209th ECS Meeting - Denver, Colorado

May 07 - May 12, 2006

PROGRAM INFORMATION
 

H2 - Plasma and CVD Processes

Dielectric Science and Technology
 

Wednesday, May 10, 2006

Plaza Court 5, Concourse Level

CVD Processes

Co-Chairs: M. Sunkara and S. Seal
TimeAbs#Title and Authors
10:00 361 Minimization of Trench Isolation Induced Stress Effects on Transistor Layout by SACVD S. Hsu, T. Tsai, N. Chen, W. Hung, C. Huang and S. Tzou (United Microelectronics Corp.)
10:20 362 Particle Surface Design by Initiated Chemical Vapor Deposition (iCVD) K. K. Gleason and K. K. Lau (Massachusetts Institute of Technology)
10:40 363 Atomic Layer Deposition of Ru by Using a New Ru-precursor J. Lee, Y. Song, K. Lee, Y. Lee (Korea Polytechnic University) and H. Jang (Mecharonics. Co. Ltd.)
 

Plasma Processes

TimeAbs#Title and Authors
11:00 364 Properties of Si Nanocrystals Formed in Inductively Coupled Plasma CVD Grown SiOx Thin Films T. R. Roschuk, D. Comedi, O. Zalloum, J. Wojcik, E. Chelomentsev, M. Flynn and P. Mascher (McMaster University)
11:20 365 A Novel High Tensile Stress SiN for Strained Silicon Technology Application T. Tsai, N. Chen, H. Liao, S. Hsu, C. Huang and S. Tzou (United Microelectronics Corp.)
11:40 366 Tungsten Etching For Tight Pitch 3-D Memories M. Konevecki, U. Raghuram and V. Dunton (Matrix Semiconductor)
 

Plasma Processes (Cont.)

Co-Chairs: G.S. Mathad and M. Engelhardt
TimeAbs#Title and Authors
14:00 367 Plasma Etching Challenges of New Materials Involved in Gate Stack Patterning for sub 45 nm Technological Nodes O. Joubert (LTM), A. Legouil (STMicroelectronics), R. Ramos (Freescale), M. Helot (STMicroelectronics), G. Cunge, L. Vallier and T. Chevolleau (LTM/CNRS)
14:40 368 Study of a 4 Microns Oxide Etching using C5F8/O2/Ar plasma F. Judong, L. Depoyan, N. Hotellier, M. Baudrier and P. Bouillon (ST Microelectronics)
15:00 369 Surface Activation Using Remote Plasma for a New Wafer Bonding Route to Strained-Si S. Sood and R. Belford (Belford Research Inc.)
15:20 Intermission (20 Minutes)
15:40 370 H2 Plasma as Porogen Removal Treatment to Perform Porous ULK V. Jousseaume (CEA-LETI), M. Payet, P. Maury and G. Passemard (STMicroelectronics)
16:00 371 Optimized Mechanical Anchoring for Improvement of Adhesion Between Electroless Copper and Epoxy-Based Polymers H. Hayden, D. Bhusari (Georgia Institute of Technology), R. Tanikella (Intel Corporation), S. Bidstrup Allen and P. Kohl (Georgia Institute of Technology)
16:20 372 Plasma Treatments to Enhance Electroless Copper Adhesion on Smooth Epoxy-Based Polymer Surfaces H. Hayden, D. Bhusari (Georgia Institute of Technology), R. Tanikella (Intel Corporation), S. Bidstrup Allen and P. Kohl (Georgia Institute of Technology)
16:40 373 Evaluation of Copper CMP with Ruthenium Liner Layer for Advanced Copper Deposition Technologies S. Paul, H. Wang and K. Musaka (Ebara Technologies Inc.)
17:00 374 Characterization of Dielectric Surfaces by Electrochemical Impedance Spectroscopy K. Sidi Ali Cherif, S. Kordic (Philips Semiconductors), J. Farkas (Freescale Semiconductor) and S. Szunerits (LEPMI)