Symposium D01: Metal, Dielectrics, and Semiconductors for Nanoelectronics 18
Deadline for Submitting Abstracts: April 23, 2021
Symposium focus: Recently, AI hardware-related materials and devices have attracted significant interest in the semiconductor research community. New devices, metals, and dielectrics are being considered for AI, in-memory computing, and neuromorphic computing. Devices such as resistive RAM, ferroelectric RAM, and phase-change memory (PCM), are taking the lead to reduce power requirements. The processing and reliability of these devices have not been explored. In addition, 2-D semiconductor materials and devices involving MoS2; WSe2; and the growth, characterization, and modeling of other metal dichalcogenides, graphene, silicene, and germanene; are also taking center stage. Nanoelectronics and nanotechnology systems involving NC-FETs, FinFET, multi-gate MOSFETs, nanotubes, nanowires, quantum dots, spintronics, plasmonics, and tunnel FETs are receiving considerable attention regarding integration into semiconductor manufacturing.
The symposium will feature invited speakers from around the world. Young investigators including senior PhD students and early career researchers are encouraged to submit their work. We encourage the submission of abstracts on all topics related to material science, modeling, reliability, and manufacturing involving metal, dielectrics, and semiconductors for these research areas.
Check the Call for Papers for more details.