211th ECS Meeting - Chicago, Illinois

May 06 - May 10, 2007

PROGRAM INFORMATION
 

E3 - Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics 9

Dielectric Science and Technology
 

Monday, May 7, 2007

Continental A, Lobby Level

Interface Characterization

Co-Chairs: R. E. Sah and M. J. Deen
TimeAbs#Title and Authors
10:30 Introductory Remarks (10 Minutes)
10:40 651 Further Advances in the Electrical Charaterisation of Silicon-Insulator Interface Traps using Charge Pumping D. Bauza (IMEP (INP Grenoble, UJF, CNRS)) and O. Ghobar (IMEP)
11:20 652 Transfer of a Positive Fixed Charge between Si and SiO2 in a Si/SiO2 Interface with Hydrogen Migration J. Ushio (National Institute for Materials Science) and T. Maruizumi (Musashi Institute of Technology)
12:00 653 Optimizing the Interface of Spin-on Oxide and the Active Area of Transistor in Sub70nm DRAM Structures For Better Electrical Performance A. Das, H. Sperlich and H. Heidemeyer (Qimonda Dresden)
 

Emerging Dielectrics I

Co-Chairs: B. Kaczer and Y. Kamakura
TimeAbs#Title and Authors
14:00 654 MOSCAP's and MOSFET's on III-V Channel Materials with Si, Ge and SiGe Interface Passivation Layer J. Lee (The University of Texas at Austin)
14:40 655 Interface Engineering by PVD-Based In-Situ Fabrication Method for Advanced Metal/High-k Gate Stacks H. Watanabe, S. Horie, H. Arimura (Osaka University), N. Kitano, T. Minami, M. Kosuda (Canon ANELVA), T. Shimura and K. Yasutake (Osaka University)
15:20 656 SrTiO3 Thin Film Growth by Atomic Layer Deposition Using Ti(O-iPr)2(thd)2, Sr(thd)2, and H2O S. Lee, J. Han and C. Hwang (Seoul National University)
15:40 Intermission (20 Minutes)
16:00 657 Rare-Earth Metal Oxides and their Silicates/Aluminates as Future Gate Dielectric Films A. Sakai, M. Sakashita, M. Ogawa and S. Zaima (Nagoya University)
16:40 658 Resistance Switching Characteristics of Metal Oxides for Nonvolatile Memory Applications H. Hwang (Gwangju Institute of Science and Technology (GIST))
17:20 659 Dielectric and Electrode Thin Films for Stack-Cell Structured DRAM Capacitors with sub 50-nm Design Rules C. Hwang, S. Kim, S. Lee, M. Seo, J. Hahn and S. Lee (Seoul National University)
 

Tuesday, May 8, 2007

Continental A, Lobby Level

Ultra-Thin Film/Reliability

Co-Chairs: K. L. Pey and J. F. Zhang
TimeAbs#Title and Authors
08:00 660 Polysilicon Interface Engineering for Improved PIP Capacitors J. M. Towner, J. Naughton and J. Prasad (AMI Semiconductor)
08:20 661 The Physical Origins of Fast and Slow Components in NBTI Degradation for p-MOS Transistors with SiON Gate Dielectric M. Li (Fudan University)
09:00 662 Bias Temperature Instability Characterization of Advanced Gate Stacks S. Fujieda, M. Terai, M. Saitoh, A. Toda (NEC Corporation), Y. Miura, Z. Liu (NEC Electronics), Y. Teraoka, A. Yoshigoe (Japan Atomic Energy Agency), M. Wilde and K. Fukutani (University of Tokyo)
09:40 Intermission (20 Minutes)
10:00 663 Mechanism of Static and Dynamic Bias Temperature Instability in p- and n-MOSFETs A. Nakajima and S. Zhu (Hiroshima University)
10:40 664 NBTI Mechanism Based on Hole-Injection for Accurate Lifetime Prediction A. Teramoto, R. Kuroda and T. Ohmi (Tohoku University)
11:20 665 Contribution of as-grown Hole Traps to NBTI M. H. Chang, Y. Wang, J. F. Zhang, C. Zhao, W. Zhang (Liverpool John Moores University) and M. Xu (Peking University)
 

Ultra-Thin Film/Reliability Cont.

