199th Meeting - Washington, DC

March 25-30, 2001

Renaissance Washington DC Hotel

Call for Papers

Deadline for Abstracts is October 1, 2000!

A1--GENERAL SOCIETY STUDENT POSTER SESSION

(All Divisions and Groups)

This Poster Session provides a forum for graduate and undergraduate and undergraduate students to present research results of general interest to the Society. The purpose of this session is to foster and promote work in both electrochemical and solid-state science and technology, and to stimulate active student interest and participation in the Society. A competition for the two best posters will be part of the session. A cash prize of $250 and a scroll will be awarded to the winning student authors. In the case of coauthors, a maximum award of $750 per winning poster will be divided equally between student coauthors. The awards will be made without regard to sex, citizenship, race, or financial need.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Session Organizers: P.S. Fedkiw, Department of Chemical Engineering, North Carolina State University, 113 Riddick Laboratories, Box 7905, Raleigh, NC 27695-7905 USA, Phone: (919) 515-3572, Fax: (919) 515-3465, E-mail: peter_fedkiw@ncsu.edu; and J.M. Fenton, Department of Chemical Engineering, U-222, Room 208, University of Connecticut, Storrs, CT 06269 USA, Phone: (860) 486-2490, Fax: (860) 486-2959, E-mail: jmfent@engr.uconn.edu.

B1--BATTERY/ENERGY TECHNOLOGY JOINT GENERAL SESSION

(Battery/Energy Technology)

Papers are solicited on the fundamental and applied aspects of energy conversion, storage and transmission not covered by other symposia at this meeting. Of particular interest are new materials and processes for batteries and fuel cells and novel energy conversion technologies. All types of batteries and fuel cells are of interest including aqueous electrolyte systems such as nickel-cadmium, zinc-air, lead-acid and nickel-metal hydride as well as non-aqueous electrolyte batteries and fuel cells. Papers on performance models are also welcome.

Abstracts, suggestions and inquiries should be sent electronically to the ECS Headquarters Office and to the Session Organizers: E.S. Takeuchi, Wilson Greatbatch, Ltd, 10,000 Wehrle Drive, Clarence, NY 14031 USA, Phone (716) 759-5358, Fax: (716) 759-5480; E-mail: etakeuchi@greatbatch.com; and T.F. Fuller, 300 Chestnut Hill Road, Glastonbury, CT 06033-4153 USA, Phone: (860) 727-2440, Fax: (860) 727-2139, E-mail:fullert@ifc.utc.com.

C1--DIRECT METHANOL FUEL CELLS

(Battery/Energy Technology/Physical Electrochemistry)

Polymer electrolyte fuel cells operating via direct oxidation of methanol are an attractive emerging power source with diverse potential applications such as battery replacement and transportation. This symposium will address recent advances in the science and technology of these devices and their components. Topics of interest include: 1. Experimental studies of new polymer electrolytes; 2. Fundamental studies of electrocatalysts for DMFCs; 3. New electrode structures and compositions implemented in the cells, including studies of state-of-the-art electrocatalysts for both anode and cathode; 4. Modeling studies of single cells and systems; and 5. Development of stacks and issues related to their implementation in various applications.

Publication of a Proceedings Volume is planned before the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words by November 1, 2000. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: S. Narayanan, Jet Propulsion Laboratory, Electrochemical Technologies, 4800 Oak Grove Drive, MS 277-207, Pasadena, CA, 91109 USA, Phone: (818) 354-0013, Fax: (818) 393-6951, E-mail: s.r.narayanan@jpl.nasa.gov; T. Zawodzinski, Los Alamos National Laboratory, MS D429, P.O. Box 1663, Los Alamos, NM 87544-0600 USA, Phone: (505) 667-0925, Fax: (505) 665-4292, E-mail: zawod@lanl.gov; and S. Gottesfeld, Los Alamos National Laboratory, MS D429, P.O. Box 1663, Los Alamos, NM 87544-0600 USA, Phone: (505) 667-0853, Fax: (505) 665-4292, E-mail: gottesfeld@lanl.gov.

D1--POLYMER ELECTROLYTES FOR BATTERIES AND FUEL CELLS

(Battery/Physical Electrochemistry/Energy Technology)

Polymer electrolytes play key roles in emerging energy technologies such as lithium polymer batteries and polymer electrolyte fuel cells. This symposium will address recent advances in understanding and preparing new polymer electrolytes for batteries, fuel cells and closely related applications. Topics of interest include: 1. Fundamental experimental and theoretical studies of polymer electrolyte components; 2. New electrolytes, especially single ion conductors, and their performance in devices; 3. Stability issues related to device applications, including degradation processes, products and mechanisms at the electrolyte/electrode interface; 4. electrolyte properties in composite electrode systems; and 5. methods of fabrication of polymer electrolyte-based devices.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters office and to the Symposium Organizers: K.M. Abraham, 57 Colonial Road, Needham, MA 02492 USA, Phone: (781) 444-8453, E-mail: Ekemtec@aol.com ; and T. Zawodinski, Los Alamos National Laboratory, MS D429, P.O. Box 1663, Los Alamos, NM 87544-0600 USA, Phone: (505) 667-0925, Fax: (505) 665-4292, E-mail: zawod@lanl.gov.

E1--CORROSION GENERAL SESSION

(Corrosion)

Papers concerning all aspects of corrosion and associated phenomena in liquid and gaseous phases not covered by topic areas of other specialized Corrosion Division symposia at this Meeting are welcome. Theoretical analyses, experimental investigations, descriptions of new techniques for the study of corrosion, and analyses of corrosion products and films are of interest. Contributed papers will be programmed in some related order, depending on the titles and contents of the abstracts.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Session Organizer: G. S. Frankel, The Ohio State University, Department of Materials Science and Engineering, 477 Watts Hall, 2041 College Road, Columbus, OH 43210 USA, Phone: (614) 688-4128, Fax: (614) 292-9857, E-mail: frankel.10@osu.edu.

F1--STATE OF THE ART APPLICATION OF SURFACE AND INTERFACE ANALYSIS METHODS TO ENVIRONMENTAL MATERIAL INTERACTIONS: IN HONOR OF JAMES E. CASTLE'S 65th YEAR

(Corrosion/ASTM Committee 42/AVS)

Papers are solicited involving the current or potential application of in situ and ex situ surface or interface sensitive analysis methods to studies of environmental/materials interactions. The symposium will focus on both fundamental aspects of the methods and practical applications, especially those involving new or advanced materials. An important aspect of this third symposium in this series will be new methods, instrument or analysis advances, and current experimental limitations. An application focus will be research in newer areas (such as microbial induced corrosion) and advanced materials (corrosion of submicron features or nanoscale composites). Papers concerned with liquid or gaseous interactions with metals, semiconductors, ceramics, protective coatings, and composites are requested.

Keynote speakers will present tutorials covering the recent advances, advantages and limitations of both new and well-established techniques as well as relating these to important scientific and technological questions. The symposium will address issues related to probe and environmental effects as well as important experimental and analytical considerations. At least one session will focus on the solid-liquid interface.

Publication of a Proceedings Volume is being considered after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries are to be sent electronically to the ECS Headquarters Office and the Symposium Organizers: D.R. Baer, Pacific Northwest National Laboratory, Box 999 MS K8-93, Richland, WA USA 99352, Phone: (509) 376-1609. Fax: (509) 376-5106, E-mail: dr_baer@pnl.gov; C.R. Clayton, Department of Materials Science and Engineering, SUNY at Stony Brook, Stony Brook, NY 11794-2275 USA, Phone: (515) 632-8382, Fax: (516) 632-8381, E-mail: cclayton@ccmail.sunysb.edu; G.P. Halada, Department of Materials Science and Engineering, SUNY at Stony Brook, Stony Brook, NY 11794-2275 USA, Phone: (516) 632-8526, Fax: (516) 632-8052, E-mail: ghalada@ccmail.sunysb.edu; and G.D. Davis, DACCO SCI, Inc., 10260 Old Columbia Road, Columbia, MD 21046 USA, Phone: (410) 381-9475, Fax: (410) 381-9643, E-mail: gddaccosci@aol.com.

G1--CORROSION SENSORS

(Corrosion/Sensor)

This symposium will address all aspects of corrosion sensors. Sensors currently in use for laboratory measurements, for field monitoring, and in development for field monitoring are all desired. Sensors based on electrochemical, optical, magnetic, acoustic, thermal, and chemical principles are all welcome. Assuming sufficient papers, the symposium will be divided into sessions dealing with new sensors for laboratory measurements, field experience with sensors, new sensors in development for field use, and new principles discovered through the use of laboratory sensors.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: P.J. Moran, Mechanical Engineering Department, U.S. Naval Academy, Annapolis, MD 21401-5042 USA, Phone (410) 293-6501, Fax: (410) 293-3041, E-mail: moran@arctic.nadn.navy.mil, P. Vanysek, Department of Chemistry, Northern Illinois University, Dekalb, IL 60115 USA, Phone: (815) 753-6876, Fax: (815) 753-4802, E-mail: pvanysek@niu.edu; and R.G. Kelly, Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22903 USA, Phone: (804) 982-5783, Fax: (804) 982-5799, E-mail: rgkelly@virginia.edu.

H1--COLD ATMOSPHERIC PLASMA TECHNOLOGIES

(Dielectric Science and Technology/Energy Technology)

Cold Atmospheric Plasma (CAP) represents a new, rapidly growing subject of technological interest. non-equillibrium electron controlled processes in such a plasma offer non-conventional radical based reactive regimes at low temperatures. In the CAP systems, electrons exhibit much higher energy than ions regardless of a high collision frequency balancing the particle energies. Fast electrons activate particles while the bulk of the gas remains cold. Besides almost classical corona discharges, there are already new emerging CAP systems providing surprisingly good performance and reaction efficiency. It is clear that in many applications of plasmas there is a trend to extend processes to hgih pressures up to the atmospheric pressure. This simplifies experimental systems substantially and brings about economic advantages over conventional reduced pressure technologies, as the open systems at atmospheric pressure do not need expensive vacuum equipment.

This symposium will focus on: 1. Cold atmospheric plasma sources and methods of the plasma generation; 2. Processes in cold atmospheric plasmas and plasma diagnostics; 3. Generation and utilization of UV light from cold atmospheric plasma; 4. Inorganic and organic surface treatment and modification, and deposition of films; and 5. Environmental applications of cold atmospheric plasmas.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: H. Barankova, Uppsala University, Angstrom Laboratory, P.O. Box 534, 75121 Uppsala, Sweden, Phone: 46-18-471-3118, Fax: 46-18-555-095, E-mail: hana.barankova@angstrom.uu.se; L. Bardos, Uppsala University, Angstrom Laboratory, P.O. Box 534, 75121 Uppsala, Sweden, Phone: 46-18-471-3118, Fax: 46-18-555-095, E-mail: ladislav.bardos@angstrom.uu.se; D.W. Hess, Georgia Institute of Technology, Chemical Engineering, School of, 225 North Avenue NW, Atlanta, GA 30332-0100, Phone: (404) 894-5922, Fax: (404) 894-2866, E-mail: dennis.hess@che.gatech.edu.

H2--FOURTH INTERNATIONAL SYMPOSIUM ON ENVIRONMENTAL ISSUES WITH MATERIALS AND PROCESSES FOR THE ELECTRONICS AND SEMICONDUCTORS INDUSTRIES

(Dielectric Science and Technology/Electronics)

Recent increases in environmental awareness on issues such as global warming, greenhouse gases, ozone depletion, and toxic pollutants will have a profound effect on the process technologies used for electronic component manufacture. This symposium will focus on these issues with emphasis on the waste treatment and abatement of the materials causing such detrimental effects. Topics will focus on these issues with emphasis on the waste stream treatment and recovery, gas stream abatement and possible alternative chemistries. Both invited and contributed papers will be represented from industry, academia, and government.

