209th ECS Meeting - Denver, Colorado

May 07 - May 12, 2006

PROGRAM INFORMATION
 

I1 - Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing II

Dielectric Science and Technology
 

Monday, May 8, 2006

Plaza Court 1, Concourse Level

Materials for Nanosystems

Co-Chairs: D. Misra and H. Iwai
TimeAbs#Title and Authors
10:00 Introductory Remarks (5 Minutes)
10:05 375 Semiconductor Industry in the Nano-Domain Emerging Enabling Materials L. Manchanda (University of Denver)
10:40 376 Building Nano-Composite Dielectric Materials from the Bottom Up: Carbon Nanotubes Based Nano-Structures H. Grebel (New Jersey Institute of Technology)
11:10 377 Mixed Oxides as High-k Gate Dielectric Films Y. Kuo (Texas A&M University)
11:40 378 Biocompatibility of Diamond like Carbon with Ti Coated Films for Titanium Implant K. Ou (Gratuate Institute of Oral Sciences), M. Lin, S. Chiou (National Kaohsiung University of Applied Science), Y. Chung and D. Gan (National Sun Yat-sen University)
 

Metal Gate High-k Dielectrics

Co-Chairs: L. Manchanda and Y. Kuo
TimeAbs#Title and Authors
14:00 379 New Theory of Effective Workfunctions at Metal/high-k Dielectric Interfaces -Application to Metal/high-k HfO2 and La2O3 Dielectric Interfaces- K. Shiraishi (University of Tsukuba), T. Nakayama (Chiba University), Y. Akasaka (Selete), S. Miyazaki (Hiroshima University), T. Nakaoka (University of Tsukuba), K. Ohmori (NIMS), P. Ahmet (Tokyo Institute of Technology), K. Torii (Selete), H. Watanabe (Osaka University), T. Chikyow (NIMS), Y. Nara (Selete), H. Iwai (Tokyo Institute of Technology) and K. Yamada (Waseda University)
14:30 380 Integration of HfxTayN Metal Gate Electrode with High-k Gate Dielectric in MOS Devices K. Chang-Liao (National Tsing Hua University) and C. Cheng (National Formosa University)
14:50 381 Effective Work Function Modulation by As Implantation in Metal Gate Stacks. R. Singanamalla (IMEC), H. Yu (IMEC vzw), T. Janssens, T. Witters, T. Schram, S. Kubicek, S. De Gendt, M. Jurczak and K. De Meyer (IMEC)
15:10 Intermission (20 Minutes)
 

Processing of High-k Dielectrics

Co-Chairs: K. Shiraishi and M. Tao
TimeAbs#Title and Authors
15:30 382 Extensive Studies for the Effect of Nitrogen Incorporation into Hf-based High-k Gate Dielectrics N. Umezawa (National Institue for Materials Science), K. Shiraishi (University of Tsukuba), H. Watanabe (Osaka University), K. Torii, Y. Akasaka (Selete), S. Inumiya (Semiconductor Leading Edge Technology Inc.), M. Boero, A. Uedono (University of Tsukuba), S. Miyazaki (Hiroshima University), T. Ohno (National Institue for Materials Science), T. Chikyow (NIMS), K. Yamabe (University of Tsukuba), Y. Nara (Selete) and K. Yamada (Waseda University)
16:00 383 Combinatorial Fabrication and Characterization of Oxide and Metal Thin Film Composition Spreads P. Ahmet (Tokyo Institute of Technology), T. Nagata, D. Kukuruznyak (National Institute for Materials Science), K. Ohmori (NIMS), K. Kakushima, K. Tsutsui (Tokyo Institute of Technology), T. Chikyow (NIMS) and H. Iwai (Tokyo Institute of Technology)
16:30 384 Metal Contamination from Process Materials used in Wet Cleaning of Silicon Wafer. D. Sinha (Sumco USA)
16:50 385 Effect of Nitrided Silicate as a Buffer Layer for HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition S. Kim, S. Woo, H. Hong and H. Jeon (Hanyang University)
 

Tuesday, May 9, 2006

Plaza Court 1, Concourse Level

Nanosystem Reliability

Co-Chairs: V. Desai and N. Umezawa
TimeAbs#Title and Authors
08:30 386 Product Level Reliability Challenges for 65nm Technologies H. Puchner, T. Nigam and K. Manjularani (Cypress Semiconductor)
09:00 387 Lanthanum Oxides for Gate Insulator Application K. Kakushima, P. Ahmet, N. Sugii (Tokyo Institute of Technology), K. TSUTSUI (Tokyo Insitute of Technology), T. Hattori and H. Iwai (Tokyo Institute of Technology)
09:30 388 High-k Dielectric/Semiconductor Interface Engineering Using A Valence-Mending Technique M. Tao (The University of Texas at Arlington)
10:00 Intermission (20 Minutes)
 

Novel Devices

Co-Chairs: H. Puchner and K. Kakushima
TimeAbs#Title and Authors
10:20 389 Nanocrystalline Silicon Quantum Dot Devices S. Oda and H. Mizuta (Tokyo Institute of Technology)
10:50 390 Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories S. Miyazaki (Hiroshima University), M. Ikeda and K. Makihara (Hiroshima Univ.)
11:20 391 Recent Progress of SiGe Heterostructure Technologies for Novel Devices M. Miyao, H. Kanno and T. Sadoh (Kyushu University)
11:50 392 Influence of Dielectric on Organic Electronic Devices V. Budhraja and J. Kumar (IIT Kanpur)
 

