Co-Chair: D. Harame
Time | Abs# | Title |
---|---|---|
10:00 | Introductory Remarks- D. Harame | |
10:10 | 1282 | Using SiGe HBTs for Mixed-Signal Circuits and Systems: Opportunities and Challenges - J. Cressler (Georgia Tech) |
11:00 | 1283 | Enhanced Mobility CMOS - J. Hoyt (MIT) |
Co-Chairs: M. Ostling and K. Washio
Time | Abs# | Title |
---|---|---|
13:05 | 1284 | Complementary SiGe BiCMOS - B. Heinemann, J. Drews, D. Knoll, R. Kurps, S. Marschmeyer, H. Rücker, W. Winkler, and Y. Yamamoto (IHP) |
13:35 | 1285 | 0.13µm SiGeC BiCMOS Technology - A. Chantre, M. Laurens, P. Chevalier, A. Monroy, F. Deléglise, C. Fellous, L. Rubaldo, and D. Dutartre (ST Microelectronics) |
14:05 | 1286 | Device Performance Considerations of NPN HBTs Due to Elevated Oxygen in Sub-50 nm SiGe and SiGeC Base Layers Grown by LPCVD - D. Enicks (ATMEL Corporation) and G. Oleszek (University of Colorado at Colorado Springs) |
14:25 | 1287 | Emitter-Base Design Tradeoffs in 120GHz SiGe HBTs - A. Joseph, X. Liu, P. Geiss, M. Slusser, W. Hodge, M. Dupuis, R. Wuthrich, J. Nakos, and J. Dunn (IBM Microelectronics Division) |
14:45 | 1288 | Enhanced 5V Complementary SiGe BiCMOS Technology by Separate NPN/PNP Emitter Formation - B. El-Kareh, S. Balster, P. Steinmann, H. Yasuda, W. Nehrer, F. Hou, C. Dirnecker, M. Garbe, A. Haeusler, P. Menz, T. Scharnagl, M. Schiekofer, M. Waitschull, H. Schwekendiek, J.W. Weitjamns, C. Willis (Texas Instruments), J. Cressler, and E. Zhao (Georgia Institute of Technology) |
15:05 | Fifteen-Minute Intermission |
Co-Chairs: J. Hoyt and P. Coronel
Time | Abs# | Title |
---|---|---|
15:20 | 1289 | Strained-Si/SiGe-On-Insulator CMOS Technology as a Platform of Device Performance Boosters - S. Takagi, T. Mizuno, T. Tezuka, N. Sugiyama, T. Numata, K. Usuda, Y. Moriyama, S. Nakaharai, J. Koga, A. Tanabe, N. Hirashita, T. Irisawa, and T. Maeda (MIRAI-AIST) |
15:50 | 1290 | Application of Selective SiGe Epitaxy for Recessed Source/Drain of PMOS Transistor - Y. Kim, A. Samoilov, L. Washington, A. Lam, N. Dalida, M. Kawaguchi, and M. Shen (Applied Materials) |
16:20 | 1291 | Strained Ge MOSFET Technology - M. Lee, A. Ritenour, D. Antoniadis (MIT Microsystem Technology Laboratories), and E. Fitzgerald (MIT) |
16:40 | 1292 | Extraction of Band Offsets in Strained Si/Strained Si_1-yGey on Relaxed Si1-xGex Dual-Channel Enhanced Mobility Structures - C. Ni Chleirigh (Massachusetts Institute of Technology), C. Jungemann (NST, Technical University Braunschweig), J. Jung, O. Olubuyide, and J. Hoyt (Massachusetts Institute of Technology) |
17:00 | 1293 | Mobility Enhancement in Compressively Strained SiGe Surface Channel pMOS (FET) with HfO2/TiN Gate Stack - B.-Y. Jin, S. Datta, G. Dewey, M. Doczy, B. Doyle, U. Shah, J. Kavalieros, M. Metz, N. Zelick, R. Chau, and J. Brask (Intel Corporation) |
17:20 | 1294 | Epitaxially Strained SiGe Process to Improve Mobility in the PMOS Transistor - P.R. Chidambaram, B. Smith, L. Hall, H. Bu, S. Chakravarthi, A. Kim, P. Jones, R. Irwin, M. Kim, C. Machala, D. Grider (Texas Instruments), Y. Kim, A. Samoilov (Applied Materials), and M. Kim (University of Texas at Dallas) |
Co-Chairs: J.D. Cressler and H. Iwai
Time | Abs# | Title |
---|---|---|
