inorganica e delle Superfici del CNR), A. Gasparotto (Metallorganica ed Analitica and INSTM), R. Gerbasi (Istituto di Chimica Inorganica e delle Superfici del CNR), E. Tondello (Metallorganica ed Analitica and INSTM), and S. Viticoli (Istituto per lo Studio dei Materiali Nanostrutturati del C.N.R.) |
o | 2115 |
Growth of SnO2 Thin Films by ALD and CVD: A Comparative Study - J. Sundqvist and A. Harsta (Uppsala University) |
o | 2116 |
Sub-Estioquiometric Titania Layers Prepared by MOCVD for Photocatalysis Applications - I. Justicia, G. Garcia (ICMAB/CSIC), G. Battiston, R. Gerbasi (ICIS/CNR), A. Figueras (ICMAB/CSIC), and D. Dorignac (CEMES-CNR) |
o | 2117 |
Direct Injection Chemical Vapor Deposition Of Textured Zirconium Oxide Films - L. Rapenne, O. Bernard, A.M. Huntz, M. Andrieux, J.C. Poulin, H. Christian (Universite Paris Sud Orsay), and W. Seiler (ENSAM Paris) |
o | 2118 |
Strongly Oriented Thin Films of Er_2O3 Grown on Fused Quartz by Low-Pressure MOCVD - M.P. Singh, K. Shalini, and S.A. Shivashankar (Indian Institute of Science) |
o | 2119 |
Atmospheric Pressure Deposition of SiO_X Thin Films by Oxidation of Liquid HMDSO in Remote Plasma - S. Huet, T. Belmonte, T. Czerwiec, J.-M. Thiebaut (Ecole des Mines), and S. Bockel-Macal (Air Liquide) |
o | 2120 |
Novel Compounds For Use As TiO_2 Precursors In Thin Film Deposition By Liquid Injection Metal Organic Chemical Vapor Deposition. - C. Clarke, N. Boag, and M. Pemble (University of Salford) |
o | 2121 |
The Influence of Film Thickness On Photoactivity For TiO_2 Films Grown On Glass By CVD - M. Nolan, M. Pemble, and D. Sheel (University of Salford) |
o | 2122 |
PI-MOCVD Original Buffer Layers for YBa2Cu3O7-d Coated Conductors - S. Beauquis, S. Donet, F. Weiss, H. Roussel (CNRS), and A. Abrutis (Vilnius University) |
o | 2123 |
MOCVD of RuO2 Thin Films Using benzene-cyclohexadiene Ru - H.-N. Hwang, K.C. Han, K.-S. An, T.-M. Chung, Y. Kim, and Y. Kim (Korea Research Institute of Chemical Technology) |
o | 2124 |
Preparation of Tl-1223 Superconducting Films with High Transport Jc by Spray Pyrolysis - S. Phok, P. Galez, J.-L. Jorda (Universite de Savoie), F. Weiss, D. De Barros (LMGP-INPG), C. Peroz, and C. Villard (CNRS-CRTBT) |
o | 2125 |
Characterization of Vanadium Oxide Films Prepared by Atmospheric Pressure Chemical Vapor Deposition - D. Vernardou (University of Salford) |
o | 2126 |
Deposition of Mixed Conducting Oxides Thin Films on Porous Ceramic Substrates - V. Faucheux, J.-L. Deschanvres, S. Pignard, M. Audier (ENSPG-INPG), A. Teiserskis, A. Abrutis (Vilnius University), and S. Rushworth (Inorgtech Ltd.) |
o | 2127 |
Deposition of Thin Film Transition Metal Oxides (TMO) on Glass by Combustion Chemical Vapor Deposition (C-CVD) - G. Benito, M.J. Davis (University of Salford), S.J. Hurst (Pilkington Technology Management Ltd.), D.W. Sheel, and M.E. Pemble (University of Salford) |
o | 2128 |
Textured SrTiO_3 Thin Films on SiO2/Si by Liquid Injection MOCVD using a New Bimetallic Precursor - S. Lhostis (STMicroelectronics), M. Audier, J.P. Senateur, C. Dubourdieu, and L. Auvray (Domaine Univerisitaire) |
o | 2129 |
New Yttrium Precursors For YBCO Films Prepared By PI-MOCVD - J. Terrematte, S. Daniele, L. Hubert-Pfalzgraf (Universite Claude Bernard Lyon 1), J.M. Decams, S. Le Gall, H. Guillon (JIPELEC), S. Beauquis, P. Hoi-Pang, C. Jimenez, and F. Weiss (Universite de Grenoble) |
o | 2130 |
Buffer Layers and YBCO Growth on Ni RABiT Tapes - D. Sebastien, W. Francois, C. Patrick (ENSPG-LMGP), S. Dietmar (IFW), P. Werner (THEVA), and B. Christian Eric (NEXANS) |
o | 2131 |
MOCVD of TiO2 Thin Films Using a New Class of Metalorganic Precursors - R. Bhakta, U. Patil, and A. Devi (Ruhr Universitat Bochum) |
o | 2132 |
Coordination Compounds- Precursors for the Synthesis of Barium and Strontium Titanates by MOCVD-Technique - V.G. Sevast'yanov, N.T. Kuznetsov, D.V. Sevast'yanov, S.P. Ionov, Y.S. Ezhov (Russian Academy of Sciences), E.P. Simonenko (M.V.Lomonosov Moscow State Academy of Fine Chemical Technology), T. Kemmitt (Industrial Research Limited), and B.I. Petrov (Russian Academy of Sciences) |
o | 2133 |
MOCVD of ZRO2 Thin Films from Two Different B-Diketonate Precursors: Dependence of Microstructure and Growth Kinetics on the Precursor - M.S. Dharmaprakash and S.A. Shivashankar (Indian Institute of Science) |