The Following environmental areas of concern are suggested: 1. CVD and PVD metallization for semiconductor and electronics processing; 2. CMP processes, slurry chemistries; 3. Wet and Dry etch chemistries; 4. Heavy metal contaminants from plating and solder processes; 5. New and current dielectric processing and materials; 6. Photoresist solvents and materials; 7. Implant gases and abatement issues; 8. Passivation and barrier layers; 9. Encapsulation materials; and 10. III/V semiconductor materials and processes.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: L. Mendicino, Motorola Corporation, M/S K-10, 3501 Ed Bluestein Boulevard, Austin, TX 78721 USA, Phone: (512) 933-3938, Fax: (512) 933-6962, E-mail: ra1573@email.sps.mot.com; L. Simpson, Applied Materials, Inc., 9050 Capital of Texas Highway, Suite 320, Austin, TX 78759 USA, Phone: (512) 272-7606, Fax: (512) 272-7600, E-mail: logan_simpson@amat.com; and P.N. Gadgil, Gasonics International, 2730 Junction Avenue, San Jose, CA 95134-1909 USA, Phone: (408) 570-7789, Fax: (408) 570-7530, Email: prasad_gadgil@gasonics.com.

H3--SIXTH INTERNATIONAL SYMPOSIUM ON LOW AND HIGH DIELECTRIC CONSTANT MATERIALS: MATERIALS SCIENCE, PROCESSING, AND RELIABILITY ISSUES

(Dielectric Science and Technology/Electronics)

This symposium will emphasize all aspects of Low and High Dielectric Materials in Silicon and Compound Semiconductor Integrated Circuits, packaging of integrated circuits and microwave devices. In case of low dielectric constant materials, special emphasis will be placed on the issues related to the use of these materials in multilevel interconnections for ultra large scale integrated circuits. In case of high dielectric constant materials, special emphasis will be placed on the use of these materials for DRAM and as gate dielectric materials for sub 180 nm feature size integrated circuits. Papers are encouraged in all areas related to materials, processing, reliability, equipment, process integration and manufacturing.

Areas of interest include: 1. Fundamental issues in the synthesis and processing of low and high dielectric constant material systems; 2. Materials, processing and reliability issues related to low k dielectric materials with dielectric constant K, 3.84; 3. Materials, processing, and reliability issues related to Al and Cu multilevel interconnect (use of low K dielectric as the interlevel dielectric layer) systems; 4. Materials, processing and reliability issues related to high K dielectric (Ta2O5, BaSrTiO3, Pb LaZrTiO3 etc.) materials in DRAM; 5. Materials, processing and reliability issues related to high K dielectrics as gate dielectric materials for sub 180 nm feature size Si integrated circuits; 6. Issues related to the integration of low K materials in multilevel chip modules and other packaging systems; 7. Issues related to the integration of high K dielectric materials in microwave devices; 8. All aspects of equipment issues related to processing of low and K dielectric materials; and 9. All aspects of process integration issues of low and high K dielectrics.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: R. Singh, Department of Electrical and Computer Engineering, Clemson University, 102 Riggs Hall, Clemson, SC 29634 USA, Phone: (864) 656-0919, Fax: (864) 656-5910, E-mail: srajend@coe-nw.clemson.edu : H.S. Rathore, IBM Corporation, Dept 25M Zip AE1, East Fishkill Facility, Hopewell Junction, NY 12533 USA, Phone: (914) 892-2905, Fax:(914) 892-3039, E-mail: rathore@us.ibm.com; M.J. Loboda, Dow Corning Corporation, MS CO41A1, Midland, MI 48686 USA, Phone: (517) 496-6249, Fax: (517) 496-5121, E-mail: mark.loboda@dowcorning.co; S.S. Ang, Department of Electrical Engineering, 3217 Bell Engineering Center, University of Arkansas, Fayetteville, AR 72701 USA, Phone: (501) 575-7683, Fax: (501) 575-7967, E-mail: ssa@engr.uark.edu; R.P.S. Thakur, Steag Electronik Systems, 4425 Fortran Drive, San Jose, CA 95134 USA, Phone: (408) 935-2010, Fax: (408) 935-2775, E-mail: randir.thakur@agai.com; C.C. Schuckert, DuPont Co., 1201 Hopeton Road, Wilmington, DE 19807-3014 USA, Phone: (302) 658-4836, Fax: (302) 658-3330, E-mail: craig.c.schuckert@usa.dupont.com; and S.C. Sun, Taiwan Semiconductor Manufacturing Co., No. 9 Creation Road 1, Science Based Industrial Park, Hsinchu, Taiwan 300, Phone: (519) 933-3184, Fax: (519) 933-5497, E-mail: scsun@tsmc.com.tw.

I1--PROCESS CONTROL, DIAGNOSTICS, AND MODELING IN SEMICONDUCTOR DEVICE MANUFACTURING IV

(Dielectric Science and Technology/Electronics/High Temperature Materials)

This Symposium is aimed at bringing together the technical community involved in various aspects of process control, diagnostics, and modeling in semiconductor manufacturing. Processes of interest include, but are not limited to, CVD, PVD, PECVD, etching, RTP, cleaning, and lithography. Topics relating to automation, i.e., computer controlled feedback and/or feedforward of information for controlling a single process, or a series of processes, are also of interest.

Suggested topics include control methodologies, in situ measurement techniques, and modeling approaches. Papers focusing on the use of fundamental equipment/process models and real-time sensors to generate control strategies and controller designs are of particular interest. Other appropriate themes are the relationship between modeling and control, calibration techniques, and automation issues. Papers focusing on application to commercial tools are also welcome. The Symposium will consist of invited and contributed papers. Sessions will be organized around coherent subjects in order to facilitate discussion and focus on appropriate solutions to problems.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: M. Meyyappan, NASA Ames Research Center, Mail Stop 229-3, Moffet Field, CA 94035 USA, Phone: (650) 604-2616, Fax: (650) 604-5244, E-mail: meyya@orbit.arc.nasa.gov; D.J. Economou, Department of Chemical Engineering, University of Houston, Houston, TX 77204-4792 USA, Phone: (713) 743-4320, Fax: (713) 743-4323, E-mail: economou@uh.edu; S.W. Butler, Texas Instruments, Inc., P.O. Box 650311, MS 3701, Dallas, TX 75265 USA, Phone: (972) 995-4241, Fax: (972) 995-1916, E-mail: butler@spdc.ti.com; M.D. Allendorf, Sandia National Laboratories, MS 9052, P.O. Box 969, Livermore, CA 94551-0969 USA, Phone: (925) 294-2895, Fax: (925) 294-2276; E-mail: mdallen@sandia.gov and B. Herner, Matrix Semiconductor, 3230 Scott Boulevard, Santa Clara, CA 95054 USA, Phone: (408) 431-4187, Fax: (408) 969-4848, E-mail: brad@matrixsemi.com.

I2--SIXTH INTERNATIONAL SYMPOSIUM ON SILICON NITRIDE AND SILICON DIOXIDE THIN INSULATING FILMS

(Dielectric Science and Technology/Electronics/High Temperature Materials)

This symposium will provide a forum for the presentation and discussion of topics concerning all aspects of silicon nitride and silicon dioxide thin film technology. The objective is to link material studies and technological applications to allow for cl earer design and design processing considerations for the fabrication of devices and integrated circuits (VLSI/ULSI) which incorporate these thin insulating films. The symposium will include both invited and contributed papers. Topics will cover film preparation, characterization, passivations, modeling, processing, device physics, present applications, and future requirements of the insulators in developing ULSI and VHSIC technologies.

Both experimental and theoretical contributed papers are solicited from the following general areas: 1. Film preparation (CVD, LPCVD, plasma, ion implantation, sputtering, thermal nitridation, thermal oxidation, etc.) and characterization; 2. Film and fil m/substrate interface analysis by RBS, AES, XPS, SIMS, and other new and novel analysis techniques; 3. Passivation, charge transport and trapping, characteristics of traps, interface states, tunneling phenomena and dielectric breakdown; 4. Defects and imp urities and their effects on electronic and optical processes; 5. Electrical, chemical, physical and optical properties; 6. Multi-layer dielectric stacks and interfaces, nitridation/oxidation methodologies for thin gate dielectrics; 7. Silicon dioxide and /or silicon nitride films for nonvolatile semiconductor memories; 8. Insulators for multi-layer interconnect processes; 9. Insulating films on compound semiconductors (passivation studies, interfaces, electrical and optical properties of devices); 10. Pla sma science and plasma processing technology for silicon nitride and silicon dioxide films; 11. Quality verification, environmental effects, reliability, new applications and new devices; 12. Rapid thermal oxidation and nitridation, doped oxides and nitrides; 13. Novel isolation techniques including PBL, SEG, single wafer hipox, doped glasses; and 14. Radiation effects, hot carrier effects, etc.

Publication of a Proceedings Volume planned to be available after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters and the Symposium Organizers: K.B. Sundaram, School of Electrical Engineering and Computing, University of Central Florida, Orlando, FL 32816-2450 USA, Phone: (407) 823-5326, Fax: (407) 823-5835, E-mail: sundaram@mail.ucf.edu; M.J. Deen, Department of Electrical and Computer Engineering, CRL Room 220, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4K1, Phone: (905) 525-9140, ext. 27137, Fax: (905) 523-4407, E-mail: jamal@ece.eng.mcmaster.ca; D. Landheer, National Research Council of Canada, Institute of Microstructural Sciences, Ottawa, Onatario, Canada, K1A 0R6, Phone: (613) 993-0560, Fax: (613) 990-0202, E-mail: dolf.landheer@nrc.ca; W.D. Brown, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 USA, Phone: (501) 575-6045, Fax: (501) 575-7967, E-mail: wdb@engr.uark.edu; D. Misra, Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 USA, Phone: (973) 596-5739, Fax: (973) 596-5680, E-mail: dmisra@megahertz.njit.edu; M.D. Allendorf, Sandia National Labortories, MS 9052, PO Box 969, Livermore, CA 94551-0969 USA, Phone: (925) 294-2895, Fax: (925) 294-1004, E-mail: mdallen@sandia.gov; and R.E. Sah, Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, D-79108 Freiburg, Germany, Phone: 49-761-5159-175, Fax: 49-761-5159-400, E-mail: sah@iaf.fhg.de.

J1--MORPHOLOGICAL EVOLUTION IN ELECTRODEPOSITION

(Electrodeposition)

Morphology evolution encompasses shape, growth habit, microstructure, texture and topography of electrodeposits from atomic to macroscopic scales. Of particular interest are developments in control of morphology evolution for microscale fabrication where process technologies are changing rapidly. Engineering design of deposition processes will depend increasingly on understanding of the role of microscopic mechanisms as well as conventional processing parameters such as agitation and cell design.

This symposium will bring together those interested in control and optimization of morphology evolution in process technologies as well as fundamental aspects of morphology evolution in electrochemical deposition, including electrodeposition, electroless plating, electrocrystallization and related processes. Contributions are solicited in the following areas: shape evolution, filling, and bump formation in ULSI technology, mechanisms of nucleation and crystal growth, fractal and scaling analysis of roughness, dendrites, diffusion-limited aggregation, pattern formation, dynamic phase transitions, surface observation by scanning-probe microscopies, confocal microscopy and other in-situ techniques, mechanistic role of additives, nanostructures and compositionally modulated deposits, and modeling of transport, kinetics and surface processes in depositional growth.

Publication of a Proceedings Volume planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters and the Symposium Organizers: F. Argoul, Centre de Recherche Paul Pascal, Avenue A. Schweitzer, Pessac, F-33600 France, Phone: 33-556-84-5665, Fax: 33-55-68-45600, E-mail: argoul@crpp.u-bordeaux.fr; D.P. Barkey, University of New Hampshire, Department of Chemical Engineering, Kingsbury Hall, Durham, NH 03824, USA, Phone: (603) 862-1918, Fax: (603) 862-3747, E-mail: dpb@alberti.unh.edu; J.C. Bradley, Drexel University, Department of Chemistry, 32nd and Chestnut Streets, Philadelphia, PA 19104 USA, Phone: (215) 895-2647, Fax: (215) 895-1265, E-mail: bradlejc@post.drexel.edu; K. Kondo, Department of Applied Chemistry and Engineering, University of Okayama, 3-1-1, Tushimanaka, Okayama, 700-0082, Japan, Phone/Fax: 81-86-251-8085, E-mail: kkondo@cc.okayama-u.ac.jp.