19:25 | 1295 | HRXRD Analysis of BiCMOS SiGeC Layers for BiCMOS Applications - E. Haralson, A. Sibaja-Hernandez, M. Xu, G. Malm, H. Radamson, and M. Ostling (KTH, Royal Institute of Technology) |
19:28 | 1296 | Thickness Dependent Growth Kinetics in Ni-Mediated Crystallization of a-SiGe on Insulator - T. Sadoh, H. Kanno, O. Nakano, A. Kenjo, and M. Miyao (Kyushu University) |
19:31 | 1297 | Multitechnique Characterization of Sandwiched Si/SiGe/Si Heterostructures - Z.C. Feng, T.R. Yang, R.P.G. Karunasiri, W. Lu, and W.E. Collins (National Taiwan University) |
19:34 | 1298 | Diffusion of Ion-Implanted Boron in High Ge Content SiGe Alloys - S. Uppal (Univerisity of Southampton), M. Bollani (INFM), A.F.W. Willoughby (Univerisity of Southampton), J. Bonar (Innos Limited), R.J.H. Morris, and M.G. Dowsett (University of Warwick) |
19:37 | 1299 | Ge-MIS Structures by Direct Nitridation of Ge - T. Maeda, T. Yasuda, M. Nishizawa, N. Miyata, Y. Morita, and S. Takagi (MIRAI-AIST) |
19:40 | 1300 | Analysis of Steam Oxidation of Crystalline Si1-xGex using AFM and CABOOM - K. Fobelets, A. Alaudeen, M. Ahmad, S. Clowes, and J. Zhang (Imperial College London) |
19:43 | 1301 | Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe - R. Wittmann, A. Hoessinger, and S. Selberherr (Technical University Vienna) |
19:46 | 1302 | Boron Diffusion and Activation in Polycrystalline Si1-xGes Films for CMOS Gate Electrodes - T. Sulima, J. Schulze, U. Abelein, A. Ludsteck, and I. Eisele (University of the German Federal Armed Forces Munich) |
19:49 | 1303 | Growth of SiGeC Layers by GSMBE and its Characterization by X-Ray Techniques - J. Zhang, J. Neave, X. Li (Imperial College London), P. Fewster (PANAlytical Research Centre), H. Mubarek, P. Ashburn (University of Southampton), I. Mitrovic, O. Buiu, and S. Hall (University of Liverpool) |
19:52 | 1304 | Temperature Control Studies for LPCVD of Complex In-Situ Doped Sub-50 nm SiGe and SiGeC Base Films in NPN HBTs - D. Enicks (ATMEL Corporation) and G. Oleszek (University of Colorado at Colorado Springs) |
19:55 | 1305 | H Getter Structures for Improved Ge Layer Exfoliation Processes - A. Pitera and E. Fitzgerald (Massachusetts Institute of Technology) |
19:58 | 1306 | SIMS Depth Profiling of B and As Implants in Si/Si1-xGex and Strained Si/Si1-xGex - J. Bennett (International SEMATECH), P. Kohli, R. Wise, M. Rodder, S. Yu, R. Cleavlin, M. Pas (Texas Instruments), G. Braithwaite, M. Currie, and A. Lochtefeld (AmberWave Systems) |
20:01 | 1307 | Sidewall Protection by Nitrogen in Anisotropic Etching of P-doped Poly-Si_1-xGex - H.-S. Cho, S. Takehiro, M. Sakuraba, and J. Murota (Tohoku University) |
20:04 | 1308 | Silicon Nanowhiskers Grown on <111> Si Substrates by Molecular Beam Epitaxy - P. Werner, L. Schubert, N.D. Zakharov, G. Gerth, F.M. Kolb, and U. Goesele (MPI of Microstructure Physics) |
20:07 | 1309 | Electrical Properties of B-doped Polycrystalline Si_1-x-yGexCy Film Deposited by Ultraclean Low-Pressure CVD - H. Shim, M. Sakuraba, and J. Murota (Tohoku University) |
20:10 | 1310 | Carbon and Boron in Heavily Doped SiGe:C/Si Epilayers Studied by FTIR - V. Akhmetov (IHP/BTU Joint Lab), O. Lysytskiy (BTU), Y. Yamamoto, and H. Richter (IHP) |
20:13 | 1311 | Growth of Relaxed Si1-xGex by Using Oxidation of Si1-xGex - B. Min, K. Jeon, Y. Pea (Yonsei University), M.-H. Cho (Korea Research Institute of Standards and Science), T.-W. Lee (Ju Sung Engineering Co., Ltd.), and D.-H. Ko (Yonsei University) |