o | 2134 |
Deposition of Yttruin or Lanthanum-Substituted Bismuth Titanate Films by Direct Liquid Injection- Metal Organic Chemical Vapor Deposition for Use in Non-Volatile Memories - S.-W. Kang and S.-W. Rhee (Pohang University of Science and Technology) |
Technical Exhibit and Tuesday Evening Poster Session, High-k Materials
Co-Chairs: M. Allendorf and F. Maury
Time | Abs# | Title |
o | 2135 |
Sr-Ti-0 Dielectric Films Grown by Injection MOCVD for High K Applications - L. Auvray, C. Dubourdieu, J.-P. Senateur (Ecole Nationale Superieure de Physique de Grenoble), S. Lhostis (STMicroelectronics), M. Audier, and P. Chaudouet (Ecole Nationale Superieure de Physique de Grenoble) |
o | 2136 |
Infrared Spectroscopic Study on Metalorganic Chemical Vapor Deposition of (Ba,Sr)TiO_3 Films - T. Nakamura, T. Nishimura, S. Momose, and K. Tachibana (Kyoto University) |
o | 2137 |
HfO_2 Films Obtained by Injection MOCVD - F. Roussel, H. Roussel, M. Audier, D. Catherine, J.-P. Senateur (UMR 5628), C. Jimenez (JIPELEC), T. Leedham, H. Davies, A. Jones (Epichem Oxides and Nitrides), B. O'Sullivan, M. Mondreau, P. Hurley (NMRC), Q. Fang, and I. Boyd (UCL) |
o | 2138 |
MOCVD Growth of PR2O3 High-K Gate Dielectric for Silicon: Synthesis and Structural Investigation - R. Lo Nigro (IMM sezione CNR di Catania), R. Toro, G. Malandrino (Universita di Catania), V. Raineri (IMM sezione CNR di Catania), and I. Fragala (Universita di Catania) |
o | 2139 |
Novel Precursors for High K Dielectrics and Metal Electrodes Part I: Synthesis - J. Atwood, D. Hoth, D. Moreno (University at Buffalo), C. Hoover, J. Peck, J. Natwora, M. Mosscrop, and S. Meiere (Praxair Electronics) |
o | 2140 |
MOCVD of KNbO_3 Thin Films - I. Korsakov, M. Romanov, I. Bolshakov (Moscow State University), S. Zhgoon (Moscow Power Engineering Institute), G. Wahl (Technical University of Braunschweig), and A. Kaul (Moscow State University) |
o | 2141 |
Synthesis and Characterization of Highly Oriented ZrTi04 Thin Films by Metal-Organic Chemical Vapor Deposition - G. Padeletti, M. Viticoli, A. Cusma (Inst. per lo Studio del Materiali Nanostrutturati), A. Santoni, S. Loreti (Encea C-R Frascati), C. Minarini (Enea C-R Portici), G.M. Ingo, and S. Kaciulis (Inst. per lo Studio del Materiali Nanostrutturati) |
Technical Exhibit and Tuesday Evening Poster Session, Conducting, Semiconducting, Magnetic Materials
Co-Chairs: M. Allendorf and F. Maury
Time | Abs# | Title |
o | 2142 |
An n+-InGaAs/n-GaAs Dual-Doped-Channel Heterostructure Field-Effect Transistor (DDC-HFET) Grown by LP-MOCVD - H.-M. Chuang (National Cheng-Kung University), K.-W. Lin (Chien Kuo Institute of Technology), K.-H. Yu, C.-Y. Chen, J.-Y. Chen, and W.-C. Liu (National Cheng-Kung University) |
o | 2143 |
(CuxZn1-x)Fe2O4 Ferrimagnetic Films Prepared by Atmospheric MOCVD at 360oC - Y. Chang, C. Huang, J. Lin, J. Yang, and Z. Yiu (Lunghwa University of Science and Technology) |
o | 2144 |
Niobium and Molybdenum-Based Molecular Magnets Grown as Thin Films by Chemical Vapor Deposition - E. Lamouroux, E. Alric, H. Casellas, L. Valade, D. De Caro, M. Etienne (CNRS), and D. Gatteschi (Polo Scientifico) |
o | 2145 |
MOCVD of Thin Mixed-Conducting Films on Porous Ceramic Substrates - D. Stiens, G. Wahl (Technische Universitat Braunschweig), G. Garcia (Inst. de Ciencia de Materials de Barcelona), A. Van Veen, and M. Rebeilleau (Institut de Recherche sur la Catalyse) |
o | 2146 |
Low Temperature Deposition of Ruthenium Films using Novel MOCVD Precursor - N. Oshima, T. Shibutami, K. Kawano (TOSOH Corporation), S. Yokoyama, and H. Funakubo (Tokyo Insitute of Technology) |
o | 2147 |
Effects of Co-doping Level on the Microstructures and Ferromagnetic Properties of Ti1-xCoxO2 Thin Films by Liquid-Delivery Metal-Organic Chemical Vapor Deposition - N.-J. Seong, Y.-N. Oh, and S.-G. Yoon (Chungnam National University) |
o | 2148 |
MOCVD Growth and Characterization of Cobalt Phosphide Thin Films on InP Substrates - D. Barreca (University of Padova), A. Camporese (ICIS-CNR Padova), M. Casarin (University of Padova and INSTM), N. El Habra (ICIS-CNR Padova), A. Gasparotto (University of Padova), M. Natali, G. Rossetto (ICIS-CNR Padova), E. Tondello (University of Padova and INSTM), and P. Zanella (ICIS-CNR Padova) |
