211th ECS Meeting - Chicago, Illinois

May 06 - May 10, 2007

PROGRAM INFORMATION
 

E2 - Processes at the Semiconductor Solution Interface 2

Electronics and Photonics
 

Tuesday, May 8, 2007

Boulevard B, 2nd Floor

Co-Chairs: Colm O'Dwyer and Arnaud Etcheberry
TimeAbs#Title and Authors
09:00 610 Understanding and Controlling Pore Etching in Semiconductors H. Foell, J. Carstensen, E. Foca and M. Leisner (Christian-Albrechts-University of Kiel)
09:30 611 Electrochemical and Photo-Electrochemical Properties of Porous n-InP Layers L. Santinacci (University of Versailles - CNRS), A. Goncalves (Versailles University) and A. Etcheberry (Institut Lavoisier UMR CNRS 8180)
09:50 612 In-situ Observation of Photo Controlled Electrochemical Etching of n-InP R. P. Lynch (University of Limerick, Ireland), M. Dornhege (Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany), H. Rotermund (Dalhousie University, Halifax, Nova Scotia, Canada) and D. N. Buckley (University of Limerick)
10:10 Intermission (20 Minutes)
10:30 613 Controlling Macropores Etching in n-Si by means of In-Situ FFT Voltage and Photo Impedance Spectroscopy E. Foca, J. Carstensen, G. Popkirov and H. Foell (Christian-Albrechts-University of Kiel)
10:50 614 Directions of Pore Propagation and Porous Domain Shape in n-InP Anodized in KOH C. O' Dwyer (Tyndall National Institute, University College Cork, Ireland), R. P. Lynch (University of Limerick, Ireland), D. Sutton (Limerick Institute of Technology), S. Newcomb (Glebe Laboratories) and D. N. Buckley (University of Limerick)
11:10 615 Smoothening the Pore Walls in Macroporous Silicon E. Foca, E. Ossei-Wusu, J. Carstensen, O. Riemenschneider and H. Foell (Christian-Albrechts-University of Kiel)
11:30 616 Etching of Germanium in Hydrogenperoxide Solutions I. M. Huygens, W. Gomes and K. Strubbe (Ghent University)
 
Co-Chairs: Patrik Schmuki and Nathalie Simon
TimeAbs#Title and Authors
14:00 617 Electrochemical Deposition and Characterization of ZnO Nanowire Arrays with Tailored Dimensions C. Levy-Clement (CNRS), J. Elias, R. Tena-Zaera (Institut de Chimie et matériaux de Paris-Est, CNRS, France), I. Mora-Sero, Y. Luo and J. Bisquert (Universitat Jaume I, Castello, Spain)
14:30 618 Growth by Electrochemistry of Zinc Oxide Films with Controlled (nano)Structure and Properties T. Pauporte (ENSCP) and D. Lincot (IRDEP)
15:00 619 Electrophoretic Deposition of Template-Free ZnO Nanorod Films Y. Hara (University of Wisconsin-Madison), J. R. Brownson (University of Wisconsin) and M. A. Anderson (University of Wisconsin-Madison)
15:20 Intermission (20 Minutes)
15:40 620 Tailoring the Electronic Properties of the TiO2 Nanotube/Electrolyte Interface P. Schmuki (University of Erlangen-Nuremberg)
16:10 621 Micro Patterning of Silicon by Chemical Etching Using Patterned Noble Metal as Catalyst S. Ono, F. Arai and H. Asoh (Kogakuin University)
16:40 622 Electrodeposition of Compound Semiconductor Superlattices using ALD J. Stickney, D. Banga and V. Venkatasamy (The University of Georgia)
17:00 623 Electrochemical Fabrication and Modification Processes for Arrayed Microstructures on Si Wafer Surfaces T. Homma (Waseda University)
17:30 624 Preparation and Surface Analytic Characterization of Step Bunched Si (111) K. Skorupska, K. Skorupska (Hahn-Meitner-Institut), F. Streicher (Hahn-Meitner-Institut, Berlin, Gemany), M. Aggour (Ibn Tofail University, BP. 133, 14 000 Kenitra, Morocco), S. Sadewasser, M. Kanis (Hahn-Meitner-Institut, Berlin, Gemany) and X. Baohui (Jilin University, Changchun, China)
 

Southwest Hall, Lower Level

Tuesday Evening Poster Session

Co-Chairs:
TimeAbs#Title and Authors
o 625 Synthesis and Characterization of Cu2ZnSnS4 as a Low-Cost, Non-Toxic Absorber Material for Thin-Film Solar Cells J. J. Scragg and P. Dale (University of Bath)
o 626 FFT Photo Impedance Characterization of Semiconductors for Solar Application S. Keipert, J. Carstensen and H. Foell (Christian-Albrechts-University of Kiel)
o 627 Impact of the Alcohols Containing Electrolytes on the Macropores Etching in n-Si E. Foca, J. Carstensen, O. Riemenschneider, M. Leisner and H. Foell (Christian-Albrechts-University of Kiel)
o 628 Electrochromic WO3-x Films with Reduced Lattice Deformation Stress and Fast Response Time M. Hepel and H. Redmond (SUNY Potsdam)
 

