211th ECS Meeting - Chicago, Illinois

May 06 - May 10, 2007

PROGRAM INFORMATION
 

E6 - Thin Film Materials, Processes, and Reliability

Dielectric Science and Technology
 

Monday, May 7, 2007

PDR 2, 3rd Floor

Low-k Films

Co-Chairs: G.S. Mathad and H. Rathore
TimeAbs#Title and Authors
10:40 805 Porous ULK using a PECVD Template Approach: Impact of Matrix Structure and Porogen Loading L. Favennec (STMicroelectronics), V. Jousseaume (CEA), O. Gourhant (STMicroelectronics), A. Zenasni (CEA) and G. Passemard (STMicroelectronics)
11:00 806 Surface Modification and Pore Sealing in a Liquid Phase of Porous SiOCH Thin Films K. Sidi Ali Cherif (NXP Semicondutors / CEA), S. Kordic (NXP Semiconductors), J. Farkas (Freescale Semiconductor) and S. Szunerits (Laboratoire d'Electrochimie et de Physicochimie des Matériaux et des Interfaces)
11:20 807 Advanced Metrology for Porous Low-K Integration into Cu back-end Processes P. A. Ryan, R. Bytheway, G. Gibson (Bede Scientific Instruments Ltd) and K. Koga (Consortium for Advanced Semiconductor Materials and Related Technologies (CASMAT))
11:40 808 Enhanced Cracking Resistance of Plasma Deposited Low k SiCOH Films with Nano Imbedded Layers Insertion S. V. Nguyen, E. Liniger (IBM T J Watson Yorktown Research Center), K. Ida (Sony Electronics Inc.), B. Herbst (IBM T J Watson Yorktown Research Center), K. Malone, N. Klymko (IBM Advance Semiconductor R&D Centers), S. Cohen, E. Simonyi (IBM T J Watson Yorktown Research Center), S. Lane, C. Dziobkowski (IBM Advance Semiconductor R&D Centers), A. Grill (IBM T J Watson Yorktown Research Center), D. Restaino (IBM Advance Semiconductor R&D Centers), S. Gates, D. Edelstein, T. Nogami (IBM T J Watson Yorktown Research Center) and T. Ivers (IBM Advance Semiconductor R&D Centers)
 

Gate Dielectric and Barrier Films

TimeAbs#Title and Authors
14:00 809 Effects of TiCl4-Based PECVD-Ti/CVD-TiN Barrier Layers on the BF2-Doped Si for Contact Plug Technology T. Huang, W. Liang, K. Su, C. Wu, Y. Lin (Nanya Technology Corporation), W. Satoshi (Tokyo Electron Limited) and J. Lin (Nanya Technology Corporation)
14:20 810 Microstructure Evolution and N Distribution in Ru-N Barrier M. Damayanti, T. Sritharan, S. Mhaisalkar (Nanyang Technological University), H. Engelmann, E. Zschech (Advanced Micro Devices) and L. Chan (Chartered Semiconductor Manufacturing Ltd)
14:40 811 Highly Conformal Ru Atomic Layer Deposition for Applications in Nanoelectronics W. Kim, S. Park and H. Kim (POSTECH)
15:00 812 Highly Thermal-Stable Amorphous TaSi2Cx Thin Films T. Lin, T. Chin, H. Cheng (National Tsing-Hua University) and J. Fang (National Formosa University)
15:20 813 Diffusion Barrier Performance of Atomic Layer Deposited Ultrathin Al2O3 and HfO2 Films for Copper Metallization P. Majumder, R. Katamreddy and C. Takoudis (University of Illinois at Chicago)
15:40 814 In-Situ Formation of Ag Capping Layer in Copper Chemical Mechanical Polishing M. Kang, J. Kim and S. Cho (Seoul National University)
16:00 815 New Dry Etching Process of the Deep Contact Composed of SiO2 and Si Layer by using the Triple Hard Mask System W. Cho, J. Seo, Y. Kang, M. Chae, S. Kwon and J. Hwang (Samsung Electronics)
16:20 816 Electrical Characteristics of HfO2-Al2O3 Dielectric Thin Films Grown by Atomic-Layer-Deposition in Metal-Insulator-Metal Capacitor Configuration M. Chien (National Tsing Hua University, Hsinchu, Taiwan, R.O.C), Y. Chiou and T. Wu (Materials Science and Engineering)
16:40 817 Effect of Direct Contact Via Process Condition for Cu Barrier Metal on Device Performance in Dual Damascene Cu Interconnects M. Lee, H. Lee, S. Kim, D. Kim, S. Joo, J. Han, K. Kim and H. Park (Dongbu Electronics Co., Ltd.)
 