Co-Chairs: A. Teramoto and M. J. Deen
TimeAbs#Title and Authors
14:00 666 Toward Understanding the Wide Distribution of Time Scales in Negative Bias Temperature Instability B. Kaczer (IMEC), T. Grasser (TU Wien), R. Fernandez (UA Barcelona) and G. Groeseneken (IMEC)
14:40 667 Modeling and Characterization of Negative Bias Temperature Instability in p-Channel MOSFETs T. Chen (NTU), J. Yang (Nanyang Technological University), S. Tan, C. Ng and L. Chan (Chartered Semiconductor Manufacturing Ltd)
15:20 668 An Assessment of Mobility Variation during Negative Bias Temperature Stress J. F. Zhang and M. H. Chang (Liverpool John Moores University)
15:40 Intermission (20 Minutes)
16:00 669 Dramatic Improvement of Vfb Shift and Gmmax with Ultra-thin and Ultra-low-leakage SiN-based SiON Gate Dielectrics K. Muraoka, D. Matsushita, Y. Nakasaki, K. Kato, S. Kikuchi, K. Sakuma, Y. Mitani, K. Eguchi (Toshiba Corporation) and M. Takayanagi (Toshiba America Electronic Components, Inc.)
16:40 670 Non-Uniform Distribution of Electron Traps Generated by FN Stress in Silicon Dioxides X. Zheng, W. Zhang, J. Zhang (Liverpool John Moores University) and Y. Hao (Xidian University)
17:00 671 Stress-Induced Leakage Current in Magnetic Tunnel Junctions with Thin AlOx Barrier Y. Kamakura, T. Mihara, M. Morifuji and K. Taniguchi (Osaka University)
17:20 672 Extensive Study of the Correlation between Contact Etch Stop Nitride film Properties and Negative Bias Temperature Instabilities Measured in pMOSFETS D. Benoit (STMicroelectronics), P. Morin (ST Microelectronics), F. Perrier (NXP), C. Chaton (CEA-LETI), M. Charleux, J. Regolini, K. Barla and P. Ferreira (ST Microelectronics)
17:40 673 Impact of Positive Charges on NBTI Degradation and Characterization in Ultra-Thin SiON Gate Dielectrics J. Lei and M. Xu (Institute of Microelectronics, Peking University)
 

Southwest Hall, Lower Level

Tuesday Evening Poster Session

Co-Chairs: J.F. Zhang, M.J. Deen, J. Yota, Y. Kamakura, R.E. Sah
TimeAbs#Title and Authors
o 674 Dielectric Functions of SiO2 Films Containing Silicon Nanocrystals C. Sun, D. Liang and T. Chen (NTU)
o 677 Low Temperature Plasma Re-Oxidation Process for Sub-60nm Device B. Lee, W. Sohn, J. Park, H. Park, B. Kim, G. Choi, S. Kim, U. Chung and J. Moon (Samsung Electronics Co., Ltd.)
 

Wednesday, May 9, 2007

Continental A, Lobby Level

Ultra-Thin Film/Reliability Cont.

Co-Chairs: B. Hubbard and J. Yota
TimeAbs#Title and Authors
08:00 678 CaCu3Ti4O12, a Novel Material for Capacitive Applications: Thin Film Growth and Characterization R. Lo Nigro (IMM), R. G. Toro, G. Malandrino, I. L. Fragalà (Dipartimento Scienze Chimiche Università di Catania), P. Fiorenza and V. Raineri (IMM-CNR)
08:20 679 SiN Conductivity and Capacitor Reliability G. Drandova, J. M. Beall and K. D. Decker (TriQuint Semiconductor)
09:00 680 On-Wafer Test Method of Metal-Insulator-Metal Capacitor Life using Time Dependent Dielectric Breakdown B. N. De and M. Shokrani (Anadigics)
09:40 Intermission (20 Minutes)
10:00 681 Influence of Oxide Breakdown Percolation Resistance on MOSFETs (Invited Paper) K. Pey, V. Lo (Nanyang Technological University), C. Tung (Institute of Microelectronics), W. Lim and D. Ang (Nanyang Technological University)
10:40 682 Microscopic Mechanism of Silicon Thermal Oxdation Process H. Kageshima, M. Uematsu (NTT Basic Research Laboratories, NTT Corporation), T. Akiyama and T. Ito (Mie University)
11:20 683 A New Kinetic Equation for Thermal Oxidation of Silicon Replacing the Deal-Grove Equation T. Watanabe (Waseda University)
 