20:16 | 1312 | Enhancement of SiGe Relaxation for Fabrication of SGOI Substrates Using Condensation - M. Sadaka (Motorola) |
20:19 | 1313 | Nanstructure and optical properties of self-assembled Ge quantum dots grown in a hot wall UHV/CVD system - P.S. Chen, Z.W. Pei, S.W. Lee, M.J. Tsai, and C.W. Liu (Electronics Research & Service Organization, Industrial Technology Research Institute) |
20:22 | 1314 | Modification of Optical Properties of Si1-XGeX/p-Si<100> MQWs Grown byLPCVD for Photonic Applications - R. Hashim (Universiti Sains Malaysia) |
20:25 | 1315 | Extended Defect States in Ge Quantum Dots and GeSi Quantum Wells - H. Cho (Dongguk University) |
20:28 | 1316 | Quantification of Ge and B in SiGe using Secondary Ion Mass Spectrometry - H.-U. Ehrke (FEI Company) |
20:31 | 1317 | Anomalous Behaviour of Buried Strained-Si Channel Heterojunction FETs at Low Temperatures - V. Gaspari, K. Fobelets (Imperial College London), J.-E. Velazquez-Perez (University of Salamanca), T. Hackbarth, and U. Konig (DaimlerChrysler Research Centre) |
20:34 | 1318 | Dispersion in SiGe Devices Revealed by Fast Pulsed Measurements. - P. Ladbrooke, J. Bridge, and N. Goodship (Accent Optical Technologies) |
20:37 | 1319 | Low Frequency Noise Mechanisms in Si and Pseudomorphic SiGe p-Channel Field-Effect Transistors - M. Prest, D. Fulgoni, A. Bacon, R. Crowder, E. Parker, T. Whall (University of Warwick), A. Evans (University of Southampton), and T. Grasby (University of Warwick) |
20:40 | 1320 | Integration Issues of a New Method for Formation of Shallow Junctions in MOSFET Structures Using Recessed and Selectively Regrown Si1-xGex - U. Isheden (KTH (Royal Institute of Technology)) |
20:43 | 1321 | Titanium Dioxide Gate Dielectric for Strained-Germanium Heterolayers - S. Chakraborty, S. Das, M.K. Bera, and C.K. Maiti (Indian Institute of Technology) |
20:46 | 1322 | Tri-layer Heterostructure for Improved PMOS Enhancements Preserved Over a Large Processing Temperature Range - S. Gupta, M. Lee, G. Taraschi, A. Pitera, and E. Fitzgerald (Massachusetts Institute of Technology) |
20:49 | 1323 | Strained Si_1-xCx Field Effect Transistor on SiGe Substrate - S. Chang (Chung Yuan Christian University), M. Lee, S. Lu, and C. Liu (Industrial Technology Research Institute) |
20:52 | 1324 | Hf Noise Improvement of SiGeC HBTs by Base DSoping Optimization - J. Kraft, B. Löffler, G. Röhrer, G. Meinhardt, W. Pflanzl, H. Enichlmair, W. Niko, Z. Huszka, and E. Wachmann (Austriamicrosystems AG) |
20:55 | 1325 | VBIC Model Application and Model Parameter Optimization for SiGe HBT - S.-H. Lee, J.-Y. Lee, S.-Y. Lee, C.W. Park, H.-C. Bae, and J.-Y. Kang (Electronics and Telecommunications Research Institute) |
20:58 | 1326 | Fully Pseudomorphic Si/SiGe/Si Schottky Source-Drain pMOSFET - R. Crowder, M. Prest, T. Grasby, L. Nash, T. Whall, and E. Parker (University of Warwick) |
Co-Chairs: A. Chantre and D. Knoll
Time | Abs# | Title |
---|---|---|
08:00 | Introductory Remarks | |
08:10 | 1327 | RF analog Application for Low Voltage SiGe BiCMOS Technology - M. Thiel and X. Xing (Robert Bosch GmbH) |
