Celebrating the Sustained Impact of “Silicon Carbide Thin Film Technologies” in JSS

Interest in silicon carbide (SiC) materials continues to grow—as witnessed by Alain E. Kaloyeros and Barry Arklesopen access article in the ECS Journal of Solid State Science and Technology (JSS). The Electrochemical Society (ECS) proudly celebrates “Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications – Part I Thermal and Plasma CVD,” which has consistently ranked among the Top Read articles across the ECS journals platform. 

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SiC thin films have emerged as a cornerstone of next-generation electronic, optoelectronic, and energy systems, and this article continues to advance the global conversation around their fabrication and performance. Its comprehensive exploration of thermal and plasma chemical vapor deposition (CVD) methods positions it as a foundational reference for researchers seeking to improve processing control, enhance film quality, and enable new applications across semiconductor and materials science domains. 

The article’s influence extends well beyond ECS readership. Citation in leading scientific publications including Materials Today and Optical Materials underscores its cross-disciplinary relevance and contribution to ongoing innovation in thin-film technology. 

Expanding access through open science

Published open access, this work is freely available to the entire materials science community. ECS’s commitment to open science ensures that transformative research like this reaches the widest possible audience—accelerating discovery, collaboration, and technological progress worldwide. 

ECS congratulates the authors and thanks the JSS community for their continued engagement and contributions. Articles like this exemplify the Society’s mission to advance theory and practice at the intersection of electrochemistry and solid-state science. 

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