Recent advances in III-nitride heterostructures continue to push the boundaries of high-frequency and high-power device performance. A new study, “Demonstrating the Effects of Growth Temperatures of Al(In)GaN Back Barrier on Transport Properties of InAlGaN/GaN Heterostructures,” takes a close look at how carefully tuning growth conditions can directly shape electronic behavior at the nanoscale.
In this article, the authors—Hoang-Tan-Ngoc Nguyen, Rahul Rai, Quoc-Huy Nguyen, Quoc Viet Hoang, Ngoc Quang Huy Dinh, Chan-Yuen Chang, Chien-Wei Chen, You-Chen Weng, Hao-Chung Kuo, Ching-Ting Lee, and Edward-Yi Chang—investigate how the growth temperature of an Al(In)GaN back barrier fabricated using metal-organic chemical vapor deposition (MOCVD) influences the structure and performance of InAlGaN/GaN heterostructures. By minimizing the temperature gap between the channel and back barrier layers, the researchers achieved highly coherent growth with smooth surfaces, sharp interfaces, and no detectable threading dislocations. These structural improvements translated into measurable performance gains: higher electron mobility, reduced sheet carrier density, and stronger electron confinement. (more…)