o | 2149 |
Identification of Black Deposits Produced during the Hydride-OM VPE Growth of GaN - C. Park, S. Han, C. Doh, S. Yeo, D. Yoon (Yeungnam University), S.-K. Hwang, K.-H. Lee (Pohang University of Science and Technology), and T. Anderson (University of Florida) |
Technical Exhibit and Tuesday Evening Poster Session, MOCVD of Miscellaneous Materials
Co-Chairs: M. Allendorf and F. Maury
Time | Abs# | Title |
o | 2150 |
Design of MOCVD Film Growth in a Hot Wall Tubular Reactor - G. Battiston, R. Gerbasi (Istituto di Chimica Inorganica e delle Superfici del C.N.R), and K. Raic (Belgrade University) |
o | 2151 |
A Study on(311) CuCr2O4 Spinel Films Prepared by MOCVD - Y. Chang, C. Lin, and B. Lee (Lunghwa University of Science and Technology) |
o | 2152 |
Polycrystalline Spinel Chromite (ZnCr2O4) Films Prepared by MOCVD - Y. Chang, H. Pen, and C. Chung (Lunghwa University of Science and Technology) |
o | 2153 |
Tungsten Doped Vanadium Oxide Thin Films by Atmospheric Pressure Chemical Vapour Deposition - T. Manning and I. Parkin (University College London) |
o | 2154 |
Tin Phosphide Coatings from the Atmospheric Pressure Chemical Vapour Deposition of SnCl_4 and PCychexxH3-x. - R. Binions, C. Carmalt, and I. Parkin (University College London) |
o | 2155 |
Very Thin (<10nm) Silicon Oxynitride (SiOxNy) Layers Formed by PECVD - R. Beck, M. Cuch, A. Wojtkiewicz (Warsaw University of Technology), A. Kudla (Institute of Electron Technology), and A. Jakubowski (Warsaw University of Technology) |
o | 2156 |
Preparation of Pd/Zn/ZnO Catalysts for Methanol Streamreforming by MOCVD - N. Popovska, F. Kießlich, and G. Emig (University Erlangen-Nuremberg) |
o | 2157 |
Optical Properties of Low Pressure Chemically Vapor Deposited Silicon Oxynitride Films from SiCl_2H2-NH3-N2O Mixtures - D. Davazoglou (NCSR “Demokritos”) |
o | 2158 |
MOCVD of Transparent, p-Type Conducting CuCrO_2 Thin Films using Acetylacetonate Precursors - S. Mahapatra, A.U. Mane, M.S. Dharmaprakash, P.S. Bera, M.S. Hegde, and S.A. Shivashankar (Indian Institute of Science) |
o | 2159 |
Single Source MOCVD Precursors for RNiO_3 (R = Rare Earth Metal) Thin Film Deposition - P. Abdyushev, M. Novojilov, M. Ryazanov, E. Bochkov, N. Kuzmina, A. Kaul (Leninskie Gory), and A. Gleizes (Ecole Nationale Supérieure de Chimie de Toulouse) |
o | 2160 |
Low-Temperature Solution for Silicon Nitride LPCVD using Cl-Free Inorganic Trisilylamine - N. Tamaoki, Y. Sato (Toshiba Corporation), C. Dussarrat, J.-M. Girard, and T. Kimura (Air Liquide Laboratories) |
Technical Exhibit and Tuesday Evening Poster Session, Nonconventional CVD
Co-Chairs: M. Allendorf and F. Maury
Time | Abs# | Title |
o | 2161 |
Effects of Heat-treatment of Silica and Precursor on the Surface Density of Aminosilanes Deposited onto Silica by ALD - S. Ek, E. Iiskola, and L. Niinisto (Helsinki University of Technology) |
o | 2162 |
Kinetic Analysis of the Low Temeprature CVD of Silicon/Silicon Carbide from Methyltrichlorosilane/ Hydrogen for the Ceramization of Biomorphic Carbon Preforms - N. Popovska, D. Almeida Streitwieser, H. Gerhard, and G. Emig (University Erlangen-Nuremberg) |
o | 2163 |
Grafting Metalorganic Species into Mesoporous Silica from the Vapour Phase - A.N. Gleizes (Institut National Polytechnique de Toulouse), A. Fernandes, and J. Ghys-Dexpert (CNRS) |
o | 2164 |
Fluidized Bed Chemical Vapor Deposition: State of the Art and Main Challenges - B. Caussat (LGC), P. Serp (LCCFP), and C. Vahlas (CIRIMAT) |
o | 2165 |
Alkaline Earth Cyclopentadienyl Compounds as Precursors for Atomic Layer Deposition - T. Hatanpaa, T. Hanninen, J. Ihanus, J. Kansikas, I. Mutikainen, M. Vehkamaki, M. Ritala, and M. Leskela (University of Helsinki) |
o | 2166 |
Atomic Layer Deposition of Ruthenium from RuCp_2 and Oxygen: Film Growth and Reaction Mechanism Studies - T. Aaltonen, A. Rahtu, M. Ritala, and M. Leskela (University of Helsinki) |
o | 2167 |
Atomic Layer Deposition of Alumina from Trimethylaluminum and Ozone - P. Ho, C.-P. Chou (Reaction Design), S. Mokhtari, J. Bailey, and Y. Senzaki (ASML) |
o | 2168 |
CVD Coating of Sapphire Fibers with hBN to Improve Mechanical Properties of Mechanical Properties of Reinforced NiAl Composites - K. Reichert (ALSTOM Ltd.), R. Cremer (Cemecon AG), and D. Neuschutz (RWTH Aachen) |
