207th ECS Meeting - Quebec City, Canada

May 15 - May 20, 2005

PROGRAM INFORMATION
 

H1 - Eighth International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics

Dielectric Science and Technology/Electronics and Photonics/High Temperature Materials
 

Monday, May 16, 2005

Room 204B, Level 2, Quebec City Convention Center

Interface Characterization

Co-Chairs: R.E. Sah & M.J. Deen
TimeAbs#Title and Authors
10:00 Introductory Remarks (20 Minutes)
10:20 395 Electrically Active Interface Defects in Si(100)/SiO2 and Si(100)/HfO2 Structures P. Hurley (NMRC-UCC) and B. O'Sullivan (IMEC, Kapeldreef 75, B-3001 Leuven Belgium)
11:00 396 Angle-resolved Photoelectron Spectroscopy Study on Atomic-scale Depth Profile of Composition and Chemical Structure of Gate Dielectrics T. Hattori and H. Nohira (Musashi Institute of Technology)
11:40 397 A Method for Studying the Different Kinds of Traps at the Si-SiO2 Interface in MOS Devices D. Bauza and Y. Maneglia (IMEP)
 

Defects/Plasma-Induced Damage

Co-Chairs: M.J. Deen & W.D. Brown
TimeAbs#Title and Authors
14:00 398 Novel Characterization Techniques for Interface Related Defects in Semiconductor-Insulator Systems B. Hamilton (The University of Manchester), M. Ishii (Spring8 JASRI, Hyogo, Japan) and A. Peaker (The University of Manchester)
14:40 399 Importance of Interface Traps on Dielectric Characteristics of Nanometer-thick Gate Insulators Y. Nishioka (Nihon University)
15:20 Intermission (20 Minutes)
15:40 400 PE-CVD Induced Damage on Ultra Thin SiO2 layers G. Cellere (Padova University), A. Paccagnella (DEI, Padova University, Italy) and M. Valentini (STMicroelectronics, Agrate Brianza, Italy)
16:20 401 Charging Damage During Plasma Enhanced SiN/SiO Thin Film Deposition K. Cheung (Rutgers University)
17:00 402 Plasma Treatments and PECVD Dielectric Deposition Impact on Porous SiOC V. Jousseaume (CEA), P. Maury (STMicroelectronics), C. Le Cornec, A. Zenasni, B. Remiat (CEA-LETI), F. Fusalba and G. Passemard (STMicroelectronics)
 

Tuesday, May 17, 2005

Room 204B, Level 2, Quebec City Convention Center

Film Preparation, Characterization, and Applications I

Co-Chairs: R.E. Sah & K.B. Sundaram
TimeAbs#Title and Authors
08:20 403 Room Temperature Deposited Si3N4 Characterization and Applications in MMICs K. Elgaid, H. Zhou, C. Wilkinson and I. Thayne (University of Glasgow)
09:00 404 High Density Plasma Growth of Thermal Quality SiO2 Thin Films P. Joshi, Y. Ono, A. Voutsas and J. Hartzell (SHARP Labs of America, Inc.)
09:40 Intermission (20 Minutes)
10:00 405 Optical Properties of Nanostructures Based on Silicon Rich Silicon Oxide (SRSO) Thin Films P. Mascher, T. Roschuk, J. Wojcik, M. Flynn, E. Irving and O. Zalloum (McMaster University)
10:40 406 Stress Control of Si-based PECVD Dielectrics K. Mackenzie, D. Johnson, M. DeVre, R. Westerman and B. Reelfs (Unaxis USA Inc.)
11:20 407 Nitridization of Semiconductor Surfaces for Improved Properties of Electrical and Optical Devices C. Silfvenius, P. Blixt, C. Lindstrom and A. Feitisch (Comlase NT AB)
 

