Interest in silicon carbide (SiC) materials continues to grow—as witnessed by Alain E. Kaloyeros’ and Barry Arkles’ open access article in the ECS Journal of Solid State Science and Technology (JSS). The Electrochemical Society (ECS) proudly celebrates “Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications – Part I Thermal and Plasma CVD,” which has consistently ranked among the Top Read articles across the ECS journals platform.