08:40 | 1328 | SiGe HBT Circuit Applications - M. Wurzer, T.F. Meister, H. Knapp, J. Böck (Infineon Technologies AG), W. Perndl (Technical University Vienna), H. Schäfer, W. Bakalski, K. Aufinger, M. Rest, R. Stengl, S. Boguth, R. Schreiter, and W. Simbürger (Infineon Technologies AG) |
09:10 | 1329 | Correlation Between SiGe HBT Doping Profile and Operation Configuration - Z. Ma, N. Jiang, and G. Wang (University of Wisconsin) |
09:40 | 1330 | RF Pulse I-V Based Avalanche Measurement in High Speed SiGe HBTs - J. Pan and G. Niu (Auburn University) |
10:00 | 1331 | BiCMOS Devices Under Mechanical Strain - C.W. Liu, S. Maikap, M.H. Liao, F. Yuan (National Taiwan University), C.W. Liu, and M.H. Lee (Industrial Technology Research Institute) |
10:20 | Fifteen-Minute Intermission |
Co-Chairs: K. DeMeyer and T. Ghani
Time | Abs# | Title |
---|---|---|
10:35 | 1332 | SiGe MODFETs: Overview and Issues for Sub-100 nm Gate-Length Scaling - S. Koester, J. Chu, K. Saenger, Q. Ouyang, J. Ott, D. Canaperi, J. Tornello, and C. Jahnes (IBM) |
11:05 | 1333 | Strain Relaxation in Narrow Width Strained Silicon Devices with Poly and Metal Gates - Z. Krivokapic (AMD), V. Moroz, L. Smith (Synopsys), Q. Xiang, and M.-R. Lin (AMD) |
11:35 | 1334 | Schottky Barrier Height Engineering with a Strained-Si Channel for Sub-50nm Gate Schottky Source/Drain MOSFETs. - K. Ikeda, Y. Yamashita, A. Endoh, K. Hikosaka, and T. Mimura (Fujitsu Laboratories, Ltd.) |
11:55 | 1335 | Ge Diffusion Effect on Low Frequency Noise in Ultra-thin Strained-SOI CMOS - A. Tanabe, T. Numata, T. Mizuno (MIRAI-ASET), T. Maeda, and S. Takagi (MIRAI-AIST) |
12:15 | 1336 | Design, Fabrication and Operation of Sub-65nm Strained-Si/Si 1-xGex MOSFETS - A. Thean (Motorola) |
Co-Chairs: D.S. Xu and H. Presting
Time | Abs# | Title |
---|---|---|
13:50 | 1337 | Light generation, amplification, wavelength conversion, and 3-D photonic integration in silicon - B. Jalali, R. Claps, P. Koonath, V. Raghunathan, D. Dimitropoulos, and T. Indukuri (University of California, Los Angeles) |
14:20 | 1338 | Quasi-Monosized Si Quantum Dot Arrays for Optical Applications: Quantum Confinement and Doping - M. Zacharias (Max Planck Institute of Microstructure Physics) |
14:50 | 1339 | Photonics, Electronics and Silicon-Germanium : a possible convergence ? - O. Kermarrec, Y. Campidelli, D. Bensahel (STMicroelectronics), S. David, M. El kurdi, P. Boucaud (Institu d'Electronique Fondamentale), Y. Chriqui, S. Bouchoule, G. Saint-Girons, and I. Sagnes (Laboratoire de Photonique et de Nanostructures) |
15:20 | 1340 | Optoelectronic Substrates by SiGen NanoTec[TM] - a General Layer-Transfer (LT) Approach - I. Malik, A. Lamm, J. Sullivan, S. Kang, D. Jacy, and H. Kirk (Silicon Genesis Corporation) |
15:50 | Fifteen-Minute Intermission |
Co-Chairs: B. Tillack and W.B. de Boer
Time | Abs# | Title |
---|---|---|
16:05 | 1341 | Group-IV Semiconductor Materials Engineering for Advanced Device Technology - Y. Yasuda, A. Sakai, O. Nakatsuka, and S. Zaima (Nagoya University) |
16:35 | 1342 | A Hydrogen Pre-Bake Process for Si Epitaxy on SiGe Surface - H. Chen (IBM Microelectronics Division), S. Bedell (IBM T.J. Watson Research Center), R. Murphy, D. Mocuta, A. Turansky, A. Domenicucci (IBM Microelectronics Division), and D. Sadana (IBM T.J. Watson Research Center) |
