212th ECS Meeting - Washington, DC

October 7 - October 12, 2007

PROGRAM INFORMATION
 

E1 - Atomic Layer Deposition Applications 3

Dielectric Science and Technology
 

Monday, October 8, 2007

Adams Room, Terrace Level

Emerging ALD Applications

Co-Chair(s): A. Londergan and J. Elam
TimeAbs#Title and Authors
10:30 Introductory Remarks (10 Minutes)
10:40   973   Implementing ALD Layers in MEMS Processing R. L. Puurunen, J. Saarilahti and H. Kattelus (VTT Technical Research Centre of Finland)
11:10   974   Application of Atomic Layer Deposition for Gas Permeation Barrier Thin Films P. F. Carcia, R. McLean (DuPont Co.), M. Groner, A. Dameron and S. George (University Colorado)
11:40   975   ALD Capping Layers for Accelerator Superconducting Radio Frequency Cavities M. J. Pellin, J. Elam (Argonne National Laboratory) and J. Moore (Mass Think)
 

ALD Equipment and Process Integration

Co-Chair(s): O. van der Straten and S. B. Kang
TimeAbs#Title and Authors
14:00   976   Large Scaled ALD/PECVD Reactor for Flat Panel Display Application K. Murata, K. Washio, N. Miyatake, Y. Mori, H. Tachibana (Mitsui Engineering & Shipbuilding Co., Ltd.), Y. Uraoka and T. Fuyuki (Nara Institute of Science and Technology)
14:30   977   Savannah ALD Systems: Enabling Quick Results D. J. Monsma, J. Becker and R. Shao (cambridge nanotech)
15:00   978   Deposition of TiN and TaN by Remote Plasma ALD for Diffusion Barrier Applications H. Knoops, L. Baggetto, E. Langereis, M. Van de Sanden (Eindhoven University of Technology), J. Klootwijk (Philips Research), F. Roozeboom (NXP Semiconductors Research), R. Niessen (Philips Research), P. Notten and W. Kessels (Eindhoven University of Technology)
15:20   979   A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment T. Ando, Y. Ohta, H. Ashihara and T. Imai (Hitachi, Ltd.)
15:40   980   Oxidant Effect on Resistance Switching Characteristics of HfO2 Film Grown Atomic Layer Deposition J. Lee, I. Park, K. Jung, S. Lee, J. Park and J. Ahn (Hanyang University)
16:00   981   Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers L. Wu (University at Albany, SUNY) and E. Eisenbraun (The University at Albany-State University of New York)
 

3D Structures via ALD Coated Templates

Co-Chair(s): S. Bent and M. Pellin
TimeAbs#Title and Authors
16:40   982   Ferromagnetic Nanostructures by Atomic Layer Deposition: From Thin Films Towards Core-Shell Nanotubes K. Nielsch (University of Hamburg), J. Bachmann, M. Daub, J. Jing, M. Knez, U. Gösele (Max-Planck-Institute for Microstructure Physics, Halle (Germany)), S. Barth, S. Mathur (Leibniz-Institut für Neue Materialien, CVD Division, Saarbruecken (Germany)), J. Escrig and D. Altbir (Departamento de Fısica, Universidad de Santiago (Chile))
17:10   983   Fabrication of Nanoscale Tubular Structures and Capsules of Oxides by ALD C. Bae, H. Shin (Kookmin University) and J. Kim (University of Texas, Dallas)
17:40   984   Developments in the Understanding of ALD Processes and Applications of ALD in Critical Technologies M. Pemble, I. Povey and F. Chalvet (Tyndall National Institute)
18:10   985   Modification of Photonic Crystal Band Structures by Atomic Layer Deposition Tuning J. Blair (Georgia Institute of Technology), D. Gaillot (University of Lille), E. Graugnard (University of Rhode Island) and C. Summers (Georgia Institute of Technology)
 

Tuesday, October 9, 2007

Adams Room, Terrace Level

ALD Process Development and Characterization

Co-Chair(s): S. F. Bent and R. Puurunen
TimeAbs#Title and Authors
10:00   986   Molecular Layer Deposition of Organic and Hybrid Organic-Inorganic Films S. George, A. Dameron and S. Davidson (University Colorado)
10:30   987   In-Situ FTIR Study of Copper Deposition by Atomic Layer Deposition M. Dai, J. Kwon (Rutgers University), E. Langereis (Eindhoven University of Technology), L. Weilunski, Y. Chabal (Rutgers University), Z. Li and R. Gordon (Harvard University)
10:50   988   Formation of Cu and Ru Nanofilms by Electrochemical ALD C. Thambidurai, N. Jayaraju and J. L. Stickney (University of Georgia)
11:10   989   An Ab Initio Evaluation of Cyclopentadienyl Precursors for the Atomic Layer Deposition of Hafnia and Zirconia A. Zydor and S. Elliott (Tyndall National Institute)
11:30   990   Nanomechanical Properties of High-K Dielectrics Grown by Atomic Layer Deposition K. Tapily (Old Dominion University), J. Jakes, D. Stone (University of Wisconsin-Madison), P. Shrestha, D. Gu, H. Baumgart (Old Dominion University) and A. Elmustafa (Old Dominion Unviversity- Applied Research Center)
11:50   991   Evaluation of Novel Sr Precursors for Atomic Layer Deposition of SrO Thin Film K. Kim (Samsung Electronics Co., Ltd.)
 