Film Preparation, Characterization, and Applications II

Co-Chairs: G. Lucovsky, P. Mascher & J. Yugami
TimeAbs#Title and Authors
14:00 408 Porosity and Critical Characteristics of Silica Based Low Dielectric Constant Films M. Baklanov (IMEC)
14:40 418 On the Trapping Kinetics of Electron Traps Created in Silicon Dioxides J. Zhang and M. Chang (Liverpool John Moores University)
15:00 410 High Precision XPS Measurement of SiON Thickness and N Dose W. Nieveen (Charles Evans & Associates)
15:20 411 Effect of Post Nitridation Anneal on Physical Properties of Plasma Nitrided Oxides J. Bienacel (ST Microelectronics), D. Barge and P. Garnier (Philips Semiconductors)
15:40 Intermission (20 Minutes)
16:00 412 Nitrogen Profile and Electrical Properties of Reoxidized Thermally Grown Silicon Nitrides A. Ludsteck, J. Schulze, I. Eisele (Universitaet der Bundeswehr Muenchen), W. Dietl, H. Chung, Z. Nenyei (Mattson Thermal Products GmbH), A. Bergmaier (Universität der Bundeswehr München) and G. Dollinger (Universitat der Bundeswehr München)
16:20 413 Study of Hydrogen Desorption from PECVD Silicon Nitride and Induced Defect Passivation D. Benoit (STMicroelectronics Crolles), P. Morin (ST Microlectronics) and J. Regolini (STMicroelectronics Crolles)
16:40 414 Tensile Contact Etch Stop Nitride for nMOS Performance Enhancement: Influence of the Film Morphology S. ECSMEETPerson, C. Reddy (Freescale Semiconductors), C. Ortolland (Phillips Semiconductors), S. Orain (Philips Semiconductors), M. Basso, F. Arnaud and K. Barla (STMicroelectronics)
17:00 415 Analysis of the Surface Potential for MOS Structure Device H. Watakabe and T. Sameshima (Tokyo university of agriculture and technology)
 

Wednesday, May 18, 2005

Room 204B, Level 2, Quebec City Convention Center

Ultrathin Film/ Reliability I

Co-Chairs: P.K. Hurley& R.E. Sah
TimeAbs#Title and Authors
10:00 416 Hydrogen Model for Negative Bias Temperature Instabilities in MOS Gate Insulators D. Fleetwood, X. Zhou, L. Tsetseris, S. Pantelides and R. Schrimpf (Vanderbilt University)
10:40 417 Physical Mechanisms of Ultra-thin Silicon Dioxide Degradation and Breakdown E. Vogel (NIST)
11:20 409 An Investigation of Positive Charges Formed During Negative Bias Temperature Stress J. Zhang and M. Chang (Liverpool John Moores University)
 

Ultrathin Film/ Reliability II

Co-Chairs: D.M. Fleetwood, J.F. Zhang & Y. Kamakura
TimeAbs#Title and Authors
14:00 419 Present Reliability Issues in Ultra-thin Oxinitride Films B. Kaczer, R. Degraeve, V. Arkhipov and G. Groeseneken (IMEC)
14:40 420 Negative-Bias-Temperature Instability in Si/SiO2 and Si/SiON Structures A. Revesz (Revesz Associates) and H. Hughes (Naval Reserach Laboratory)
15:20 Intermission (20 Minutes)
15:40 421 Negative Bias Temperature Instability in Ultra-thin SiON Y. Mitani (Toshiba Corporation), H. Satake (MIRAI Project - ASET) and A. Toriumi (The University of Tokyo)
16:20 422 Oxide and Hot Carrier Reliability Studies for Strained Si-on Relaxed SiGe MOS Devices S. Banerjee (University of Texas), S. Joshi, D. Ahmad, M. Palard, D. Kelly, D. Onsongo, S. Dey (University of Texas at Austin), L. Fei (MEMC Electronic Materials Inc.), T. Torack, M. Seacrist (MEMC) and B. Kellerman (MEMC Electronic Materials Inc.)
17:00 423 Onset of Dielectric Breakdown in Silicon Oxynitride Thin Films S. Habermehl and R. Apodaca (Sandia National Laboratories)
 

