Focus Issue on Gallium Oxide Based Materials and Devices II

Call for Papers

ECS Journal of Solid State Science and Technology
Focus Issue on Gallium Oxide Based Materials and Devices II

This issue of ECS Journal of Solid State Science and Technology is the second in a series that aims to cover the growth, characterization, processing, and device applications of Ga2O3. GaN and SiC based wide bandgap device technologies have matured and become limited by fundamental material properties. A new class of oxide wide band gap materials is emerging (gallium oxide and aluminum gallium oxide) that offers potentially improved figure of merit over GaN and SiC for power devices. The availability of Ga2O3 single crystals and epitaxial films with large area and excellent quality has led to renewed interest in this ultra-wide bandgap semiconductor for solar-blind photodetectors, sensors, and power electronics. Topics of interest include, but are not limited, to the following:

  • Bulk crystal growth
  • Epitaxy and thin film deposition
  • Binary and ternary alloys involving Al and In and their miscibility
  • Properties of different polytypes
  • Heterostructures with p-type oxides
  • Doping and defects
  • Characterization of electrical, transport, thermal, optical, and structural properties
  • Ohmic and Schottky contacts
  • Processing, including etching and polishing, ion implantation, annealing
  • Heat dissipation and thermal management
  • Electronic and opto-electronic devices, power devices, sensors, energy harvesting devices
  • Modelling and simulation of devices and properties

Accepting Submissions: December 26, 2019 | Submission Deadline: March 25, 2020

Guest Editors

Steve Pearton, University of Florida, USA | spear@mse.ufl.edu
Jihyun Kim, Korea University, Korea | hyunhyun7@korea.ac.kr
Alexander Polyakov, National University of Science and Technology
MISiS University, Russia | aypolyakov@gmail.com
Holger von Wenckstern, Universität Leipzig, Germany | wenckst@uni-leipzig.de
Rajendra Singh, Indian Institute of Technology Delhi, India | rsingh@physics.iitd.ac.in
Xing Lu, Sun Yat-sen University, China | eexlu@connect.ust.hk

Technical Editor

Fan Ren, University of Florida, USA | ren@che.ufl.edu

Editor-in-Chief

Krishnan Rajeshwar, University of Texas at Arlington, USA | rajeshwar@uta.edu

— Submit manuscripts here —

(At the time of submission, indicate that the paper is intended for a focus issue and select Focus Issue on
Gallium Oxide Based Materials and Devices II.)


NEW FOR 2020: If selected at submission, accepted papers will be published online in the ECS Digital Library within 24 hours of final acceptance. The version of record will be published online within approximately 10 days of final acceptance.

All papers published in this focus issue will be OPEN ACCESS at NO COST to the authors. The issue will be created online as the articles are accepted, with the final article published by September 2020.