ALD Coatings on Porous Materials

Co-Chair(s): O. van der Straten and S. George
TimeAbs#Title and Authors
14:00   992   Ultra- Thin Conformal Pore-Sealing of Low-K Materials by Plasma-Assisted ALD J. L. Cecchi (Univ. of New Mexico), C. Brinker (Sandia National Labs, MS 1349) and Y. Jiang (Sandia National Labs)
14:30   993   Surface Engineering of Nanoporous Materials via Atomic Layer Deposition J. Biener, S. Kucheyev, T. Baumann, Y. Wang and A. Hamza (Lawrence Livermore National Laboratory)
15:00   994   Spatially Controlled Atomic Layer Deposition in Porous Supports J. Elam, J. A. Libera and M. J. Pellin (Argonne National Laboratory)
 

ALD for Gate Stack Applications

Co-Chair(s): S. De Gendt and S. B. Kang
TimeAbs#Title and Authors
15:40   995   Atomic Layer Deposition for CMOS Scaling: High-k Gate Dielectrics on Si, Ge, and III-V Semiconductors M. Frank (IBM T. J. Watson Research Center)
16:10   996   Characteristics of HfO2 and ZrO2 Mixed Oxide Film Grown by Atomic Layer Deposition S. Lee, S. Bang, S. Jeon, S. Kwon, W. Jung, I. Kim and H. Jeon (Hanyang University)
16:30   997   ALD La-Based Oxides for Vt-Tuning in High-K/Metal Gate Stacks J. Swerts, Y. Fedorenko, J. Maes (ASM Belgium), E. Tois (ASM Microchemistry), A. Delabie, L. Ragnarsson, H. Yu, L. Nyns, C. Adelmann and S. Van Elshocht (IMEC)
16:50   998   Effect of Nitridation for High-K Layers by ALCVDTM in Order to Decrease the Trapping in Non Volatile Memories H. Grampeix (CEA LETI, MINATEC), J. Colonna (CEA - LETI / MINATEC), G. Molas (CEA-Leti), M. Bocquet, F. Martin, N. Rochat, E. Martinez, C. Licitra, T. Veyron, A. Papon, M. Gely and K. Yckache (CEA LETI / MINATEC)
17:10   999   Atomic Layer Deposition of Hafnium Based Gate Dielectric Layers for CMOS Applications A. Delabie, L. Nyns, F. Bellenger, M. Caymax, T. Conard, A. Franquet, M. Houssa (IMEC), M. Meuris (IMEC, Kapeldreef 75, B-3001 Leuven, Belgium), L. Ragnarsson, S. Sioncke, S. Van Elshocht, S. De Gendt (IMEC), J. Swerts, Y. Fedorenko and J. Maes (ASM Belgium)
17:40 Concluding Remarks (10 Minutes)
 

Exhibit Hall, Concourse Level

Poster Session

Co-Chair(s): J. Elam and A. Londergan
TimeAbs#Title and Authors
o   1000   Stress Reduction of Ge2Sb2Te5 Crystallization by Capping Al2O3 Film Grown by PEALD Y. Park, J. Lim, W. Yang, S. Lee, S. Yoon and B. Yu (ETRI)
o   1001   The Enhanced Nucleation Behavior of Atomic-Layer-Deposited Ru Film on Low-K Dielectrics by UV-O3 Treatment J. Heo, S. Lee, B. Kim, D. Eom, C. Hwang and H. Kim (Seoul National University)
o   1002   Ge Atomic Layer Deposition on Au X. Liang, N. Jayaraju and J. L. Stickney (University of Georgia)
o   1003   Tuning the Absolute Band Gap of Silicon Photonic Crystals by Atomic Layer Deposition (ALD) Interfacial Layers M. Thitsa, S. Albin, D. Gu and H. Baumgart (Old Dominion University)
o   1004   Low Temperature Deposition of Ge Thin Films for Phase Change Memory T. Chen, C. Xu and W. Hunks (Advanced Technology Materials, Inc.)
o   1005   Optimization of Process Conditions of Atomic Layer Deposited ZrO2 Thin Film for DRAM Capacitor Application Y. Kim, S. Chung, J. Seo, B. Kim, J. Park, M. Kang, H. Lim, S. Nam and T. Ahn (Samsung Electronics Co., LTD.)
o   1006   Electrodeposition of PbS Multilayers on AG(111) by ECALE (Electrochemical Atomic Layer Epitaxy) V. C. Fernandes (Universidade Federal de Sáo Carlos), E. Salvietti, F. Loglio, M. Innocenti (University of Florence), L. Mascaro (Universidade Federal de São Carlos) and M. Foresti (University of Florence)
o   1007   Growth of CdTe Films by ML-ALD V. E. Drozd, A. Yafyasov, V. Bogevolnov and I. Nikiforova (St.-Petersburg state university)