211th ECS Meeting - Chicago, Illinois

May 06 - May 10, 2007

PROGRAM INFORMATION
 

E5 - State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 46)

Electronics and Photonics
 

Monday, May 7, 2007

Boulevard A, 2nd Floor

High-Speed Device Applications

Co-Chairs: Mark Overberg, MasahiroYoshimoto
TimeAbs#Title and Authors
10:30 759 Quantum Well Transistor Laser M. Feng, N. Holonyak and G. Walter (University of Illinois)
11:00 760 Dislocation-Free Growth of III-V-N Alloys on Si and its Application to Monolithic OEICs H. Yonezu, Y. Furukawa and A. Wakahara (Toyohashi University of Technology)
11:30 761 Improved Manufacturability of AlGaAs/GaAs Pnp Heterojunction Bipolar Transistors J. B. Clevenger, G. Patrizi, T. Peterson, M. Cich, A. Baca, J. Klem, T. Plut (Sandia National Laboratories), T. Fortune (The Plus Group), M. Hightower (ASAP, Inc.), D. Torres (L&M Technologies), S. Hawkins and C. Sullivan (Sandia National Laboratories)
12:00 762 High Performance W-Band Wafer-Scale Assembly for III-V Semiconductor MMICs X. Zeng, P. Chang-Chien and R. Tsai (NGST)
 

Compound Semiconductor Growth and Process Technology

Co-Chairs: Hao Ouyang, Hiroo Yonezu
TimeAbs#Title and Authors
14:00 763 High Quality InAs Quantum Dots with an In(Ga,Al)AsSb Strain-Reducing Layer for Long Wavelength Photonic Devices J. Chyi (National Central University)
14:30 764 High Tc InMnAs Ferromagnetic Semiconductors and the Role of Disorder B. W. Wessels, S. May and P. Chiu (Northwestern University)
15:00 765 The Anomalous Electrical Performance of Bonded n-GaAs Wafers H. Ouyang, H. Chiou, C. Liu (National Chung Hsing University), J. Cheng and Y. Wu (National Chiao Tung University)
15:20 766 Annealing Effects of Diluted GaAs Nitride and Bismide on Photoluminescence M. Yoshimoto, G. Feng and K. Oe (Kyoto Inst Tech)
15:40 Intermission (20 Minutes)
16:00 767 Study on ICP Dry Etching Technology for Nanostructure Photonic Device Fabrication C. Sun, J. Wang, Z. Hao, B. Xiong and Y. Luo (Dept. of Electronic Engineering, Tsinghua University)
16:30 768 Comparison of E-beam and Sputter-Deposited ITO Films for 1.55 um Metal-Semiconductor-Metal Photo-Detector Applications F. Ren, S. Jang and B. Kang (University of Florida)
16:50 769 MBE Growth and Characterization of Ga2O3 and (InGa)2O3 Films for Ultraviolet Applications S. Fujita and T. Oshima (Kyoto University)
17:10 770 Polycrystalline Silicon Carbide Film Depositon Using Monomethylsilane and Hydrogen Chloride Gases H. Habuka (Yokohama National University), M. Watanabe, M. Nishida and T. Sekiguchi (Yokohama National Univrsity)
17:30 771 Solar Cell Assisted Photocleavage of Water Using Carbon Modified (CM)-n-TiO2 S. Khan, C. Xu, Y. A. Shaban (Duquesne University), W. B. Ingler Jr (University of Toledo) and M. Alam (INNOSENSE LLC)
17:50 772 Visible Light Active Carbon Modified (CM)-p-WO3 Thin Film Electrode for Photosplitting of Water S. Khan and Y. A. Shaban (Duquesne University)
 

