211th ECS Meeting - Chicago, Illinois

May 06 - May 10, 2007

PROGRAM INFORMATION
 

F1 - Electrochemical Processing in ULSI and MEMS 3

Electrodeposition
 

Tuesday, May 8, 2007

PDR 2, 3rd Floor

Co-Chairs: L. Deligianni and T. Moffat
TimeAbs#Title and Authors
08:10 831 Shape Evolution during Electrodeposition with Additives R. Alkire (University of Illinois)
08:50 832 Investigation of Copper Processing in the Damascene Process by Electrochemical Impedance Analysis. C. Gabrielli, P. Moçotéguy, H. Perrot and A. Zdunek (CNRS)
09:30 Intermission (30 Minutes)
10:00 833 Superconformal Film Growth: Quantification and Mechanism T. Moffat, D. Wheeler, S. Kim and D. Josell (NIST)
10:20 834 Copper Seeding and Filling: New Strategies for the 32 nm Node P. Haumesser, A. Roule (CEA-LETI), M. Amuntencei (STMicroelectronics), E. Deronzier (CEA-LETI), X. Avale, S. Da Silva, J. Klocke, R. Baskaran (Semitool) and G. Passemard (STMicroelectronics)
10:40 835 Leveling of microvias for Wafer Level Packaging O. Luehn, J. Celis (University of Leuven), C. Van Hoof, K. Baert and W. Ruythooren (Interuniversitary Microelectronics Center)
11:00 836 Via Filling Electrodeposition bu Using Periodic-Reverse Current K. N. Kondo (Osaka Prefecture University), T. Nakamura (Osaka Perfecture University), D. Mikami (Osaka Prefecture University) and T. Okubo (Toppan Printing Company)
11:20 837 Numerical Simulation of Superfilling during Copper Electrodeposition in Small Trenches X. Li, R. Braatz (University of Illinois at Urbana-Champaign) and R. Alkire (University of Illinois)
11:40 838 Oxygen Reduction and Corrosion on Copper Substrates for Electrodeposition and In Situ AFM Imaging D. N. Buckley (University of Limerick), M. Breathnach (University of Limerick, Ireland), S. Ahmed (Univrsity of Limerick), S. Nakahara (University of Limerick, Ireland), L. Burke and R. Sharna (University College Cork)
12:00 839 Robust Through-Silicon-Via Electroplating A. L. Keigler, B. Wu, Z. Q. Liu and J. Zhang (NEXX Systems)
 
Co-Chairs: J. Dukovic and J. Stickney
TimeAbs#Title and Authors
14:00 840 All-Copper Chip-to-Substrate: Design, Fabrication, and Characterization P. Kohl (Georgia Tech), T. Osborn and A. He (Georgia Institute of Technology)
14:40 841 Liquid Cooling System for Advanced Microelectronics M. Datta, E. Lin and H. Choi (Cooligy, Inc.)
15:20 842 Superfilling of Submicrometer Trenches with Copper by Electroleess Deposition using Polyethylene Glycol as a Bath Additive M. Hasegawa, N. Yamachika, Y. Okinaka (Waseda University), Y. Shacham-Diamand (Tel Aviv University) and T. Osaka (Waseda University)
15:40 Intermission (20 Minutes)
16:00 843 Anion Effects on Cu-benzotriazole Film Formation: Implications for CMP K. L. Stewart (University of Illinois at Urbana-Champaign), S. Li (Cabot Microelectronics Corporation) and A. Gewirth (University of Illinois at Urbana-Champaign)
16:20 844 Fundamental Studies of Cu ECMP Electrolytes I. I. Suni, A. Tripathi, C. Burkhard, Y. Li (Clarkson University), A. Barajas, F. Doniat and J. McAndrew (American Air Liquide)
16:40 845 Determination of Diffusion Boundary Layers and Copper Thickness Uniformity in Plating Tools Designed for 3-D Interconnect and Packaging Applications H. McCrabb, H. Garich, L. Gebhart, E. Taylor, M. Inman (Faraday Technology, Inc.) and R. Carpio (SEMATECH-ATDF)
17:00 846 Copper Electroplating Techniques for the Interconnect Formation in Advanced Semiconductor Devices using an Inert Anode / Redox- mediator Concept R. Preisser (ATOTECH Deutschland GmbH)
17:20 847 Influence of Bath Lifetimes and Electroplating Performance K. Achuthan, Q. Wang, B. Brooks and K. Sahota (SPANSION LLC)
 