16:55 | 1343 | Low Temperature SiGe Process For Defect-free Expitaxy - L.-G. Yao, K.-C. Lee, S.-C. Chen, and M.-S. Liang (Taiwan Semiconductor Manufacturing Company) |
17:15 | 1344 | A Novel, High Quality SiGe Graded Buffer Growth Process Using GeCl4 - R. Westhoff, J. Carlin, M. Erdtmann, T. Langdo, C. Leitz, V. Yang, K. Petrocelli, M. Bulsara, E. Fitzgerald, and C. Vineis (Amberwave Systems Corporation) |
17:35 | 1345 | Investigation of Facet Formation in RTCVD Si/SiGe Selective Epitaxy - A. Talbot (STMicroelectronics) |
17:55 | 1346 | 300 mm SGOI/Strain-Si for High-Performance CMOS - A. Reznicek (IBM) |
Co-Chairs: B. Jalai and N. Usami
Time | Abs# | Title |
---|---|---|
10:00 | Introductory Remarks | |
10:10 | 1347 | Prospects and Challenges for Microphotonic Waveguide Components Based on Si and SiGe - D.-X. Xu, J.-M. Baribeau, P. Cheben, D. Dalacu, A. Delage, B. Lamontagne, S. Janz, M.-J. Picard, and W. Ye (Institute for Microstructural Sciences, National Research Council Canada) |
10:40 | 1348 | Si-Based Near-Infrared Detection And Emission: Highlights From The (Uncompleted) Trail Towards Monolithic Integration With CMOS - G. Masini, L. Colace, and G. Assanto (INFM - University Roma Tre) |
11:10 | 1349 | Novel Concepts in Thin Film Solar Cells - H. Presting (DaimlerChrysler Research (REM/C)), J. Konle (TRW Occupants Safety systems), G. Palfinger (Paul Scherrer Institute), H. Kibbel, U. König (DaimlerChrysler Research (REM/C)), P. Uebele, and G. Strobl (RWE Solar Space Power GmbH) |
11:40 | 1350 | High Ge Content Si / SiGe Heterostructures for Microelectronics and Optoelectronics Purposes - J.-M. Hartmann, J.-F. Damlencourt (LETI / D2NT / LFE), Y. Bogumilowicz (STMicroelectronics), B. Vandelle, A. Abbadie, and T. Billon (LETI / D2NT / LFE) |
Co-Chairs: S. Takagi and S. Koester
Time | Abs# | Title |
---|---|---|
13:15 | 1351 | Uniaxial Strained Silicon CMOS Devices for High Performance Logic Nanotechnology - T. Ghani (Intel) |
13:45 | 1352 | Ge Deep-Submicron PMOS Transistors with Etched TaN Metal Gate on a High-K Dielectric, Fabricated in a 200mm Prototyping Line - M. Meuris, B. De Jaeger, and K. De Meyer (IMEC) |
14:15 | 1353 | 3D Integration of Ultimate Devices Thanks to SiGe - C. Philippe (STMicroelectronics), H. Samuel (University of Provence), C. Robin, M. Stephane, and S. Thomas (STMicroelectronics) |
14:35 | 1354 | SiGe-Based Combined MBE and CVD Processing for Vertical Silicon-on-Nothing (SON) Device Technology - J. Schulze, I. Eisele (University of the German Federal Armed Forces Munich), P. Thompson, G. Jernigan (US Naval Research Laboratory), and T. Suligoj (University of Zagreb) |
14:55 | Fifteen-Minute Intermission |
Co-Chairs: M. Bulsara and S. Koester
Time | Abs# | Title |
---|---|---|
15:10 | 1355 | Strained Silicon on Relaxed SiGe Made by Ion Implantation and Strain Transfer - S. Mantl, D. Buca, B. Hollaender, M. Mörschbächer, H. Trinkaus, and M. Luysberg (Research Center Juelich) |
15:40 | 1356 | Formation Mechanism of Ge-on-Insulator Layers by Ge-condensation Technique - S. Nakaharai, T. Tezuka, N. Sugiyama (MIRAI(ASET)), and S.-I. Takagi (MIRAI(AIST)) |
16:00 | 1357 | Strained Silicon on Silicon by Wafer Bonding and Layer Transfer From Relaxed SiGe Buffer - D. Isaacson, G. Taraschi, A. Pitera, N. Ariel, E. Fitzgerald (Massachusetts Institute of Technology), and T. Langdo (AmberWave Systems Corporation) |