Tuesday, May 8, 2007

Boulevard A, 2nd Floor

Wide Bandgap Semiconductor Nanostructures and Applications

Co-Chairs: Li-Jen Chou, Steve Pearton
TimeAbs#Title and Authors
08:30 773 ZnO Nanostructures and Device Applications L. Chen (National Tsing Hua University)
09:00 774 Growths of Semiconductor Compound Nanotubes J. Hu, Y. Bando, J. Zhan and D. Golberg (National Institute for Materials Science)
09:30 775 Wide Bandgap Semiconductor Nanowires for Sensing Applications S. Pearton, D. Norton, F. Ren, L. Tien, B. Kang (University of Florida) and G. Chi (Natioanl Central University)
09:50 776 Low Temperature (< 100{degree sign}C) Patterned Growth of ZnO Nanorod Arrays on Si B. Kang, S. Pearton and F. Ren (University of Florida)
10:10 Intermission (20 Minutes)
10:30 777 Optical Properties of Zinc Oxide Photonic Crystals R. P. Chang (Northwestern University)
11:00 778 Enhanced Carrier Transportation on Passivated Gallium Nitride Single Nanowire Field-Effect Transistor J. Yu, H. Wu and L. Peng (National Taiwan University)
11:20 779 Heteroepitaxy of One Dimensional (1-D) Ga2O3-GaN Core-Shell Nanorods H. Chin-Hua and L. Chou (National Tsing Hua University)
11:40 780 Optoelectronic Properties for ZnO and Related Semiconductors in Various Nanoscale Geometries M. Dutta, M. A. Stroscio (Univ. of IL at Chicago), J. Yang, T. Yamanaka (University of Illinois at Chicago), Y. Li, K. Sun and M. Vasudev (Univ. of IL at Chicago)
 

GaN and Wide Bandgap Materials

Co-Chairs: Daniel Koleske, Ching-Ting Lee
TimeAbs#Title and Authors
14:00 781 Investigations of Group III Nitride Deposition for Solid State Lighting Applications D. D. Koleske, S. Lee, M. Crawford, R. Creighton, A. Fischer, G. Thaler and M. Coltrin (Sandia National Laboratories)
14:30 782 High Performance GaN-based Hydrogen Sensors W. C. Hsu (Institute of Microelectronics) and J. Huang (Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University)
15:00 783 Fabrication and Characterization of InGaN-Based Green Resonant Cavity Light-Emitting Diodes by Using H+ Ion-Implantation R. Horng, S. Huang and D. Wuu (National Chung Hsing University)
15:20 784 Electrical Performance and Thermal Stability of Nitride-based Contacts to n- and p-type GaN L. F. Voss, L. Stafford, J. Wright, S. Pearton and F. Ren (University of Florida)
15:40 Intermission (20 Minutes)
16:00 785 Investigation of MOS Diodes with AlGaN Oxide Film Grown by Photoelectrochemistry Oxidation Method C. Lee and L. Huang (National Cheng Kung University)
16:30 786 Progresses of the Na Flux Method as a New Technology for the Growth of Large GaN Single Crystals F. Kawamura, M. Tanpo, M. Imade, M. Yoshimura, Y. Kitaoka, Y. Mori and T. Sasaki (Osaka university)
16:50 787 Improved Luminance Intensity of InGaN-GaN Light-Emitting Diode by Roughening both p-GaN and Undoped-GaN Surfaces and Applying a Mirror to the Sapphire Substrate Surface Y. S. Wu and C. Liao (National Chiao-Tung Univ.)
17:20 788 InN/InAlN Multiple Quantum well Nanocolumns Grown on (111) Si Substrates by rf-plasma Assisted Molecular Beam Epitaxy K. Kishino, J. Kamimura and A. Kikuchi (Sophia University)
 

