Defects in Wide Band Gap Semiconductors

Workshop on Defects in Wide Band Gap Semiconductors
September 23, 2014
University of Maryland, College Park

Maryland Nano Center

Call for abstracts.

CALL FOR ABSTRACTS

Abstracts accepted in the following categories:

GALLIUM NITRIDE AND SILICON CARBIDE AND RELATED COMPOUNDS

  • Origin of defects in wide band-gap semiconductors
  • Extended defects in wide band-gap semiconductors
  • Defect reduction strategies
  • Atomic level control of material growth
  • Growth optimization and growth yield
  • Defect dynamics in extreme environments

WIDE BANDGAP POWER DEVICES

  • Defect-device performance-reliability correlations
  • Defect-manufacturing yield correlations
  • Role of defects in wide bandgap power electronics
  • Defect modeling and defect-device performance models
  • Defect characterization, in-situ and in real time
  • Advanced defect characterization in both ground and excited states
  • Defect modeling in ground and excited states
  • Manufacturing yield and cost reduction strategies

Instructions and submission template.

DEADLINE JULY 28

Atomic Layer Etching and Cleaning

Here’s our latest Call for Papers:

Atomic Layer Etch (ALEt) and Atomic Layer Clean (ALC) are emerging as enabling technologies for sub 10nm technology nodes. At these scales performance will be extremely sensitive to process variation.

Atomic layer processes are the most promising path to deliver the precision needed. However, many areas of ALEt and ALC are in need of improved fundamental understanding and process development. This focus issue will cover state-of-the-art efforts that address a variety of approaches to ALE and ALC.

Topics of interest include but are not limited to:

  • Surface reaction chemistry and its impact on selectivity
  • Plasma ion energy distribution and control methods
  • Novel plasma sources and potential application to ALEt & ALC
  • Innovative approaches to atomic layer material removal
  • Novel device applications of ALEt & ALC
  • Process chamber design considerations
  • Advanced delivery of chemicals to processing chambers
  • Metrology and control of ALEt & ALC
  • Device performance impact
  • Synthesis of new chemistries for ALEt & ALC application
  • Damage free surface defect removal
  • Process and discharge modeling

FIND OUT MORE!

Deadline for submission of manuscripts | December 17, 2014

Posted in Call for Papers
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