Technical Exhibit and Tuesday Evening Poster Session, Process Control and Diagnostic
Co-Chairs: M. Allendorf and F. Maury
Technical Exhibit and Tuesday Evening Poster Session, Assisted Methods
Co-Chairs: M. Allendorf and F. Maury
Time | Abs# | Title |
o | 2170 |
Investigation of Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition - C. Popov and W. Kulisch (University of Kassel) |
o | 2171 |
Interaction between Active Plasma and Growing Co-C-O – Layer During PACVD - A. Nurnberg, R. Stolle, G. Wahl (TU Braunschweig), and K. Raic (Belgrade University) |
o | 2172 |
Plasma-Enhanced Chemical Vapor Deposition of Er-doped Amorphous Silicon Thin Films - M.M. Giangregorio, M. Losurdo (Institute of Inorganic Methodologies and of Plasmas), P. Capezzuto (Universita degli Studi di Bari), and G. Bruno (Institute of Inorganic Methodologies and of Plasmas) |
o | 2173 |
Atmospheric-Pressure Plasma-Enhanced Chemical Vapour Deposition (AP-PE-CVD) For Growth Of Thin Films At Low Temperature. - M.J. Davis, M. Tsanos, J. Lewis, D.W. Sheel, and M.E. Pemble (University of Salford) |
o | 2174 |
Chormium and Zirconium Type Layers Produced from Metalorganic Compounds Using the Glow Discharge Conditions - J.R. Sobiecki and T. Wierzchon (Warsaw University of Technology) |
o | 2175 |
Focused Ion Beam induced Chemical Vapor Deposition (FIB-CVD) for Local Nanodeposition of Dielectric Material - H. Wanzenboeck, H. Langfischer, S. Harasek, E. Auer, E. Bertagnolli, M. Gritsch, H. Hutter, J. Brenner, and H. Stoeri (Vienna University of Technology) |
o | 2176 |
Morphological Studies of Focused Ion Beam Induced Tungsten Deposition - H. Langfischer, S. Harasek, H. Wanzenboeck, B. Basnar, E. Bertagnolli, and A. Lugstein (Vienna University of Technology) |
o | 2177 |
Growth of ECR-CVD Carbon Nitride Films, with a High Nitrogen Content, from CH_4/N2/Ar Mixtures - M. Camero, C. Gomez-Aleixandre, and J.M. Albella (CSIC) |
o | 2178 |
Inprovement of Deposition Rate of Silica Film in the Vacuum Ultraviolet CVD Using a Excimer Lamp by Applying the Bias - Y. Motoyama (Miyazaki OKI Electric Co., Ltd), H. Yanagita, Y. Maezono, A. Yokotani, and K. Kurosawa (Miyazaki University) |
o | 2179 |
Composite Nitrided + Ti(N,C,O)Type Layers Produced by PAMOCVD Processes - T. Wierzchon, J. Sobiecki, P. Mankowski, and K. Roniatowski (Warsaw University of Technology) |
o | 2180 |
Microwave PACVD of Lw Friction a-SiC Coatings : From Plasma Characterization to Material Mechanical Property - L. Thomas, F. Teyssandier, M. Ducarroir (IMP-CNRS), C. Boher (Ecole des Mines d'Albi Carmaux), L. Autrique, J.M. Badie, and R. Berjoan (IMP-CNRS) |
o | 2181 |
Characterization of SiO2 Films by Photo-CVD using a Xe2 Excimer Lamp - K. Kurosawa (University of Miyazaki), J. Miyano (Miyazaki OKI Electric Co. Ltd.), Y. Maezono (University of Miyazaki), K. Toshikawa (Miyazaki OKI Electric Co. Ltd.), and A. Yokotani (University of Miyazaki) |
o | 2182 |
Growth of Homogeneous and Gradient BCxNy Films by PECVD Using Trimethylamino Borane Complex - M. Kosinova, N. Fainer, Y. Rumyantsev, E. Maximovski, F. Kuznetsov (RAS), M. Terauchi, K. Shibata, and F. Satoh (Tohoku University) |
o | 2183 |
Plasma Enhanced Chemical Vapor Deposition of PLASMA AlN Nanolayers - G. Beshkov (Institute of Solid State Physics) and K. Grogorov (Institute of Electronics) |
o | 2184 |
Sythnesis of Ultrafine Oxides Powders by PA CVD - S.V. Volkov, Y.A. Mazurenko, A.I. Gerasimchuk, and V.P. Ovsiannaikov (NAS Ukraine) |
o | 2185 |
Optimizing Net Deposition Rates for a High Density Plasma CVD Process - K. Niazi and Z. Chen (Intel Corporation) |
o | 2186 |
Thin Tungsten and Tungsten Oxide Films Produced by Tungsten Pentacarbonoyle Pentylisonitrile in a Remote Plasma Reactor - F. Hamelmann, A. Brechling, A. Aschentrup, U. Heinzmann, P. Jutzi (Universitaet Bielefeld), J. Sandrock, and U. Siemeling (Universitaet Kassel) |
o | 2187 |
High-Density Plasma CVD Films of Aluminum, Gallium, and Indium Nitrides from Coordination Compounds of Metals - Y.A. Mazurenko and A.I. Gerasimchuk (NAS Ukraine) |
Technical Exhibit and Tuesday Evening Poster Session, Nanostructured Materials
Co-Chairs: M. Allendorf and F. Maury
Time | Abs# | Title |
o | 2188 |
