Join us in celebrating the authors of the article, “A CMOS-Compatible Si Nanowire Resistance Temperature Sensor Based on Low-Temperature-Processed ZnO Layer,” for achieving top-read status in the ECS Journal of Solid State Science and Technology this week!
Authored by Darragh Buckley, Alex Lonergan, and Colm O’Dwyer, this innovative study explores the integration of a ZnO-coated silicon nanowire sensor fabricated through a CMOS-compatible process. With its excellent temperature sensitivity and low thermal budget, this work offers promising applications in the field of advanced microsystems and wearable electronics.
We applaud the authors for their impactful contribution to solid state science and encourage our community to explore this cutting-edge research.