K1--ELECTROCHEMICAL PROCESSING IN ULSI FABRICATION AND ELECTRODEPOSITION OF AND ON SEMICONDUCTORS IV

(Electrodeposition/Dielectric Science and Technology/Electronics)

Electrochemical processes are receiving much attention in microelectronic applications. The most prominent example at present is the electrochemical deposition of copper for interconnect wiring on silicon wafers. Another technology of high commercial impact is solder deposition for flip-chip interconnects. Many other electrochemical processes and techniques, at various stages of emergence and development, hold promise for the electronics industry and beyond; these include chemical-bath deposition of semiconductors and compounds, formation of heterojunctions and metal-semiconductor contacts, deposition of magnetic multi layers and nanowires, wet etching, chemical-mechanical polishing, electrolytic and electroless deposition of patterned structures, and scanning-probe patterning.

This symposium is intended to be a balanced forum for discussion of both the practical and fundamental aspects of electrochemical processes. Practical aspects of interest include: design and modeling of plating and etching equipment; thickness uniformity; patterning techniques; shape evolution and filling of high-aspect-ratio cavities; bath-composition control; integration of the electrochemical process with other process steps to make devices; device performance; electromigration, failure modes, and device reliability. Consideration is given to the multi-disciplinary technological challenges involved in implementing an electrochemical process in semiconductor manufacturing. Fundamental aspects of interest include: the initial stages of nucleation and growth as revealed by in-situ and ex-situ means such as SPM, X-ray techniques, and TEM; the influence of surface pretreatment; the action of additive molecules at electrode surfaces; structural and electrical characterization of interfaces (e.g., Schottky diode, ohmic contacts, heterojunctions). Much emphasis will be given to process-structure-property relationships, since process dynamics determine material and interfacial structure, which in turn determine numerous properties and ultimately device characteristics.

Contributions are solicited in the following areas: electroless and electrolytic plating of copper and copper alloys for chip wiring; integration aspects of chip metallization based on copper; failure and reliability of copper metallization especially as they relate to deposit properties and methods of deposition; influence of organic additives on shape evolution and deposit properties; processes for electrochemical deposition, removal, and patterning of lead-containing and lead-free solders for flip-chip interconnection; design and modeling of plating and etching tools; porous silicon formation and characterization; device isolation processing; anisotropic electrochemical processes for high levels of integration; electrochemical aspects of chemical-mechanical polishing (CMP) technology including mechanisms, slurry composition and performance, and process characterization and control; novel applications of electrochemical processes in ULSI fabrication; electrochemical deposition of magnetic thin films, multilayers and wires on semiconductor substrates; nanocontact formation and characterization; patterning using scanning-probe microscopy (SPM) for nanoelectronics applications; electrochemical deposition of microelectromechanical devices including LIGA; electrodeposition of compound semiconductors; deposition phenomena related to impurities and to wafer cleaning.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: P.C. Andricacos, IBM T.J. Watson Research Center, P.O. Box 218, Box 04-204, Yorktown Heights, NY 10598-0218 USA, Phone: (914) 945-2683, Fax: (914) 945-4520, E-mail: panos@watson.ibm.com; P.C. Searson, Department of Materials Science and Engineering, The Johns Hopkins University, 102 Maryland Hall, Baltimore, MD 21218 USA, Phone: (410) 516-8774, Fax: (410) 516-5293 E-mail: searson@jhu.edu; C. Reidsema-Simpson, Motorola, Advanced Products Research and Development Laboratory, 3501 Ed Bluestein Boulevard, MS K-10, Austin, TX 78721 USA, Phone: (512) 933-3184, Fax: (512) 933-6962, E-mail: ra1557@email.sps.mot.com; P. Allongue, Laboratoire de Physiques des Liquides et Electrochimie, CNRS-UPR15, Universite Paris 6, 4 place Jussieu, Tow 2225, 75005 Paris, France, Phone: 33-01-44-274147, Fax: 33-01-434-274074, E-mail: pa@ccr.jussieu.fr; J.L. Stickney, Department of Chemistry, University of Georgia, Athens, GA 30602 USA, Phone (706) 542-1967, Fax: (706) 542-9453, E-mail: stickney@sunchem.chem.uga.edu; and G.M. Oleszek, Department of Electrical and Computer Engineering, University of Colorado, P.O. Box 7150, Colorado Springs, CO 80933-7150 USA, Phone: (719) 593-3490, Fax: (719) 548-9404, E-mail: gmoleszek@eas.uccs.edu.

L1--ELECTRODEPOSITION OF NANOSCALE AND NANOPHASE MATERIALS II

(Electrodeposition/Physical Electrochemistry)

Nanometer-scale materials have properties which are intermediate between those of discrete molecules and extended-network solids. The optical, electrical, magnetic, mechanical, and chemical properties of these quantum-confined materials can be controlled by varying the size. Electrodeposition is an ideal synthesis technique for materials in the nanoregime, since the low processing temperatures minimize interdiffusion and grain growth, films can be deposited onto complex shapes, composition can be controlled through the applied overpotential, nonequillibrium phases can be produced, and in situ characterization and feedback techniques can be used to both follow and control the deposition process in real time.

Papers are solicited that address the deposition and characterization of nanoscale materials such as quantum dots and wires, and nanophase materials such as superlattices, multilayers, and nanocomposites. Topics to be emphasized are electrochemical epitaxial growth, self-assembly, control of confinement dimensions and distributions, mechanistic studies using in situ techniques, nanoscale and nanophase semiconductors and magnetic materials, quantum dots and wires, superlattices, low-dimensional solids, electrochemistry in nanoliter volumes, characterization techniques including diffraction and scanning probe microscopy, and studies of the effects of strain and quantum confinement on the optical, electrical, and magnetic properties of materials.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and the Symposium Organizers: J. A. Switzer, University of Missouri - Rolla, Department of Chemistry, 103 Materials Research Center, Rolla, MO 65409-1170 USA, Phone: (573) 341-4383, Fax: (573) 341-2071, E-mail: jswitzer@umr.edu; and J.L. Delplancke, 262 Chemin des Dames, 7090 Braine-le-compte, Belgium, Phone: 32-2-650-3648, Fax: 32-2-650-3653, E-mail: jdelpla@ulb.ac.be.

L2--MOLECULAR STRUCTURE OF THE SOLID-LIQUID INTERFACE AND ITS RELATIONSHIP TO ELECTRODEPOSITION - III

(Electrodeposition/Physical Electrochemistry)

New techniques for characterizing the solid-liquid interface at the molecular scale have the potential for guiding fundamental advances related to electrodeposition. Events at the molecular scale play a significant role in determining product quality in many technological processes. The goal of this symposium is to draw together the collective interests of scientists and engineers skilled in new techniques and as well as knowledgeable about electrodeposition applications.

The symposium will provide nonelectrodeposition scientists with a platform for recognizing how their skills can be engaged in fruitful new areas of research. Papers are solicited on in situ and ex situ methods, time- and frequency-domain modulation, surface microscopies, microsensors and microbalance methods, linear and nonlinear optical spectroscopies, mathematical models at both continuum and non-continuum levels, and numerical techniques for simulating system behavior over wide ranges of time- and distance-scales.

The symposium will provide a forum for the electrodeposition community on new advances in understanding of key phenomena such as the role of surface and volume defects, the evolution of morphology, photoeffects, adsorption, solvent effects, the role of additives, mechanisms of surface traffic flow during deposition, surface films, hydrodynamic phenomena, and other such phenomena.

Abstracts, suggestions, and inquiries should be sent electronically to the Symposium Organizers: R.C. Alkire, University of Illinois, 600 South Mathews Avenue, Urbana, IL 61801 USA, Phone: (217) 333-0063, Fax: (217) 333-5052, E-mail: r-alkire@uiuc.edu; and D.M. Kolb, University of Ulm, D-89069, Ulm, Germany, Phone: 49-731-502-5400, Fax: 49-731-502-5409, E-mail: dieter.kolb@chemie.uni-ulm.de.

M1--III-NITRIDE BASED SEMICONDUCTOR ELECTRONIC AND OPTICAL DEVICES

(Electronics)

The purpose of this symposium is to bring together the crystal growth, device processing, circuit design and applications communities to discuss basic science and technology issues related to utilization of III-nitride based semiconductors. Papers are solicited in the following areas: 1. Substrates and bulk growth. 2. Epitaxial growth, especially for highly-doped layers. 3. High growth-rate methods. 4. Wet and dry etching techniques. 5. Ion implantation and diffusion. 6. Contact technology. 7. Fundamental optical, physical and electrical properties. 8. Materials and device characterization. 9. Novel applications for wide gap materials. 10. Reliability issues.

The program will consist of both invited and contributed papers. A tentative list of invited speakers includes: D. Bour (LumiLeds Lighting), W. K. Chen (NCTU, Taiwan), C. Gmachl (Bell Labs), M. E Coltrin (Sandia National Labs), W.Gebicki (Technical University of Warsaw), B. P. Gila (University of Florida), N. Grandjean (CNRS, France), M. Hong (Bell Labs), J. W. P. Hsu (Bell Labs), A. Khan (University of South Carolina), K. Kishino (Sophia University), H. Morkoc (Virginia Commonwealth University), J. Speck (University of Santa Barbara), J. F. Schetzina (North Carolina State University), and H. P. Tang (National Research Council of Canada).

Publication of a joint Proceedings Volume with the symposium on STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XXXIV is planned before the Meeting. A typed camera ready copy of the full proceedings volume manuscript and a list of key words is required by November 1, 2000. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after acceptance of abstracts.

Abstracts, question, and inquiries can be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: F. Ren, Department of Chemical Engineering, University of Florida, Gainesville, FL 32611 USA, Phone:352-392-4727, Fax: 352-392-3235, Email: ren@che.ufl.edu; H.M. Ng, Bell Labs, Lucent Technologies, Murray Hill, NJ 07974 USA, Phone: 908-582-2072, Fax: 908-582-2043, Email: hmng@lucent.com; S. J. Pearton, Department of Material Science and Engineering, University of Florida, Gainesville, FL 32611 USA, Phone: 352-846-1086, Fax: 352-846-1182, Email: spear@mail.mse.ufl.edu; J. Han, Sandia National Labs., Albuquerque, NM 87185 USA, Phone: 505-284-4531, Fax:505-844-3211, Email: jhan@sandia.gov; Jen-Inn Chyi, Department of Electrical Engineering, National Central University, Chung-Li, Taiwan, 32054, Phone: 886-3-425-8241, Fax: 886-3-425-5830, E-mail: chyi@mbox.ee.ncu.edu.tw; T.D. Moustakas, Department of ECE Photonics, Boston University, Phone: 617-353-5431, Fax: 617-353-9844, Email: tdm@bu.edu; S.N.G. Chu, Bell Labs, Lucent Technologies, Murray Hill, NJ 07974 USA, Phone: 908-582-7318, Fax: 908-582-7660, Email: sngchu@lucent.com.

M2--IMPLEMENTATION OF THE 300mm SILICON ERA

(Electronics)

The transition to 300 mm wafers has been the most coordinated endeavor in the history of the integrated circuit (IC) industry. Despite this collective proactivity, however, implementation of 300 mm wafer IC device fabrication has been delayed far past the original projections. The symposium will address not only the issues relating to the delay but also has been timed to coincide with the anticipated implementation of 300 mm IC factories around the world. The purpose of the sessions is to document the state of 300 mm readiness across a broad front; highlight current technical areas anticipated to be of concern as 300 mm factories move to volume production for 130 nm design rule ICs; and identify the opportunities for process and materials research as 300 mm begins its inexorable rise as the industry's leading edge.

Papers are solicited, preferably based on actual 300 mm experience, in the following areas: 300 mm equipment, process, and materials performance, with the focus on wafer size and technology challenges; materials science and engineering of 300 mm silicon wafers; selection of 300 mm substrate type, especially as regards fab process considerations; anticipated issues in achieving productivity improvements in 300 mm silicon wafer manufacturing; technical experiences in the design, engineering, or use of 300 mm IC process equipment; 300 mm factory considerations, especially the impact on other technological areas (e.g., total automation, use of mini-environments, wafer tracking). Papers are also requested outlining strategic issues for 300 mm as the primary leading-edge substrate in the era beyond 100 nm IC technology.