16:20 | 1358 | Strained Silicon on Insulator (sSOI) by Wafer Bonding - U. Reiche (Max Planck Institute of Microstructure Physics) |
16:40 | 1359 | Ge & GeB Infusion Doping and Deposition for Ultra-Shallow Junction and Blanket or Localized SiGe Formation on Cz and SOI Wafers - J. Borland (J.O.B. Technologies) and J. Hautala (Epion Corporation) |
Co-Chairs: D. Houghton and J.M. Hartmann
Time | Abs# | Title |
---|---|---|
18:45 | 1360 | Outlook and Opportunities for Hetero-Epitaxy in Si CMOS Technology and Beyond - S. Koester (IBM) |
19:05 | 1361 | Low-Temperature CVD of Epitaxial Si and SiGe: Room for Improvement - W. de Boer (Philips Semiconductors/Fishkill) |
19:25 | 1362 | Atomic Level Control of SiGe Epitaxy and Doping - B. Tillack (IHP) |
19:45 | 1363 | Selective Epitaxy of Si and SiGe for Advanced Applications: Possibilities and Limitations - M. Caymax and R. Loo (IMEC vzw) |
20:05 | 1364 | Low-Temperature SiGe(C) Epitaxial Growth by Ultraclean Hot-Wall Low-Pressure CVD (Invited Paper) - J. Murota (Tohoku University) |
20:35 | 1365 | Advanced Epitaxy by Rapid Thermal CVD - D. Dutartre, A. Talbot, C. Fellous, F. Deleglise, L. Rubaldo, N. Loubet, P. Chevalier, and A. Chantre (ST Microelectronics) |
Co-Chairs: M. Lagally and R. Harper
Time | Abs# | Title |
---|---|---|
08:00 | Introductory Remarks | |
08:10 | 1366 | Effect of Growth Temperature on Lattice Relaxation during SiGe Growth on Si Substrates - Y. Moriyama, N. Sugiyama, N. Hirashita, S. Nakaharai, and S. Takagi (MIRAI-ASET) |
08:30 | 1367 | Thin Compliant SiGe for Relaxed SiGe and Strained Si Growth - G. Jernigan, M. Twigg, M. Fatemi, N. Bassim, and P. Thompson (US Naval Research Laboratory) |
08:50 | 1368 | Fabrication of Thin Relaxed SiGe Films for Strained Si Applications - D. Tweet, J.-S. Maa, J.-J. Lee, and S.-T. Hsu (Sharp Labs of America) |
09:10 | 1369 | High-Quality Strain Relieved SiGe Buffer Prepared by Means of Thermally-Driven Relaxation and CMP process - S.-H. Kim, Y.-J. Song, K.-H. Shim, and J.-Y. Kang (ETRI) |
09:30 | 1370 | Formation of High Quality SGOI Structure by Modified Oxidation-Induced Ge Condensation Process - T. Sadoh, R. Matsuura, I. Tsunoda (Kyushu University), M. Ninomiya, M. Nakamae (SUMCO), T. Enokida, H. Hagino (Fukuryo Semicon Engineering), and M. Miyao (Kyushu University) |
09:50 | Fifteen-Minute Intermission |
Co-Chairs: D. Dutartre and C.W. Lui
Time | Abs# | Title |
---|---|---|
10:05 | 1371 | Retardation of Arsenic Diffusion in Silicon-Germanium by Co-Implantation - O. Dokumaci, P. Ronsheim, A. Mocuta, D. Mocuta, P. Kozlowski, J. Li, D. Chidambarrao, P. Saunders, and H. Chen (IBM) |
10:25 | 1372 | Diffusion in SiGe: defect injection studies in Sb, As and B - J.M. Bonar (Innos Ltd), M.S.A. Karunaratne, S. Uppal (University of Southampton), J. Zhang (Imperial College), P. Ashburn, and A.F.W. Willoughby (University of Southampton) |
10:45 | 1373 | C Atomic Order Doping at Si/Si_1-x Gex/Si Heterointerface and Improvement of Thermal Stability - K. Takahashi, T. Kobayashi, M. Sakuraba, and J. Murota (Tohoku University) |
11:05 | 1374 | Modeling of Germanium and Antimony Diffusion in Si1-xGex - H. Zhu (IBM Corporation) |
