Symposium: G03—SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10
Deadline for Submitting Abstracts:
April 22, 2022
Symposium focus: The 10th International SiGe, Ge, & Related Compounds: Materials, Processing, and Devices Symposium is the 242nd ECS Meeting’s G03 Symposium. This meeting provides a forum for reviewing and discussing materials- and device-related aspects of SiGe, Ge, and related compounds. The 10 areas of interest are:
- Heterojunction Bipolar Transistors
- FET Technology
- Emerging Applications
- Process and Integration
- Strain Engineering
- Surfaces and Interfaces
- Related Compounds
- Metrology & Characterization
Ten committees—composed of leading experts from universities, research institutes, and the semiconductor industry around the world—have organized two plenary and 34 invited talks. Best Student Paper Awards will be presented.
Please see the symposium website for more details, including information on the invited speakers; 10 committees corresponding to the 10 areas of interest; and prior nine symposiums in the series. Authors with questions can contact lead organizer Qizhi Liu at email@example.com, and/or the 10 committee chairs.
Check the Call for Papers for more information.