Southwest Hall, Lower Level

Tuesday Evening Poster Session

Co-Chairs: T. Moffat and J. Stickney
TimeAbs#Title and Authors
o 848 Electrochemical Planarization of Copper-Plated Wafer in Phosphoric Acid Y. Wu (MingChi University of Technology) and T. Tsai (Technology and Science Institute of Northern Taiwan)
o 849 Electrodeposition of Lanthanum in Aprotic Solvents Studied by HMDE, EQCM and XPS K. Shirasaki (Institute for Materials Research, Tohoku University), T. Yamamura (Tohoku University), T. Herai, Y. Shiokawa, I. Satoh and M. Oku (Institute for Materials Research, Tohoku University)
o 850 Parameter effects for 100 nm Thick Anodic Aluminum Oxide (AAO) Films S. Yim (San Jose State University), J. Lille, C. Bonhote and T. Wu (Hitachi GST)
o 851 Localized Gold Electrodeposition onto p-type Silicon surfaces L. Santinacci (University of Versailles - CNRS), T. Djenizian (University of Provence-CNRS), A. Etcheberry (Institut Lavoisier UMR CNRS 8180) and P. Schmuki (University of Erlangen-Nuremberg)
o 852 Inhibition of Galvanostatic Nucleation of Zinc from a Zincate Solution by Cations of the Polymeric Tetraalkylammonium Salt Y. Kryshtop, V. Trofimenko and N. Yurchenko (Dnepropetrovsk National University)
o 853 Growth Behavior of Electroless Ni-Co-P Deposits on Silicon W. Chen (National Pingtung University of Science and Technology), W. Liu, S. Hsieh, T. Tsai (National Formosa University) and Y. Hsu (Department of Materials Engineering, National Pintung University of Science and Technology)
o 854 Selective Electroless Ni-Based Capping Layer on Cu Gate Electrode of TFT-LCD S. Chang, W. Hsu, C. Wan and Y. Wang (National Tsing-Hua University)
o 855 Electrochemical-Mechanical Polishing (ECMP) Mechanisms of Copper D. Ng and H. Liang (Texas A&M University)
o 856 Direct Electrochemical Nanopatterning With Solid Ionic Conductors K. Hsu, N. Fang, P. Ferreira and P. Schultz (University of illinois at urbana-Champaign)
o 857 Growth of NiSi Nanowires by Electroless Nickel Plating on Silicon Nanowires W. Chen (National Pingtung University of Science and Technology), W. Liu, T. Tsai, S. Hsieh (National Formosa University) and C. Liu (National Chiao Tung University)
o 858 Nickel Mouldable Electrodes: Mott-Schottky Analysis Of Ni(OH)2 Deposited Layers On Nickel Powder-Epoxy Resin Composite Electrodes F. Vicente, J. Bastos, B. Mirta, J. Gregori and J. García-Jareño (University of Valencia)
 