Southwest Hall, Lower Level

poster section

Co-Chairs: Li-Jen Chou
TimeAbs#Title and Authors
o 789 Mechanism of Interlayer Dielectric Penetration Caused by Al Interconnection and Preventive Measures S. Tanimoto (FED), H. Oohaishi and K. Arai (AIST)
o 790 Effects of RTA-treated ZnO/Quartz Thin Films on the Structural and Optical Properties S. Hu (Tung Fang Institute of Technology), Y. Lee (Tung Nan Institute of Tech.), W. Water (National Formosa University), J. Huang, J. Lee (Tung Nan Institute of Tech.), J. Shen (Chung Yuan Christian University) and S. Tan (Ching Yun University)
o 791 Comparison of Optical Characteristics of Three-Terminal Dual-Emitter Phototransistor and Three-Terminal Heterojunction Phototransistor W. Chen (National Taiwan Ocean University), H. Chen (National University of Kaohsiung), M. Hsu, S. Chiu and W. S. Lour (National Taiwan Ocean University)
o 792 Low Temperature GaN Epitaxy Using Ga(mDTC)3 Precursor C. Park, D. Kim, D. Yoon, W. Jung, H. Joo and F. Umme (Yeungnam university)
o 793 Progress Toward the Preparation of Large, Persistent Acenes With Five to Nine Rings G. P. Miller and I. Kaur (University of New Hampshire)
o 794 High Density Inductively Coupled Plasma Etching of Zinc-Oxide(ZnO) and Indium-Zinc Oxide(IZO) W. Lim, L. Stafford (University of Florida), B. Gila (University of Florida, Materials Science and Engineering), D. Norton, S. Pearton, F. Ren (University of Florida), J. Song, J. Park, Y. Heo, J. Lee and J. Kim (Kyungpook National University)
o 795 Characteristics of a Four-Terminal Dual-Emitter Heterojunction Phototransistor with a Base Current Bias W. Chen (National Taiwan Ocean University), H. Chen (National University of Kaohsiung), M. Hsu, S. Chiu and W. S. Lour (National Taiwan Ocean University)
o 796 Influence of Sinking-Gate on Al0.24Ga0.76As/InGaAs Double Heterojunction High Electron Mobility Transistors M. Hsu (National Taiwan Ocean University), H. Chen (National University of Kaohsiung), W. Chen, S. Chiu and W. S. Lour (National Taiwan Ocean University)
o 797 Au Nanoparticles-attached Si Nanowires as Nonvolatile Memory Devices M. Lu (National Tsing Hua University), P. Yeh (Department of Materials Science and Engineering, National Tsing Hua University), M. Lu (National Nano Device Laboratories, Hsin-Chu, Taiwan), C. Huang (Department of Materials Science and Engineering, National Tsing Hua University) and L. Chen (National Tsing Hua University)
o 798 Influence of Base Passivation on the Optical Performance of Dual-Emitter Heterojunction Phototransistors S. Tan (Ching-Yun University), W. Chen (National Taiwan Ocean University), H. Chen (National University of Kaohsiung), M. Hsu, S. Chiu and W. S. Lour (National Taiwan Ocean University)
 

Wednesday, May 9, 2007

Boulevard A, 2nd Floor

GaN and Wide Bandgap Materials

Co-Chairs: YewChung Wu, Vincent Gambin
TimeAbs#Title and Authors
09:00 799 GaN MEMS by MOCVD Growth of GaN on Patterned Si Substrates and Wet Etching K. M. Lau, Z. Yang, B. Zhang and K. Chen (Hong Kong University of Science and Technology)
09:30 800 Reliability of AlGaN/AlN/GaN HEMTs V. Gambin, R. Coffie, Y. Chen, I. Smorchkova, M. Wojtowicz, Y. Chou, B. Heying and A. Oki (Northrop Grumman Corporation)
10:00 801 Thermally Stable Novel Metal Contacts on Bulk, Single-Crystal n-type ZnO J. Wright, R. Khanna, L. F. Voss, L. Stafford (University of Florida), B. Gila (University of Florida, Materials Science and Engineering), D. Norton, S. Pearton, F. Ren and I. I. Kravchenko (University of Florida)
10:20 Intermission (20 Minutes)
10:40 802 Effects of Laser Sources on the Reverse-Bias Leakages of Laser Lift-Off GaN-Based LEDs Y. S. Wu, J. Cheng (National Chiao-Tung Univ.) and H. Ouyanga (National Chung Hsing University)
11:00 803 Robust Detection of Hydrogen Using Differential AlGaN/GaN High Electron Mobility Transistor Sensing Diodes H. Wang (University of Florida), T. Anderson (University of Florida, Chemical Engineering), F. Ren (University of Florida), C. Li, Z. Low, J. Lin (University of Florida, Electrical and Computer Engineering), B. Gila (University of Florida, Materials Science and Engineering), S. Pearton (University of Florida), A. Dabiran and A. Osinsky (SVT Associates)
11:20 804 Electronic Properties of Organic-inorganic Hybrid Systems M. Dutta, M. A. Stroscio, Y. Li, K. Sun and M. Vasudev (Univ. of IL at Chicago)