209th ECS Meeting - Denver, Colorado

May 07 - May 12, 2006

PROGRAM INFORMATION
 

K1 - State-of-the-Art Program on Compound Semiconductors XLIV

Electronics and Photonics
 

Monday, May 8, 2006

Plaza Court 2, Concourse Level

Advanced Compound Semiconductor Technology and Materials

Co-Chairs: V. Gambin
TimeAbs#Title and Authors
10:00 479 Materials Issues for the Heterogeneous Integration of III-V Compounds M. Goorsky, S. L. Hayashi (University of California, Los Angeles), A. Noori and D. Bruno (University of California Los Angeles)
10:40 480 Design Approaches and Materials Processes for Ultrahigh Efficiency Lattice Mismatched Multijunction Solar Cells H. A. Atwater (California Institute of Technology)
11:20 481 High-resolution Continuous-wave Absorption Measurements on InGaAs/GaAs Self-assembled Quantum Dots K. L. Silverman (NIST-Boulder), J. Berry and R. Mirin (NIST)
 
TimeAbs#Title and Authors
14:00 482 Ultra-low Threshold Lasing in a Microdisk Cavity G. Solomon, S. Gotzinger and Z. Xie (Stanford University)
14:40 483 Role of Dislocations in Hydrogen-induced Exfoliation of Narrow Bandgap Semiconductors A. Noori (University of California Los Angeles), S. L. Hayashi, M. Goorsky (University of California, Los Angeles), R. Sandhu (Northrop Grumman) and A. Cavus (Northrop Grumman Space Technology)
 

Wide Bandgap Devices and Technology

Co-Chairs: A. Baca
TimeAbs#Title and Authors
15:20 484 MBE-Grown AlGaN/GaN HEMTs on SiC J. Speck (University of California)
16:00 485 PVT Growth at High Temperature: Wide Bandgap Semiconductors N. B. Singh, B. Wagner, M. Sherwin, A. Berghmans, M. Aumer, D. Thomson, D. Kahler, D. Knuteson and J. Hawkins (Northrop Grumman Corporation)
16:40 486 Silica Enhanced Growth of Gallium Nitride Nanowires on Si (111) L. Chou, C. Hsieh, Y. Chueh and M. Chang (National Tsing Hua University)
 

Tuesday, May 9, 2006

Plaza Court 2, Concourse Level

Compound Semiconductor Devices

Co-Chairs: G. Solomon
TimeAbs#Title and Authors
08:00 487 Carbon Nanotube Field Effect Transistors for High Speed Electronics H. Zhang (Northrop Grumman)
08:40 488 High Performance Sub-Micron InP/InGaAs Heterojunction Bipolar Transistor with Advanced Interconnect Technology P. Chang (Northrop Grumman), D. Scott, D. Sawdai, L. Dang, D. Li, X. Zeng, P. Nam, J. Wang (Northrop Grumman Space Technology), V. Gambin (Northrop Grumman Space Technologies), P. Wen, B. Chan, B. Oyama, M. Barsky, A. Gutierrez-Aitken and A. Oki (Northrop Grumman Space Technology)
09:00 489 Influences of Gate Recess Structure on the DC Characteristics of 0.1-Micron Metamorphic HEMTs J. Oh, Y. Back, S. Choi, S. Moon, B. Lee, J. Rhee and S. Kim (Dongguk University)
09:20 490 The Mechanism of Phototransistors and Its Model in OEIC Application S. Tan, C. Liao, K. Liu, H. Chen, Y. Huang and H. Chen (Ching Yun University)
 

Advanced Compound Semiconductor Technology and Materials II

Co-Chairs: N. Singh
TimeAbs#Title and Authors
10:00 491 Visualization of Electric and Magnetic Fields of Nanomaterials by Electron Holography D. Shindo (Institute of Multidisciplinary Research for Advanced Materials), J. Kim and Y. Murakami (IMRAM, Tohohu Univ.)
10:40 492 Molecular Beam Epitaxy of Lithium Niobate/Tantalate Multifunctional Materials using a Chloride Refractory Metal Chemistry W. A. Doolittle, A. Carver, W. Henderson and W. Calley (Georgia Institute of Technology)
11:20 493 Effect of Kinetics on the Morphology of Hydrogen Exfoliated Layers S. L. Hayashi (University of California, Los Angeles), R. Sandhu (Northrop Grumman) and M. Goorsky (University of California, Los Angeles)
11:40 494 Novel Pd/Ge/Cu Ohmic Contact to n-type GaAs K. Chen, C. Lee and E. Chang (National Chiao Tung University)
 