SAXS/WAXD on Thermally Annealed Nanostructured CVD-obtained TiO_2 Films - M. Lueiae Laveeviæ (University of Split), D. Posedel, and A. Turkoviae (Institute "Ruder Boskoviae") |
o | 2189 |
MOCVD of Copper/Copper Oxide Nanowires by High Supersaturation Ratio and Seed Layer - Y. Chang, C. Sung, M. Hsieh, and C. Hsiao (Lunghwa University of Science and Technology) |
o | 2190 |
MOCVD of Nanocrystalline Fe_2O3-ZrO2 and Fe2O3-Y2O3-ZrO2 Thin Films - G.A. Battiston, R. Gerbasi, D. Berto (Istituto di Chimica Inorganica e delle Superfici del C.N.R), D. Barreca (Istituto di Scienze e Tecnologie Molecolari del C.N.R. and INSTM), and E. Tondello (Universita di Padova) |
o | 2191 |
Development of Zinc Oxide Nanosctructure in MOCVD - Y. Chang, H. Lu, Y. Hung, C. Lee, J. Qiu, and X. Li (Lunghwa University of Science and Technology) |
o | 2192 |
Nano-structures of Group-III Nitrides by MOCVD using Molecular Precursors - J. Khanderi, A. Wohlfart, H. Parala, A. Devi, and R. Fischer (Ruhr-Universitat Bochum) |
o | 2193 |
Nanoscale CeO2-ZrO2 Thin Films: A Combined Approach by CVD and Sol-Gel Routes - L. Armelao, D. Barreca, L. Bigliani, G. Bottaro, A. Gasparotto, and E. Tondello (Padova University) |
o | 2194 |
Growth of Si and Ge Quantum Dots on Insulators by CVD - T. Baron (CNRS/LTM), F. Mazen (CNRS/LPM), L. Perniola (Politecnico di Milano), B. Pelissier (CNRS/LTM), J.-M. Hartmann, and J.-F. Damlencourt (CEA) |
o | 2195 |
CVD-Based Preparation Routes of Single-Walled Nanotubes with Controlled Architectures - M.L. Terranova, S. Orlanducci, V. Sessa (University of Rome "Tor Vergata" and INFM), and S. Botti (ENEA) |
o | 2196 |
Nanocrystalline SiCxNy Films: RPECVD Synthesis and Transformation Under Thermal Annealing - N. Fainer, M. Kosinova, Y. Rumyantsev, B. Ayupov, B. Kolesov, F. Kuznetsov, A. Boronin, S. Koscheev (RAS), M. Terauchi, K. Shibata, and F. Satoh (Tohoku University) |
o | 2197 |
Microcoiled Carbon Fibers Formed by Using Ni-Cu Catalysts in CVD Process - X. Chen, K. Takeuchi, S. Yang, Y. Hishikawa, and S. Motojima (Gifu University) |
o | 2198 |
Vapor Phase Preparation of Carbon Microcoils/Nanocoils Under Concerted Amplification of Magnetic Field and their Properties - S. Motojima, K. Kuzuya, S. Yang, X. Chen (Gifu University), T. Hashishin, H. Iwanaga (Nagasaki University), S. Shimada (Hokkaido University), H. Saito (Nagaoka University of Technology), N. Yoshikawa, T. Awaji, and K. Watanabe (Tohoku University) |
o | 2199 |
Carbon Micro/Nanocoils Produced by Using WS2 Catalyst in CVD Process - S. Yang, X. Chen, and S. Motojima (Gifu University) |
Level 2 Hallway, Le Palais des Congres
Technical Exhibit and Tuesday Evening Poster Session, Diffusion Barriers and CVD of Copper
Co-Chairs: M. Allendorf and F. Maury
Time | Abs# | Title |
o | 2200 |
MOCVD Grown Metal-Insulator-Semiconductor Field-Effect Transistor (MISFET) Hydrogen Sensor - K.-W. Lin (Chien Kuo Institute of Technology), H.-M. Chuang, C.-Y. Chen, C.-T. Lu, Y.-Y. Tsai, and W.-C. Liu (National Cheng-Kung University) |
o | 2201 |
New Copper(I) Precursors for the Deposition of Copper Films - K. Kohler, J. Eichhorn (Merck KGaA), F. Meyer (Universitat Gottingen), and D. Mayer (Merck KGaA) |
o | 2202 |
Polycrystalline Copper Whiskers and Networks Observed in MOCVD - Y. Chang, Y. Chen, R. Wu, K. Chen, and J. Lin (Lunghwa University of Science and Technology) |
o | 2203 |
Copper Dots Deposition Using New Precursors [CuI(hfac)]2(DVTMSO) and [CuI(hfac)]2(HD) - S.-W. Kang, J.-H. Yun, S.-W. Rhee, V. Krisyuk, and A. Turgambaeva (Pohang University of Science and Technology) |
o | 2204 |
Growth and Characterization of Ti-Al-N Films Prepared by Plasma-Enhanced Atomic Layer Deposition of TiN and AlN - Y.J. Lee and S.-W. Kang (Korea Advanced Institute of Science and Technology) |
o | 2205 |
MOCVD of CrSixCy Thin Films: Study of Their Potentiality as Diffusion Barrier - F.-D. Duminica and F. Maury (UMR-5085) |
o | 2206 |
Cr3(C,N)2 Thin Films Grown by MOCVD as Barrier Against Copper Diffusion - C. Gasqueres and F. Maury (UMR-5085) |
o | 2207 |
Cu Barrier Property of Low-k Film with k=3.5 Deposited by PE-CVD using HMDSO and N2O Gases - Y. Shioya, Y. Nishimoto (Semiconductor Process Laboratory), T. Ohdaira, R. Suzuki (National Institute of Advanced Industrial Science and Technology), and K. Maeda (Semiconductor Process Laboratory) |
o | 2208 |
