We are pleased to spotlight a publication from the ECS Journal of Solid State Science and Technology (JSS):
“Low-Damage Atomic Layer Etching for Contact Resistance Reduction in Millimeter Wave AlGaN/GaN HEMTs on Si” (DOI: 10.1149/2162-8777/ae1ced) by Hsuan-Yao Huang et al. (2025) —available fully open access.
In this work, the authors address one of the key bottlenecks for high-frequency GaN electronics: ohmic contact resistance and accompanying device damage in high-electron-mobility transistors (HEMTs) built on Si substrates. Conventional etching methods for the ohmic-recess process often introduce plasma-induced damage, rough surfaces, and degraded channel performance. (more…)