Thin Film/Processing/Characterization

Co-Chairs: D. Bauza and Y. Kamakura
TimeAbs#Title and Authors
14:00 684 Plasma Etching Technology for Low-k Porous SiOCH Films M. Hori (Nagoya University)
14:40 685 CON-TACT® Planarization Process of Spin-on Dielectrics for Device Fabrication W. Shih (Brewer Science, Inc.), J. Yota (Skyworks Solutions, Inc.) and K. Itchhaporia (Brewer Science, Inc.)
15:20 686 Luminescence from Si Nanoclusters Formed in Silicon Oxide and Silicon Nitride Based Materials T. Roschuk, O. H. Zalloum, J. Wojcik and P. Mascher (McMaster University)
15:40 Intermission (20 Minutes)
16:00 687 Low Temperature Silicon Nitride Deposition by Inductively Coupled Plasma CVD for New Applications H. Kim, Y. Lee, Y. Ra (BMR Technology Corp.), G. Li (University of California, Irvine) and J. Yota (Skyworks Solutions, Inc.)
16:40 688 A Photoluminescence Study of Magnetron-Sputtered SiO2 Films Co-Doped with (Er, Ge) C. L. Heng, O. H. Zalloum, E. Chelomentsev and P. Mascher (McMaster University)
17:00 689 New Characterization Methodology of Borderless Silicon Nitride Charge Kinetic using C(V) Hysteresis Loops G. Beylier, B. Sylvie (STMicroelectronics) and G. Gerard (IMEP)
17:20 690 New Dynamic SIMS Protocol for Characterization of Ultra-thin SiON Gate Dielectric Material J. T. Mayer, T. Büyüklimanli and C. Magee (Evans Analytical Group)
17:40 691 Innovative Low damage Silicon Nitride Passivation of 100nm In0.4AlAs/In0.4GaAs Metamorphic HEMTs with Remote ICPCVD D. Kim, J. Maeng, S. Kim, J. Her, S. Yeon (Seoul National University), H. Kim (BMR Technology Corp.) and K. Seo (Seoul National University)
18:00 692 Effects of High-Temperature Porogens on Materials Properties of Novel 2-Pahse Low-k Dielectrics M. Che, J. Leu, Y. Chen, C. Huang and S. Choang (National Chiao Tung University)
 

Thursday, May 10, 2007

Continental A, Lobby Level

Emerging Dielectrics II

Co-Chairs: H. Hwang and J. F. Zhang
TimeAbs#Title and Authors
08:00 693 Three Dimensional Compositional Characterization of High-K Gate Dielectrics with LEAP Atom Probe Microscopy R. M. Ulfig, K. Thompson, R. Alvis and J. Bunton (Imago Scientific Instruments)
08:20 694 High-Mobility and Low-Vth Metal Gate CMOSFETs with Ultra-Thin HfSiON Gate Dielectrics Using TaSiN/TaSix Stacked Electrode and Selective Substrate Fluorine Implantation S. Inumiya (Toshiba Corporation), T. Matsuki, T. Aoyama and Y. Nara (Semiconductor Leading Edge Technologies, Inc.)
09:00 695 The Impact of F and N Incorporation Technique on Advanced Gate Stacks J. Yugami, T. Hayashi, Y. Nishida and M. Inoue (Renesas Technology Corp.)
09:40 Intermission (20 Minutes)
10:00 696 Electrical Characterization of Advanced Gate Dielectrics T. Ma (Yale University)
10:40 697 Accurate TDDB Lifetime Prediction of High-k Stacked Gate Dielectrics with Regarding High Density Initial Traps K. Okada (MIRAI-ASET), H. Ota (MIRAI-ASRC-AIST), T. Nabatame (MIRAI-ASET) and A. Toriumi (University of Tokyo)
11:20 698 Identifying Contributions to Electrical Instability in High-k Gate Stacks: As-Grown vs. Generated Defects G. Bersuker, P. Lysaght and R. Choi (SEMATECH)
 

Emerging Dielectrics III

Co-Chairs: T. P. Ma and J. Yota
TimeAbs#Title and Authors
14:00 699 Aqueous-Base-Developable Benzocyclobutene-Based Dielectric Material - An Emerging Dielectric Material for Microelectronics Y. So (The Dow Chemical Company), E. Stark, S. Kisting, D. Scheck, K. Baranek (Dow Chemical), M. Toepper and T. Baumgartner (IZM)
14:40 700 New Polyimides Coating Technology for Next Generation Semiconductor Application K. Katoh, M. Ohe, H. Komatsu, T. Motobe (Yamazaki R&D Center), T. Hattori and T. Ueno (Electronic Materials R&D Center)
15:20 Intermission (20 Minutes)
15:40 701 Curing Dielectric Layers for Microelectronics with Microwaves: Chemistry, Mechanisms, and Applications R. L. Hubbard (Lambda Technologies, Inc.)
16:20 702 Investigation of Scaling Limits for PECVD SiN and ALD HfO2/Al2O3 Integrated MIM Capacitors D. Dornisch, G. Li, K. M. Ring, D. J. Howard (Jazz Semiconductor) and G. Wilk (ASM America)
17:00 703 Morphology and Composition of Praseodymium Based High-k Materials and Their Relevance to Dielectric Properties of Thin-Films G. Lippert, J. Dabrowski, I. Costina, G. Lupina, C. Wenger, P. Zaumseil and H. Muessig (IHP)
17:40 704 Radiation Induced Charge Loss Mechanisms Across the Dielectrics of Floating Gate Flash Memories A. Paccagnella, G. Cellere and A. Cester (University of Padova)
18:20 Session Concluding Remarks (10 Minutes)