11:25 | 1375 | Low Temperature LPCVD Epitaxy of In-Situ Boron Doped SiGe and SiGeC Strained Layers with Sub-E17 Oxygen Concentration - D. Enicks (Amtel Corporation) and G. Oleszek (University of Colorado at Colorado Srpings) |
Co-Chairs: I. Eisele and D. Gruetzmacher
Time | Abs# | Title |
---|---|---|
13:00 | 1376 | Novel Device Concepts for SiGe Nanoelectronics - D. Grützmacher, L. Zhang (Paul Scherrer Institut), S. Golod, and V. Prinz (Russian Academy of Science, Sibirian branch) |
13:30 | 1377 | Characterization of Ge Outdiffusion and Si Cap Thickness in Strained Si/SiGe Structures Using SIMS - R.S. Hockett, G. Goodman, S.P. Smith (Charles Evans & Associates), and P.B. Merrill (Evans Northeast) |
13:50 | 1378 | Impact of Strained-Si/SiGe Heterostructure Dislocations on Electrical Activity of Defects - A. Czerwinski (North Carolina State University) |
14:10 | 1379 | Effect of Thermal Processing on Dopant Layer Abruptness in Si1-xGe_x Heterostructures - N. Rowell (National Research Council of Canada) and D. Houghton (Aixtron Inc.) |
14:30 | 1380 | Dissecting a Compositionally Graded SiGe Virtual Substrate by X-Ray Reciprocal Space Mapping - J. Zhang, X. Li (Imperial College London), and P. Fewster (PANAlytical Research Centre) |
14:50 | Fifteen-Minute Intermission |
Co-Chairs: T.J. King and S. Sedky
Time | Abs# | Title |
---|---|---|
15:05 | 1381 | Direct Deposition of Poly-crystalline Silicon Germanium on a Glass Substrate at 450oC and Their TFT Application - K. Shimizu (Imaging Science and Engineering Laboratory) |
15:35 | 1382 | Industrial Applications of Poly-Silicon-Germanium as Functional MEMS Material. - W. Frey (Robert Bosch Corporation RTC), C. Leinenbach, S. Kronmueller, F. Laermer, T. Fuchs (Robert Bosch GmbH), H. Seidel (Saarland University), T. Thomas, and K. Robb (STS plc) |
16:05 | 1383 | Fast Recovery and Low Vf Characteristics on SiGe/Si/Si Pin Diodes - F. Hirose (Yamagata University) |
16:25 | 1384 | In-situ Doped Poly-SiGe LPCVD Process using BCl3 for Post-CMOS Integration of MEMS Devices - C. Low, M. Wasilik, H. Takeuchi, T.-J. King, and R. Howe (University of California at Berkeley) |
Time | Abs# | Title |
---|---|---|
18:00 | Posters from Session 4 |
Co-Chairs: M. Zacharias and O. Kermarrec
Time | Abs# | Title |
---|---|---|
08:00 | Introductory Remarks | |
08:10 | 1385 | RP-CVD Grown Ge Islands for 1.3-1.6 µm Photodetection - J.-F. Damlencourt, B. Vandelle (CEA-DRT/LETI), B. Cluzel, V. Calvo, S. David (CEA-DSM/DRFMC), J.-M. Hartmann, J.-M. Fedeli, and T. Billon (CEA-DRT/LETI) |
08:30 | 1386 | Photoresponse and Dark Current Study of Ge QDIPs for Mid-Infrared Wavelength - S. Tong, J.-Y. Lee, F. Liu, H.-J. Kim, and K. Wang (University of California at Los Angeles) |
08:50 | 1387 | Infrared Photo-Detectors Based on a Ge-DOT/SiGe-Well Field Effect Transistor Structure - A. Elfving (Linköping University) |
09:10 | 1388 | Improvement of Device Performance of Multicrystalline Si-Based Solar Cells Using Multicrystalline SiGe With Microscopic Compositional Distribution - K. Nakajima, K. Fujiwara, W. Pan, N. Usami, T. Ujihara, and T. Shishido (Tohoku University) |
09:30 | 1389 | Improved Photovoltaic Cell Performance Based on Ge Islands Embedded into the Intrinsic Layer - A. Alguno, N. Usami, W. Pan (Institute for Materials Research, Tohoku University), K. Sawano (Dept. of Appl. Phys., The University of Tokyo), K. Fujiwara, T. Ujihara (Institute for Materials Research, Tohoku University), Y. Shiraki (Dept. of Appl. Phys., The University of Tokyo), T. Yokoyama (AirWater), and K. Nakajima (Institute for Materials Research, Tohoku University) |