Publication of a Proceedings Volume is planned to be available after the Meeting. Acceptance of a paper in this symposium obligates the authors to submit a typed camera-ready copy of the full manuscript at the meeting. Submission of an abstract indicates that the author: 1. has not previously published the research elsewhere; 2. will submit a manuscript at the Symposium in May of 2001 if a Proceedings Volume is planned (the contributors will be notified in February, 2001 whether a Proceedings Volume will be planned; and 3. will not publish the research in other venues prior to publication in the Abstracts Volume or Symposium Proceedings.

Abstracts, question, and inquiries can be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: R. Goodall, International Sematech, 2706 Montopolis Drive, Austin, TX 78741-6499 USA, Phone: (512) 356-7620, E-mail: randy.goodall@intl.sematech.org; H. Fusstetter, Wacker Siltronic AG, BU Large Wafer, P.O. Box 1140, D-84479 Burghausen, Germany, Phone: 49-8677-832598, Fax: 49-8677-831891, E-mail: hermann.fusstetter@wacker.de; T. Tsuya, Sumitomo Sitix Corporation, 2201 Oaza-kamioda, Kohoku-cho, Kishima- gun, Saga 849-05, Japan, Phone: 81-9-527-16536, Fax: 81-9-527-16536, E-mail: tsuya@sitix.co.jp; and H.R. Huff, SEMATECH, 2706 Montopolis Drive, Austin, TX 78741 USA, Phone: (512) 356-3334, Fax: (512) 356-7640, E-mail: howard.huff@sematech.org.

M3--SECOND INTERNATIONAL SYMPOSIUM ON ULSI PROCESS INTEGRATION II

(Electronics)

The second symposium on ULSI Process Integration will provide a forum for reviewing and discussing all aspects of process integration. In addition to full technologies and future trends, different front- and back-end integration issues will be addressed. The symposium will consist of both invited and contributed papers, with an emphasis on process integration aspects rather than on the development of individual process modules.

Contributed papers are solicited in the following areas: 1. Full Process Integration: Trends in Deep Sub-micron Technologies - 0.15um and beyond, Product development - Logic/microprocessors - Flash High Density - SRAM - High Performance - Embedded Logic, Process Margins and Structure Interactions. 2. Front-end-of-line Integration: Gate Dielectrics (ultra-thin, high k, Word Line Stacks (barriers), Well Engineering and Device Integration, Electrode/Dielectrics for Memory Capacitors and Transistor Gates, Photo Alignment (substrate, thermal cycles, schemes), Drain and Channel in Transistor Integration; 3. Process Integration and Defects - Defect Engineering - Metallic Contamination - Defect and Contamination Reduction through Process Integration, Process integration and Device Structure; 4. Novel Structures and Their CMOS Integration, Sub 100 nm devices and structures, Single Electron Structures, Novel Materials Concepts for Memory Devices, Novel Materials in CMOS Integration, New Device Concepts, Vertical Integration; and 5. Application Technologies, High Speed Technologies, SiGe in CMOS and BiCMOS, SOI Technologies, Low Voltage/Low Power, Mixed Analog/Digial, Non Volatile Memories (Flash, FeRAM).

Publication of a Proceedings Volume is planned before the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit fifteen (15) copies of a two-page abstract consisting of 500 words and figures to the regional organizer no later than August 15, 2000. Detailed instructions for the preparation of the ECS Extended Abstract (due on October 1, 2000) and of the full length manuscript will be sent to the lead author of the accepted papers. A typed camera ready copy of the full proceedings volume manuscript and a list of key words by October 15, 2000.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: C.L. Claeys, IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, Phone: 32-16-281328, Fax: 32-16-281510, E-mail: claeys@imec.be; F. Gonzales, Micron Technologies, M/S 306, 8000 South Federal Way, P.O. Box 6, Boise, ID 83707-0006 USA, Phone: (208) 368-3784, Fax: (208) 368-2548, E-mail: fgonzalez@micron.com; J. Murota, Research Institute of Electronic Communications, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan, Phone: 81-22-217-5548, Fax: 81-22 217 5548, E-mail: murota@riec.tohoku.ac.jp; and K. Saraswat, Electrical Engineering Department, Stanford University, Stanford, CA 94305-4027 USA, Fax: (650) 723-4659, E-mail: saraswat@cis.stanford.edu.

M4--STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XXXIV

(Electronics)

The thirty-fourth SOTAPOCS will address recent advances in compound semiconductor technologies. Original contributions are solicited on materials growth, characterization, processing, device fabrication, reliability, and other related topics. Papers on both fundamental studies and practical issues will be included. The following areas are of particular interest: 1. Advances in materials growth technologies; 2. Advances in processing technology including wet and dry etching, novel metallization, selective oxidation, dielectric deposition, ion implantation, diffraction grating formation, microcleaving etc.; 3. In situ and ex situ process characterization; 4. Wide bandgap material growth and processing; 5. Device passivation, encapsulation and packaging; 6. Device degradation mechanisms; 7. Characterization of materials and devices, including non-destructive evaluation; 8. Wafer-level testing and mapping,; 9. Novel device structures and processing; 10. Monolithic device integration; 11. High-speed III-V electronics technologies for wireless, automotive and microwave applications; and 12. Fundamental optical, electrical, and other physical properties.

The program will consist of both invited and contributed papers.

Publication of a Proceedings Volume is planned before the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and a list of key words by November 1, 2000. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: D.N. Buckley, Department of Physics, University of Limerick, Limerick, Ireland, Phone: 353-61-202902, Fax: 353-61-202423, E-mail: noel.buckley@UL.ie; S.N.G. Chu, Bell Laboratories, Lucent Technologies, Room 7C-221, 600 Mountain Avenue, Murray Hill, NJ 07974-0636 USA, Phone: (908) 582-7318, Fax: (908) 582-7660, E-mail: sngchu@bell-labs.com; A.G. Baca, Sandia National Laboratories, MS 0603, P.O. Box 5800, Albuquerque, NM 87185-0603 USA, Phone: (505) 844-7127, Fax: (505) 844-8985; Y. Mochizuki, Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan, Phone: 81-298-56-6122, Fax: 81-298-56-6137, E-mail: mochizuk@frl.cl.nec.co.jp; and J.P. Vilcot, IEMN DHS, UMR CNRS, 9929 Avenue Poincare, BP 69, 59652, Villeneuve D'Ascq Cedex, France, Phone: 33-20-197965, Fax: 33-20-197883, E-mail: vilcot@iemn.univ-lille1.fr.

M5--TENTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES

(Electronics)

This symposium covers novel and significant advances in SOI technologies. It will be of interest to materials and device scientists, as well as to process and applications oriented engineers. Theoretical and experimental contributions are solicited. Specific topics will include, but are not limited to: 1. Synthesis of SOI substrates: optimized preparation of UNIBOND, SIMOX, ITOX, WAFER BONDING, SOS, ZMR, FIPOS, and other recent structures and heterostructures; 2. Materials evaluation: wafer screening and non destructive techniques, basic electrical properties (lifetime, mobility, residual doping and impurities), defect identification, interface quality, properties of ultrathin films and buried oxides, tools for quality control; and 3. SOI MOSFETs: characterization, modeling and simulation of typical SOI effects (floating body, coupling, transients, self-heating), parameter extraction, reliability issues (hot carriers, irradiation, ESD, etc). (4) Devices and circuits: low power/voltage circuits, high speed CMOS and bipolar, memories, -processors, power and high/low temperature devices, sensors and MEMs, quantum and innovative devices, advanced processing and design.

Each session will be introduced by keynote speakers. Meeting Abstracts are due to the ECS Headquarters in October 1, 2000.

Publication of a Proceedings Volume is planned before the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words by November 1, 2000. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: S. Cristoloveanu (chair), LPCS-ENSERG, BP 257, 38016 Grenoble Cedes 1, France, Phone: 33-476-85-6040, Fax: 33-476-85-6070, E-mail: sorin@enserg.fr; P.L.F. Hemment, School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford, Surrey GU2 5XH, UK, Phone: 44-1483-25-9144, Fax: 44-1483-534139, E-mail: p.hemment@surrey.ac.uk; K. Izumi, Research Institute for Advanced Science and Technology, Osaka Prefecture University, 1-2, Gakuen-Cho, Sakai 599-8570, Japan, Phone: 81-722-54-9827, Fax: 81-722-54-9935, E-mail: izumi@riast.osakafu-u.ac.jp; G.K. Celler, Bell Laboratories-Lucent Technologies, Room 3L-402, 600 Mountain Avenue, Murray Hill, NJ 07974, USA, Phone: (908) 582-2861, Fax: (908) 582-2950, E-mail: gkc@lucent.com; F. Assaderaghi, IBM Semiconductor Research and Development Center, 1580 Route 52, Hopewell Junction, NY 12533, USA, Phone: (914) 892-3969, Fax: (914) 892-2568, E-mail: fari@us.ibm.com; Y.-W. Kim, CPU Technology 1 Team, System LSI Business, Samsung Electronics Corporation, 24 Nongseo-Ri, Kiheung-Eup, Yongin- City, Kyunggi-Do, Korea, Phone: 82-2-760-6590, Fax: 82-331-209-4399, E-mail: youngwug@samsung.co.kr.

N1--ELECTRONICS/DIELECTRIC SCIENCE AND TECHNOLOGY JOINT GENERAL SESSION

(Electronics/Dielectric Science and Technology)

Original papers are solicited on all aspects of electronic materials, devices, and processing technologies not covered by specialized topical symposia at this Meeting. The sessions will be organized depending on the content of the Meeting Abstracts. One or more of the sessions may be organized as a poster session. Contributors should specify their preference as to poster or oral presentation, and all efforts will be made to accommodate their requests.

 

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Session Organizers: M.J. Deen, Department of Electrical and Computer Engineering, CRL Room 220, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4K1, Phone: (905) 525-9140, ext. 27137, Fax: (905) 523-4407, E-mail: jamal@ece.eng.mcmaster.ca; R.K. Ulrich, 3202 Bell Center, University of Arkansas, Fayetteville AR 72701 USA, Phone: (501) 575-5645, Fax: (501) 575-7926, E-mail: rku@engr.uark.edu; C.L. Claeys, IMEC V Z W, Kapeldreef 75, B-3001 Leuven, Belgium, Phone: 32-16-281328, Fax: 32-16-281214, E-mail: Cor.claeys@imec.be; and K.B. Sundaram, Department of Electrical Engineering, University of Central Florida, Orlando, FL 32816 USA, Phone: (407) 823-5326, Fax: (407) 823-5835, E-mail: kbs@ece.engr.ucf.edu.

N2--RAPID THERMAL AND OTHER SHORT-TIME PROCESSING TECHNOLOGIES II

(Electronics/Dielectric Science and Technology/High Temperature Materials)

This symposium will cover the latest developments in Rapid Thermal Processing and other short-time processing technologies with emphasis on CMOS gate stack, source/drain and channel engineering. As such in addition to conventional RTP technologies such as RTA, RTO and RTCVD, and related equipment and modelling issues, we welcome applications of techniques such as UV or laser-assisted processing in annealing, doping, etc., and thin-film deposition techniques such as short-time UHV-CVD, MBE, remote plasma and atomic layer CVD, sputtering, etc., for the synthesis of ultra-thin films.

Researchers and technologists are encouraged to submit their abstracts on applications in the areas of: formation and/or deposition of ultra-thin gate dielectrics (including novel higher dielectric constant materials) and their gate electrodes; doping technologies to form ultra-shallow junctions; formation of low-resistivity contacts to such junctions; advanced channel engineering approaches including Si-Ge channels and ultrathin SOI technologies; equipment issues.

Papers outside mainstream CMOS engineering (or integration), such as III-V compound semiconductors, power devices, flat panel displays, compound, glass reflow, and non-semiconductor thin films are also welcome, provided they represent breakthroughs in applications of short-time processing.

Finally, new developments in RTP and other short-time processing equipment to improve throughput, uniformity, in-situ monitoring, process control and modelling are of special interest to this symposium.