Wednesday, May 9, 2007

Boulevard B, 2nd Floor

Co-Chairs: J. J. Kelly and A. Etcheberry
TimeAbs#Title and Authors
09:00 629 Growth and Formation of Thin Anodic Films on InP N. Simon (Versailles University) and A. Etcheberry (Institut Lavoisier UMR CNRS 8180)
09:30 630 A Relevant Anodic Passivation of n- and p-InP Surface in Liquid Ammonia: First Evidence of Stable Phosphorus-Nitrogen Bonds A. Goncalves, O. Seitz, A. Eb, C. Mathieu, M. Herlem (Versailles University) and A. Etcheberry (Institut Lavoisier UMR CNRS 8180)
10:00 631 The Role of the Surface Chemistry on the Evolution of Kinetic of Hole Injection by Fe(CN)6 3- at n- InP A. Etcheberry (Institut Lavoisier UMR CNRS 8180), N. Simon (Versailles University) and I. Gérard (Institut Lavoisier UMR CNRS 8180)
10:20 Intermission (20 Minutes)
10:40 632 Quantitative Infrared Investigation of the Acido-Basic Equilibrium at a Carboxy-Terminated Silicon Surface F. Ozanam, D. Aureau, A. Gouget-Laemmel, C. Henry de Villeneuve, A. Moraillon (Ecole Polytechnique, CNRS), P. Allongue (CNRS-Ecole Polytechnique, Laboratoire de Physique de la Matière Condensée) and J. Chazalviel (CNRS-Ecole Polytechnique)
11:10 633 In-situ IR Spectroscopy to Study Anodic Oxidation of Silicon in KOH Solution H. Philipsen (University of Utrecht), J. Chazalviel (CNRS-Ecole Polytechnique) and P. Allongue (CNRS-Ecole Polytechnique, Laboratoire de Physique de la Matière Condensée)
11:30 634 Mechanism of the Initial Oxidation of Hydrogen and Halogen Terminated Ge(111) and Ge(100) Surfaces S. Sun (Stanford University), Y. Sun, Z. Liu and P. Pianetta (Stanford Synchrotron Radiation Laboratory)
11:50 635 Passivation of Si(100) Surface by S from a Solution and its Effect on Schottky Barrier Height M. Y. Ali and M. Tao (University of Texas At Arlington)
 
Co-Chairs: Claude Levy-Clement and Pawel Kulesza
TimeAbs#Title and Authors
14:00 636 Wet Chemical Etching of Wide Bandgap Semiconductors- GaN, ZnO and SiC S. Pearton (University of Florida), W. Lim (univ.florida), F. Ren and D. Norton (University of Florida)
14:30 637 Photoelectrochemistry and Etching of SiC: a Comparison with Si D. van Dorp (CMI) and J. Weyher (Institute for Molecules and Materials)
15:00 638 Photo-Dynamics of AlxGa1-xAs Heterostructure Dissolution E. Yi and M. Parker (Rutgers, The State University of New Jersey)
15:20 Intermission (20 Minutes)
15:40 639 Deposition and Characterization of Copper Chalcopyrite Based Solar Cells using Electrochemical Techniques P. Dale, A. Samantilleke (University of Bath), G. Zoppi, I. Forbes (Northumbria University), S. Roncallo (Cranfield University) and L. Peter (University of Bath)
16:00 640 Blinking Mechanism of Colloidal Semiconductor Quantum Dots: Role of Fluctuating Double Layer Potential M. A. Stroscio, M. Dutta (Univ. of IL at Chicago), T. Yamanaka, S. Liao (University of Illinois at Chicago) and M. Vasudev (Univ. of IL at Chicago)
16:20 641 Characterization and Modeling of Dye-Sensitized Solar Cells L. Peter (University of Bath)
16:50 Introductory Remarks (10 Minutes)
17:00 642 Screening Semiconductor Photocatalysts by Scanning Electrochemical Microscopy A. J. Bard and J. Lee (The University of Texas at Austin)
 

Thursday, May 10, 2007

Boulevard B, 2nd Floor

Co-Chairs: Laurie Peter and Daniel Lincot
TimeAbs#Title and Authors
09:10 643 Electrochemical Deposition of Copper onto Silicon C. P. daRosa, E. Iglesia and R. Maboudian (University of California, Berkeley)
09:30 644 Challenging the Electrodeposition of Multinary Semiconductor Compounds: Case of CuInSe2 E. Chassaing, O. Ramdani, P. Grand (IRDEP), B. Canava (Institut Lavoisier), A. Etcheberry (Institut Lavoisier UMR CNRS 8180), J. Guillemoles and D. Lincot (IRDEP)
09:50 645 Influence of the Thiolate/Disulfide Redox Couple on the Flatband Potential of n-Type CuInS2 Electrodes B. Marsan (Université du Québec à Montréal), F. Courtel (INRS-EMT/UQAM), R. Imbeault, A. Hammami and M. Morin (Université du Québec à Montréal)
10:10 Intermission (20 Minutes)
10:30 646 Large-Scale Fabrication of Nanowire and Nanoring Arrays Based on Interference Lithography and Electrodeposition R. Ji (Max-Planck-Institute of Microstructure Physics), W. Lee (Max-Planck-Institute), R. Scholz, K. Nielsch and U. Gösele (Max-Planck-Institute of Microstructure Physics)
11:00 647 Chemistry of delta-SnS: New Tin Monosulfide Polymorph Thin Films from Galvanostatic Electrodeposition J. R. Brownson (University of Wisconsin), C. Georges (Institut de Chimie et Matériaux de Paris-Est, CNRS, UMR 7182) and C. Levy-Clement (CNRS)
11:20 648 FFT Impedance Spectroscopy Analysis of the Growth of Anodic Oxides on Si with Various Electrolytes M. Leisner, J. Carstensen and H. Foell (Christian-Albrechts-University of Kiel)
11:40 649 Photo-Induced "Stick-Slip" on Super-Hydrophilic Semiconductor Surfaces K. R. Denison (Oxley Developments Company Ltd) and C. Boxall (University of Central Lancashire)
12:00 650 Evaluation of Etch Behavior of Doped Silicon in Wet Cleaning of Silicon Wafer D. Sinha (Sumco USA)