Co-Chairs: P. Chang
TimeAbs#Title and Authors
14:00 495 Enhancing Ferroelectrics using Strain M. D. Biegalski (Pennyslvania State Universty), D. Schlom, S. McKinstry, J. Haeni, Y. Li, A. Sharron, A. Rao, W. Tian, V. Vaithyanathan, V. Gopalan, L. Chen (Pennsylvania State University), K. Choi, C. Eom (University of Wisconsin-Madison), P. Irvin, J. Levy (University of Pittsburgh), Y. Chen, X. Pan (The University of Michigan), W. Chang (Naval Research Laboratory), J. Schubert (Forschungszentrum Jülich GmbH), M. Hawley (Los Alamos National Laboratory), A. Tagantsev, V. Sherman (Ecole Polytechnique Fédérale de Lausanne), R. Uecker and P. Reiche (Institute for Crystal Growth, Berlin, Germany)
14:40 496 Effect of Electrolyte Concentration on Anodic Porous Layer Growth for n-InP in KOH D. N. Buckley, R. Lynch and C. O'Dwyer (University of Limerick)
15:00 497 Preparation of Bismuth Telluride Compound Semiconductors through Thin Film Reactions C. Liao (National Tsing Hua University), D. She, B. Liao and S. Kuo (National Tsing-Hua University)
 

Wide Bandgap Devices and Technology II

Co-Chairs: L. Chou
TimeAbs#Title and Authors
15:40 498 Fabrication processing of ZnO-based LEDs J. Chen, Y. Li, S. Jang, T. Anderson, R. Fan, H. Kim, B. Gila, D. Norton and S. Pearton (University of Florida)
16:00 499 Thermally Stable Boride Ohmic Contacts on n-ZnO J. Wright (The University of Florida)
16:20 500 Effect of Surface Grooved Visible Light Active Carbon Modified (CM)-n-TiO2 Thin Film Electrodes on Photosplitting of Water S. U. Khan and Y. Shaban (Duquesne University)
16:40 501 ZnO Light-Emitting Diodes Simulation S. Jang, J. Chen, F. Ren, S. Han, D. Norton and S. Pearton (University of Florida)
17:00 502 Fabrication of Carbon Modified Visible Light Active n-TiO2 Thin Films by Wet Process For Photoelectrochemical Water Splitting S. U. Khan, C. Xu and S. U. Khan (Duquesne University)
 

Exhibit Hall, Concourse Level

Tuesday Evening Poster Session

Co-Chairs:
TimeAbs#Title and Authors
o 503 Comparison of ZnO Dry Etching in High Density Inductively Coupled CH4/H2 and C2H6/H2-based Chemistries W. Lim, S. Pearton, L. Voss, R. Khanna (University of Florida), J. Wright (The University of Florida), B. Gila, D. Norton and F. Ren (University of Florida)
o 504 Enhancement of LED Light-Extraction Efficiency by Anodic Oxidation C. Wang, W. Lu, M. Houng, T. Yen, Y. Wang (National Cheng Kung University), C. Liu (Nan Jeon Institute of Technology) and C. Chu (Epitech Technology Corporation)
o 505 Investigation of InP/InGaAs pnp Heterostructure-emitter Bipolar Transistor J. Tsai, Y. Kang, I. Hsu and T. Weng (National Kaohsiung Normal University)
o 506 Optical Gain Tuning performance of Three-Terminal Dual-Emitter Phototransistors W. Lour, W. Chen (National Taiwan Ocean University), H. Chen (National University of Kaohsiung), M. Hsu, S. Chiu and Y. Chang (National Taiwan Ocean University)