Publication of a Proceedings Volume is planned to be available after the Meeting. Acceptance of a paper in this symposium obligates the authors to submit a typed camera-ready copy of the full manuscript at the Meeting.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Session Organizers: D.-L. Kwong, University of Texas at Austin, MER 2.60A, Mailcode R9950, Austin, TX 78712-1100 USA, Phone: (512) 471-5922, Fax (512) 471-4345, E-mail: dlkwong@mail.utexas.edu; K. Reid, Motorola, MD K-10, 3501 Ed Bluestein Boulevard, Austin, TX 78721, USA, Phone: (512) 933-5371, Fax: (512)-933-2691, Email: rzgl40@email.sps.mot.com; M.C. Ozturk, North Carolina State University, Department of Electrical and Computer Engineering, Centennial Campus, 1010 Main Campus Drive, EGRC Building, Room 339, Campus Box 7920, Raleigh, NC 27695-7920 USA, Phone: (919) 515-5245, Fax (919) 515-5055, E-mail: mco@eos.ncsu.edu; P.J. Timans, STEAG RTP Systems, 4425 Fortran Drive, San Jose, CA 95134-2300 USA, Phone: (408) 935-2235, Fax (408) 935-2775, E-mail: P.Timans@steag-rtp-us.com; and F. Roozeboom, Philips Research Laboratories, (WA 14), Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands, Phone: 31-40-2742767, Fax: 31-40-2743352, E-mail: Fred.Roozeboom@philips.com.

O1--PHOTOVOLTAICS FOR THE 21ST CENTURY

(Energy Technology/NREL)

Today's photovoltaic technologies for terrestrial applications are based on various forms of crystalline silicon. These technologies, the result of innovative, breakthrough research conducted 30 to 40 years ago, have enabled dozens of companies throughout the world to establish a billion-dollar industry marketing primarily to non-grid-connected applications. Marketing in grid-connected applications, however, requires, substantial cost reductions, the Holy Grail of all PV R&D efforts. Thin film technologies, considered the next generation to crystalline silicon technologies, came into being some 25 years ago or more as another consequence of breakthrough, innovative R&D. These technologies, based on non-silicon or amorphous silicon materials, are today's focus on tens of millions of dollars annually for their development.

There is no reason to believe that photovoltaic innovation has gone as far as it can go or that new viable PV technologies don't exist beyond the horizon of our present knowledge. Fundamental and exploratory research are needed to see what can be next. Further, breakthroughs can happen for silicon-based technologies, the thin film technologies considered successors to silicon, as well as in the identification of totally new PV concepts. Interestingly, the PV patent literature is replete with innovative non-conventional PV technologies that weren't developed because supporting or enabling technologies did not exist. The problems then that prevented the demonstration of the concepts can perhaps be overcome today.

This symposium will focus on non-conventional technologies that are not being used in the PV industry today but could be used commonly in the 21st century. Contributed publications of both fundamental and applied nature leading to maximum, cost-effective, utilization of solar energy for electric power generation are solicited. Some of the suggested general areas of interest are: 1. New Devices and structures using thin film materials such as thin film silicon, microcrystalline/amorphous silicon, nanocrystalline materials, biomimetic concepts, organic materials, photoelectrochemical cells, dyesensitized materials, or any combination of these materials and devices; 2. Materials and concepts suitable for very high efficiency epitaxial solar cells, including multijunction III-V materials and devices, lift- off techniques, solid-state epitaxy, or other concepts for incorporating single crystal thin film materials onto low-cost substrates; 3. Material synthesis and processing concepts; 4. Device modeling; 5. Efficient and low-cost manufacturing techniques; 6. Manufacturing processes and controls with special emphasis on recycling of materials and minimal waste; 7. Materials and device characterization including interface and contact studies; 8. Hybrid concepts such as PV- generated hydrogen, PV-powered electrochromics, or PV-storage combinations; and 9. Environmental issues such as recycling.

Keynotes lectures will be presented by invited speakers.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters and Symposium Organizers: V.K. Kapur, International Solar Energy Technology (ISET), 8635 Aviation Boulevard, Inglewood, CA 90301 USA, Phone: (310) 216-4427, Fax: (310) 216-2908, E-mail: vkkapur@earthlink.net; R.D. McConnell, National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401 USA, Phone: (303) 384-6419, Fax: (303) 384- 6481, E-mail: robert_mcconnell@nrel.gov; D. Carlson, Solarex, 826 Newtown-Yardley Road, Newtown, PA 18940 USA, Phone: (215) 860-0902, Fax (215) 860-2986, E-mail: dcarlson@solarex.com; G.P. Ceasar, National Institute of Standards and Technologies, A415 Administration Building, Gaithersburg, MD 20899 USA, Phone: (301) 975-5069, Fax: (301) 548-1087, E-mail: gerald.ceasar@nist.gov; A. Rohatgi, Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Drive, NW, Atlanta, GA 30332-0250 USA, Phone: (404) 894-7692, Fax: (404) 894-5934, E-mail: ajeet.rohatgi@ece.gatech.edu; and J. Smith, U.S. Department of Energy, 19901 Germantown Road, Germantown, MD 20874 USA, Phone: (301) 903-3426, Fax: (301) 903-9513, E-mail: jerry.smith@science.doe.gov.

P1--METAL AND SEMICONDUCTOR NANOCLUSTERS

(Energy Technology/Fullerenes)

Nanocluster science and technology is emerging as an important research area of with implications in several technologies such as sensors, photovoltaics, photocatalysis, electrocatalysis, display devices, batteries, super-capacitors and solar energy applications. This symposium will focus on the latest advancements in the preparation, characterization and properties of metal and semiconductor nanoclusters and nanostructured films. Papers are solicited from all aspects of the fundamental science and novel applications in the areas of: Semiconductor and metal nanoparticles and metal/semiconductor nanocomposites, size quantization effects, surface morphological effects including Electron Microscopy, AFM and STM, photodynamics and Transient Spectroscopy, photoinduced charge separation and interfacial charge transfer, dye sensitization of semiconductor nanoclusters, photoelectrochemistry and photocatalysis. Nanostructured electrocatalysts for fuel cell reactions, metal/polymer and metal/semiconductor nano-composites and membranes, carbon nanofibers and tubes, nanostructured sensors, photochromic and electrochromic displays, environmental and Solar Energy Applications.

 

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: S. Mukerjee, Department of Chemistry, Northeastern University, 01 Hurtig Hall, Boston, MA 02115 USA, Phone: (617) 373-2382, Fax: (617) 373-3795, E-mail: Smukerje@lynx.neu.edu; P.V. Kamat, Radiation Laboratory, University of Notre Dame, Notre Dame, IN 46556-0579 USA, Phone: (219) 631-8055, Fax: 219) 631-8068, E-mail: pkamat@nd.edu; and G. Hartland, Department of Chemistry, University of Notre Dame, Notre Dame, IN 46556-0579 USA, Phone: (219) 631-9320, Fax: (219) 631-6652, E-mail: hartland.1@nd.edu.

Q--FULLERENES, NANOTUBES AND CARBON NANOCLUSTERS

(Fullerenes)

Papers are invited for this symposium in the areas listed below. Authors should clearly state the appropriate symposium number, Q1 through Q9, on the Meeting Abstract. The organizers of each symposium will determine the suitability of the papers for inclusion in the oral or poster presentation of the program.

Publication of a Proceedings Volume planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office. The Proceedings Volumes will include sections as the topics listed below. Specific details about the format for contributed papers for the Proceedings Volume can be obtained from the Session Organizers of each symposium.

Questions and information may be obtained from: K.M. Kadish, University of Houston, Department of Chemistry, Houston, TX 77204-5641 USA, Phone: (713) 743-2740; Fax: (713) 743-2745; E-mail: kkadish@uh.edu; and P.V. Kamat, Notre Dame Radiation Laboratory, Notre Dame, IN 46556-0579 USA, Phone:(219) 631-5411, Fax: (219) 631-8068, E-mail: pkamat@nd.edu. Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Organizers of the corresponding symposium listed below:

Q1--Fullerenes in the Undergraduate Curriculum

(See main heading above)

This symposium will focus on methods for using the novelty and appeal of fullerenes to enhance undergraduate chemical education. The main focus will be curricular innovations that bring fullerenes into laboratory courses taught to chemistry majors.

 

Papers are welcome describing implemented or planned courses that involve any of the following topics: preparation, separation, purification, spectroscopy, characterization, or computer modeling of fullerenes and their derivatives. These projects may be taught as free-standing modules or instead form parts of conventional lab courses in organic, analytical, instrumental, or physical chemistry. Participants will be expected to share new ideas and report on successful approaches.

Organizer: R.B. Weisman, MS-60, Department of Chemistry, Rice University, 6100 Main Street, Houston, TX 77005 USA, Phone: (713) 527-8101, ext. 3709, Fax: (713)285-5155, E-mail: weisman@rice.edu.

Q2--Electrochemistry and ESR

(See main heading above)

Papers are invited in the following areas of Fullerenes and Carbon Nanotubes: Electrochemistry, ESR, electron transfer chemistry, spectroelectrochemistry, photoelectrochemistry, catalysis, sensor studies and applications. of fullerenes and related compounds (carbon nanotubes, organofullerenes, electroactive fullerenes, supramolecular fullerenes, organometallic fullerenes, endohedral fullerenes, fullerene films and composites).

Organizers.: F. D'Souza, Department of Chemistry, Wichita State University, 1845 Fairmount, Wichita, KS 67260-0051 USA, Phone: (316) 978-3120, Fax: (316) 978-3431, E-mail: dsouza@wsuhub.uc.twsu.edu, and S. Fukuzumi, Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan, Phone: 81-6-6879-7368, Fax: 81-6-6879-7370, E-mail: fukuzumi@chem.eng.osaka-u.ac.jp.

Q3--Photoinduced Processes

(See main heading above)

The focus of this symposium is to discuss the photochemical and photophysical aspects of fullerenes, functionalized fullerenes, and photoactive donor-acceptor type assemblies. Topics of this symposium range from excited transformations to light energy harvesting aspects of fullerene based materials.

 

Organizers: D.M. Guldi, Radiation Laboratory, University of Notre Dame, Notre Dame, IN 46556 USA Phone: (219) 631-7441, Fax: (219) 631-8068, E-mail: guldi@hertz.rad.nd.edu; and K.P. Dinse, Physical Chemistry III, Tu Darmstadt, Petefrenstrasse 20, D-64287 Darmstadt, Germany, Phone: 49-6151-162607, Fax: 49-6151-164347, E-mail: dinse@pc07.pc.chemie.tu-darmstadt.de.

Q4--Functionalized Fullerenes

(See main heading above)

The purpose of this symposium is to provide a forum for the presentation of original research concerned with all aspects of chemical functionalization of the fullerenes. This rapidly growing area includes nucleophilic and radical additions, cycloadditions, hydrogenations, transition metal complex formation, oxidations and reactions with electrophiles. Also included are contributions on multiple additions to fullerenes, ring opening reactions, synthesis of heterofullerenes as well as studies toward the total synthesis of fullerenes. The mentioned topics may be considered as representative examples and should not be regarded as restrictive.

Organizers: M. Maggini, Department of Organic Chemistry, University of Padova Via Marzolo, 1 35131 Padova, Italy; Phone: 39-049-8275662, Fax: 39-049-8275239, E-mail: maggini@chor.unipd.it; and N. Martin, Department of Organic Chemistry, Faculty of Chemistry, Complutense University E-28040 Madrid, Spain, Phone: 34-91-394-4227, Fax: 34-91-394-4103, E-mail: nazmar@eucmax.sim.ucm.es.

Q5--Nanotubes and Nanostructured Materials

(See main heading above)

The symposium will addresses the research on fullerene nanotubes, nanoclusters and related materials as building blocks for novel nanoscale devices. Topics include new techniques for fabrication and study of nanoscale materials, morphology, characterization, chemistry and physics of nanoscale materials.

Organizers: S. Subramoney, E.I. DuPont de Nemours & Company, DuPont Experimental Station, Building 228, Room 114, Wilmington, DE 19880-0228 USA, Phone: (302) 695-2992, Fax: (302) 695-1351, E-mail: subrams@esvax.dnet.dupont.com; and Z.F. Ren, Department of Physics, Boston College, Chestnut Hill, MA 02167 USA, Phone: (617) 552-3575, Fax: (617) 552-8478, E-mail: zren@bc.edu.