Thursday, May 19, 2005

Room 204B, Level 2, Quebec City Convention Center

Emerging Dielectrics I

Co-Chairs: G. Reimbold, J. Yota & D. Misra
TimeAbs#Title and Authors
08:20 424 Properties of High k and Extremely Thin Silicon Nitride Stacks S. Campbell, Z. Zhang (University of Minnesota), Y. Fedorenko, L. Truong (University of Leuven), X. Shi (University of Minnesota), V. Afanas'ev and A. Stesmans (University of Leuven)
09:00 425 Charge Trapping Characteristics of Hf-Based Dielectrics J. Lee (University of Texas at Austin)
09:40 Intermission (20 Minutes)
10:00 426 Some Special Reliability Features Associated with Hf-based High-k Gate Dielectrics T. Ma (Yale University)
10:40 427 Point Defects and Traps in Stacks of Ultrathin High-k Metal Oxides on Si Probed by Electron Spin Resonance: The Si/HfO2 System and N Incorporation A. Stesmans (University of Leuven)
11:20 428 III-V Heterostructure MOSFET Technology with High-k Gate Dielectric Stack M. Passlack (Freescale Semiconductor), R. Droopad, J. Abrokwah and K. Rajagopalan (Freescale Semiconductor, Inc.)
 

Emerging Dielectrics II

Co-Chairs: J.F. Zhang, R.E. Sah & M.J. Deen
TimeAbs#Title and Authors
14:00 429 Electrical Characterization of High-k Devices: Charges and Traps Effects on Instability, Reliability, and Mobility Behavior G. Reimbold, M. Casse, X. Garros, C. Leroux (CEA-LETI), J. Mitard (STMicroelectronics) and F. Martin (CEA-LETI)
14:40 430 Recent Development of CMOS Technology with Hf-Based High-k Dielectric S. Song, G. Bersuker (Sematech), Z. Zhang (Texas Instruments), B. Lee (IBM), C. Huffman (Texas Instruments), P. Kirsch (IBM), S. Bae (Sematech), P. Majhi (Intel), N. Moumen and C. Ramiller (IBM Assignee, Sematech)
15:20 Intermission (20 Minutes)
15:40 431 Far- and Mid- Infrared Absorption Study of HfO2/SiO2/Si System A. Toriumi, K. Tomida, H. Shimizu, K. Kita and K. Kyuno (The University of Tokyo)
16:20 432 Multifunctional Oxides on Si A. Grishin (Royal Institute of Technology)
17:00 433 Pulsed-MOCVD Growth of Transition Metal Oxides J. Thery (LTM), T. Baron (CNRS), C. Dubourdieu (LMGP), C. Ternon (LTM), H. Roussel (LMGP), S. Coindeau (CMTC/LMGP), B. Pelissier (LTM) and P. Ioan-Lucian (Spintec)
17:20 434 Investigation and Characterization of MIM Structures Based on MOCVD and PEALD Ta2O5 Films E. Deloffre (STMicroelectronics), C. Wyon (CEA-LETI) and M. Gros-Jean (STMIcroelectronics)
 

Friday, May 20, 2005

Room 204B, Level 2, Quebec City Convention Center

Emerging Dielectrics III

Co-Chairs: J. Yota, J.F. Zhang & R.E. Sah
TimeAbs#Title and Authors
08:20 435 Pore Sealing for Low-k Delectric Integration into Integrated Circuits T. Cale (RPI), C. Jezewski (SUNY-ALBANY), D. Bae (RPI) and J. Senkevich (Brewer Science)
09:00 436 Characteristics of Organic Film Deposited by Plasma-enhanced CVD Using BCB Resin S. Sugitani, H. Matsuzaki and T. Enoki (NTT Photonics Laboratories)
09:40 Intermission (20 Minutes)
10:00 437 Low-k Dielectrics: Implications to Nanoelectronic and Photonic Applications H. Zhou, F. Shi (University of California, Irvine), B. Zhao (Skyworks Inc.) and J. Yota (Skyworks Solutions, Inc.)
10:40 438 Chemical Mechanical Polishing (CMP) of Doped and Undoped Ceramic and Polymeric Dielectric Materials for Microelectronic Applications P. Zantye, A. Kumar (University of South Florida) and J. Yota (Skyworks Solutions, Inc.)
11:20 Concluding Remarks (20 Minutes)