Niobium Nitride Film Growth by Plasma CVD - A. Ganine and G. Vajenine (Max-Planck-Institut fuer Festkoerperforschung) |
o | 2209 |
Fabrication of Midgap Metal Gates compatible with very thin SiO2 films using Low Pressure Chemically Vapor Deposited Tungsten films - D. Kouvatsos, V. Ioannou-Sougleridis, S. Tsevas, D. Davazoglou, F. Christoforou, and C. Boukouras (Institute of Microelectronics) |
o | 2210 |
Silver Thin Films Deposited by MOCVD - M. Abourida (ESPCI), H. Guillon, C. Jimenez, J.-M. Decams (JIPELEC), O. Valet, and P. Doppelt (ESPCI) |
o | 2211 |
Comparative Study of MOCVD Platinum Thin Films Obtained by the Use of Liquid Injection System or a Conventional Bubbler - O. Valet, P. Doppelt (ESPCI-CNRS), P. Baumann, M. Schumacher (AIXTRON AG), F. Beuran (Universite Paris 12), and H. Guillon (JIPELEC) |
o | 2212 |
Copper Film Deposition with Cu(dpm)2 Precursor V. V. - V. Bakovets, T. Levashova, I. Dolgovesova, and E. Maximovski (RAS) |
o | 2213 |
Copper Thin Films Deposition by Atmospheric Aerosol CVD - J.-L. Deschanvres (ENSPG) |
Wednesday, April 30, 2003
Room 251, Level 2, Le Palais des Congres
Conducting, Semi-conducting or Magnetic Materials
Co-Chair: E. Blanquet
Time | Abs# | Title |
8:00 | 2214 |
Chemical Vapor Deposition of Cobalt on Si(100) - D. Greve, Q. Zhao, K. Barmak, and R. Singanamalla (Carnegie Mellon University) |
8:20 | 2215 |
Continuous and Granular Metal Films Prodiced by Chemical Vaopr Deposition with Chelate Compound Precursors - V. Bakovets (RAS) |
8:40 | 2216 |
LPCVD of Silicon Germanium Poly-Crystalline Films - P. Zagwijn, S. Van Aerde, and E. Oosterlaken (ASM International N.V.) |
9:00 | 2217 |
Growth and Formation of Inverse GaP and InP Opals - H.M. Yates, D.E. Whitehead, M.G. Nolan, M.E. Pemble (University of Salford), E. Palacios-Lidon (Instituto de Ciencia de Materiales de Madrid), S. Rubio, F.J. Meseguer (Universidad Politecnica de Valencia), and C. Lopez (Instituto de Ciencia de Materiales de Madrid) |
9:20 | 2218 |
Zinc Amide Compounds as Potential Precursors for the Synthesis of Sinc Nitride - E. Maile, A. Devi, and R. Fischer (Ruhr Universitat Bochum) |
9:40 | 2219 |
InP/InGaAs Tunneling-Emitter Bipolar Transistor (TEBT) with a Step-Graded Collector Structure Prepared by MOCVD - C.-Y. Chen (National Cheng-Kung University), K.-W. Lin (Chien Kuo Institute of Technology), W.-H. Chiou, H.-M. Chuang, J.-Y. Chen, and W.-C. Liu (National Cheng-Kung University) |
10:00 | |
Twenty-Minute Intermission |
MOCVD of Miscellaneous Materials
Co-Chairs: A. Jones and W. Rees
Time | Abs# | Title |
10:20 | 2220 |
Chemical Vapor Deposition of Co3O4 on Honeycomb Substrates for Catalytic Applications - E. Fischer Rivera (Universitat Bielefeld), B. Atakan (Universitat Duisburg), and K. Kohse-Hoinghaus (Universitat Bielefeld) |
10:50 | 2221 |
Low Pressure Chemical Vapor Deposition of Silicon Nitride Using Mono- and Disilylamine - C. Dussarrat, J.-M. Girard, T. Kimura (Air Liquide Laboratories), N. Tamaoki, and Y. Sato (Toshiba Corporation) |
11:10 | 2222 |
Titanium Phosphide Coatings from the Atmospheric Pressure CVD Reaction of TiCl_4 with PRxH3-x (R = Cyhex; or R = SiMe3 where x = 3) - C. Blackman, C. Carmalt, S. O'Neill, I. Parkin (University College London), K. Molloy, and L. Apostolico (University of Bath) |
11:30 | 2223 |
Study of Deposition Processes in PZT Films Grown by Liquid Delivery MOCVD - M. Kurasawa (Fujitsu Laboratories LTD.), M. Nakabayashi, K. Nakamura (Fujitsu LTD.), K. Maruyama (Fujitsu Laboratories LTD.), T. Eshita (Fujitsu LTD.), and K. Kurihara (Fujitsu Laboratories LTD.) |
11:50 | 2224 |
MOCVD of Ir-Al_2O4 Protective Coatings - I.K. Igumenov, N.V. Gelfond, N.B. Morozova, P.P. Semyannikov, S.V.T. Trubin, V.S. Danilovich (Russian Academy of Sciences), and L. Gimeno-Fabra (EADS Germany GmbH) |
Thursday, May 1, 2003
Non Conventional CVD
Co-Chairs: T. Besmann and M. Hitchman
Time | Abs# | Title |
8:00 | 2225 |
Atomic Layer Deposition of Thin Films for Microelectronics - M. Ritala and M. Leskela (University of Helsinki) |
8:30 | 2226 |
Atomic Layer Deposition (ALD) of Oxides, Nitrides, Carbides, and Metals - R.G. Gordon (Harvard University) |
9:00 | 2227 |
Inside-Outside Densification of Carbon Fiber Preforms by Isothermal, Isobaric CVI - W.G. Zhang and K.J. Huttinger (Universitat Karlsruhe) |
9:20 | 2228 |