Novel Devices and Memory Technology

Co-Chairs: T. Chikyo and P. Ahmet
TimeAbs#Title and Authors
14:00 393 Advanced TiN Metal-Gate FinFET Technology Y. Liu, E. Sugimata, T. Matsukawa, M. Masahara, K. Endo, I. Kenichi, T. Shimizu, S. Ouchi and E. Suzuki (AIST)
14:30 394 New Non-Volatile Memory with Magnetic Nano-Dots M. Koyanagi, J. Bea, C. Yin, T. Fukushima and T. Tanaka (Tohoku University)
15:00 395 HfAlO and HfSiO Based Dielectrics for Future DRAM Applications J. Heitmann (Infineon Technologies), A. Avellan, E. Erben, S. Kudelka (Infineon) and U. Schroeder (Infineon Technologies)
15:30 396 Thermal Stability Study of Al2O3 MIM Capacitor for DRAM Application J. Lee (Ching Yun University)
15:50 Intermission (20 Minutes)
 

Low-k DielectricTechnology

Co-Chairs: Y. Liu and T. Ogura
TimeAbs#Title and Authors
16:10 397 Chemical-Mechanical Polishing of SiCOH-Based Low-k Dielectrics W. Tseng (IBM Microelectronics), A. Sakamoto (SONY Electronics Inc), S. Ponoth (IBM Semiconductor R&D Center), D. Hong (Samsung Electronics Co), L. Economikos (IBM Corporation), S. Vogt, A. Ticknor, S. Cohen, R. Wanner and B. Kim (IBM Semiconductor R&D Center)
16:30 398 Copper Diffusion and Corrosion Behavior through the Hillock Defect found beneath the weak SiN Dielectric Barrier in Dual Damascene Process S. Kim, J. Hong and J. Han (DongbuAnam Semiconductor)
16:50 399 An Easy Method to Measure the Damaged Thickness of Low-k Film After Ash Process C. Shim, H. Lim and S. Jung (Dongbuanam Semiconductor Inc.)
 

Exhibit Hall, Concourse Level

Tuesday Evening Poster Session

Co-Chairs: T. Chikyo and D. Misra
TimeAbs#Title and Authors
o 400 Corrosion Tests on Passivation Layer of Silicon Wafer for Implantable Electrochemical Sensors and Medical Devices A. Agazaryan (Second Sight Medical Products, Inc), H. Jiang (Second Sight Medical Products, Inc.) and D. Zhou (Second Sight Medical Products, Inc)
o 401 Electrical Characteristics of Erbium Oxide Films on Silicon Substrate by Reactive RF sputtering for Different Metal Gate T. Pan, C. Chen, J. Lee, C. Hsieh and C. Lai (Chang Gung University)
o 402 The Low Leakage Current Density of MIS with SiO2 Film made by ICP-CVD Y. Lu (Kun Shan University of Technology), S. Tsai (National Cheng Kung University) and M. Hon (Da-Yeh University)
o 403 Degradation in Hafnium Oxynitride (HfNO) High-k Dielectric under Nano-scaled Ramped Voltage Stress by Using Conductive Atomic Force Microscopy Y. Wu (National Chi-Nan University), T. Cheng (National Chi-Nan Univerisyt) and H. Chen (National Chi-Nan University)
 

Wednesday, May 10, 2006

Plaza Court 1, Concourse Level

Characterization of Dielectrics

Co-Chairs: H. Iwai and Jeff Peterson
TimeAbs#Title and Authors
10:00 404 Angle-resolved Photoelectron Spectroscopy Study on Gate Insulators T. Hattori, K. Kakushima (Tokyo Institute of Technology), K. Nakajima (Kyoto University), H. Nohira (Musashi Institute of Technology), K. Kimura (Kyoto University) and H. Iwai (Tokyo Institute of Technology)
10:30 405 High-k Gate Stack Engineering and Low Frequency Noise Performance C. Claeys, E. Simoen (IMEC), P. Srinivasan (IMEC / New Jersey Institute of Tech.) and D. Misra (New Jersey Institute of Technology)
11:00 406 Advanced Gate Stacks with Fully Silicided(FUSI) Gates and High-k Dielectrics for Low Power CMOS T. Ogura, M. Saitoh, K. Takahashi, K. Manabe, A. Toda, M. Terai, K. Watanabe, K. Masuzaki, T. Iwamoto, T. Hase, T. Tatsumi and H. Watanabe (NEC Corporation)
11:30 407 Charge Trapping in High-k Gate Dielectrics: A Recent Understanding D. Misra and N. Chowdhury (New Jersey Institute of Technology)
12:00 408 Mobility Degradation Analysis for La2O3 nMISFET J. Ng, N. Sugii, K. Kakushima, P. Ahmet, T. Hattori, K. Tsutsui and H. Iwai (Tokyo Institute of Technology)
12:20 409 Characteristics of Atomic Layer Deposited HfO2 Films using Remote Plasma on the Pre-deposited Hf Metal Layer H. Hong, S. Kim, S. Woo and H. Jeon (Hanyang University)