244th ECS Meeting Topic Close-up: H04 – Gallium Nitride and Silicon Carbide Power Technologies 13

Topic Close-up #8


H04—Gallium Nitride and Silicon Carbide Power Technologies 13

Deadline for submitting abstracts:
April 7, 2023

For additional information on 244th ECS Meeting symposia, consult more topic close-ups.

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Symposium focus: The symposium encompasses the state of the art in research and development of GaN and SiC wide bandgap semiconductors as well as ultra-wide bandgap semiconductors such as gallium oxide and high Al-content AlGaN for power electronic applications. All aspects are covered including bulk and thin film growth; defect characterization and reduction approaches; device fabrication technologies; device degradation and failure analysis; packaging and thermal management; homogeneous and heterogeneous chip-scale integration; and manufacturing cost and yield improvement approaches. The symposium includes an eclectic mix of invited speakers from academia, industry, and national laboratories from Europe, North America, and Asia.

For more information, please consult the Call for Papers


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