Q6--Energetics and Structure of Fullerenes

(See main heading above)

Original research papers that address both theoretical and experimental aspects of fullerenes and carbon nanoclusters are being solicited for this symposium. The topics include quantum chemistry, topology, statistical mechanics, molecular dynamics, thermodynamics, kinetics, thermal properties, solubility, mechanism, ionization, collisons, electronic properties and catalysis.

Organizers: E. Osawa, Knowledge-Based Information Engineering, Toyohashi, University of Technology, Tempaku-cho, Toyohashi 441, Japan, Phone: 81-532-44-6881, Fax: 81-532- 48-5588, E-mail: osawa@cochem.tutkie.tut.ac.jp; Z. Slanina, Knowledge-Based Information Engineering, Toyohashi University of Technology, Tempaku-cho, Toyohashi 441, Japan, Phone: 81- 532-44-6880, Fax: 81-532-48-5588, E-mail: slanina@cochem2.tutkie.tut.ac.jp; O.V. Boltalina, Chemistry Department, Moscow State University, 119899, Moscow, Russia, Phone: 095-939-53-73, Fax: 095-939-12-40, E-mail: ovb@capital.ru; and G. Gigli, Departmento de Chimica, Universita di Roma "La Sapienza", 00185 Roma, Italy, Phone: 39-6-49913373, Fax: 39-6-49913951, E-mail: gigli@caspur.it.

Q7--Endofullerenes and Carbon Nanocapsules

(See main heading above)

Original papers are solicited on all aspects of endofullerenes such as endohedral metallofullerenes and endohedral rare-gas and other types of fullerenes. Papers on carbon nanocapsules and metal encapsulates are also welcome. The topics of this symposium include synthesis, characterization and properties of different types of endofullerenes and carbon nanocapsules.

Organizers: H. Shinohara, Nagoya University, Department of Chemistry, Nagoya 464-8602, Japan, Phone: 81-52-789-2482, Fax: 81-52-789-2962, E-mail: nori@chem2.chem.nagoya-u.ac.jp; and T. Akasaka, Graduate School of Science and Technology, Niigata University, Niigata 950-2181, Japan, Phone: 81-25-262-7390, Fax: 81-25-262-7390, E-mail: akasaka@gs.niigata-u.ac.jp.

Q8--Solid State Physics

(See main heading above)

The symposium focuses on the topic of solid state physics, structure and properties of fullerene compounds. The topics include chemical reactivity, superconductivity, surface studies, thin films, diffraction studies, thermal and electronic properties.

 

Organizers: Y. Iwasa, JAIST, Tatsunokuchi, Ishikawa 923-1292, Japan, Phone: 81-761-51-1531, Fax: 81-761-51-1149, E-mail: iwasa@jaist.ac.jp; K. Prassides, School of Chemistry, Physics and Environmental Science, University of Sussex, Falmer, Brighton, BN1 9QJ, UK, Phone: 44-1273-678-454, Fax: 44-1273-677-196, E-mail: k.prassides@sussex.ac.uk; and O. Gunnarsson, Max-Planck Institut, Postfach 800 665, Stuttgart D-70506, Germany, Phone: 49-711-6891669, Fax: 49-711-6891010, E-mail: gunnar@and.mpi-stuttgart.mpg.de.

Q9--Biochemical and Pharmaceutical Aspects of Fullerene Materials

(See main heading above)

Original papers are solicited on all aspects of pharmaceutical, biological, biotechnology, and medical applications of fullerenes and functionalized fullerenes.

Organizer: S.R. Wilson, Department of Chemistry, New York University, 100 Washington Square East, New York, NY 10003-6688 USA, Phone: (212) 998-8461, Fax: (212) 260-7905, E-mail: steve.wilson@nyu.edu.

R1--HIGH TEMPERATURE CORROSION AND MATERIALS CHEMISTRY III

(High Temperature Materials/Corrosion)

This symposium will focus on the mechanistic aspects of high temperature oxidation, high temperature corrosion, and other chemical reactions involving inorganic materials at high temperatures. Both theoretical and experimental papers are encouraged. Specifically, contributions in the following areas are solicited: 1. development of theoretical models for predicting thermodynamic and kinetic aspects of high temperature reactions, as well as experimental verification of such models; 2. fundamental mechanisms of oxidation and corrosion, including studies in complex environments; 3. thermodynamic and kinetic studies of vaporization of inorganic materials; 4. response of protective coatings to high temperatures; 5. thermodynamic property measurements of inorganic materials; and 6. fundamental studies of solid state interdiffusion and reactions.

This symposium will include both invited and contributed papers.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: E.J. Opila, NASA Glenn Research Center, MS 106-1, 21000 Brookpark Road, Cleveland, OH 44135 USA, Phone: (216) 433-8904, Fax: (216) 433-5544, E-mail: opila@grc.nasa.gov; M.J. McNallan, University of Illinois, Room 3083, Engineering Research Facility, M/S 246, 842 West Taylor Street, Chicago, IL 60607 USA, Phone: (312) 996-2436, Fax: (312) 996-2426, E-mail: mcnallan@uic.edu; D.A. Shores, University of Minnesota, Corrosion Research Center, 221 Church Street, S.E., Minneapolis, MN 55455 USA, Phone: (612) 625-0014, Fax: (612) 626-7246, E-mail: dshores@maroon.tc.umn.edu; and D.A. Shifler, Carderock Division, Code 613, Marine Corrosion Branch, Naval Surface Warfare Center, 9500 MacArthur Boulevard West Bethesda, MD 20817-5700 USA, Phone: (301) 227-5128, Fax: (301) 227-5548, E-mail: shiflerDA@nswccd.navy.mil.

S1--FUNDAMENTAL GAS-PHASE AND SURFACE CHEMISTRY OF VAPOR-PHASE DEPOSITION II

(High Temperature Materials/Dielectric Science and Technology)

This Symposium will address the state of the art in vapor-phase synthesis and processing of materials with emphasis on gas-phase and surface chemistry and its effects on growth/etching rates and material properties. Materials of interest include semiconductors (elemental and compound), oxides, diamond films, metals, ceramics, magnetic semiconductors, ferroelectrics, aerosols, and nanoparticles.

Processes of interest include (but are not limited to): Chemical vapor deposition (thermal, rapid thermal, plasma-assisted, photon-assisted, ion-assisted, particle-assisted etc.), vapor-phase etching, molecular- and chemical-beam epitaxy, and aerosol synthesis. In particular, papers are sought in the following areas: kinetics of gas-phase and surface reactions underlying the vapor-phase processing of materials, including fundamental measurements of kinetic constants as well as in-situ probing during film growth/etching and particle synthesis; surface and interfacial chemistry during heteroepitaxy and selective epitaxy; new precursors and growth/etching chemistries; quantum-chemistry calculations for predicting thermochemistry, mechanisms, and rate parameters; in-situ monitoring and control of materials composition, morphology, electrical, and optical properties; fundamentals and in situ monitoring of gas-to-particle conversion; particle formation issues during CVD; models describing the kinetics and transport phenomena that occur during vapor-phase materials processing, with special emphasis on hierarchical models leading from the molecular to the mesoscopic level (properties) and from the mesoscopic to the macroscopic level (processes).

The Symposium will consist of both invited and contributed oral presentations as well as a poster session.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and the Symposium Organizers: M.T. Swihart, Department of Chemical Engineering, 303 Furnas Hall, State University of New York, Buffalo, NY 14260 USA, Phone: (716) 645-2911 Ext. 2205, Fax: (716) 645-3822, E-mail: swihart@eng.buffalo.edu; M. D. Allendorf, Sandia National Laboratories, Livermore, CA 94551 USA, Phone: (925) 294-2895, Fax: (925) 294-2276, E-mail: mdallen@sandia.gov; M. Meyyappan, NASA Ames Research Center, MS 229-3, Moffett Field, CA 94035 USA, Phone: (650) 604-2616, Fax: (650) 604-5244, E-mail: meyya@orbit.arc.nasa.gov; and S. Seal, University of Central Florida, Mechanical, Materials and Aerospace Engineering, P.O. Box 162450, Orlando, FL 32816-2450 USA, Phone: (407) 823-5277, Fax: (407) 823-0208, E-mail: sseal@pegasus.cc.ucf.edu.

T1--INDUSTRIAL MEMBRANE PROCESSES

(Industrial Electrolysis and Electrochemical Engineering)

This session will focus on current research, development, and applications of membrane separators and membrane materials to industrial electrochemical processes and systems. Papers that describe methods for synthesis or characterization of membrane materials, transport properties, and other physicochemical phenomena associated with these membrane materials are encouraged. Papers are also solicited in areas focused on the development of membranes that provide unique industrial benefits and the application of membrane materials to existing or new industrial-scale processes. Papers may contain both theoretical and experimental work, and papers dealing with either area will be considered. Contributed papers will be programmed in some related order, depending on the titles and content of the abstracts.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Session Organizer: G. Pillay, Los Alamos National Laboratory, Mailstop A103, Los Alamos, NM 87545 USA. Phone: (505) 667-5461; Fax: (505) 667-0365; E-mail: gpillay@lanl.gov.

T2--NOVEL ELECTRODE MATERIALS FOR INDUSTRIAL ELECTROCHEMICAL PROCESSES

(Industrial Electrolysis and Electrochemical Engineering)

This symposium will provide a forum to discuss recent progress that has been made in the synthesis and development of novel electrode materials being used in industrial electrochemical processes at the pilot or production scale. Specifically, discussion of electrocatalysts, coatings, and electrode designs are sought. Of particular interest are new electrode materials, electrodes prepared by non-traditional processes, and electrodes being used in non-traditional industrial electrolytic processes. Papers are solicited on the uses of novel electrode materials in industrial applications other than batteries, and fuel cells designed primarily for power generation purposes.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizer: P. Tatapudi, (IEEE) DuPont Central Research and Development, E356/261, Wilmington, DE 19880-0304, USA, Phone: (302) 695-9640, Fax: (302) 695-3501, E-mail: pallav.tatapudi@usa.dupont.com and J.M. Fenton, Department of Chemical Engineering, U-222, Room 208, University of Connecticut, Storrs, CT 06269 USA, Phone: (860) 486-2490, Fax: (860) 486-2959, E-mail: jmfent@engr.uconn.edu.

T3--INDUSTRIAL ELECTROLYSIS AND ELECTROCHEMICAL ENGINEERING GENERAL SESSION

(Industrial Electrolysis and Electrochemical Engineering)

Papers are solicited in areas of industrial electrochemical engineering that are not covered by other symposia at this Meeting. Of particular interest are papers concerning: design, operation, testing, and/or modeling of industrial electrochemical systems; electrochemical waste treatment technologies; methods for electrosynthesis; development of microelectrochemical systems; electrolytic recovery of process materials; and electrocatalysts. Contributed papers will be programmed in some related order, depending on the titles and content of the abstracts.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Session Organizer: G. Pillay, Los Alamos National Laboratory, Mailstop A103, Los Alamos, NM 87545 USA Phone: (505) 667-5461; Fax: (505) 667-0365; E-mail: gpillay@lanl.gov.

U1--SELECTION AND DESIGN OF CONSTRUCTION MATERIALS

(Industrial Electrolysis and Electrochemical Engineering/Corrosion)

This symposium will provide a forum for basic and applied research concerning electrochemical aspects associated with materials of construction. Papers are invited on a broad range of topics and applications including: corrosion of carbon steel, corrosion and/or corrosion prevention for structures such as tanks, buildings, and pipelines, corrosion of reinforcing steel in concrete, andelectrochemical characterization of cement and concrete. Papers are also invited on recent research on development of electrochemical techniques for characterizing materials of construction, on developing mathematical models for understanding or predicting the effectiveness of corrosion-prevention strategies, and development of methods for lifetime prediction of structures.