Pyrolysis of Mixed Aerosols : A Versatile CVD-based Process to Produce High Yields of Clean and Long Aligned Carbon Nanotubes - M. Mayne-L'Hermite, X. Armand, D. Porterat, and C. Reynaud (CEA-CNRS) |
9:40 | 2229 |
Chemical Vapor Deposition in Spouted Bed Reactors - F. Juarez L., M.C. Lafont, F. Senocq, and C. Vahlas (CNRS) |
10:10 | |
Twenty-Minute Intermission |
Process Control and Diagnostics
Co-Chairs: T. van Mol and M. Allendorf
Time | Abs# | Title |
10:30 | 2230 |
Optical Probes of Atmospheric Pressure of CVD Systems - M. Pemble (University of Salford) |
11:00 | 2231 |
MOCVD Materials for Electronic and Optoelectronic Application - K. Christiansen, M. Luenenbuerger, Y. Dikme, B. Schineller, and M. Heuken (Aixtron AG) |
11:20 | 2232 |
In Situ Monitoring of Thin Film Oxygen Diffusion by Macroscopic Curvature - A.B. Tripathi, D.A. Boyd, and D.G. Goodwin (California Institute of Technology) |
11:50 | 2233 |
Uniform Molecular Flux in a Vertical Reactor with Pulsed Transition Regime Gas Flow - S. Krumdieck, J.-Y. Lee, and H. Raatz (University of Canterbury) |
12:10 | 2234 |
A Study of A ZnO MOCVD Mechanisms by Gas Phase Transmission FTIR - Y. Chang, Y. Huang, R. Chang, X. Su, and J. Lai (Lunghwa University of Science and Technology) |
Assisted Methods
Co-Chairs: L. Delzeit and M. Pemble
Time | Abs# | Title |
13:40 | 2235 |
Laser-Direct-Write Creation of 3-Dimensional Micro-Cages for Contact Free-Handling of Neutral Species in Solution - M. Stuke, K. Mueller (Max-Planck-Institut f. Biophys), T. Mueller, and G. Fuhr (Humboldt Universitaet) |
14:10 | 2236 |
Laser-Induced Carbon CVD using an Open-Air Reactor - K.H. Kwok and W.K.S. Chiu (University of Connecticut) |
14:30 | 2237 |
Titanium Dioxide Thin Film Deposition on Polymer Substrates by Light Induced Chemical Vapor Deposition - E. Halary-Wagner, F. Wagner, and P. Hoffmann (Swiss Federal Institute of Technology Lausanne) |
14:50 | 2238 |
Atmospheric Pressure Deposition of Silica Thin Films by Photo-CVD Using Vacuum Ultraviolet Excimer Lamp - Y. Maezono, K. Nishi, A. Yokotani, and K. Kurosawa (Miyazaki University) |
15:10 | 2239 |
Physical Properties of SiO_2 Layers Deposited at Room Temperature by a Combination of ECR Plasma and High-Speed Jet of Silane - G. Isai, J. Holleman, H. Wallinga (University of Twente), P. Woerlee (Royal Philips Electronics), M. Modreanu (National Microelectronics Research Centre), and C. Cobianu (Valahia University from Targoviste) |
15:30 | 2240 |
Influence of the Microwave Power in an ECR-PECVD Reactor on Dielectric-cap Induced Blue-shift in 1.55 um Laser Structures - J. Wojcik, B. Robinson, D.A. Thompson, and P. Mascher (McMaster University) |
15:50 | 2241 |
Study of Precursors for Atmospheric Pressure Plasma Enhanced CVD (AP-PECVD)of Silicon Oxide Films - S.E. Alexandrov (St Petersburg State Technical University), M.L. Hitchman, and N. McSporran (University of Strathclyde) |
16:10 | |
Twenty-Minute Intermission |
16:30 | 2242 |
Low Temperature Processing of SiO2 Thin Films by PECVD Technique Using an Inductively-Coupled High-Density RF Plasma Source - P. Joshi, S. Droes, J. Flores, T. Voutsas, and J. Hartzell (SHARP Laboratories of America, Inc.) |
16:50 | 2243 |
Plasma CVD of SiC/N: Experimental and Theoretical Results - H. Stafast (Darmstadt University of Technology), C. Berger, E. Broszeit (State Materials Testing Institute), F. Falk (Darmstadt University of Technology), H. Hoche (State Materials Testing Institute), E. Kroke (Darmstadt University of Technology), P. Kroll (RWTH), R. Riedel, V. Uhlitzsh, and Y. Zhou (Darmstadt University of Technology) |
17:10 | 2244 |
Bias Power Effect on Property of PE-CVD Low-k SiOCH Film - Y. Shioya (Semiconductor Process Laboratory), T. Ohdaira, R. Suzuki (National Institute of Advanced Industrial Science, and Technology), and K. Maeda (Semiconductor Process Laboratory) |
17:30 | 2245 |
Low Temperature Deposition of Microcrystalline Silicon by Plasma Assisted CVD - A. Grimaldi, A. Sacchetti, M. Losurdo, M. Ambrico, P. Capezzuto, and G. Bruno (Institute of Inorganic Methodologies and of Plasmas) |
Friday, May 2, 2003
Nanostructured Materials
Co-Chairs: D. Goodwin and G. Battiston
Time | Abs# | Title |
8:00 | 2246 |
