AiMES 2018 Topic Close-Up: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 8

Deadline for Submitting Abstracts
March 16, 2018
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Meeting speakerTopic Close-up #9

Symposium G03: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 8

Symposium Focus: This meeting is the 8th International ECS SiGe Symposium for the past 16 years ( It will provide a forum for people from industry, research institutions, and academics around the world to gather together in an unique and relaxed environment, reviewing and discussing materials and device related aspects of SiGe, Ge, and Related Compounds (Group IV incl. C and Sn alloys, and III/V on Si, as well as 2D materials). There are 10 areas of interests covering very broad spectrum from devices to fundamental material characterization, to stimulate information exchange and innovations, 1) Heterojunction Bipolar Transistors, 2) FET Technology, 3) Optoelectronics, 4) Epitaxy, 5) Emerging Applications, 6) Processing, 7) Strain Engineering, 8) Surfaces and Interfaces, 9) Related Compounds, 10) Metrology and Characterization.

Notable Attributes: More than 40 invited talks from technical leaders in their fields are going to be given in the above 10 technical areas; an evening workshop with a panel of distinguished experts will discuss issues related to the future of nano electronics, in a fun and enlightening environment; and posters are going to be reviewed by a panel for the Best Poster Award.

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