09:50 | Fifteen-Minute Intermission |
Co-Chairs: M. Caymax and A. Samoilov
Time | Abs# | Title |
---|---|---|
10:05 | 1390 | SiGe material used as DRAM capacitor electrodes - E.-X. Ping and E. Blomiley (Micron Technology, Inc) |
10:35 | 1391 | Ultraclean Hot-Wall LPCVD System Application for Blanket B-Doped SiGe(C) and Selective Si Epi - Y. Kunii, Y. Inokuchi, A. Moriya, H. Kurokawa (Hitachi Kokusai Electric Inc.), and J. Murota (RIEC, Tohoku University) |
10:55 | 1392 | Growth and Morphological Stability of Nickel Germanosilicide on Strained Si1-xGex (x=0.1 to 0.25) Under Rapid Thermal Annealing - V. Carron, J.-M. Hartmann, T. Farjot, P. Holliger, F. Laugier, and G. Rolland (Commissariat a l'Energie Atomique - LETI) |
11:15 | 1393 | Preparation and Evaluation of NiGe Gate Electrodes for Metal-Oxide-Semiconductor Devices - Y. Kaneko, H. Kondo, A. Sakai (Graduate School of Engineering Nagoya University), S. Zaima (CCRAST Nagoya Univ.), and Y. Yasuda (Graduate School of Engineering Nagoya University) |
11:35 | 1394 | Ultra-Shallow Junction Formation in Strained Si/Si1-xGex using Flash-Assist RTA - P. Kohli (Sematech) |
Co-Chairs: J. Murota and Y. Kunii
Time | Abs# | Title |
---|---|---|
13:10 | 1395 | SiGe Wet Oxidation at Low Temperature : Application to SiGeOI Thinning - N. Daval, E. Guiot, S. Bisson, I. Cayrefourcq, and K.K. Bourdelle (SOITEC) |
13:30 | 1396 | Maximization of Active As Doping in (Selective) Epitaxial Si and SiGe Layers - R. Loo (IMEC), P. Bajolet, J.-W. Maes (ASM-Belgium), M. Bauer (ASM-America), M. Caymax (IMEC), and C. Arena (ASM-America) |
13:50 | 1397 | Understanding and Improvement of the SiGe Wet Selective Etch for the sSOI Manufacturing by the Smart Cut_TM Process - O. Rayssac (SOITEC), P. Besson (ST Microelectronics), V. Loup (CEA-DRT-LETI/DTS-CEA/GRE), C. Aulnette (SOITEC), S. Favier (ST Microelectronics), B. Osternaud, L. Portigliatti, and I. Cayrefourcq (SOITEC) |
14:10 | 1398 | Low Temperature SiGe Layer Deposition with high Ge content using Reduced-Pressure Chemical Vapor Deposition from SiCl_2H2/GeH4 Precursors - M. Bauer, P. Tomasini, and C. Arena (ASM America, Inc.) |
14:30 | Fifteen-Minute Intermission |
Co-Chairs: R. Loo and R. Wise
Time | Abs# | Title |
---|---|---|
14:45 | 1399 | Directed Assembly and Strain Engineering of SiGe Films and Nanostruc-tures - M. Lagally (Univ. of WI - Madison) |
15:05 | 1400 | Chemical and Structural Characterization of Defects on Strained-Si/SiGe Heterostructures - W. Zhao (North Carolina State University) |
15:35 | 1401 | Minimizing Micro-Roughness of Strained Silicon Surfaces Without CMP - R. Harper (IQE Silicon Compounds) |
15:55 | 1402 | A Comparative Study of Strain Field in Strained-Si on SiGe-On-Insulator and SiGe Virtual Substrates - K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, and K. Nakajima (Tohoku University) |
16:15 | 1403 | Effects of Hydrogen Annealing on Heteroepitaxial-Ge@Layers on Si : Surface Roughness and Electrical Quality - A. Nayfeh, C.O. Chui, K. Saraswat (Stanford University), and T. Yonehara (Canon Inc) |