Devices and Materials of Oxide Thin-Film Transistors

ECS Meeting Short Course

Thin film transistors (TFTs) and MOSFETs (metal–oxide–semiconductor field-effect transistors) are two solid state devices critical to the two largest electronic industries, i.e., flat panel displays and integrated circuits. There is a need to introduce the fundamental science and updated technology development of TFTs to scientists and engineers who are working or interested in exploring opportunities in this kind of device. The amorphous silicon TFT has been the backbone of large area active matrix liquid crystal displays. However, its low field effect mobility greatly limits applications on many high speed displays and electronic products. The oxide TFT has emerged as the leading device for these products.

The ECS TFT symposium series has been held for 32 years, making it the longest continuously held TFT meeting in the world. In this short course, leading experts in the world review fundamental principles and limitations on the devices and materials of oxide TFTs. Future development trends are also discussed.

Course Outline
  • Introduction: Discussion of the position of oxide TFTs in solid state science and technology
  • Device physics in oxide TFTs
    • Operation principles
    • Reliability issues
    • Performance limits
    • P-channel oxide TFTs
  • Materials properties in oxide TFTs
    • Semiconductors
    • Gate dielectrics
    • Source/drain metals
    • Passivation materials
About the instructors

Hideo Hosono is an Honorary and Institute Professor and Founding Director of the Materials Research Center for Element Strategy of the Tokyo Institute of Technology, and Distinguished Fellow and Group Leader of the National Institute of Materials Science. He is a well-known pioneer of transparent oxide semiconductors, iron-based superconductors, and inorganic electride materials. His proposal of a materials design concept for transparent amorphous oxide semiconductors with high electron mobility in 1995, and first TFT demonstration of crystalline (Science, 2003) and amorphous IGZO (Nature, 2004) are milestones in the field. These two papers are cited ~2,800 times in Science and ~7,500 times in Nature. Prof. Hosono received the 2018 Materials Research Society Von Hippel Award; 2016 Japan Prize; 2015 American Physical Society James C. McGroddy Prize for New Materials; and 2011 Society for Information Display Jan Raychman Prize. He is a Fellow of the Royal Society and Society for Information Display. The Tokyo Metropolitan University awarded his PhD in 1982. Prof. Hosono’s total citation is 151,500 (Google Scholar) and h-index is 142 as of August 2021.

Michael Shur is the Patricia W. and Sheldon Roberts Professor of Solid State Electronics at Rensselaer Polytechnic Institute. He was a co-founder and Vice President of Sensor Electronics Technology, Inc. (a leading producer of deep ultraviolet LEDs) and founder or co-founder of several other startups, including Electronics of the Future, Inc. He received his MSEE with Honors from St. Petersburg Electrotechnical University (LETI), and PhD in Physics and Dr. Phys. Math. Sc. from the A. F. Ioffe Institute of Physics and Technology. Prof. Shur holds honorary doctorates from St. Petersburg State Technical University and the University of Vilnius. He is a Fellow of The Electrochemical Society and the National Academy of Inventors; received the 2015 ECS Electronic and Photonics Award; and served as the 2014 ECS Thin-Film Transistors Symposium Co-chair. The US Small Business Administration presented Prof. Shur with the Tibbetts Award for Technology Commercialization at the White House. The author, co-author, or editor of more than 30 books, he holds over 400 patents and patent applications for a wide variety of microelectronic innovations. His total citation is 54,389 (Google Scholar) and h-index from the past five years of 106.