Abstracts, questions, and suggestions can be sent electronically to ECS Headquarters and the Symposium Organizers: M.E. Orazem, Department of Chemical Engineering, University of Florida, P.O. Box 116005, Gainesville, FL 32611 USA, Phone: (352) 392-6207, Fax: (352) 392-6207, E-mail: meo@electro.che.ufl.edu; P.M. Natishan, Naval Research Laboratory, Code 6134, Washington, DC 20375 USA, Phone: (202) 767-9255, Fax: (202) 404-7297, E-mail: natishan@nrl.navy.mil; and C.W. Walton, FMC Corporation, Active Oxidants Division, P.O. Box 8, Princeton, NJ 08543-0008 USA, Phone: (609) 951-3189, Fax: (609) 951-3836, E-mail: clifford_walton@fmc.com.

V1--REACTIVE INTERMEDIATES IN ORGANIC AND BIOLOGICAL ELECTROCHEMISTRY IN HONOR OF THE LATE PROFESSOR EBERHART STECKHAN

(Organic and Biological Electrochemistry)

Organic and biological reactions involve reactive intermediates such as cations, cation radicals, free radicals, anion radicals, and anions. Understanding the nature of these reactive intermediates and controlling their reactions are important from the viewpoints of both reaction mechanisms and syntheses. Electrochemical methods are one of the most straightforward ways to generate these reactive intermediates and to control their reactivities. In this symposium, any aspects of reactive intermediates in organic and biological electrochemistry will be presented. Original contributions are solicited in all areas, including theory, basic concepts and principles, new methods and reactions, reaction mechanisms, synthesis, analytical methods, and electrochemistry of biological systems.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: J. Yoshida, Graduate School of Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto, 606-8501, Japan, Phone: 81-75-753-5651, Fax: 81-75-753-5911, E-mail: yoshida@sbchem.kyoto-u.ac.jp; D.G. Peters, Department of Chemistry, Indiana University, 800 East Kirkwood Avenue, Bloomington, IN 47405-7102 USA, Phone: (812) 855-9671, Fax: (812) 855-8300, E-mail: peters@indiana.edu; E. Steckhan, Kekule Institute of Organic Chemistry and Biochemistry, University of Bonn, Gerhard-Domagk-Str. 1, D-53121 Bonn, Germany, Phone: 49-228-732653, Fax: 49-228-735683, E-mail: steckhan@uni-bonn.de; and M.S. Workentin, Department of Chemistry, The University of Western Ontario, London, Ontario, Canada N6A 5B7, Phone: (519) 661-2111, Ext. 86319, Fax: (519) 661-3022, E-mail: mworkent@julian.uwo.ca.

V2--ORGANIC AND BIOLOGICAL ELECTROCHEMISTRY GENERAL SESSION

(Organic and Biological Electrochemistry)

Papers concerning any aspect of organic and biological electrochemistry not covered by topic areas of other specialized symposia at this meeting are welcome. Contributed papers will be programmed in some related order depending on the titles and contents of the Meeting Abstracts.

Abstracts, suggestions, and inquiries should be sent to the ECS Headquarters Office and to the Session organizer: D.G. Peters, Department of Chemistry, Indiana University, Bloomington, IN 47405, USA, Phone: (812) 855-9671, Fax: (812) 855-8300, E-mail: peters@indiana.edu.

W1--ELECTROORGANIC CHEMISTRY AND IN-SITU OBSERVATION OF TRACE REACTANTS

(Organic and Biological Electrochemistry/Battery)

Papers are solicited on both fundamental and applied aspects of electrochemistry involving organic substances. Electrochemical reactions of organic species are not only key steps of electroorganic synthesis but they also can affect the performance of a variety of electrochemical systems: SEI formation of rechargeable lithium batteries, self discharge of primary and secondary batteries, corrosion protection, metal deposition, and others. Trace amounts of organic reactants and/or reaction products can decisively influence the total system. Electroanalytical methods are utilized to clarify these issues and to enhance the total performance of many practical systems. This symposium will focus on the electrochemical reactions and electroanalytical chemistry of organic species that play important roles influencing the total performance of the systems.

Furthermore, this symposium will also cover recent developments in electroanalytical techniques for detection and identification of organic species and electrogenerated intermediates. Emphasis will be placed on the combination of electrochemical methods with other techniques such as ESR, FT-IR, surface enhanced Raman spectroscopy, electrochemical NMR spectroscopy, STM, quartz crystal microbalance, and stopped flow. Specific areas to be covered include but are not limited to: 1. in situ and ex situ analysis of electrode surfaces and trace components in organic electrolytes; 2. Stability and potential windows of organic electrolyte solutions; 3. Solvent reactions in batteries; 4. SEI formation on the anode and cathode in lithium batteries; 5. Stability of organic electrolyte solutions in electrolyzers and batteries; and 6. adsorption of organic species.

Abstracts, suggestions, and inquires should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: Z. Ogumi, Department of Energy and Hydrocarbon Chemistry, Kyoto University, Yoshida, Sakyo-ku, Kyoto 606-8501 Japan, Phone: 81-75-753-5522, Fax: 81-75-753-5889, E-mail: ogumi@scl.kyoto-u.ac.jp; B. Scrosati, Universita "La Sapienza", Piazzaale Aldo Moro, 5-00185 Rome Italy, Phone: 39-6-4462866, Fax: 39-6-491769, E-mail: scrosati@axrma.uniroma2.it; T. Fuchigami, Department of Electronic Chemistry, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8502, Phone: 81-45-924-5406, Fax: 81-45-924-5489, E-mail: fuchi@echem.titech.ac.jp; and D.H. Evans, Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716 USA, Phone: (302) 831-6770, Fax: (302) 831-6335, E-mail: dhevans@udel.edu.

X1--BIOELECTROANALYTICAL CHEMISTRY

(Organic and Biological Electrochemistry/Sensor/Physical Electrochemistry)

In the past two decades, an immense progress has been achieved in integrating biology and electrochemistry. Several new fields have emerged from these efforts which began to contribute to progress in scientific research as well as in many practical areas in major ways. The aim of this symposium is to integrate one of these fields, Bioelectroanalytical Chemistry, into the agenda of ECS more than it has been the case so far.

This symposium will cover all aspects of electrochemical approaches to measurements in biological preparations. The following focus areas are planned: 1. Theory and practice of sensors and sensing schemes based on electrochemical principles for biological measurements; and 2. Experimental studies that use such sensors and sensing schemes both in vitro and in vivo to answer significant biomedical hypotheses.

Papers will be solicited in the following specific areas: 1. Electrochemical sensors and sensing schemes developed for measuring /monitoring biologically significant molecules in biological preparations. The target molecules include cathecolamines, insulin, nitric oxide and other signaling molecules, and drug molecules for cancer and other diseases. The approaches include simple microelectrodes, modified electrodes, gas sensors, and more complex electrochemical schemes; 2. Bioelectroanalytical studies in vivo; 3. Bioelectroanalytical studies in tissue preparations; 4. Bioelectroanalytical studies in cell populations; and 5. Bioelectroanalytical studies at the single cell level.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office, and to the Symposium Organizers: M. Gratzl, Case Western Reserve University, Department of Biomedical Engineering, Cleveland, OH 44106, USA. Phone: (216) 368-6589. Fax: (216) 368-4969, E-mail: mxg13@po.cwru.edu; R.M. Crooks, Department of Chemistry, Texas A&M University, P.O. Box 30012, College Station, TX 77842 USA, Phone: (409) 845-5629, Fax: (409) 845-1399, E-mail: crooks@tamu.edu; P. Vanysek, Department of Chemistry, Northern Illinois University, Dekalb, IL 60115 USA, Phone: (815) 753-6876, Fax: (815) 753-4802, E-mail: pvanysek@niu.edu; and S.R. Mikkelsen, University of Waterloo, Department of Chemistry, Waterloo, Ontario, Canada N2L 3G1, Phone: (519) 888-4567 ext. 6871, E-mail: mikkels@sciborg.uwaterloo.ca.

Y1--INORGANIC TEMPLATES AS DESIGN ELEMENTS IN NANOCOMPOSITES AT ELECTRODE SURFACES

(Physical Electrochemistry)

This symposium will focus on use of inorganic materials to template electrode surfaces. The inorganic materials may be used to create layered domains, to create mesoporous surfaces of controlled diameter, to control charge and/or charge distribution at electrode surfaces. Some typical examples (but not limited to these) are clays, organoclays, zeolites, sol gels, layered double hydroxides, novel biological/inorganic matrices. Electrode arrays that reduce to nanometer scales are also considered. Materials falling into this category are semiconductor and metal depositions within the nanometer scale. The common theme is the use of large repeating structural elements to control access. Articles to be accepted include those detailing methods for obtaining said structures and those relating to performance, theory, and application of these materials. Articles and abstracts are due at the time of the meeting and a proceedings volume will be published after the meeting. The proceedings volume is intended to serve as a benchmark for understanding of transport phenomena in well designed/understood porous materials at electrode surfaces.

Abstracts, suggestions, or question should be sent electronically to ECS Headquarters and to the Symposium Organizers: A. Fitch, Department of Chemistry, Loyola University, 6525 N. Sheridan Road, Chicago, IL 60626-5386 USA, Phone: (773) 508-3119, Fax: (773) 508-3086, E-mail: afitch@luc.edu; and M.M. Collinson, Department of Chemistry, Kansas State University, Manhattan, KS 66506-3701 USA, Phone: (785) 532-1468, Fax: (785) 532-6666, E-mail: mmc@ksu.edu.

Y2--SYNCHROTRON RADIATION STUDIES OF ELECTROCHEMICAL SYSTEMS

(Physical Electrochemistry/Corrosion)

Application of synchrotron based spectroscopic techniques for in situ characterization of an electrochemical interface has undergone significant evolution in the last few years. This is manifested by an increase in the number of users and applications as well as establishment of newer facilities such as the Advanced Photon Source (APS) at Argonne National Laboratory. The aim is to constitute a forum for researchers to present latest results in all aspects of the use of synchrotron facility for studying both the substrate as well as the substrate-adsorbate interactions at an electrochemical interface. Papers are invited from all branches of related spectroscopy such as X-ray absorption (XANES and EXAFS), X-ray scattering /diffraction including surface scattering and reflectivity, infrared (including far infrared and those involving microscopy), emission spectroscopy.

Application in all aspects of electrochemical technology such as electrocatalysis, sensors, electro-deposition/electrolysis, corrosion, photochemistry etc., are welcome. In addition, presentations on advances in methodology or novel materials related to synchrotron radiation measurements on electrochemical systems are also encouraged.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions and inquiries should be sent electronically to the ECS Headquarters office and to the Symposium Organizers: S.R. Conradson, Center for Material Science and Technology, Los Alamos National Laboratory, NM 875545 USA, Phone: (650) 926-3445, Fax: (650) 926-3600, E-mail: Conradson@lanl.gov; S. Mukerjee, Department of Chemistry, Northeastern University, 1 Hurtig Hall, Boston, 02115 USA, Phone: (617) 373-2382, Fax: (617) 373-8795, E-mail: Smukerje@lynx.neu.edu; and P. Schmuki, Swiss Federal Institute of Technology, Department of Materials Science, LC-DMX, EPFL-Ecublens, CH-1015 Lausanne, Switzerland, Phone: +41-21-693-4954, Fax: +41-21-693-5810, E-mail: Patrik.Schmuki@epfl.ch.

Y3--PHYSICAL ELECTROCHEMISTRY GENERAL SESSION

(Physical Electrochemistry)

Papers concerning any aspect of physical electrochemistry not covered by topic areas of others specialize symposia at this Meeting are welcome. Contributed papers will be programmed in some related order, depending on the titles and contents of the Meeting Abstracts.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Session Organizer: J. Leddy, Department of Chemistry, University of Iowa, Iowa City, IA 52242 USA, Phone: (319) 335-1720, Fax: (319) 335-1270, E-mail: johna_leddy@uiowa.edu.

