Jian-Sian Li
Jian-Sian Li
Micron Technology
University of Florida
Date: November 19, 2025
Time: 1300–1400h ET
This talk shows how integrating p-type NiO to form NiO/Ga₂O₃ hetero-junction rectifiers overcomes that barrier, enabling record-class break-down and Ampere-class operation. It covers device structure/process optimization, thermal stability to high temperatures, and radiation response—with direct ties to today’s priorities: EV fast charging, AI data‑center power systems, and aerospace/space‑qualified power electronics.
Learn about:
- A practical pathway to p–n Ga₂O₃ power diodes via NiO, including bilayer/guard-ring design and edge termination informed by TCAD and microscopy.
- Performance limits and trade-offs: Routes to >13.5 kV breakdown at small diode and 33 Amp operation at large diode.
- Understand device reliability under stress: High-temperature be-havior and irradiation effects with recovery/annealing insights for harsh environments.
Presenter
Jian-Sian Li is a Metrology Development Engineer at Micron Technology, specializing in advanced semiconductor fabrication and characterization. He transitioned to industry after completing a PhD in Chemical Engineering at the University of Florida in 2024. His research focused on NiO/β-Ga₂O₃ heterojunction power rectifiers, including device design, process optimization, fast switching, high-temperature stability, and radiation tolerance (γ, neutron, proton). His work includes extensive electrical characterization and microscopy/TCAD analysis supporting device physics and reliability in harsh environments. Dr. Li completed BS and MS degrees at National Taiwan University (2015, 2018), with research spanning phoretic/electrokinetic colloids, polymers for OFETs/PSCs, and solid state polymer electrolytes for Li-ion batteries. His contributions have been recognized with awards including the ECS Bruce Deal & Andy Grove Young Author Award.
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