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Recent advances in III-nitride heterostructures continue to push the boundaries of high-frequency and high-power device performance. A new study, “Demonstrating the Effects of Growth Temperatures of Al(In)GaN Back Barrier on Transport Properties of InAlGaN/GaN Heterostructures,” takes a close look at how carefully tuning growth conditions can directly shape electronic behavior at the nanoscale.

In this article, the authors—Hoang-Tan-Ngoc Nguyen, Rahul Rai, Quoc-Huy Nguyen, Quoc Viet Hoang, Ngoc Quang Huy Dinh, Chan-Yuen Chang, Chien-Wei Chen, You-Chen Weng, Hao-Chung Kuo, Ching-Ting Lee, and Edward-Yi Chang—investigate how the growth temperature of an Al(In)GaN back barrier fabricated using metal-organic chemical vapor deposition (MOCVD) influences the structure and performance of InAlGaN/GaN heterostructures. By minimizing the temperature gap between the channel and back barrier layers, the researchers achieved highly coherent growth with smooth surfaces, sharp interfaces, and no detectable threading dislocations. These structural improvements translated into measurable performance gains: higher electron mobility, reduced sheet carrier density, and stronger electron confinement. (more…)

We are pleased to spotlight a publication from the ECS Journal of Solid State Science and Technology (JSS):

“Low-Damage Atomic Layer Etching for Contact Resistance Reduction in Millimeter Wave AlGaN/GaN HEMTs on Si” (DOI: 10.1149/2162-8777/ae1ced) by Hsuan-Yao Huang et al. (2025) —available fully open access.

In this work, the authors address one of the key bottlenecks for high-frequency GaN electronics: ohmic contact resistance and accompanying device damage in high-electron-mobility transistors (HEMTs) built on Si substrates. Conventional etching methods for the ohmic-recess process often introduce plasma-induced damage, rough surfaces, and degraded channel performance. (more…)

Interest in silicon carbide (SiC) materials continues to grow—as witnessed by Alain E. Kaloyeros’ and Barry Arkles’ open access article in the ECS Journal of Solid State Science and Technology (JSS). The Electrochemical Society (ECS) proudly celebrates “Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications – Part I Thermal and Plasma CVD,” which has consistently ranked among the Top Read articles across the ECS journals platform. 

The Electrochemical Society (ECS) proudly celebrates the continued success of “Origin and Innovations of CMP Slurry” by Dr. Hitoshi Morinaga, published in the ECS Journal of Solid State Science and Technology (JSS) as part of the Focus Collection, “Chemical Mechanical Planarization (CMP): Past, Present, and Future in Honor of S. V. Babu” (DOI: 10.1149/2162-8777/ad5fb6).

Since its publication just over a year ago, Dr. Morinaga’s article has remained on JSS’s most-read list, earning over 6,000 downloads and seven Web of Science citations. A dedicated ECS member since 1999, and an active contributor to the ECS Electronics and Photonics Division and ECS Japan Section, Dr. Morinaga’s work reflects both technical excellence and deep engagement with our community.

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ECS announces that the ECS Journal of Solid State Science and Technology (JSS) and Journal of The Electrochemical Society (JES) are now included in publishing agreements with the University of California Digital Library and the French higher education and research institutions’ Couperin consortium. (more…)