CVD Growth of Carbon Nanotubes: Catalyst, Growth, and Structure - L. Delzeit (NASA Ames Research Center), I. McAninch (University Of Delaware), K. Matthews (Berkeley), H.T. Ng, R. Stevens, and M.M. Meyya Meyyappan (NASA Ames Research Center) |
8:30 | 2247 |
Synthesis of Carbon Nanotubes on Metallic Substrates by PECVD and Thermal CVD - D. Park, Y.H. Kim, and J.K. Lee (Korea Institute of Science and Technology) |
8:50 | 2248 |
Macroscopic and Microscopic Investigations on the LPCVD Fabrication of Silicon Nanodots on Oxidized Silicon Wafers - E. Blanquet, P. Donnadieu, M.-C. Schouler, J.-P. Simon, M. Maret, M. Pons (Domaine Universitaire), V. Cocheteau, B. Caussat (LGC/ENSIACET/INPT), E. Scheid (LAAS), P. Mur, and M.-N. Semeria (CEA/GRE) |
9:10 | 2249 |
Nanoscale ZnS and CdS Thin Films from Single-Source Molecular Precursors - L. Armelao, D. Barreca, G. Bottaro, A. Gasparotto, C. Maragno, C. Sada (Padova University), T.R. Spalding (University College, Cork), and E. Tondello (Padova University) |
9:30 | 2250 |
Nanostructured Cerium Dioxide Thin Films by MOCVD: Influence of the Substrate Nature and Processing Parameters - G. Malandrino (Universita di Catania), R. Lo Nigro (IMM), R. Toro, and I. Fragala (Universita di Catania) |
9:50 | 2251 |
Preparation of Thin Films and Nanoparticles of Zinc Oxide Using Alkylzinc Alkoxides - W. Cho, K. Sung, K.-S. An, S.S. Lee, C.G. Kim, and Y. Kim (Korea Research Institute of Chemical Technology) |
10:10 | |
Twenty-Minute Intermission |
10:30 | 2252 |
Nanostructured TiO_2 films deposited by MOCVD on Si-substrates - U. Backman, A. Auvinen, and J. Jokiniemi (VTT Processes) |
10:50 | 2253 |
Deposition Mechanism and Characterization of Nanocrystalline TiO2 Films Produced Using the ESAVD Method - X. Hou and K.-L. Choy (The University of Nottingham) |
11:10 | 2254 |
Photothermal Aerosol Synthesis of and Photoluminescence from Silicon Nanoparticles - X. Li, Y. He, and M. Swihart (University at Buffalo) |
11:30 | 2255 |
Lead Containing Perovskite Films and Superlattices Grown by MOCVBD in Self-Tuning Mode - A. Bosak, O. Gorbenko, A. Kaul, N. Mirin (Moscow State University), S. Gudenko (Kurchatov Institute), J.-P. Sénateur, C. Dubourdieu (Institut National Polytechnique de Grenoble), and I. Graboy (Moscow State University) |
Diffusion Barrier and CVD of Copper
Co-Chairs: A. Devi and P. Doppelt
Time | Abs# | Title |
13:40 | 2256 |
Thermodynamic and Experimental Approaches of Barrier Materials Synthesis for Silicon IC Technology - E. Blanquet, B. Chenevier, E. Ramberg, C. Bernard, and R. Madar (Domaine Universitaire) |
14:10 | 2257 |
Deposition and Treatment of Titanium Based Barrier Layers by MOCVD - R. Ecke (Chemnitz University of Technology), S. Riedel (Infineon Technologies Dresden), S.E. Schulz, T. Gessner (Chemnitz University of Technology), E. Lipp, and M. Eizenberg (Technion - Israel Institute of Technology) |
14:30 | 2258 |
Nitrogen-free Cu Barrier SiOCH Film with k=4.3 - Y. Nishimoto, Y. Shioya, H. Shimoda (Semiconductor Process Laboratory), T. Ohdaira, R. Suzuki (National Institute of Advanced Industrial Science, and Technology), and K. Maeda (Semiconductor Process Laboratory) |
14:50 | 2259 |
Structural Comparison Between Cu(hfac)(VTMS) and Cu(hfac)(MHY) : An Answer to Differences in Copper Film Deposition - M. Joulaud (Cea-Leti), L. Omnes (Merck KgaA), T. Mourier (Cea-Leti), D. Mayer (Merck KgaA), and P. Doppelt (ESPCI) |
15:10 | 2260 |
MOCVD Of Copper Films from Bis(ethyl-3-oxo-butanoato)copper(II): Experiment and Thermodynamic Analysis - S. Mukhopadhyay, K. Shalini (Indian Institute of Science), A. Devi (Ruhr-Universität Bochum), and S.A. Shivashankar (Indian Institute of Science) |
15:30 | 2261 |
Preparation of Cu Thin Films by MOCVD Using Novel Organometallic Cu(II) Precursors - C.G. Kim, J.W. Park, T.-M. Chung, S.S. Lee, and Y. Kim (Korea Research Institute of Chemical Technology) |
15:50 | 2262 |
Low Temperature Cu Thin Film Growth Using Cycles of Alternate Supply of (HFAC)Cu(I)(DMB) and Ar Purge Gas - K. Kim and K. Yong (Pohang Univesity of Science and Technology) |
16:10 | 2263 |
Thin Copper Films Prepared by CVD from (HFA)Cu 1.5-COD - A. Panin, A. Shugurov, T. Liskovskaya, I. Igumenov (Russian Academy of Sciences), I. Ivonin (Tomsk State University), and K. Oskomov (Russian Academy of Sciences) |
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