Z1--ELECTRODES BASED ON CONDUCTING POLYMERS

(Physical Electrochemistry/Battery/Energy Technology)

This symposium will have a primary focus on conducting polymers as electrode materials. Although this symposium will deal mainly with electronically conducting polymers, papers dealing with ionically conducting thin films are also welcome. Papers are solicited in all areas related to these polymers. Areas of interest include: 1. Characterization of film formation and composition by electrochemical and spectroscopic (ex-situ and in-situ) techniques; 2. Charge transport in the polymer layer; 3. Characterization of these polymers by spectroscopic techniques (eg. XPS, IR, etc..); and 4. Polymer composite materials. This symposium will also be concerned with applications of conducting polymer electrode materials in the following areas: 1. Energy conversion (fuel cells, batteries, supercapacitors); 2. Sensors; 3. Electrocatalysis; and 4. Separation science.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers : V. Birss, Department of Chemistry, University of Calgary, Calgary, Alberta, Canada, T2N IN4, Phone: (403) 220-6432, Fax: (403) 289-9488, E-mail: birss@ucalgary.ca; J.P. Ferraris, Department of Chemistry, The University of Texas at Dallas, P.O. Box 830688, MSBE 26, Richardson, TX 75083-0688 USA, Phone: (972) 883-2905, Fax : (972) 883-2925, E-mail: ferraris@utdallas.edu; D. Belanger, Departement de Chimie, Universite du Quebec e Montreal, Case Postale 8888, succursale Centre-Ville, Montreal, (Quebec) Canada, H3C 3P8, Phone: (514) 987-3000 ext. 3909, Fax: (514) 987-4054, E-mail: belanger.daniel@uqam.ca; J. Prakash, Illinois Institute of Technology, 10 West 33rd Street, Chicago, IL 60616 USA, Phone: (312) 567-3639, Fax: (312) 567-8874, E-mail: prakash@iit.edu; and G. Nagasubramanian, Sandia National Laboratories, MS 0614, Albuquerque, NM 87185-0614 USA, Phone: (505) 844-1684, Fax: (505) 844-6972, E-mail: gnagasu@sandia.gov.

AA1--ELECTRODE ARRAYS AND COMBINATORIAL CHEMISTRY

(Physical Electrochemistry/Sensor/Luminescence and Display Materials)

Electrochemistry is on the forefront of combinatorial chemistry approaches to investigations of drugs, fuel cell catalysts, and other important systems. The fabrication of electrode arrays with similar and with variations in properties, the application of these arrays, and the new results obtained through the combinatorial chemical approach to research will be the main topic of this symposium. Researchers, scientists, or users of the arrays and approaches are encouraged to submit manuscripts for consideration for this symposium.

Abstracts, suggestions, and inquiries should be sent electronically to ECS Headquarters and the Symposium Organizers: J.R. Stetter, Illinois Institute of Technology, BCPS Department, 3101 S. Dearborn Avenue, Chicago, IL 60616 USA, Phone: (312) 567-3443, Fax: (312) 567-3494, E-Mail: stetter@charlie.cns.iit.edu; D.A. Buttry, Department of Chemistry, University of Wyoming, Laramie, WY 82071-3838 USA, Phone: (307) 766-6677, Fax: (307) 766-2807, E-mail: buttry@uwyo.edu; E.S. Smotkin, Illinois Institute of Technology, Department of Chemical Engineering, 10 West 33rd Street, Chicago, IL 60616-3730 USA, Phone: (312) 567-3453, Fax: (312) 567-8882, E-mail: smotkin@iit.edu; D.A. Buttry, and J.M. Pope, Blue Sky Applied Technologies, Inc., 365 North 9th STreet, Laramie, WY 82072-3380 USA, Phone: (307) 721-2368, Fax: (307) 721-2259, E-mail: jjl@csi.com.

AA2--THE EIGHTH INTERNATIONAL SYMPOSIUM ON OLFACTION AND THE ELECTRONIC NOSE - "ISOEN 8"

(Sensor)

We plan to hold the 8th International Symposium on Olfaction and the Electronic Nose in conjunction with the 199th Meeting of The Electrochemical Society. The "ISOEN '01" Symposium, also called the "ISOEN 8" Conference, builds upon the prior successful conferences in Tubingen, Germany [ISOEN '99], and Brighton, England [ISOEN '00, the 7th symposium]. The international symposium deals with recent scientific and technical advances in the science and understanding of olfaction, characterization of odors and complex chemical mixtures using multisensor arrays and associated pattern classification techniques. An Electronic Nose is an instrument with a sampling system, an array of chemical sensors, and a pattern classifier for the purpose of analysis of odors or other analytes.

While many applications exist for the qualitative analysis such as the spoilage of foods or off-odors in packages or medical diagnosis, quantitative analysis is also possible. The ISOEN 8 symposium consists of a 3-day technical program with more than 100 papers and posters plus an exhibit of the latest commercial technology in multi-sensor devices. Scientists, Engineers, Analytical Chemists, and Electrochemists involved in academic or industrial research as well as Industrial users of the E-Nose technology are brought together to discuss the science of the E-Nose and its applications. Papers in the areas of chemical sensors, sensor arrays, sampling systems, pattern classification and signal processing, miniature arrays and micro-noses, and new and successful applications of the electronic nose are encouraged. Further, papers in the theory of sensory analysis especially correlating to electronic nose instruments are welcome along with more routine QA and QC applications. Special sections of the symposium will highlight papers by users as well as new method development especially in calibration and stability of ENs, and emerging multiparameter instrumentation for detection of gases and odors.

This symposium will include 3-4 days of oral presentations, a poster session, an Instrument Manufacturer's Forum, a User's Forum, a Technical Exhibit for Instrumentation and Related Technology, and the Wolfgang Goepel award for the best technical paper.

Publication of a symposium Proceedings Volume is planned and will be available at the symposium and a special "ISOEN 8" Banquet is planned for Tuesday evening. Publication of a Proceedings Volume is planned and will be available at the meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a camera ready abstract and a camera ready copy of the full proceedings volume manuscript [4 pages] and list of key words by October 1, 2000.

Deadlines: Brief meeting abstract submitted via the ECS web page by October 1, 2000. Full Proceedings Volume manuscript to the Symposium Organizer in the USA by October 1, 2000 for publication in the bound proceedings volume for ISOEN 8.

Abstracts, questions, or suggestions can be sent electronically to the ECS Headquarters Office and the Symposium Organizers: J.R. Stetter, Illinois Institute of Technology, BCPS Department, 3101 S. Dearborn Avenue, Chicago, IL 60616 USA, Phone: (312) 567-3443, Fax: (312) 567-3494, E-Mail: stetter@charlie.cns.iit.edu; H. Baltes, ETH Zurich, Physical Electronics Laboratory, Honggerberg, HPT-H6, CH-8093 Zurich, Switzerland, Phone: 41-1-633-2090, Fax: 41-1-633-1054 E-mail: baltes@iqe.phys.ethz.ch; A. D'Amico, University of Rome "Tor Vergata", Dipartiment o di Ingegneria Elettronica, Via di Tor Vergata, I00133, Rome Italy, Phone: 39-06-7259-7349, Fax: 39-06-2020-519, E-Mail: damico@eln.uniroma2.it, I. Lundstrom, Linkoping University, Division of Applied Physics, S-58183, Linkoping, Sweden, Phone: 46-13-281-200, Fax: 46-13-288-969, E-mail: thu@ifm.liu.se; P. Mielle, Institute Nationale de la Recherche Agronomoque, Laboratory de Recherches sur les Aromes, 17 rue Sully, F-21034 Dijon, France, Phone: 33-380-69-30-86, Fax: 33-380-69-30-86, E-Mail: Patrick.Mielle@dijon.inra.fr; T. Moriizumi, Tokyo Institute of Technology INCOCSAT, Faculty of Engineering, Ookayama, Meguro-Ku, Tokyo 152, Japan, Phone: 81-3-5734-3049, Fax: 81-3-5734-2828, E-mail: mori@ee.titech.ac.jp; G. Sberveglieri, University of Berscia, Department of Chemistry and Physics for Materials, Via Valotti 9, I-25133,Brescia, Italy, Phone: 39-030-371-5771, Fax: 39-030-209-1271, E-mail: sbervegl@tflab.ing.unibs.it; D.R. Walt, Tufts University, Chemistry Department, 62 Talbot Avenue, Medford, MA 02155 USA, Phone: (617) 627-3470, Fax: (617) 627-3443, E-mail: dwalt@emerald.tufts.edu; J. Gardner, The University of Warwick, Department of Engineering, Gibbet Hill Road, Coventry, CVA 7AL, United Kingdom, Phone: 44-0-1203-523-523, ext.3595, Fax: 44-0-1203-418-922, E-mail: j.w.gardner@warwick.ac.uk; K. Persaud, UMIST, DIAS, Sackville Street, P.O. Box 88, Manchester N60 1QD, United Kingdom, Phone: 44-161-200-4892, Fax: 44-161-200-4879, E-mail: KCPERSAUD@UMIST.AC.UK; P.J. Hesketh, Georgia Institute of Technology, George W. Woodruff School of Mechanical Engineering, Atlanta, GA 30332-0405 USA, Phone: (404) 894-3200, Fax: (404) 894-1658, E-mail: phesketh@sununo.me.gatech.edu; U.P. Weimar, University of Tubingen Auf der Morgenstelle 8 D-72076 Tubingen, Germany, Phone: 49-7071-29-787-65, Fax: 49-7071-29-5960, E-mail: upw@ipc.uni-tuebingen.de; N. Barsan, University of Tubingen Auf der Morgenstelle 8 D-72076 Tubingen, Germany, Phone: 49-7071-29-787-65, Fax: 49-7071-29-5960, E-mail: upw@ipc.uni-tuebingen.de; M. Frank, University of Tubingen Auf der Morgenstelle 8 D-72076 Tubingen, Germany, Phone: 49-7071-29-787-65, Fax: 49-7071-29-5960, E-mail: upw@ipc.uni-tuebingen.de; H. Wohltjen, Microsensor Systems, 62 Corporate Court, Bowling Green, KY 42103 USA, Phone: (270) 745-0099, Fax: (270) 745-0095, E-mail: hwohltjen@msi.sawtek.com; and M.A. Butler, Microsensor R & D Department, MS 1425, Sandia National Laboratories, Albuquerque, NM 87185-1425 USA, Phone: (505) 844-6897, Fax: (505) 844-1198, E-mail: mabutle@sandia.gov

AA3--DNA SENSORS

(Sensor/Organic and Biological Electrochemistry/New Technology Subcommittee)

Detection of specific DNA sequences is a growing field of research and development. DNA detection can be used for applications such as identifying bacterial organisms, monitoring the expression of mRNA to follow disease progression, detecting the occurrence of polymorphisms in genomic DNA that predispose man to disease, and for drug screening and discovery. This symposium will cover basic research and technologies that are important for developing a complete DNA-based detection system. The detection system could be targeting DNA analytes ranging from small DNA or RNA fragments such as oligonucleotides to large sections of genomic DNA. Areas of interest include: 1. DNA sensors based on optical, electrochemical or mass transduction mechanisms; 2. DNA sensor arrays. This includes research topics such as array fabrication, surface chemistry optimization for DNA hybridization, and data processing applied to DNA arrays; 3. Microfluidic devices for DNA sample processing and detection. These devices may include DNA amplification techniques (e.g. PCR) or analytical signal amplification techniques (e.g. enzyme linked amplification) or novel methods for cell lysis or DNA concentration and purification.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters office and to the Symposium Organizers: C. Bruckner-Lea, Pacific Northwest National Laboratory, P.O. Box 999, Mailstop K8-93, Richland, WA 99352 USA, Phone: (509) 376-2175, Fax: (509) 376-1044, E-mail: cindy.bruckner-lea@pnl.gov; W. Van Schalkwijk, SelfCharge Inc., 6742 NE 185th Avenue, Suite 230, Redmond, WA 98052 USA, Phone: (425) 881-9199; Fax: (425) 883-1447; E-mail: powersci@aol.com; F.A. Schultz, Department of Chemistry, Indiana University Purdue University Indianapolis, 402 North Blackford Street, Indianapolis, IN 46202 USA, Phone: (317) 278-2027, Fax: (317) 278-4701, E-mail: schultz@chem.iupui.edu; and C.A. Mirkin, Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208 USA, Phone: (847) 491-2907, Fax: (847) 491-7713, E-mail: camirkin@chem.nwu.edu.