Tuesday, May 8, 2007

Southwest Hall, Lower Level

Tuesday Evening Poster Session

Co-Chairs: G.S. Mathad and H. Rathore
TimeAbs#Title and Authors
o 818 Surface Treatment of Indium Tin Oxide (ITO) using Radio Frequency Atmospheric and Low Pressure Plasma for Organic Light Emitting Diodes (OLED) H. Choi and M. Jung (CHUNGNAM NATIONAL UNIVERSITY)
o 819 Spray Pyrolysed CdTe Films and their Characteristics K. R. Murali (CECRI) and T. Elango (Annamalai POlytechnic)
o 820 LEGO Process for Mixed Power Applications: Fabrication at Low Cost of Localized Thick SOI Layers J. R. Dilhac (LAAS-CNRS), I. Bertrand (SOITEC), J. Dilhac (LAAS-CNRS), P. Renaud (Freescale Semiconductors), M. Bafleur and C. Ganibal (LAAS-CNRS)
o 821 On the Surface Processes in Electrochromism of Nb2O5 Anode Oxide Films under Pulse Electrochemical Polarization L. Skatkov (PCB), V. Gomozov, I. Stepanova (National Technical University) and I. Roy (National Pharmaceutical Academy)
o 822 The Application of Synthetic Thin Film Diamond Electrodes in Water Electrolysis for Hydrogen Production and Wastewater Treatment J. Jiang, M. Chang, P. Pan and M. Cui (Tianjin Univ of Technology)
o 823 Electrical Properties of NILC Poly-Si Films Using a Gettering Substrate Y. S. Wu, C. Hu and C. Lin (National Chiao-Tung Univ.)
o 824 Improved Electrical Characteristics of MILC Poly-Si TFTs Using Fluorine Ion Implanation Y. S. Wu and C. Chih-Pang Chang (National Chiao-Tung Univ.)
o 825 Iron Assisted Gettering of Nickel within the Ni-Metal-Induced Crystallization Polycrystalline Silicon Film Y. S. Wu and B. Lin (National Chiao-Tung Univ.)
o 826 Influence of Corrosion Properties on Electrochemical Migration of Sn, SnAg, SnAgCu Solder Alloys Y. Yoo, H. Nam, Y. Kim (Andong National University), S. Lee (Seoul National University), J. Jung, Y. Park (Andong National University) and Y. Joo (Seoul National University)
o 827 The Annealing Behavior of Cr-Ni Multilayer Electroplated from Cr(III)-Ni(II) Plating Bath C. Chen (Chang Gung University), F. Hsu (Mingchi University of Technology) and C. Huang (Chang Gung University)
o 828 Electrodeposition of p-Type Sb2Te3 Film for Thermoelectric Microdevices K. Lee, K. Lee and D. Kim (Korea Institute of Macinery & Materials)
o 829 Electrical and Reliability Improvements for Thin-Film Transistor using TEOS Gate Dielectrics with RTN2O Annealing C. H. Kao (Chang Gung University)
o 830 Properties of the Heterojunction Boron Carbide Structures: Experimental and Calculated from Semi-Empirical Models I. F. Sabirianov, M. Natta, O. Flores, K. Nelson and J. Brand (University of Nebraska)