Co-Chairs: M.J. Deen and K.B. Sundaram
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:50 | Introductory Remarks by M.J. Deen, R.K. Ulrich, C.L. Claeys and K.B. Sundaram | ||
| 9:00 | 541 | The Effects of Oxidation on the Optical Properties of Amorphous SiC Films - K. Sundaram and Z. Alizadeh (University of Central Florida) | |
| 9:20 | 542 | Electrical Characterization of Low Thermal Budget Gate Oxides on Si/Si1-xGe_x/Si Substrates - A. Sareen, P. Lundgren, and S. Bengtsson (Chalmers University of Technology) | |
| 9:40 | 543 | Microstructural Evolution during Annealing of Low-Dose Low-Energy SIMOX Implanted at 65keV - B. Johnson, P. Anderson, S. Seraphin (University of Arizona), and M. Anc (Ibis Technology Corporation) | |
| 10:00 | 544 | Preparation of Copper-Aluminum Oxide Films by Solution Method - K. Shimokawa, K. Tonooka, and O. Nishimura (Hokkaido National Industrial Research Institute) | |
| 10:20 | Twenty-Minute Intermission |
Co-Chairs: K.B. Sundaram and M.J. Deen
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:40 | 545 | On the Inherent Robustness of Silicon Epitaxy - R. Spivak-Roshal and J.P. Doench (Sumitomo SiTiX Silicon) | |
| 11:00 | 546 | Behavior of Zirconium in Silicon Crystals - M. Koizuka and M. Kase (Fujitsu Limited) | |
| 11:20 | 547 | Junction Termination for Very Deep-Trench Devices - H. Hakim, J.-P. Laur, and J.-L. Sanchez (LAAS-CNRS) | |
| 11:40 | 548 | Study of a New Anodic Material for SOFC Operated at Intermediate Temperature Under Methane - A.L. Sauvet and J. Fouletier (INPG, UJF et CNRS) |
Co-Chairs: C.L. Claeys and R.K. Ulrich
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 549 | Removal Rate Study in Two Type of Slurry with Polish Pad - B.-T. Lin and C. Lee (Colleague of TSMC) | |
| 2:20 | 550 | A Quasi-Frozen Junction Polymer Light-Emitting Electrochemical Cell with Imidazolium Salt as Ionic Conductor - Y. Li, C. Yang, and G. He (Chinese Academy of Sciences) | |
| 2:40 | 551 | A Polymer Humidity Sensor Stabilized against Oxidative Gases and Its Signal Processing Circuits - S. Nakagawa, A. Shibue, K. Namba, and K. Ohe (TDK Co. Technical Center) | |
| 3:00 | 552 | 3 D Volume Holographic Data Storage - M. Thomas (Colossal Storage Corporation) | |
| 3:20 | 553 | Quantification of the Sensitivity to Environment in P(phosphor)-Doped and B(Boron)-P-Doped Silicate Glasses(PSG and BPSG) - S.-J. Oh (Hyundai Electronics Industries Co., Ltd.) | |
| 3:40 | 554 | Reacitivity of Carbon Monoxide with Hastelloy. Determination of Activation Energy for the Reaction of Carbon Monoxide with Nickel - E. Witt, G. Leggett, and S. Mankowsky (Millipore Corporation) | |
| 4:00 | 555 | Study of Low Pressure Chemical Vapor Deposition (LP-CVD) Silicon Nitride (Si3N4) Haze Mechanism and Solution - W.-J. Liu (Wei-Jen Liu) | |
| 4:20 | 556 | Identification of Silicon Crystalline Defects on Epi-Wafer in Wafer Fabrication - H. Y. N. (Chartered Semiconductor Mfg Ltd) |