Wednesday, May 9, 2007

PDR 2, 3rd Floor

Co-Chairs: K. Semkow and J. Dukovic
TimeAbs#Title and Authors
08:10 859 Challenges and Opportunities for Electrochemical Processing in Microelectronics T. Ritzdorf (Semitool, Inc.)
08:50 860 Superfilling High AR and Nanometer Dimension Features by Electrodeposition of Rhodium I. Shao (IBM)
09:10 861 Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers S. Kumar, D. Greenslit and E. Eisenbraun (University at Albany-SUNY)
09:30 Intermission (30 Minutes)
10:00 862 Transient Overgrowth of a Resistive Barrier Layer by Electrodeposited Metal in the Presence of Additives M. Willis, Y. Qin (University of Illinois at Urbana-Champaign) and R. Alkire (University of Illinois)
10:20 863 Electroless Copper Deposition on Ruthenium for Damascene Interconnects Q. Chen and X. Lin (Cookson Electronics/Enthone)
10:40 864 Etching Rate Enhancement of Copper by Adding Sulfur Compounds in Chemical-Mechanical Polishing Slurries T. Kanki (Fujitsu Lab. Ltd.), T. Shirasu (Fujitsu Ltd.), T. Kimura, T. Nakamura (Fujitsu Lab. Ltd.) and M. Miyajima (Fujitsu Ltd.)
11:00 865 Etching of Ti/W Alloy for Definition of Under Bump Metallurgy (UBM) on Semiconductor Wafers K. W. Semkow, C. Bailey, D. Rath, R. Werner, H. Liu and B. Sundlof (IBM)
11:20 866 XPS-study of Cu/epoxy Interfaces after different Wet Chemical Treatments A. A. Vervaet (UGent), S. Siau (Ocas) and B. De Roo (Elis/UGent)
11:40 867 Controlling Whisker Formation in Tin-Based Solders Using Electrically Mediated Electrodeposition H. Garich, H. McCrabb, M. Inman and E. Taylor (Faraday Technology, Inc.)
12:00 868 Mechanism of Selective Etching of SiGe Layers in SiGe/Si Systems J. Kato, H. Oka, K. Kanemoto, H. Hisamatsu, Y. Matsuzawa, Y. Kitano, T. Hara, M. Hoshina (Seiko Epson Corporation, Fujimi Plant) and S. Ohmi (Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology, J2-72,4259 Nagatsuta, Midori-ku, Yokohama-shi, Kanagawa-ken, 226-8502, Japan)
 
Co-Chairs: M. Lay and J. Dickerson
TimeAbs#Title and Authors
14:00 869 Epitaxial Electrodeposition of ZnO onto Au from Highly Alkaline Solution J. A. Switzer (University of Missouri-Rolla), S. Limmer (Argonne) and E. Kulp (University of Missouri-Rolla)
14:40 870 Electrodeposited CoNiFe/Cu and Bi2Te3 Nanotubes D. Davis, D. Pinisetty, M. Moldovan (Louisiana State University), A. Prabhakar (IBM), D. Young, R. Devireddy, M. Murphy and E. Podlaha (Louisiana State University)
15:00 871 Electrodeposition of Ni under a Magnetic Field M. Motoyama, Y. Fukunaka (Kyoto University) and S. Kikuchi (The University of Shiga Prefecture)
15:20 872 Photocatalytic Initiation of Electroless Deposition S. Galea, C. Boxall (University of Central Lancashire), P. Goodall and S. Woodbury (Nexia Solutions Ltd)
15:40 873 Electrodeposition of Amorphous CoNiMo Magnetic Nanowires M. C. Esteves, P. Sumodjo (Universidade de Sao Paulo) and E. Podlaha (Louisiana State University)
16:00 874 Monitoring of Electroless Solutions for Deposition of Magnetic Alloys S. Aleynik, J. Tyutina, M. Pavlov, E. Shalyt and P. Bratin (ECI Technology)
16:20 875 Electrophoretic Deposition of Polymer-Nanocrystal Heterostructures J. Dickerson, S. Hasan, S. Somarajan, C. Adkins, L. Swafford, E. Harth and S. Rosenthal (Vanderbilt University)
16:40 876 Nickel Displacement Plating into Porous Silicon with Aspect Ratio 200 C. Xu (Duquesne University), X. Zhang (University of California at Los Angeles), K. Tu (Universioty of California, USA) and Y. Xie (University of California at Los Angeles)
17:00 877 Porous Gold Structures Built on Silicon Substrates J. A. Brito Neto (Tokyo University of Science - Faculty of Science and Technology), K. Kondo and M. Hayase (Tokyo University of Science)
17:20 878 Electrochemical ALD Formation of Elemental Nanofilms J. Stickney, J. Kim, Y. Kim, D. Vairavapandian and C. Thambidurai (The University of Georgia)
17:40 879 Electronic Applications of 2-Dimensional Networks of Carbon Nanotubes M. D. Lay and P. Vichchulada (University of Georgia)